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At least 523 records · Page 29

A Global Atmospheric Model of Meteoric Iron

The first global model of meteoric iron in the atmosphere (WACCM-Fe) has been developed by combining three components: the Whole Atmosphere Community Climate Model (WACCM), a description of the neutral and ion-molecule chemistry of iron in the mesosphere and lower thermosphere (MLT), and a treatment of the injection of meteoric constituents into the atmosphere. The iron chemistry treats seven neutral and four ionized iron containing species with 30 neutral and ion-molecule reactions. The meteoric input function (MIF), which describes the injection of Fe as a function of height, latitude, and day, is precalculated from an astronomical model coupled to a chemical meteoric ablation model (CABMOD). This newly developed WACCM-Fe model has been evaluated against a number of available ground-based lidar observations and performs well in simulating the mesospheric atomic Fe layer. The model reproduces the strong positive correlation of temperature and Fe density around the Fe layer peak and the large anticorrelation around 100 km. The diurnal tide has a significant effect in the middle of the layer, and the model also captures well the observed seasonal variations. However, the model overestimates the peak Fe+ concentration compared with the limited rocket-borne mass spectrometer data available, although good agreement on the ion layer underside can be obtained by adjusting the rate coefficients for dissociative recombination of Fe-molecular ions with electrons. Sensitivity experiments with the same chemistry in a 1-D model are used to highlight significant remaining uncertainties in reaction rate coefficients, and to explore the dependence of the total Fe abundance on the MIF and rate of vertical transport.

meteoric inputfunction↗

Measurement of electrical parameters and current components in the bulk of silicon solar cells

A review and illustration of electrical measurements for determination of the bulk parameters in silicon solar cells is given. The presentation concentrates on transient and small signal admittance measurements. These measurements yield accurate and reliable values of the base lifetime and the surface recombination velocity at the back contract without inaccuracies that normally results from electrons and holes in the p/n junction space charge region. This then allows the determination of the recombination current in each region of the cell. As an example, current components in the emitter, low doped base, high doped base and junction space charge region of the back surface field cell are obtained. Such analysis is essential in determining the relative importance of the base and the emitter and, thus, the region that limits the cell efficiency.

Neugroschel, A.↗

Electron‐Deficient and Quinoid Central Unit Engineering for Unfused Ring‐Based A 1 –D–A 2 –D–A 1 ‐Type Acceptor Enables High Performance Nonfullerene Polymer Solar Cells with High V oc and PCE Simultaneously

Abstract Here, a pair of A 1 –D–A 2 –D–A 1 unfused ring core‐based nonfullerene small molecule acceptors (NF‐SMAs), BO2FIDT‐4Cl and BT2FIDT‐4Cl is synthesized, which possess the same terminals (A 1 ) and indacenodithiophene unit (D), coupling with different fluorinated electron‐deficient central unit (difluorobenzoxadiazole or difluorobenzothiadiazole) (A 2 ). BT2FIDT‐4Cl exhibits a slightly smaller optical bandgap of 1.56 eV, upshifted highest occupied molecular orbital energy levels, much higher electron mobility, and slightly enhanced molecular packing order in neat thin films than that of BO2FIDT‐4Cl . The polymer solar cells (PSCs) based on BT2FIDT‐4Cl:PM7 yield the best power conversion efficiency (PCE) of 12.5% with a V oc of 0.97 V, which is higher than that of BO2FIDT‐4Cl ‐based devices (PCE of 10.4%). The results demonstrate that the subtle modification of A 2 unit would result in lower trap‐assisted recombination, more favorable morphology features, and more balanced electron and hole mobility in the PM7:BT2FIDT‐4Cl blend films. It is worth mentioning that the PCE of 12.5% is the highest value in nonfused ring NF‐SMA‐based binary PSCs with high V oc over 0.90 V. These results suggest that appropriate modulation of the quinoid electron‐deficient central unit is an effective approach to construct highly efficient unfused ring NF‐SMAs to boost PCE and V oc simultaneously.

