Search NASA⌕ Search

SEARCH · Search NASA

Results for “Sampling device”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Kondo interaction of quantum spin Hall edge channels with charge puddles

Under time-reversal symmetry, quantum spin Hall edge channels are protected against elastic backscattering. However, even for samples which exhibit conductance quantization due to the quantum spin Hall effect, reproducible fluctuations shape the quantization plateau when the chemical potential is tuned through the bulk gap. Here, we examine those fluctuations in micron-sized HgTe quantum well devices. By performing temperature- and gate-dependent measurements, we conclude that “charge puddles” in the narrow-gap material have a Kondo-type interaction with the edge channels resulting in the observed conductance fluctuations. Our results provide insight into the underlying mechanisms of scattering in quantum spin Hall edge channels.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Confinement-Induced Chiral Edge Channel Interaction in Quantum Anomalous Hall Insulators

In quantum anomalous Hall (QAH) insulators, the interior is insulating but electrons can travel with zero resistance along one-dimensional (1D) conducting paths known as chiral edge channels (CECs). These CECs have been predicted to be confined to the 1D edges and exponentially decay in the two-dimensional (2D) bulk. Here, in this Letter, we present the results of a systematic study of QAH devices fashioned in a Hall bar geometry of different widths under gate voltages. At the charge neutral point, the QAH effect persists in a Hall bar device with a width of only ~7⁢2 nm, implying the intrinsic decaying length of CECs is less than ~3⁢6 nm. In the electron-doped regime, we find that the Hall resistance deviates quickly from the quantized value when the sample width is less than 1 μ⁢m. Our theoretical calculations suggest that the wave function of CEC first decays exponentially and then shows a long tail due to disorder-induced bulk states. Therefore, the deviation from the quantized Hall resistance in narrow QAH samples originates from the interaction between two opposite CECs mediated by disorder-induced bulk states in QAH insulators, consistent with our experimental observations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

A composite electrodynamic mechanism to reconcile spatiotemporally resolved exciton transport in quantum dot superlattices

Quantum dot (QD) solids are promising optoelectronic materials; further advancing their device functionality requires understanding their energy transport mechanisms. The commonly invoked near-field Förster resonance energy transfer (FRET) theory often underestimates the exciton hopping rate in QD solids, yet no consensus exists on the underlying cause. In response, we use time-resolved ultrafast stimulated emission depletion (STED) microscopy, an ultrafast transformation of STED to spatiotemporally resolve exciton diffusion in tellurium-doped cadmium selenide–core/cadmium sulfide–shell QD superlattices. We measure the concomitant time-resolved exciton energy decay due to excitons sampling a heterogeneous energetic landscape within the superlattice. The heterogeneity is quantified by single-particle emission spectroscopy. This powerful multimodal set of observables provides sufficient constraints on a kinetic Monte Carlo simulation of exciton transport to elucidate a composite transport mechanism that includes both near-field FRET and previously neglected far-field emission/reabsorption contributions. Uncovering this mechanism offers a much-needed unified framework in which to characterize transport in QD solids and additional principles for device design.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Comparison of the dielectric and magnetocaloric properties of bulk and film of GdFe 0.5 Cr 0.5 O 3

Here, we report a comparison of the magnetic, magnetocaloric, and dielectric properties of 50% iron substituted GdCrO 3 (GdFe 0.5 Cr 0.5 O 3 ) bulk pellet and 960 nm thick film of GdFe 0.5 Cr 0.5 O 3 (GFCO). The 960 nm film was synthesized on a platinized-silicon substrate by chem. soln. deposition and spin-coating methods. The X-ray diffraction scans of the bulk sample and the film as well as the morphology of the film as examined by the field-emission scanning electron microscope indicate phase-pure and polycrystalline nature of these samples. XPS was used to deermine the valence states of Gd, Fe, and Cr. The temp. dependence of the dielectric const. from 225 to 700 K shows peaks at T C = 525 K for the bulk and ≈450 K for the film due to ferroelectric to paraelectric transitions, since elec. polarization vs elec. field hysteresis loops are observed. at room temp. The dielectric studies in the bulk GFCO for T > T C indicate a relaxor-like behavior. The measurements of the magnetization (M) of the samples as a function of temp. (5-350 K) and magnetic field (H) up to 7 T (=70 kOe) depict hysteresis behavior at low temps. due to the canted antiferromagnetic order of Fe 3+ /Cr 3+ below the Néel temp. of ≈275 K. The M vs H isotherms at various temps. are used to det. and compare the magnetic entropy change (-ΔS) and relative cooling power (RCP) of the two samples, yielding (-ΔS) = 30.7 J/kg K (18.8 J/kg K) and RCP = 566.5 J/kg (375 J/kg) for the bulk (960 nm film) samples of GFCO at 7 K and 7 T, resp. The plot of RCP vs T shows that magnetic cooling for this system is most effective for T < 30 K. Comparatively smaller magnitudes of (-ΔS) and RCP for the film vis-a-vis the bulk sample of GFCO scale with its reduced magnetization. This suggests that further improvements in the quality of the films are needed to improve their magnetization and hence their magnetocaloric properties, possibly making them useful for on-chip cooling in miniaturized devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Unveiling defect-mediated carrier dynamics in monolayer semiconductors by spatiotemporal microwave imaging

