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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

High-resolution pulse-counting array detectors for imaging and spectroscopy at ultraviolet wavelengths

The performance characteristics of multianode microchannel array (MAMA) detector systems which have formats as large as 256 x 1024 pixels and which have application to imaging and spectroscopy at UV wavelengths are evaluated. Sealed and open-structure MAMA detector tubes with opaque CsI photocathodes can determine the arrival time of the detected photon to an accuracy of 100 ns or better. Very large format MAMA detectors with CsI and Cs2Te photocathodes and active areas of 52 x 52 mm (2048 x 2048 pixels) will be used as the UV solar blind detectors for the NASA STIS.

Timothy, J. Gethyn↗
NASA NTRS1989

Detector For FM Voice Or Digital Signals

Frequency-modulation (FM) detector operates with either analog audio (usually voice) signals or digital signals sent by differential minimum-shift keying (DMSK). Performance expected similar to conventional limiter/discriminator FM detectors. Detector operates at baseband, obviating need for band-pass filtering at intermediate frequency. Baseband version made in very-large-scale integrated circuit. New detector useful in mobile communications, where trend is toward integrated voice and data service.

Davarian, Faramaz↗
NASA NTRS1988

An introduction to blocked impurity band detectors

Blocked impurity band detectors fabricated using standard silicon technologies offer the possibility of combining high sensitivity and high accuracy in a single detector operating in a low background environment. The solid state photomultiplier described by Petroff et al., which is a new type of blocked impurity band detector, offers even higher sensitivity as well as operation in the visible spectral region. The principle of operation and possible application of blocked impurity band detectors for stellar seismology and the search for extra-solar planets are described.

Geist, Jon↗
NASA NTRS1989

Microwave characteristics of GaAs MMIC integratable optical detectors

Interdigitated photoconductive detectors were fabricated on microwave device structures, making them easily integratable with Monolithic Microwave Integrated Circuits (MMIC). Detector responsivity as high as 2.5 A/W and an external quantum efficiency of 3.81 were measured. Response speed was nearly independent of electrode geometry, and all detectors had usable response at frequencies to 6 GHz. A small signal model of the detectors based on microwave measurements was also developed.

Claspy, Paul C.↗
NASA NTRS1987

Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region

A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.

Source record↗
NASA NTRS1988

Development of the RAIDS extreme ultraviolet wedge and strip detector

In the next few years the Remote Atmospheric and Ionospheric Detector System (RAIDS) package will be flown on a Tiros spacecraft. The EUV spectrometer experiment contains a position-sensitive detector based on wedge and strip anode technology. A detector design has been implemented in brazed alumina and kovar to provide a rugged bakeable housing and anode. A stack of three 80:1 microchannel plates is operated at 3500-4100 V. to achieve a gain of about 10 to the 7th. The top MCP is to be coated with MgF for increased quantum efficiency in the range of 50-115 nm. A summary of fabrication techniques and detector performance characteristics is presented.

Kayser, D. C.↗
NASA NTRS1989

A position sensitive detector for EUV remote sensing

The authors describe a photon-counting extreme ultraviolet (EUV) detector system used in a rocket-borne spectroscopic instrument for remote sensing of upper atmospheric composition and temperature. The detector uses a KBr coated microchannel plate (MCP) Z stack in combination with a wedge-and-strip image readout system. Three separate detector fields of view are used to sense the Earth dayglow spectrum (980 A to 1040 A, and 1300 A to 1360 A) and the solar EUV spectrum (250 A to 1400 A). The authors demonstrate high gain (2 x 107), tight pulse-height distribution (35 percent FWHM), and a spatial resolution of about 35 microns FWHM (full width at half maximum), which is the highest resolution for a wedge-and-strip anode MCP detector flown to date. The background, image linearity, and flat-field performance are discussed. Raw spectra from the rocket flight are also presented.

Siegmund, O. H. W.↗
NASA NTRS1989

Centroid position measurements and subpixel sensitivity variations with the MAMA detector

Initial measurements of the position sensitivity of a visible-light multianode microchannel array detector show that centroid calculations for image spots are accurate to better than 0.04 pixels even with sources that are essentially delta functions at the photocathode.Subpixel sensitivity variations of 10-15 percent are typically found for pixels in the array. Variations as large as 30 percent are possible in the worst conditions. These variations limit the photometric accuracy of the detector when very small scale features are observed. The photometric accuracy and the position sensitivity of the detector appear to be limited by cross-coupling effects within the anode array. Initial measurements with more recent designs of the detector show that most or all of this cross-coupling has been eliminated.

