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NASA NTRS1995

Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell

The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.

Alfano, R. R.↗

NASA NTRS1995

Sinterless Formation Of Contacts On Indium Phosphide

Improved technique makes it possible to form low-resistivity {nearly equal to 10(Sup-6) ohm cm(Sup2)} electrical contacts on indium phosphide semiconductor devices without damaging devices. Layer of AgP2 40 Angstrom thick deposited on InP before depositing metal contact. AgP2 interlayer sharply reduces contact resistance, without need for sintering.

Weizer, Victor G.↗

NASA NTRS1995

Metal colloids and semiconductor quantum dots: Linear and nonlinear optical properties

One aspect of this project involves a collaborative effort with the Solid State Division of ORNL. The thrust behind this research is to develop ion implantion for synthesizing novel materials (quantum dots wires and wells, and metal colloids) for applications in all optical switching devices, up conversion, and the synthesis of novel refractory materials. In general the host material is typically a glass such as optical grade silica. The ions of interest are Au, Ag, Cd, Se, In, P, Sb, Ga and As. An emphasis is placed on host guest interactions between the matrix and the implanted ion and how the matrix effects and implantation parameters can be used to obtain designer level optical devices tailored for specific applications. The specific materials of interest are: CdSe, CdTe, InAs, GaAs, InP, GaP, InSb, GaSb and InGaAs. A second aspect of this research program involves using porous glass (25-200 A) for fabricating materials of finite size. In this part of the program, we are particularly interested in characterizing the thermodynamic and optical properties of these non-composite materials. We also address how phase diagram of the confined material is altered by the interfacial properties between the confined material and the pore wall.

Henderson, D. O.↗

NASA NTRS1995

Proceedings of the 14Th Space Photovoltaic Research and Technology Conference (SPRAT 14)

The Fourteenth Space Photovoltaic Research and Technology conference was held at the NASA Lewis Research Center from October 24-26, 1995. The abstracts presented in this volume report substantial progress in a variety of areas in space photovoltaics. Technical and review papers were presented in many areas, including high efficiency GaAs and InP solar cells, GaAs/Ge cells as commercial items, high efficiency multiple bandgap cells, solar cell and array technology, heteroepitaxial cells, thermophotovoltaic energy conversion, and space radiation effects. Space flight data on a variety of cells were also presented.

Landis, Geoffrey↗

NASA NTRS1995

Low Intensity Low Temperature (LILT) measurements and coefficients on new photovoltaic structures

Past NASA missions to Mars, Jupiter, and the outer planets were powered by radioisotope thermal generators (RTG's). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaic (PV) and thermophotovoltaic (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV and TPV data base for planetary mission planners and cell designers, we have compiled low temperature low intensity (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate dI(sub SC)/dT, dV(sub OC)/dT, dFF/dT, and also as a function of intensity, an accurate prediction of cell performance under the AMO spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GainP/GaAs/Ge, InP, InGaAs/InP, InP/InGaAs/InP, and GainP. Temperatures range as low as -175 C and intensities range from 1 sun to .02 suns.

Schelman, David A.↗

NASA NTRS1995

One year of flight data from the PASP-Plus experiment

The PASP-Plus (Photovoltaic Array Space Power Plus Diagnostics) program is a photovoltaic experiment which is flying on the Air Force satellite APEX (Advanced Photovoltaic and Electronics Experiments). The satellite was launched on August 3, 1994 with a Pegasus low-cost launch vehicle. There are two other small experiments on APEX, however PASP-Plus is the largest, uses the most power, and accounts for the largest portion of the data requirements. The satellite is in an elliptical orbit with an apogee of 2552 km and a perigee of 363 km. The inclination is 70 degrees. The PASP-Plus experiment consists of twelve photovoltaic panels containing a total of sixteen separate cell modules. Two of the modules are concentrator modules, while the rest are planar. There are several different solar cell types flying on PASP-Plus including silicon, GaAs on germanium substrates, InP, amorphous silicon, and three multi-bandgap cells. The purpose of this paper is to present some of the data from the first year of the PASP-Plus flight. Cell performance and module thermal performance will be discussed as well as other relevant data.