The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects can lead to an enhanced photoconduction, a complicated process involving charge generation and recombination in the time domain and carrier transport in the spatial domain. Here, we report the simultaneous spatial and temporal photoconductivity imaging in two types of WS 2 monolayers by laser-illuminated microwave impedance microscopy. The diffusion length and carrier lifetime were directly extracted from the spatial profile and temporal relaxation of microwave signals, respectively. Time-resolved experiments indicate that the critical process for photoexcited carriers is the escape of holes from trap states, which prolongs the apparent lifetime of mobile electrons in the conduction band. As a result, counterintuitively, the long-lived photoconductivity signal is higher in chemical-vapor deposited (CVD) samples than exfoliated monolayers due to the presence of traps that inhibits recombination. Overall, our work reveals the intrinsic time and length scales of electrical response to photoexcitation in van der Waals materials, which is essential for their applications in optoelectronic devices.

42 ENGINEERING↗
DOE OSTI2023

Identifying native point defect configurations in α-alumina

Intimately intertwined atomic and electronic structures of point defects govern diffusion-limited corrosion and underpin the operation of optoelectronic devices. For some materials, complex energy landscapes containing metastable defect configurations challenge first-principles modeling efforts. Here, we thoroughly reevaluate native point defect geometries for the illustrative case of α-Al 2 O 3 by comparing three methods for sampling candidate geometries in density functional theory calculations: displacing atoms near a naively placed defect, initializing interstitials at high-symmetry points of a Voronoi decomposition, and Bayesian optimization. We find symmetry-breaking distortions for oxygen vacancies in some charge states, and we identify several distinct oxygen split-interstitial geometries that help explain literature discrepancies involving this defect. We also report a surprising and, to our knowledge, previously unknown trigonal geometry favored by aluminum interstitials in some charge states. Importantly, these new configurations may have transformative impacts on our understanding of defect migration pathways in aluminum-oxide scales protecting metal alloys from corrosion. Overall, the Voronoi scheme appears most effective for sampling candidate interstitial sites because it always succeeded in finding the lowest-energy geometry identified in this study, although no approach found every metastable configuration. Finally, we show that the position of defect levels within the band gap can depend strongly on the defect geometry, underscoring the need to conduct careful searches for ground-state geometries in defect calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Intricate short-range order in GeSn alloys revealed by atomistic simulations with highly accurate and efficient machine-learning potentials

GeSn alloys hold promise for silicon-compatible integrated applications in electronics, photonics, and topological quantum devices. However, understanding their intricate structures using density functional theory (DFT) calculations is hindered by spatiotemporal constraints. To overcome this limitation, we develop highly accurate and efficient machine-learning interatomic potentials based on a neuroevolution potential approach with farthest point sampling on a comprehensive DFT data set. The application of the developed machine-learning potential in large-scale atomistic simulations bridges the spatiotemporal gap between modeling and advanced characterizations, and facilitates the discovery of structural intricacies in GeSn alloys. Through extensive statistical sampling, we identify a type of short-range order (SRO) that is distinguished by both its structural signature and electronic band gap from the SRO structure previously predicted. Modeling based on a large simulation cell reveals the coexistence of nano SRO domains with various degrees of ordering, demonstrating a complex spatial heterogeneity of SRO structure. Finally, our study not only reinforces the significance of fine-level structural information in alloys, but it also constitutes an effective framework for exploring SRO in a broad range of complex alloys based on highly accurate and effective machine-learning potentials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Mitigation of Boiling-Induced Thermal Degradation Using Microporous Nickel Inverse Opals Structures

