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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
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NASA NTRS1987

Material interactions with the Low Earth Orbital (LEO) environment: Accurate reaction rate measurements

To resolve uncertainties in estimated LEO atomic oxygen fluence and provide reaction product composition data for comparison to data obtained in ground-based simulation laboratories, a flight experiment has been proposed for the space shuttle which utilizes an ion-neutral mass spectrometer to obtain in-situ ambient density measurements and identify reaction products from modeled polymers exposed to the atomic oxygen environment. An overview of this experiment is presented and the methodology of calibrating the flight mass spectrometer in a neutral beam facility prior to its use on the space shuttle is established. The experiment, designated EOIM-3 (Evaluation of Oxygen Interactions with Materials, third series), will provide a reliable materials interaction data base for future spacecraft design and will furnish insight into the basic chemical mechanisms leading to atomic oxygen interactions with surfaces.

Visentine, James T.↗
NASA NTRS1987

Martin Marietta atomic oxygen Low Earth Orbit (LEO) simulation

An atomic oxygen beam apparatus that produces flux levels and atomic kinetic energy similar to that encountered by spacecraft in low Earth orbit (LEO) is described. The beam apparatus consists of an electric discharge ion source, mass filter, decelerator, and neutralizer. Specific design goals include a 1.3 cm beam diameter, a 5 eV beam energy, and a flux density on the order of 10(15) cm(-2) s(-1). The total fluence will be on the order of 10(19) cm(-2) for an 8 hour test. The neutral oxygen beam will expose various materials contained within a large target chamber. Within the chamber will be a rather complex suite of instrumentation that will allow real-time studies of material mass loss and reactant species spatial distribution. In addition, a UV solar simulator will aid in the understanding of various synergistic effects.

Sjolander, Gary W.↗
NASA NTRS1987

Design study of large area 8 cm x 8 cm wrapthrough cells for space station

The design of large area silicon solar cells for the projected NASA space station is discussed. It is based on the NASA specification for the cells which calls for an 8 cm by 8 cm cell of wrapthrough type with gridded back contacts. The beginning of life (BOL) power must be 1.039 watts per cell or larger and maximum end of life (EOL) after 10 years in the prescribed orbit under an equivalent 1MeV electron radiation damage fluence of 5 times 10 to the 13th power e/square cm. On orbit efficiency is to be optimized by a low thermal absorptance goal (thermal alpha) of .63.

Garlick, George F. J.↗
NASA NTRS1987

Results of 1 MeV proton irradiation of front and back surfaces of silicon solar cells

Several silicon solar cells with and without back surface fields (BSF), having thicknesses of 200 microns and 63 microns were irradiated with 1 MeV protons having fluences between 1 times 10 to the 10th power and 1 times 10 to the 12th power p/square cm. The irradiation was performed using both normal and isotropic incidence on the front as well as back surfaces of the solar cells. The results of the back surface irradiations are analyzed using a model in which irradiation induced defects across the high-low (BSF) junction are considered. It is concluded that degradation of the high-low junction is responsible for the severe performance loss in thinner cells when irradiated from the rear.

Anspaugh, B. E.↗
NASA NTRS1987

Calculations of the displacement damage and short-circuit current degradation in proton irradiated (AlGa)As-GaAs solar cells

A theoretical model for computing the displacement damage defect density and the short-circuit current (I sub sc) degradation in proton-irradiated (AlGa)As-GaAs p-n junction solar cells is presented. Assumptions were made with justification that the radiation induced displacement defects form an effective recombination center which controls the electron and hole lifetimes in the junction space charge region and in the n-GaAs active layer of the irradiated GaAs p-n junction cells. The degradation of I sub sc in the (AlGa)As layer was found to be negligible compared to the total degradation. In order to determine the I sub sc degradation, the displacement defect density, path length, range, reduced energy after penetrating a distance x, and the average number of displacements formed by one proton scattering event were first calculated. The I sub sc degradation was calculated by using the electron capture cross section in the p-diffused layer and the hole capture cross section in the n-base layer as well as the wavelength dependent absorption coefficients. Excellent agreement was found between the researchers calculated values and the measured I sub sc in the proton irradiated GaAs solar cells for proton energies of 100 KeV to 10 MeV and fluences from 10 to the 10th power p/square cm to 10 to the 12th power p/square cm.

Yeh, C. S.↗
NASA NTRS1986

Studies of implanted iron in silicon by channeling and Rutherford backscattering

Different amounts of 100-keV iron ions have been implanted into high-resistivity p-type FZ-silicon samples. The implantation damage, recovery of damage during various annealing periods and temperatures, movement of iron atoms under annealing and oxidation, and the kinds of defects created after implantation, annealing, or oxidation are all investigated by channeling and backscattering measurements. It is found that the critical fluence of 100-keV iron implanted into silicon at room temperature is about 2.5 x 10 to the 14th Fe/sq cm, and that iron atoms are gettered by silicon oxidation. In this supersaturated region, iron atoms diffuse slightly towards bulk silicon during high-temperature annealing (greater than or equal to 1100 C) but not at all during low-temperature annealing (less than or equal to 1000 C) in dry nitrogen ambient.