Zhang, Chao↗

The electron Boltzmann equation in a plasma generated by fission fragments

A Boltzmann equation formulation is presented for the determination of the electron distribution function in a plasma generated by fission fragments. The formulation takes into consideration ambipolar diffusion, elastic and inelastic collisions, recombination and ionization, and allows for the fact that the primary electrons are not monoenergetic. Calculations for He in a tube coated with fissionable material show that, over a wide pressure and neutron flux range, the distribution function is non-Maxwellian, but the electrons are essentially thermal. Moreover, about a third of the energy of the primary electrons is transferred into the inelastic levels of He. This fraction of energy transfer is almost independent of pressure and neutron flux but increases sharply in the presence of a sustainer electric field.

Hassan, H. A.↗

Electron distribution function in a plasma generated by fission fragments

A Boltzmann equation formulation is presented for the determination of the electron distribution function in a plasma generated by fission fragments. The formulation takes into consideration ambipolar diffusion, elastic and inelastic collisions, recombination and ionization, and allows for the fact that the primary electrons are not monoenergetic. Calculations for He in a tube coated with fissionable material shows that, over a wide pressure and neutron flux range, the distribution function is non-Maxwellian, but the electrons are essentially thermal. Moreover, about a third of the energy of the primary electrons is transferred into the inelastic levels of He. This fraction of energy transfer is almost independent of pressure and neutron flux.

Hassan, H. A.↗

Surface recombination velocity measurement for silicon solar cells

For the design and fabrication of silicon solar cells approaching theoretical ultimate conversion efficiencies, surface recombination velocity plays a crucial role. A technique using a scanning electron microscope with pulsed electron beam has been developed for thy measurement of this important parameter for silicon surfaces. It is shown that the surface recombination velocity(s) increases by an order of magnitude when a freshly etched sample is left out for a few hours, presumably due to generation of surface states. A textured front surface field (FSF) cell with a high-low junction near the surface shows the effect of minority carrier reflection and an apparent reduction of s, whereas a tandem junction (TJ) cell with n+-p junction near the surface gives larger s value.

Daud, T.↗

Inkjet-printed SnO x as an effective electron transport layer for planar perovskite solar cells and the effect of Cu doping

Inkjet printing is a more sustainable and scalable fabrication method than spin coating for producing perovskite solar cells (PSCs). Although spin-coated SnO 2 has been intensively studied as an effective electron transport layer (ETL) for PSCs, inkjet-printed SnO 2 ETLs have not been widely reported. Here, we fabricated inkjet-printed, solution-processed SnO x ETLs for planar PSCs. A champion efficiency of 17.55% was achieved for the cell using a low-temperature processed SnO x ETL. The low-temperature SnO x exhibited an amorphous structure and outperformed high-temperature crystalline SnO 2 . The improved performance was attributed to enhanced charge extraction and transport and suppressed charge recombination at ETL/perovskite interfaces, which originated from enhanced electrical and optical properties of SnO x , improved perovskite film quality, and well-matched energy level alignment between the SnO x ETL and the perovskite layer. Furthermore, SnO x was doped with Cu. Cu doping increased surface oxygen defects and upshifted energy levels of SnO x , leading to reduced device performance. A tunable hysteresis was observed for PSCs with Cu-doped SnO x ETLs, decreasing at first and turning into inverted hysteresis afterwards with increasing Cu doping level. This tunable hysteresis was related to the interplay between charge/ion accumulation and recombination at ETL/perovskite interfaces in the case of electron extraction barriers.

