Switching properties of a partially set square- loop ferrite core.
Switching properties of partially set square-loop ferrite core, noting flux level influence, measurement techniques, etc
FERRITE↗
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Models for elastic and inelastic flux switching.
Elastic and inelastic flux switching, explaining different types of domain wall displacement in terms of variations of energy gradient vs wall position
DOMAIN WALL MOTION↗
On electromagnetic switching properties of a bi-stable fluidic element with non-destructive memory
Electromagnetic switching properties of bistable, magnetically permeable liquid bead with nondestructive memory for gas flow control
De Furia, R.↗
Single-channel pressure telemetry unit.
Single channel pressure telelmetry unit with magnetic latching or RF switch for chronic implantation
Datnow, B.↗
Curie-point switching in Mn-Bi films
Mn-Bi films Curie point switching with laser, measuring magnetization dependence via magneto- optic effect
Lewicki, G. W.↗
Superconductivity devices: Commercial use of space
The high T(sub c) superconducting ceramic materials, developed in 1987, are now being extensively investigated for a variety of engineering applications. These applications include such devices as conducting links, rotating and linear bearings, sensors, filters, switches, high Q cavities, magnets, and motors. Some of these devices take advantage of the material's ability to lose all electrical resistance at a critical temperature, T(sub c), while others make use of the repulsion forces generated between the magnetic field of a permanent magnet and a superconductor which is cooled below its T(sub c), Meissner effect. This report describes the work accomplished to date by: (1) reviewing the present state of the art in actuator technology, (2) evaluating processing and fabrication of high strain electrostrictive materials, and (3) testing these electrostrictive materials.
Haertling, Gene↗
Magnetostrictive Fe{sub 73}Ga{sub 27} nanocontacts for low-field conductance switching
The electrical conductance G of magnetostrictive nanocontacts made from Galfenol (Fe{sub 73}Ga{sub 27}) can be reproducibly switched between “on” and “off” states in a low magnetic field of ∼20–30 mT at 10 K. The switching behavior is in agreement with the magnetic field dependence of the magnetostriction inferred from the magnetization behavior, causing a positive magnetostrictive strain along the magnetic field. The repeated magnetic-field cycling leads to a stable contact geometry and to a robust contact configuration with a very low hysteresis of ∼1 mT between opening and closing the contact due to a training effect. Non-integral multiples of the conductance quantum G{sub 0} observed for G > G{sub 0} are attributed to electron backscattering at defect sites in the electrodes near the contact interface. When the contact is closed either mechanically or by magnetic field, the conductance shows an exponential behavior below G{sub 0} due to electron tunneling. This allows to estimate the magnetostriction λ = 4 × 10{sup −5} at 10 K. The results demonstrate that such magnetostrictive devices are suitable for the remote control of the conductance by low magnetic fields in future nanotechnology applications.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design
Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magneti- zation dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show here, that by relaxing the strict criterion on pure antiferromagnetism, we can engineer a new class of magnetic materials that 1 overcome these limitations. This is accomplished by stabilizing a non-collinear mag- netic phase in LaNiO 3 /La 2/3 Sr 1/3 MnO 3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying either superlattice spacing, strain, applied magnetic field, or temperature. By using this new “knob” to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagnetic-like controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable proper- ties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the non-collinear antiferromagnet is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.
