Radiation effects in silicon solar cells Quarterly report
Electron spin resonance analysis on divacancy production and annealing in silicon solar cells after electron irradiation
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Electron spin resonance analysis on divacancy production and annealing in silicon solar cells after electron irradiation
Unquantized field calculations extended to include atomic field effect on atom, predicting spontaneous decay rate from excited state and light frequency time dependence
Stored particle track studies in terrestrial meteorites and minerals for lunar rock identification
Large area proton beams established in energy range from 31 to 225 MeV
Effect of lithium on production and annealing of damage in silicon
Density gradient sedimentation of Escherichia coli populations irradiated with Co 60 gamma rays, showing correlation between DNA degradation and cell death
Proton and electron irradiation producing oxygen vacancies in silicates, minerals and rocks, indicating similar processes in lunar surface materials erosion and transport
Calcium tungstate crystals, investigating electron paramagnetic resonance centers produced by neutrons and gamma rays to obtain information on lattice vacancies, defects, etc
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Infrared spectroscopic and photoconductivity determinations of electron irradiation effects in Li-doped floating zone and crucible grown silicon
High energy electron irradiation effects on field effect transistors in integrated circuit devices
Clear potting polymers, investigating temperature and ionizing particle irradiation effects on properties
Spacecraft sterilization by microbial inactivation, comparing thermoradiation and dry heat methods
Study of the introduction and annealing of defects produced in lithium-diffused float-zone n-type silicon by 30-MeV electrons and fission neutrons. The introduction rate of recombination centers produced by electron irradiation is dependent on lithium concentration and for neutron irradiation is independent of lithium concentration. The introduction rate of Si-B1 centers also depends on the lithium concentration. The annealing of electron- and neutron-produced recombination centers, Si-B1 centers, and Si-G7 centers in lithium-diffused silicon occurs at much lower temperatures than in nondiffused material.
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A radiometric measuring system is described for observing solar activity, atmospheric attenuation, and atmospheric emission. Two highly directional microwave antennas are mounted side by-side on an equatorial mount which tracks the sun. One antenna is aimed directly at the sun to provide a sun temperature, and the other antenna is aimed at a slight angle to the sun antenna to provide a sky temperature reference. Signals from the two antennas are compared in a radiometric detecting system and provide information concerning solar activity and atmospheric attenuation and emission.
The most detailed and comprehensively verified analytical model was used to evaluate the effects of simplifying assumptions on the accuracy of predictions made by the external damage coefficient method. It was found that the most serious discrepancies were present in heavily damaged cells, particularly proton damaged cells, in which a gradient in damage across the cell existed. In general, it was found that the current damage coefficient method tends to underestimate damage at high fluences. An exception to this rule was thick cover-slipped cells experiencing heavy degradation due to omnidirectional electrons. In such cases, the damage coefficient method overestimates the damage. Comparisons of degradation predictions made by the two methods and measured flight data confirmed the above findings.