14 SOLAR ENERGY↗

Anti-Arrhenius behavior of electron transfer reactions in molecular dimers

Rates of chemical reactions typically accelerate as the temperature rises, following the Arrhenius law. However, electron transfer reactions may exhibit weak temperature dependence or counterintuitive behavior, known as anti-Arrhenius behavior, wherein reaction rates decrease as temperature increases. Solvent reorganization energy and torsion-induced changes in electronic couplings could contribute to this unusual behavior, but how each contributes to the overall temperature dependence is unclear. One can decelerate the charge recombination process in photogenerated radical pairs or charge-separated states by harnessing this often-overlooked phenomenon. This means that we could achieve long-lived radical pairs without relying on conventional cooling. Using a series of homo molecular dimers, we showed that the degree of torsional hindrance dictates temperature-dependent torsion-induced changes in electronic coupling and, therefore, charge recombination rates. The overall temperature dependence is controlled by how changes in electronic coupling and the temperature-dependent solvent reorganization energy contribute to the rates of charge recombination. Our findings pave the way for rationally designing molecules that exhibit anti-Arrhenius behavior to slow down charge recombination, opening possibilities for applications in energy-related and quantum information technologies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Quantitative relationships between film morphology, charge carrier dynamics, and photovoltaic performance in bulk-heterojunction binary vs. ternary acceptor blends

Addressing pertinent and perplexing questions regarding why nonfullerene acceptors (NFAs) promote higher power conversion efficiencies (PCEs) than traditional fullerenes and how photoactive bulk heterojunction (BHJ) film morphology, charge photogeneration, and recombination dynamics dictate solar cell performance have stimulated many studies of polymer solar cells (PSCs), yet quantitative relationships remain limited. Better understanding in these areas offers the potential to advance materials design and device engineering, afford higher PCEs, and ultimate commercialization. Here we probe quantitative relationships between BHJ film morphology, charge carrier dynamics, and photovoltaic performance in model binary and ternary blend systems having a wide bandgap donor polymer, a fullerene, and a promising NFA. We show that optimal PC 71 BM incorporation in a PBDB-TF:ITIC-Th binary system matrix retains the original π-face-on orientation, ITIC-Th crystallinity and BHJ film crystallite dimensions, and reduces film upper surface ITIC-Th segregation. Such morphology changes together simultaneously increase hole (μ h ) and electron (μ e ) mobilities, facilitate light-activated ITIC-Th to PC 71 BM domain electron delocalization, reduce free charge carrier (FC) bimolecular recombination (BR) within PBDB-TF:ITIC-Th mixed regions, and increase FC extraction pathways viaPBDB-TF:PC 71 BM pairs. The interplay of these effects yields significantly enhanced inverted cell short-circuit current density (J SC ), fill factor (FF), and PCE. Unexpectedly, we also find that excessive PC 71 BM in the PBDB-TF:ITIC-Th binary system alters the PBDB-TF orientation to π-edge-on, increases large scale PC 71 BM-rich aggregations and BHJ upper surface PC 71 BM composition. Further, these morphology changes increase parasitic decay processes such as intersystem crossing from photoexcited PC 71 BM, compromising the J SC , FF, and PCE metrics. ITIC-Th X-ray diffraction reveals a unique sidechain-dominated molecular network with previously unknown sidechain-end group stacking, rationalizing the STEM and GIWAXS results, photophysics, and the high μ e . DFT computation reveals charge transfer networks within ITIC-Th crystallites, supporting excited-state electron delocalization from ITIC-Th to PC 71 BM. This structure–property understanding leads to a newly reported NFA blend with PCE near 17%.

14 SOLAR ENERGY↗

Singlet fission in core-linked terrylenediimide dimers

We have studied two regioisomeric terrylenediimide (TDI) dimers in which the 1-positions of two TDIs are linked via 1,3- or 1,4-phenylene spacers, mTDI 2 and pTDI, respectively. The nature and the dynamics of the multiexciton state are tuned by altering the through-bond electronic couplings in the ground and excited states and by changing the solvent environment. Our results show that controlling the electronic coupling between the two chromophores by an appropriate choice of linker can result in independent triplet state formation, even though the initial correlated triplet pair state is confined to a dimer. Moreover, even in polar solvents, if the electronic coupling is strong, the correlated triplet pair state is observed prior to symmetry-breaking charge separation. These results point out the close relationship between the singlet, correlated triplet pair, and charge transfer states in molecular dimers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Doping with phosphorus reduces anion vacancy disorder in CdSeTe semiconductors enabling higher solar cell efficiency

Doping is used in many pn junction devices, such as polycrystalline solar cells, to increase the strength of the junction field to assist charge carrier collection and thus partially mitigate nonradiative recombination losses. We demonstrate a different doping characteristic for inorganic solar cells: using dopants to reduce charge carrier trapping and electronic band tails. Alloying CdTe with Se to form CdSeTe semiconductor reduced recombination, but CdSeTe has more complex defect states which can limit further efficiency gains due to charge carrier trapping and trap-limited mobility. Doping CdSeTe with P (but not N, As, or Sb in this study) reduces band tails (Urbach energies) and lessens the impact of the near valence band trap states, with ambipolar mobilities improving to >50 cm 2 V −1 s −1 , fill factor increasing from 76% to 79%, and efficiencies increasing by 0.9% absolute. Simulations are used to show how such defect reduction improves performance in the radiative limit.

