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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Equivalent circuit and modified and approximate models for metal oxide semiconductor-field effect transistor devices, and adaptability to computerized circuit design
Screening methods for metal oxide semiconductor field effect transistors and resistors, impact survival testing of spacecraft electronic parts, and parachute jettisoning from planetary capsules
Field effect transistor modulator suitable for ground based telemetry applications
Spacecraft analog to digital conversion system employing metal oxide semiconductor field effect transistors
Insulated gate field effect transistor with adaptive and memory characteristics
Integrated nonvolatile read-write memory with addressing using variable threshold field effect transistor including cell operation, channel shielding and circuit
Switch uses a combination of N-channel and P-channel Metal Oxide Semiconductor Field Effect Transistors /MOSFET/ to obtain a normally open switch with no power applied. Series-shunt-series MOSFET switching achieves high input-output isolation.
Miniaturized circuit improves measurement of radiation dose absorbed in a scintillation crystal. The temperature coefficient of the field-effect transistor gate-source voltage in the isolation amplifier can be readily controlled.
Circuit configuration consisting of matched differential amplifier, temperature compensated zener diode, and low pinchoff-voltage field effect transistor provides accurate and stable current supply for temperature sensor devices.
Electronic amplifier contains matched pair of metal oxide semiconductor field effect transistor devices which have high input impedance and long-term stability. Thermistor in feedback loop provides temperature compensation for large drifts in the sensor.
Electronic circuit using operational amplifiers provides output with constant phase shift amplitude, with respect to sinusoidal input, over wide range of frequencies. New circuit includes field effect transistor, Q, operational amplifiers, A1 and A2, and phase detector.
Frequency to analog converters with unipolar field effect transistor for determining potential charge by pulse duration of input signal
Metal oxide silicon field effect transistors for integrated circuitry in data processing
High energy electron irradiation effects on field effect transistors in integrated circuit devices
Multivibrator circuit, which includes constant current source, isolates line noise from timing circuitry and field effect transistor controls circuit's operational modes. Circuit has high immunity to supply line noise.
Filter is devised by using insulated-gate field-effect transistors for remote control. Transistors are P-channel devices that operate in enhancement mode and are commercially available.
Minimization of common mode effects in differential amplifier arrangement which processes signals from two high impedance photosensors is achieved by connecting one photosensor in feedback loop of amplifier and using field effect transistors in the input circuit.
The object of this program is to improve the detectivity of the pyroelectric detector with the ultimate goal of operation at or near the temperature-noise limit. Two general areas of investigation are undertaken. The first is to improve responsivity through the use of new materials. The second is directed toward reduction of noise and will be effected with improved field effect transistor characteristics, and improved electroding of the pyroelectric material. The search for new materials has begun with a review of the literature on pyroelectric materials in several languages. The compiled data includes an extensive list of references. From this, several materials have already been selected for investigation. FETs are being obtained from various manufacturers, evaluated, and selected units will be tested with pyroelectric elements as complete detectors.