Wang, P. W.↗
NASA NTRS1986

Cell performance and defect behavior in proton-irradiated lithium-counterdoped n(+)p silicon solar cells

Lithium-counterdoped n(+)p silicon solar cells were irradiated by 10-MeV protons, and their performance was determined as a function of fluence. It was found that the cell with the highest lithium concentration exhibited the higher radiation resistance. Deep-level transient spectroscopy studies of deep-level defects were used to identify two lithium-related defects. Defect energy levels obtained after the present 10-MeV irradiations were found to be markedly different than those observed after previous 1-MeV electron irradiations. However, the present DLTS data are consistent with previous suggestion by Weinberg et al. (1984) of a lithium-oxygen interaction which tends to inhibit formation of an interstitial boron-oxygen defect.

Weinberg, I.↗
NASA NTRS1985

Potential for use of InP solar cells in the space radiation environment

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

Weinberg, I.↗
NASA NTRS1986

Spatial resolution and nature of defects produced by low-energy proton irradiation of GaAs solar cells

AlGaAs/GaAs solar cells with about 0.5-micron-thick Al(0.85)Ga(0.15)As window layers were irradiated using isotropic and normal incidence protons having energies between 50 and 500 keV with fluences up to 1 x 10 to the 12th protons/sq cm. Although the projected range for these protons varies from 0 to more than 4.5 microns, the recombination losses due to the irradiation-induced defects were observed to be maximum in the vicinity of the AlGaAs/GaAs interface and the space-charge region irrespective of the proton energy. This was found by analyzing spectral response measurements. The results are explained by using a model in which the interaction of as-grown dislocations with irradiation-induced point defects is considered.

Kachare, R.↗
NASA NTRS1987

Evidence in meteorites for an active early sun

High-sensitivity noble gas mass-spectrometric analyses of meteorite grains having solar flare heavy ion tracks show large enrichments of spallation-produced Ne-21 and Ar-38 when compared to nonirradiated grains from the same meteorite. The enhanced spallation effects in the irradiated grains are due to irradiation by energetic protons early in the history of the solar system, before compaction of the host meteorite. They require a proton fluence (E greater than 10 MeV) of 10 to the 16th to 10 to the 18th/cu cm. These results are best explained by solar flare irradiation in the early solar system with a proton flux several orders of magnitude higher than contemporary solar flares. The Ne isotopic structure suggests a harder energy spectrum than is characteristic of contemporary flares. These observations provide direct evidence for an active early (T Tauri) sun.

Caffee, M. W.↗
NASA NTRS1987

Nucleogenic noble gas components in the Cape York iron meteorite

The paper reports data on neutron capture products of the secondary cosmic ray component, the inferred proton and neutron fluences, and the identification of double beta decay of Se-82 in heavily shielded samples of the Cape York iron meteorite. One purpose of this study is to develop a new chronometer for cosmic ray exposure, based on the nuclides I-129 (16 My half-life) and Xe-129 from low energy cosmic ray reactions on Te. The abundance ratio of these two nuclides permits the determination of an (effective) exposure age of 93 + or - 16 My, which represents the first exposure age datum of Cape York. The very small concentrations of spallogenic Ar-38 = 6.5 x 10 to the -10th cu cm STP/g in the metal and troilite (per g Fe) document the heavily shielded locations of the sample. An excess of Xe-129 in the troilite is shown to be entirely due to the decay of cosmic-ray-produced I-129. On the other hand, an inclusion in the troilite reveals the presence of Xe-129 from extinct I-129 and documents its about 4.5 Gy formation age. Mono-isotopic excess of Kr-82 is identified as due to beta-beta-decay of Se-82 with an inferred half-life of 1.0 x 10 to the 20th y. This represents the first beta-beta-decay product observed in a meteorite.

Murty, S. V. S.↗
NASA NTRS1986

SMM observation of a cosmic gamma-ray burst from 20 keV to 100 MeV

The Solar Maximum Mission gamma-ray spectrometer has detected an intense gamma-ray burst that occurred on August 5, 1984. The burst originated from a source in the constellation Hydra and lasted about 45 s. Its integral fluence at 20 keV was 0.003 erg/sq cm. Spectral evolution similar to other bursts detected by SMM was observed. The overall shape of the spectrum from 20 keV to 100 MeV, on timescales as short as 2 s, is relatively constant. This shape can be fitted by the sum of an exponential-type function and a power law. There is no evidence for narrow or broadened emission lines.