14 SOLAR ENERGY↗

One-dimensional simulation and validation of divertor detachment induced through nitrogen seeding on HL-2A

Divertor detachment is a promising method to solve the power exhaust problem in tokamak devices or even in future magnetic fusion reactors. In this work, a detachment experiment (HL-2A shot #38008) with mixed gas seeding (60% nitrogen and 40% deuterium) is simulated using the SD1D module in BOUT++. In the process from attachment to detachment, the target electron temperature and the target ion saturation current in simulations are found to be consistent with the experimental results measured by Langmuir probes on the target plate. In order to understand the underlying detachment mechanism on HL-2A, this work analyses the role of different particle species in the cases with different seeding rates. It shows that the plasma density varies little and the density of neutrals (D and D 2 ) slightly decreases with the increase of nitrogen seeding rate, such that plasma–neutral interactions cannot effectively reduce plasma energy and plasma momentum in the divertor. The case with a high seeding rate predicts that increasing seeding rate cannot reach a target temperature lower than 2.5 eV, which is the required temperature for strong plasma–molecule interactions. Thus, the plasma–molecule interactions may not be important in the divertor during nitrogen seeding. Here this work also studies the parallel forces including (1) force due to the parallel electric field, (2) friction forces, (3) ion- and electron-thermal forces, and (4) collisional reactions (e.g. charge exchange recombination and ionisation). It is found that the friction force between nitrogen ions and other particle species (primarily D + ) is the dominant force towards the target, while ion- and electron-thermal forces are the dominant force pushing nitrogen ions back to upstream. Parallel forces determine the parallel distribution of nitrogen impurities, and therefore decide the region of nitrogen radiation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

High-efficiency graded band-gap Al/x/Ga/1-x/As-GaAs solar cell

A detailed theoretical analysis of an n-on-p graded band-gap Al(x)Ga(1-x)As-GaAs solar cell yields a maximum air mass zero power conversion efficiency of 17% compared to 9% for a similar GaAs cell. The analysis includes surface and bulk minority carrier recombination, junction recombination current, spectrally varying surface reflection, and series resistance loss. The maximum efficiency is determined for a surface recombination velocity of 10,000 cm/sec and hole and electron diffusion lengths of 2.1 and 7.6 microns, respectively. The improved efficiency is primarily due to a built-in electric field, caused by the band-gap gradation, accelerating photogenerated holes toward the p-n junction. This field reduces the surface and bulk recombination of the holes, and thereby enhances their collection.

Hutchby, J. A.↗

The excitation and collisional deactivation of metastable N/2P/ atoms in auroras

The concentration and altitude distribution of metastable N(2P) atoms was measured in a diffuse IBC II(+) auroral arc. The dominant N(2P) source is shown to be the dissociative excitation of N2 by electron impact with a minor contribution from the dissociative recombination of N2(+) ions. The possibility that an ion-molecule process involving atomic oxygen and vibrationally excited N2(+) ions is a significant N(2P) source is examined. Values for the proportional yield of N(+), N(2P), N(2D), and N(4S) atoms from electron-impact dissociation of N2 under optically thick conditions are given.

Zipf, E. C.↗

Development of a Method for Local Electron Temperature and Density Measurements in the Divertor of the JET Tokamak

Plasma volume recombination in the divertor, a process in which charged particles recombine to neutral atoms, contributes to plasma detachment and hence cooling at the divertor target region. Detachment has been observed at JET and other tokamaks and is known to occur at low electron temperatures (T(sub e)<1 eV) and at high electron density (n(sub e)>10(exp 20)/m(exp 3)). The ability to measure such low temperatures is therefore of interest for modelling the divertor. In present work we report development of a new spectroscopic technique for investigation of local electron density (n(sub e)) and temperature (T,) in the outer divertor at JET.