Morgan, Jeffrey S.↗
NASA NTRS1989

Earth-orbiting resonant-mass gravitational wave detectors

Earth-based gravitational wave detectors suffer from the need to support the large antenna masses against the earth's gravity without transmitting a significant amount of seismic noise. Passive vibration isolation is difficult to achieve below 1 Hz on the earth. Vibration-free space environment thus gives an opportunity to extend the frequency window of gravitational wave detection to ultralow frequencies. The weightless condition of a space laboratory also enables construction of a highly symmetric multimode antenna which is capable of resolving the direction of the source and the polarization of the incoming wave without resorting to multiantenna coincidence. Two types of earth-orbiting resonant-mass gravitational wave detectors are considered. One is a skyhook gravitational wave detector, proposed by Braginsky and Thorne (1985). The other is a spherical detector, proposed by Forward (1971) and analyzed by Wagoner and Paik (1976).

Paik, Ho Jung↗
NASA NTRS1990

Development of a unique laboratory standard indium gallium arsenide detector for the 500 to 1700 micron spectral region, phase 2

In the course of this work, 5 mm diameter InGaAs pin detectors were produced which met or exceeded all of the goals of the program. The best results achieved were: shunt resistance of over 300 K ohms; rise time of less than 300 ns; contact resistance of less than 20 ohms; quantum efficiency of over 50 percent in the 0.5 to 1.7 micron range; and devices were maintained and operated at 125 C without deterioration for over 100 hours. In order to achieve the goals of this program, several major technological advances were realized, among them: successful design, construction and operation of a hydride VPE reactor capable of growing epitaxial layers on 2 inch diameter InP substrates with a capacity of over 8 wafers per day; wafer processing was upgraded to handle 2 inch wafers; a double layer Si3N4/SiO2 antireflection coating which enhances response over the 0.5 to 1.7 micron range was developed; a method for anisotropic, precisely controlled CH4/H2 plasma etching for enhancement of response at short wavelengths was developed; and electronic and optical testing methods were developed to allow full characterization of detectors with size and spectral response characteristics. On the basis of the work and results achieved in this program, it is concluded that large size, high shunt resistance, high quantum efficiency InGaAs pin detectors are not only feasible but also manufacturable on industrial scale. This device spans a significant portion of visible and near infrared spectral range and it will allow a single detector to be used for the 0.5 to 1.7 micron spectral region, rather than the presently used silicon (for 0.5 to 1.1 microns) and germanium (0.8 to 1.7 microns).

Ban, Vladimir S.↗
NASA NTRS1990

Improved low frequency stability of bolometric detectors

An ac bridge readout system has been developed that greatly improves the low-frequency stability of bolometric detectors. The readout can be implemented with a simple circuit appropriate for use in space applications. A matched pair of detectors was used in the readout to achieve system noise within a factor of two of the fundamental noise limit of the detectors at frequencies as low as 10 mHz. The low-frequency stability of the readout system allows slower, more sensitive detectors to be used in many applications, and it facilitates observing strategies that are well suited to spaceborne observations.

Wilbanks, T.↗
NASA NTRS1989

Pulse shape discrimination for background rejection in germanium gamma-ray detectors

A pulse-shape discrimination (PSD) technique is developed to reject the beta-decay background resulting from activation of Ge gamma-ray detectors by cosmic-ray secondaries. These beta decays are a major source of background at 0.2-2 MeV energies in well shielded Ge detector systems. The technique exploits the difference between the detected current pulse shapes of single- and multiple-site energy depositions within the detector: beta decays are primarily single-site events, while photons at these energies typically Compton scatter before being photoelectrically absorbed to produce multiple-site events. Depending upon the amount of background due to sources other than beta decay, PSD can more than double the detector sensitivity.

Feffer, P. T.↗
NASA NTRS1990

LWIR detector requirements for low-background space applications

Detection of cold bodies (200 to 300 K) against space backgrounds has many important applications, both military and non-military. The detector performance and design characteristics required to support low-background applications are discussed, with particular emphasis on those characteristics required for space surveillance. The status of existing detector technologies under active development for these applications is also discussed. In order to play a role in future systems, new, potentially competing detector technologies such as multiple quantum well detectors must not only meet system-derived requirements, but also offer distinct performance or other advantages over these incumbent technologies.

Deluccia, Frank J.↗
NASA NTRS1990

Radiation response issues for infrared detectors

Researchers describe the most important radiation response issues for infrared detectors. In general, the two key degradation mechanisms in infrared detectors are the noise produced by exposure to a flux of ionizing particles (e.g.; trapped electronics and protons, debris gammas and electrons, radioactive decay of neutron-activated materials) and permanent damage produced by exposure to total dose. Total-dose-induced damage is most often the result of charge trapping in insulators or at interfaces. Exposure to short pulses of ionization (e.g.; prompt x rays or gammas, delayed gammas) will cause detector upset. However, this upset is not important to a sensor unless the recovery time is too long. A few detector technologies are vulnerable to neutron-induced displacement damage, but fortunately most are not. Researchers compare the responses of the new technologies with those of the mainstream technologies of PV HgCdTe and IBC Si:As. One important reason for this comparison is to note where some of the newer technologies have the potential to provide significantly improved radiation hardness compared with that of the mainstream technologies, and thus to provide greater motivation for the pursuit of these technologies.