Curtis, Henry↗

NASA NTRS1995

High-voltage space-plasma interactions measured on the PASP Plus test arrays

The Photovoltaic Array Space Power Plus Diagnostics (PASP Plus) experiment was developed by the Air Force's Phillips Laboratory with support from NASA's Lewis Research Center. It was launched on the Advanced Photovoltaic and Electronics EXperiments (APEX) satellite on August 3, 1994 into a 70 degree inclination, 363 km by 2550 km elliptical orbit. This orbit allows the investigation of space plasma effects on high-voltage operation (leakage current at positive voltages and arcing at negative voltages) in the perigee region. PASP Plus is testing twelve solar arrays. There are four planar Si arrays: an old standard type (used as a reference), the large-cell Space Station Freedom (SSF) array, a thin 'APSA' array, and an amorphous Si array. Next are three GaAs on Ge planar arrays and three new material planar arrays, including InP and two multijunction types. Finally, there are two concentrator arrays: a reflective-focusing Mini-Cassegrainian and a Fresnel-lens focusing Mini-Dome. PASP Plus's diagnostic sensors include: Langmuir probe to measure plasma density, an electrostatic analyzer (ESA) to measure the 30 eV to 30 KeV electron/ion spectra and determine vehicle negative potential during positive biasing, and a transient pulse monitor (TPM) to characterize the arcs that occur during the negative biasing. Through positive biasing of its test arrays, PASP Plus investigated the snapover phenomenon, which took place over the range of +100 to +300 V. It was found that array configurations where the interconnects are shielded from the space plasma (i.e., the concentrators or arrays with 'wrap-through' connectors) have lower leakage current. The concentrators exhibited negligible leakage current over the whole range up to +500 V. In the case of two similar GaAs on Ge arrays, the one with 'wrap-through' connectors had lower leakage current than the one with conventional interconnects. Through negative biasing, PASP Plus investigated the arcing rates of its test arrays. The standard Si array, with its old construction (exposed rough-surface interconnects), arced significantly over a wide voltage and plasma-density range. The other arrays arced at very low rates, mostly at voltages greater than -350 V and plasma densities near or greater than 10(exp 5)/cm(exp -3). AS expected according to theory, arcing was more prevalent when array temperatures were cold (based on biasing in eclipse).

Guidice, Donald A.↗

NASA NTRS1995

InGaAs/InP solar cells for space application

The effects of irradiation of In(0.53)Ga(0.47)As/InP (InGaAs/InP) solar cells illuminated through a transparent InP substrate with 1 MeV electrons were measured. These solar cells were developed for bottom cells in tandem solar photovoltaic cell structures. Some InGaAs/InP heterostructures with four layers were grown by liquid phase epitaxy. The structure of the solar cells allowed lightly doped materials in n and p photoactive layers to be used. The base dopant levels ranged from 1.10(exp 17) to 5.10(exp 17) cm(exp -3). The open circuit voltage and the short circuit current were moderately degraded after irradiation with 10(exp 16) cm(exp-2) 1 MeV electrons. This behavior is explained in terms of the device structure and the n and p layer thicknesses.

Karlina, L. B.↗

NASA NTRS1995

Low temperature Zn diffusion for GaSb solar cell structures fabrication

Low temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.