36 MATERIALS SCIENCE↗
Tunable exchange bias-like effect in patterned hard-soft two-dimensional lateral composites with perpendicular magnetic anisotropy
Patterned hard-soft 2D magnetic lateral composites have been fabricated by e-beam lithography plus dry etching techniques on sputter-deposited NdCo{sub 5} thin films with perpendicular magnetic anisotropy. Their magnetic behavior is strongly thickness dependent due to the interplay between out-of-plane anisotropy and magnetostatic energy. Thus, the spatial modulation of thicknesses leads to an exchange coupled system with hard/soft magnetic regions in which rotatable anisotropy of the thicker elements provides an extra tool to design the global magnetic behavior of the patterned lateral composite. Kerr microscopy studies (domain imaging and magneto-optical Kerr effect magnetometry) reveal that the resulting hysteresis loops exhibit a tunable exchange bias-like shift that can be switched on/off by the applied magnetic field.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
RKKY Exchange Bias Mediated Ultrafast All-Optical Switching of a Ferromagnet
The discovery of ultrafast helicity-independent all-optical switching (HI-AOS), as well as picosecond all-electrical switching of a ferrimagnet, has inspired the ultrafast spintronics community to explore ultrafast switching of a ferromagnet to achieve practical ultrafast storage and memory devices. Two explored mechanisms of HI-AOS of a ferromagnet in ferromagnet-ferrimagnet heterostructure are: a) exploiting the indirect exchange coupling with and b) injection of non-local spin current originated from a switching ferrimagnet. Here, in this manuscript, exchange mediated HI-AOS of a Ruderman–Kittel–Kasuya–Yosida (RKKY) exchange coupled “[Co/Pt]-multilayers/Pt spacer/CoGd” heterostructure is demonstrated. The authors have measured layer-resolved static magnetic properties, single-shot HI-AOS, and magnetization dynamics of the ferromagnetic Co/Pt multilayers (MLs), that are ferromagnetically or antiferromagnetically coupled with ferrimagnetic CoGd layers. Time-resolved magnetization dynamics reveal a 3.5 ps switching time of the Co/Pt MLs, which is the fastest switching of a ferromagnet reported to date. Employing an extended microscopic three-temperature model, the temporal dynamics of the exchange coupled ferromagnet–ferrimagnet heterostructure are simulated, qualitatively and quantitatively explaining the experimental switching phenomena. This work experimentally as well as theoretically establishes the mechanism of exchange mediated all-optical switching of ferromagnet-ferrimagnet heterostructures, which can be integrated with a magnetic tunnel junction for efficient reading after ultrafast energy-efficient switching.
36 MATERIALS SCIENCE↗
The Astromag superconducting magnet facility configured for a free-flying satellite
The magnet parameters of a free-flying version of Astromag and the parameters of the space cryogenic system for the magnet are presented. Consideration is given to the free-flyer version of the Astromag magnet. The diameter of the magnet, its cryostat, the satellite and the two instruments is limited by the 4.27-m shroud diameter of the Atlas IIa. The magnet coil must use a stable reliable superconductor which can carry the full magnet current at 4.2 K at a peak induction in the coil of 7.5 T. The magnet must operate in the persistent mode. The changes in the overall design and operating requirements for the free-flying-design Astromag suggest that the coils, the cryogenic system, and the charging system can be simplified without a loss of required magnet function. Attention is given to switches, trim coils, and plumbing in the low field region between the coils; the magnet charging system and the quench protection system; and cooled helium supply to the magnet gas-cooled electrical leads.
Green, M. A.↗
Tension-free Dirac strings and steered magnetic charges in 3D artificial spin ice
3D nano-architectures presents a new paradigm in modern condensed matter physics with numerous applications in photonics, biomedicine, and spintronics. They are promising for the realization of 3D magnetic nano-networks for ultra-fast and low-energy data storage. Frustration in these systems can lead to magnetic charges or magnetic monopoles, which can function as mobile, binary information carriers. However, Dirac strings in 2D artificial spin ices bind magnetic charges, while 3D dipolar counterparts require cryogenic temperatures for their stability. Here, we present a micromagnetic study of a highly frustrated 3D artificial spin ice harboring tension-free Dirac strings with unbound magnetic charges at room temperature. We use micromagnetic simulations to demonstrate that the mobility threshold for magnetic charges is by 2 eV lower than their unbinding energy. By applying global magnetic fields, we steer magnetic charges in a given direction omitting unintended switchings. The introduced system paves the way toward 3D magnetic networks for data transport and storage.
36 MATERIALS SCIENCE↗
Probing the electronic structure of buried interfaces via resonant scattering methods
Devices such as next-generation magnetic read heads demand energy storage capabilities and switching times beyond what is met by current permanent magnets. Superlattices of soft and hard ferromagnets (FM) that exhibit exchange-spring coupling are well-suited to be optimized for this purpose. Because of perovskites’ tunable properties from competing charge and spin degrees of freedom, one such system of interest is (001)-oriented La 0.7 Sr 0.3 CoO 3 (LSCO) capped with La 0.7 Sr 0.3 MnO 3 (LSMO). In the interfacial layers, FM moments are exchange-coupled strongly to each other, increasing overall coercivity. However, this system has subtleties that cannot be teased out in simple spin orientation models. In particular, growth mechanisms lead to rough interfaces and interlayer diffusion, which may drive a poorly understood phenomenon. The LSCO interfaces exhibit distinct magnetic properties from the bulk, possibly owing to an unexpected Co 2+ oxidation state near the LSMO that could lead to superexchange with Mn 4+ or possibly antiferromagnetism. Therefore the characterization of the electronic structure of interfaces is crucial to our understanding of the magnetic structure, but this is impossible with surface techniques, since most interfaces are buried, as well as spectroscopy, because the layers are similar in density. Specular x-ray reflectivity (SXR) is one method that describes layer thickness, density, and out-of-plane interface roughness of surfaces and buried interfaces. To characterize further, we apply SXR over absorption edges to increase Co/Mn contrast. Back-conversion to x-ray absorption near-edge structure (XANES) provides spectroscopic information on oxidation states that considers each sublayer separately, thereby determining how the sublayers couple.