Jupen, C.↗

Charge Transfer and Recombination Pathways through Fullerene Guests in Porphyrin-Based MOFs

Porphyrin-based metal–organic frameworks (MOFs) offer a unique platform for building porous donor–acceptor networks that exhibit long-lived charge separation and transport upon incorporation of electron acceptor guest species. Here, in this work, porphyrin-based MOFs, PCN-222(H 2 ) and PCN-222(Zn), synthesized as nanoparticle suspensions, are successfully infiltrated with fullerene acceptor molecules, C 60 or PC 61 BM, in both polar and nonpolar solvent environments. The location and relative binding strength of these guest species are evaluated through a combination of N 2 physisorption measurements, photoluminescence quenching, and UV–vis absorption titration experiments. Semiempirical tight binding calculations are used to screen potential locations of the fullerene guest within the MOF pores, and hybrid density functional theory (DFT)-computed interaction energies confirm the energetically favorable positions. The fundamental photophysics of these donor–acceptor host–guest combinations are probed using ultrafast transient absorption spectroscopy. Sub-picosecond electron transfer involving initial exciplex population is observed, with slow charge recombination lifetimes on the order of τ ~1 ns for all systems in both dimethylformamide and 1,4-dioxane. Charge recombination occurs through population of fullerene and/or framework porphyrin triplet states depending on the porphyrin metalation status. The photophysics of the fullerene-loaded MOFs are discussed in the context of relevant porphyrin–fullerene donor–acceptor molecules to highlight the unique role of the framework environment in dictating photoinduced electron transfer and decay pathways.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Study of Luminescence Characteristics of Trivalent Terbium in Silicate Glass

An important use of silicate glasses doped with terbium oxide (Tb2O3) is their use as fiber optic sensors for high-resolution imaging applications requiring the detection of x-rays (e.g. tomography and radiography). The x-ray radiation is absorbed by the glass, producing electron-hole pairs (excitons). The excitons migrate through the glass matrix and then recombine, emitting characteristic Tb(3+) luminescence in the optical wavelength region. This emission is due to forbidden transitions of 4f electrons and therefore has a long decay time. Long decay time is undesirable when imaging transient events since it results in blurring in time of the images. It has been reported elsewhere that in crystals Tb(3+) ions can act both as luminescence centers and as fluorescence traps. These traps can capture excitons and delay their recombination. This delayed fluorescence is seen as a long lived, secondary component to the luminescence decay curve, or afterglow. Such a secondary decay component to the luminescence decay of Tb(3+) has been observed before in soda glass following pulsed optical excitation. In order to determine the conditions under which afterglow occurs, an understanding of the material's luminescent properties is required.

West, Mike S.↗

Complete polarization of electronic spins in OLEDs

At low temperatures and high magnetic fields, electron and hole spins in an organic light-emitting diode become polarized so that recombination preferentially forms molecular triplet excited-state species. For low device currents, magnetoelectroluminescence perfectly follows Boltzmann activation, implying a virtually complete polarization outcome. As the current increases, the magnetoelectroluminescence effect is reduced because spin polarization is suppressed by the reduction in carrier residence time within the device. Under these conditions, an additional field-dependent process affecting the spin-dependent recombination emerges, possibly related to the build-up of triplet excitons and their interaction with free charge carriers. Suppression of the EL alone does not prove electronic spin polarization. We therefore probe changes in the spin statistics of recombination directly in a dual singlet-triplet emitting material, which shows a concomitant rise in phosphorescence intensity as fluorescence is suppressed. Finite spin-orbit coupling in these materials gives rise to a microscopic distribution in effective g-factors of electrons and holes, Δg, i.e., a distribution in Larmor frequencies. This Δg effect in the pair, which mixes singlet and triplet, further suppresses singlet-exciton formation at high fields in addition to thermal spin polarization of the individual carriers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