Sulima, Oleg V.↗

NASA NTRS1995

Integrated Cryogenic Satellite Communications Cross-Link Receiver Experiment

An experiment has been devised which will validate, in space, a miniature, high-performance receiver. The receiver blends three complementary technologies; high temperature superconductivity (HTS), pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuits (MMIC), and a miniature pulse tube cryogenic cooler. Specifically, an HTS band pass filter, InP MMIC low noise amplifier, HTS-sapphire resonator stabilized local oscillator (LO), and a miniature pulse tube cooler will be integrated into a complete 20 GHz receiver downconverter. This cooled downconverter will be interfaced with customized signal processing electronics and integrated onto the space shuttle's 'HitchHiker' carrier. A pseudorandom data sequence will be transmitted to the receiver, which is in low Earth orbit (LEO), via the Advanced Communication Technology Satellite (ACTS) on a 20 GHz carrier. The modulation format is QPSK and the data rate is 2.048 Mbps. The bit error rate (BER) will be measured in situ. The receiver is also equipped with a radiometer mode so that experiment success is not totally contingent upon the BER measurement. In this mode, the receiver uses the Earth and deep space as a hot and cold calibration source, respectively. The experiment closely simulates an actual cross-link scenario. Since the receiver performance depends on channel conditions, its true characteristics would be masked in a terrestrial measurement by atmospheric absorption and background radiation. Furthermore, the receiver's performance depends on its physical temperature, which is a sensitive function of platform environment, thermal design, and cryocooler performance. This empirical data is important for building confidence in the technology.

Romanofsky, R. R.↗

NASA NTRS1995

Low Earth Orbit satellite traffic simulator

This paper describes a significant tool for Low Earth Orbit (LEO) capacity analysis, needed to support marketing, economic, and design analysis, known as a Satellite Traffic Simulator (STS). LEO satellites typically use multiple beams to help achieve the desired communication capacity, but the traffic demand in these beams in usually not uniform. Simulations of dynamic, average, and peak expected demand per beam is a very critical part of the marketing, economic, and design analysis necessary to field a viable LEO system. An STS is described in this paper which can simulate voice, data and FAX traffic carried by LEO satellite beams and Earth Station Gateways. It is applicable world-wide for any LEO satellite constellations operating over any regions. For aeronautical applications to LEO satellites. the anticipates aeronautical traffic (Erlangs for each hour of the day to be simulated) is prepared for geographically defined 'area targets' (each major operational region for the respective aircraft), and used as input to the STS. The STS was designed by Constellations Communications Inc. (CCI) and E-Systems for usage in Brazil in accordance with an ESCA/INPE Statement Of Work, and developed by Analytical Graphics Inc. (AGI) to execute on top of its Satellite Tool Kit (STK) commercial software. The STS simulates constellations of LEO satellite orbits, with input of traffic intensity (Erlangs) for each hour of the day generated from area targets (such as Brazilian States). accumulated in custom LEO satellite beams, and then accumulated in Earth Station Gateways. The STS is a very general simulator which can accommodate: many forms of orbital element and Walker Constellation input; simple beams or any user defined custom beams; and any location of Gateways. The paper describes some of these features, including Manual Mode dynamic graphical display of communication links, to illustrate which Gateway links are accessible and which links are not, at each 'step' of the satellite orbit. In the two Performance Modes, either Channel capacity or Grade Of Service (GOS) for objects (Satellite beams, Gateways, and an entire satellite) are computed respectively by standard traffic table capacity lookup and blocking probability equations. GOS can be input, with number of channels calculated, or number of channels can be input, with GOS calculated. Also described are some of the STS Test Procedure approach and results. AGI plans to make the STS features available through their normal commercial STK products. E-Systems is a co-developer, tester, and user of the STS. The Test Procedure for the STS was prepared by E-Systems, as an independent tester for CCI, to support the CCI delivery of the STS to ESCA, for their customer INPE.

Hoelzel, John↗

NASA NTRS1996

Space Photovoltaic Research and Technology 1995

Geoffrey Landis↗

NASA NTRS1996

Momentum Transfer Studies and Studies of Linear and Nonlinear Optical Properties of Metal Colloids and Semiconductor Quantum Dots