36 MATERIALS SCIENCE↗
Saturn switch selector. phase ii- completion report
Saturn switch selector - breadboard containing logic circuitry, magnetic core input register, steady state register, and three representative decode and output channels
SWITCHING CIRCUIT↗
Spin switchable optical phenomena in Rashba band structures through intersystem crossing in momentum space in solution-processing 2D-superlattice perovskite film
Spin-switchable phenomena are a critical element for the development of spintronic and chiroptic devices. Herein we combine a 2D-superlattice perovskite (4,4-DFPD2PbI4) film with a ferromagnetic cobalt (Co) layer to form a multiferroic perovskite/Co interface, and demonstrate spin-switchable circularly polarized luminescence (CPL) between right-handed σ+ and left-handed σ− polarizations. When the ferromagnetic spins of Co at the Co/perovskite interface are altered between positive and negative magnetic field directions, the CPL from the 2D-superlattice perovskite switches from σ+ to σ− polarization. The magnetic field effects present a unique method to confirm that CPL is generated by the circular-orbital momentum of light-emitting excitons within Rashba band structures, eliminating artifacts involving structural birefringence. Our polarized neutron reflectometry measurements confirm a super long-range spin-orbit interaction occurring in the 2D-superlattice perovskite films. The temperature dependence of spin-switchable phenomenon indicates an extraordinarily long orbital polarization lifetime, reaching microseconds at room temperature and milliseconds at 5 K.
36 MATERIALS SCIENCE↗
High-power microstrip switch
Switch, which uses only two p-i-n diodes on microstrip substrate, has been developed for application in spacecraft radio systems. Switch features improved power drain, weight, volume, magnetic cleanliness, and reliability, over currently-used circulator and electromechanical switches.
Choi, S. D.↗
Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction memory elements can be used for computation by manipulating a domain wall, a transition region between magnetic domains, but the experimental study of such devices has been limited by high current densities and low tunnel magnetoresistance. Here, we study prototypes of three-terminal domain wall-magnetic tunnel junction in-memory computing devices that can address data processing bottlenecks and resolve these challenges by using perpendicular magnetic anisotropy, spin–orbit torque switching, and an optimized lithography process to produce average device tunnel magnetoresistance TMR = 171% and average resistance-area product RA = 29 Ω μm2, close to the RA of the unpatterned film. Device initialization variation in switching voltage is shown to be curtailed to 7%–10% by controlling the domain wall initial position, which we show corresponds to 90%–96% accuracy in a domain wall-magnetic tunnel junction full adder simulation. Repeatability of writing and resetting the device is shown. A circuit shows an inverter operation between two devices, showing that a voltage window is large enough, compared to the variation noise, to repeatably operate a domain wall-magnetic tunnel junction circuit. These results make strides in using magnetic tunnel junctions and domain walls for in-memory and neuromorphic computing applications.
Alamdar, Mahshid (ORCID:0000000221732935)↗
Switching efficiency improvement in spin torque majority gates
Spin torque majority gate (STMG) is one of the promising options for beyond complementary metal-oxide-semiconductor logic. Improvement of its performance—switching speed vs. required current—is critical for its competitiveness. In this paper, (a) we identify an optimized layout of the gate comprised of thin magnetic wires with in-plane magnetization; (b) we optimize geometries of perpendicular magnetization spin torque majority gates. Micromagnetic simulations demonstrate an improvement in switching current for in-plane magnetization (with less than 1 ns switching time) from 6 mA in the original scheme to 1.5 mA in the present one. Additionally, failures of switching caused by vortex formation are eliminated and desired output magnetization is achieved. Various geometries of STMG with perpendicular magnetization are explored. The scheme with a straight cross proves to be the most advantageous. It is predicted to operate with the switching current of 50 μA and less than 4 ns switching time.
36 MATERIALS SCIENCE↗