Kalma, Arne H.↗
NASA NTRS1990

Low dark current photovoltaic multiquantum well long wavelength infrared detectors

The authors have, for the first time, demonstrated photovoltaic detection for an multiple quantum well (MQW) detector. With a blocking layer, the MQW detector exhibits Schottky I-V characteristics with extremely low dark current and excellent ideality factor. The dark current is 5 times 10(exp -14) A for an 100x100 square micron 10 micron detector at 40 K, 8 to 9 orders of magnitude lower than that of a similar 10 micron MQW detector without blocking layer. The ideality factor is about 1.01 to 1.05 at T = 40 to 80 K. The measured barrier height is consistent with the energy difference between first excited states and ground states, or the peak of spectral response. The authors also, for the first time, report the measured effective Richardson constant (A asterisk asterisk) for the GaAs/AlGaAs heterojunction using this blocking layer structure. The A asterisk asterisk is low approx. 2.3 A/sq cm/K(exp 2).

Wu, C. S.↗
NASA NTRS1990

HgZnTe-based detectors for LWIR NASA applications

The initial goal was to grow and characterize HgZnTe and determine if it indeed had the advantageous properties that were predicted. Researchers grew both bulk and liquid phase epitaxial HgZnTe. It was determined that HgZnTe had the following properties: (1) microhardness at least 50 percent greater than HgCdTe of equivalent bandgap; (2) Hg annealing rates of at least 2 to 4 times longer than HgCdTe; and (3) higher Hg vacancy formation energies. This early work did not focus on one specific composition (x-value) of HgZnTe since NASA was interested in HgZnTe's potential for a variety of applications. Since the beginning of 1989, researchers have been concentrating, however, on the liquid phase growth of very long wavelength infrared (VLWIR) HgZnTe (cutoff approx. equals 17 microns at 65K) to address the requirements of the Earth Observing System (EOS). Since there are no device models to predict the advantages in reliability one can gain with increased microhardness, surface stability, etc., one must fabricate HgZnTe detectors and assess their relative bake stability (accelerated life test behavior) compared with HgCdTe devices fabricated in the same manner. Researchers chose to fabricate HIT detectors as a development vehicle for this program because high performance in the VLWIR has been demonstrated with HgCdTe HIT detectors and the HgCdTe HIT process should be applicable to HgZnTe. HIT detectors have a significant advantage for satellite applications since these devices dissipate much less power than conventional photoconductors to achieve the same responsivity.

Patten, Elizabeth A.↗
NASA NTRS1990

LWIR detector research in InAsSb/InAs

The InAsSb/InSb strained-layer system forms a type-II superlattice in the Sb-rich region of the phase diagram. The band gap of InAsSb/InSb strained-layer superlattices grown on lattice-matched buffers can be varied continuously to produce semiconducting systems with band gaps ranging from that of InSb (0.23 eV with an absorption edge at 5.5 microns at 77 K) to 0. The semiconductor to semimetal transition occurs at As concentrations of approximately 33 percent, with the precise value dependent upon the strain and quantum well dimensions. At higher As content, the system is a semimetal. The authors fabricated photovoltaic detectors with high D asterisk at 77 K at wavelengths beyond 10 microns, and both photovoltaic and photoconductive detectors have been demonstrated with response to 15 microns. The photoconductive detectors exhibit gain of up to 100. Details of the materials growth, studies of the band structure and properties, device processing and the detector performance observed to date in these systems are discussed.

Peercy, Paul S.↗
NASA NTRS1990

Advances in the development of encapsulants for mercuric iodide X-ray detectors

Advances in the development of protective impermeable encapsulants with high transparency to ultra-low-energy X-rays for use on HgI2 X-ray detectors are reported. Various X-ray fluorescence spectra from coated detectors are presented. The X-ray absorption in the encapsulants has been analyzed using characteristic radiation from various elements. Results suggest that low-energy cutoffs for the detectors are not determined solely by the encapsulating coatings presently employed but are also influenced by the front electrode and surface effects, which can affect the local electric field or the surface recombination velocity. An energy resolution of 182 eV (FWHM) has been achieved for Ni L lines at 850 eV. Improved detector sensitivity to X-ray energies under 700 eV is demonstrated.

Iwanczyk, J. S.↗