Phase 1 of this work involved design work on a momentum transfer device. The progress on design and testing will be presented. Phase 2 involved the systematic study of the MPD thruster for dual uses. Though it was designed as a thruster for space vehicles, the characteristics of the plasma make it an excellent candidate for industrial applications. This project sought to characterize the system for use in materials processing and characterization. The surface modification on ZnCdTe, CdTe, and ZnTe will be presented. Phase 3 involved metal colloids and semiconductor quantum dots. One aspect of this project involves a collaborative effort with the Solid State Division of ORNL. The thrust behind this research is to develop ion implantation for synthesizing novel materials (quantum dots wires and wells, and metal colloids) for applications in all optical switching devices, up conversion, and the synthesis of novel refractory materials. The ions of interest are Au, Ag, Cd, Se, In, P, Sb, Ga, and As. The specific materials of interest are: CdSe, CdTe, InAs, GaAs, InP, GaP, InSb, GaSb, and InGaAs. A second aspect of this research program involves using porous glass (25-200 A) for fabricating materials of finite size. The results of some of this work will also be reported.

Collins, W. E.↗

NASA NTRS1995

Optically-Switched Resonant Tunneling Diodes for Space-Based Optical Communication Applications

We are developing a new type of digital photo-receiver that has the potential to perform high speed optical-to-electronic conversion with a factor of 10 reduction in component count and power dissipation. In this paper, we describe the room-temperature photo-induced switching of this InP-based device which consists of an InGaAs/AlAs resonant tunneling diode integrated with an InGaAs absorber layer. When illuminated at an irradiance of greater than 5 Wcm(exp -2) using 1.3 micromillimeter radiation, the resonant tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of up to 800 mV.

Moise, T. S.↗

NASA NTRS1996

Deforestation and Biogenic Trace Emissions from Brazilian Cerrado

The overall goal of NASA's SCAR (Smoke, Cloud and Radiation) Program is to obtain physical and chemical properties of the smoke produced by biomass burning and the effects of the smoke on the earth's radiation balance and climate. It is a joint project with the Brazilian government and their organizations, including INPE (Instituto Nacional Pesquisas Espaciais) who actively participate in all activities. Appropriate estimates of the biomass buming in the tropics is therefore essential to determine its effect on the atmosphere and on climate. The SCAR series of experiments is designed with that purpose. The present study of evaluating the burnt-out areas is to augment the data collected to date to help evaluate the effect of biomass burning.

Sinha, Ravi↗

NASA NTRS1997

Electrical and Optical Performance Characteristics of 0.74-eV p/n InGaAs Monolithic Interconnected Modules

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74-eV InGaAs, have demonstrated V(sub oc) = 3.2 volts, J(sub sc) = 70 mA/sq cm, and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (greater than 2 micron) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55-eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

Wilt, David M.↗

NASA NTRS1997

Electrical and Optical Performance Characteristics of p/n InGaAs Monolithic Interconnected Modules

There has been a traditional trade-off in ThermoPhotoVoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A Monolithic Interconnected Module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual Indium Gallium Arsenide (InGaAs) devices series-connected on a single semi-insulating Indium Phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An InfraRed (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74eV InGaAs, have demonstrated V(sub infinity) = 3.2 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. IR reflectance measurements (greater than 2 microns) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55 eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

Wilt, David M.↗

NASA NTRS1998

A Review of Recent Thermophotovoltaic Energy Conversion Technology Development at NASA Lewis Research Center

NASA Lewis Research Center (LeRC) has had an ongoing research program in TPV since the late 1980's. This effort has included both in-house research programs on critical components such as photovoltaic cells (PV) and emitter materials, as well as an active contracting effort directed toward system, and component development. Of particular note is the in-house development of thin film selective emitters fabricated from rare-earth yttrium aluminum garnets (YAG). Also developed at LeRC is a Monolithic Interconnect Module (MIM) consisting of many small InGaAs cells series interconnected on a single InP substrate. An infrared reflector placed on the rear surface of the substrate returns unabsorbed photons to the emitter for recycling. The current contracted efforts include two TPV system developments by Tecogen, Inc., a solar powered TPV system development, a GaInAsSb cell development and several emitter development efforts (plasma-sprayed selective emitters, flexible SiC and a selective emitting light pipe).

Wilt, David M.↗