Share, G. H.↗
NASA NTRS1987

A second catalog of gamma-ray bursts - 1978-1980 localizations from the interplanetary network

A catalog of 84 gamma-ray bursts which occurred between September 14, 1978 and February 13, 1980 is presented. The data presented consist of earth crossing times, given to about the nearest second, and time histories, in the tens of keV to MeV range, for all 84 events, as well as localizations for 80 of the events. The localizations, derived from arrival-time analysis, are given as single error boxes, double error boxes, or annuli of location, and, where possible, have been compared to the Konus localizations. They range in size from less than a square arcminute to over 1000 square degrees. The fluences of the bursts cataloged are in the range 3 x 10 to the -7th ergs/sq cm and above.

Atteia, J.-L.↗
NASA NTRS1987

Exosat observations of 4U/MXB 1636-53 - On the relation between the amount of accreted fuel and the strength of an X-ray burst

During Exosat observations of 4U/MXB 1636-53 in August 1985, three bursts were observed in 6 h and 24 bursts in 79 h of uninterrupted observation. The burst times, burst fluences, peak burst fluxes, burst rise times, decay times, burst intervals, mean persistent fluxes, and the product of the latter two are listed, analyzed, and discussed. The implications of the results for thermonuclear flash models are examined. A model which fits the data well involves bursts which suffer from nuclear energy losses due to stable hydrogen burning between bursts. Thus, the percentage of 'lost' energy increases with increasing burst intervals. For individual bursts, however, there are significant deviations from the approximate linear relationship.

Lewin, W. H. G.↗
NASA NTRS1987

Effects of electron and proton irradiations on n/p and p/n GaAs cells grown by MOCVD

State-of-the-art n/p and p/n heteroface GaAs cells, processed by metal organic chemical vapor deposition, were irradiated by 1 MeV electrons and 37 MeV protons and their performance determined as a function of fluence. It was found that the p/n cells were more radiation resistant than the n/p cells. The increased loss in the n/p cells was attributed to increases in series resistance and losses in the p-region resulting from the irradiation. The greater loss in fill factor observed for the n/p cells introduces the possibility that the presently observed superiority of the p/n cells may not be an intrinsic property of this configuration in GaAs.

Weinberg, Irving↗
NASA NTRS1987

Neutron radiation tolerance of Au-activated silicon

Double injection devices prepared by the introduction of deep traps, using the Au activation method have been found to tolerate gamma irradiation into the Gigarad (Si) region without significant degradation of operating characteristics. Silicon double injection devices, using deep levels creacted by Au diffusion, can tolerate fast neutron irradiation up to 10 to the 15th n/sq cm. Significant parameter degradation occurs at 10 to the 16th n/sq cm. However, since the actual doping of the basic material begins to change as a result of the transmutation of silicon into phosphorus for neutron fluences greater than 10 to the 17th/sq cm, the radiation tolerance of these devices is approaching the limit possible for any device based on initially doped silicon.

Joyner, W. T.↗
NASA NTRS1988

Preliminary estimates of radiation exposures for manned interplanetary missions from anomalously large solar flare events

Preliminary estimates of radiation exposures for manned interplanetary missions resulting from anomalously large solar flare events are presented. The calculations use integral particle fluences for the February 1956, November 1960, and August 1972 events as inputs into the Langley Research Center nucleon transport code BRYNTRN. This deterministic code transports primary and secondary nucleons (protons and neutrons) through any number of layers of target material of arbitrary thickness and composition. Contributions from target nucleus fragmentation and recoil are also included. Estimates of 5 cm depth doses and dose equivalents in tissue are presented behind various thicknesses of aluminum, water, and composite aluminum/water shields for each of the three solar flare events.

Townsend, Lawrence W.↗
NASA NTRS1987

Recent developments in indium phosphide space solar cell research

Recent developments and progress in indium phosphide solar cell research for space application are reviewed. Indium phosphide homojunction cells were fabricated in both the n + p and p + n configurations with total area efficiencies of 17.9 and 15.9 percent (air mass 0 and 25 C) respectively. Organometallic chemical vapor deposition, liquid phase epitaxy, ion implantation and diffusion techniques were employed in InP cell fabrication. A theoretical model of a radiation tolerant, high efficiency homojunction cell was developed. A realistically attainable AM0 efficiency of 20.5 percent was calculated using this model with emitter and base doping of 6 x 10 to the 17th power and 5 x 10 to the 16th power/cu cm, respectively. Cells of both configurations were irradiated with 1 MeV electrons and 37 MeV protons. For both proton and electron irradiation, the n + p cells are more radiation resistant at higher fluences than the p + n cells. The first flight module of four InP cells was assembled for the Living Plume Shield III satellite.

Brinker, David J.↗