Engineered microporous structures have received much attention in high-heat-flux electronics cooling due to their high thermal conductivity and permeability, and large surface area for heat transfer, but are susceptible to boiling-induced thermal degradation. Here, this study investigates the efficacy of nickel inverse opals (NiIOs) in mitigating structural degradation caused by corrosion-assisted erosion during pool boiling with water as the working fluid. First, we compared the reliability of NiIOs to copper inverse opals (CuIOs) for a 3-day pool boiling test at constant heat flux. The NiIOs demonstrated superior resistance to thermal degradation due to their inherent corrosion resistance and mechanical strength. Subsequently, we conducted a more controlled experiment to show the effect of heat flux on the degradation of the NiIOs while excluding the effect of temperature variations. Pool boiling tests of 20-μm-thickness NiIOs covering an area of ∼11 × 11 mm 2 with a 2.5 × 2.5 mm 2 heater at the center were conducted at heat flux levels of 20%, 40%, and 60% of the critical heat flux (CHF) for 3 days. The NiIOs subjected to heat flux levels of 20% and 40% CHF showed minimal degradation, while the sample subjected to 60% CHF showed erosion on the top surface due to higher bubble formation and departure rate. These results show the potential of NiIOs as a promising solution for long-term thermal management in high-power electronic devices, although design considerations for maximum allowable heat flux are necessary for reliable operation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Improving the characterization of fusion in a MuSIC detector by spatial localization

Multi-Sampling Ionization Chambers (MuSIC) provide an efficient means of measuring nuclear reactions with low beam rates (< 10 6 pps). However, in comparison to thin-target measurements, prior measurements using MuSIC detectors all manifest fusion excitation functions with wide error bars in the energy dimension. This uncertainty limits the applicability of these devices in measuring near and sub-barrier fusion cross-sections. Key to overcoming this limitation is spatial localization of the fusion in the detector. By comparing the measured ionization in the MuSIC detector with accurate energy loss calculations the position of the fusion in the detector is determined. The analysis not only provides the desired improvement in energy resolution, but it also allows extraction of the atomic number of the evaporation residues following fusion. Furthermore, the effectiveness of this approach is demonstrated for 18 O+ 12 C measured with MuSIC@Indiana.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Encapsulating High–Temperature Superconducting Twisted van der Waals Heterostructures Blocks Detrimental Effects of Disorder

High-temperature cuprate superconductors based van der Waals (vdW) heterostructures hold high technological promise. One of the obstacles hindering their progress is the detrimental effect of disorder on the properties of the vdW-devices-based Josephson junctions (JJs). Here, a new method of fabricating twisted vdW heterostructures made of Bi 2 Sr 2 CuCa 2 O 8+δ , crucially improving the JJ characteristics and pushing them up to those of the intrinsic JJs in bulk samples, is reported. The method combines cryogenic stacking using a solvent-free stencil mask technique and covering the interface by insulating hexagonal boron nitride crystals. Despite the high-vacuum condition down to 10 –6 mbar in the evaporation chamber, the interface appears to be protected from water molecules during the in situ metal deposition only when fully encapsulated. Comparing the current-voltage curves of encapsulated and unencapsulated interfaces, it is revealed that the encapsulated interfaces' characteristics are crucially improved, so that the corresponding JJs demonstrate high critical currents and sharpness of the superconducting transition comparable to those of the intrinsic JJs. Finally, it is shown that the encapsulated heterostructures are more stable over time.

2D materials↗
DOE OSTI2026

2010-2012 California Household Travel Survey

The 2010-2012 California Household Travel Survey (CHTS) was administered by the California Department of Transportation, which collected demographic and travel behavior characteristics for residents across the entire state. At the time, it was the largest such regional or statewide survey ever conducted in the United States. Detailed travel behavior information was obtained from more than 42,500 households via multiple data-collection methods, including computer-assisted telephone interviewing, online and mail surveys, wearable (7,574 participants) and in-vehicle (2,910 vehicles) global positioning system devices, and on-board diagnostic sensors that gathered data directly from a vehicle's engine. Details of personal travel behavior were gathered within the region of residence, inter-regionally within the state, and in adjoining states and Mexico. The survey sampling plan was designed to ensure an accurate representation of the entire population of the state. The CHTS included additional features, such as vehicle-acquisition decisions, parking choices, work schedules and flexibility, use of toll lanes/priced facilities, and walk and bicycle trips, to support advanced model development.

1Hz data↗
DOE OSTI2022

HPC Molecular Simulation Tries Out a New GPU: Experiences on Early AMD Test Systems for the Frontier Supercomputer

Molecular simulation is an important tool for nu- merous efforts in physics, chemistry, and the biological sciences. Simulating molecular dynamics requires extremely rapid cal- culations to enable sufficient sampling of simulated temporal molecular processes. The Hewlett Packard Enterprise (HPE) Cray EX Frontier supercomputer installed at the Oak Ridge Leadership Computing Facility (OLCF) will provide an exascale resource for open science, and will feature graphics processing units (GPUs) from Advanced Micro Devices (AMD). The future LUMI supercomputer in Finland will be based on an HPE Cray EX platform as well. Here we test the ports of several widely used molecular dynamics packages that have each made substantial use of acceleration with NVIDIA GPUs, on Spock, the early Cray pre-Frontier testbed system at the OLCF which employs AMD GPUs. These programs are used extensively in industry for pharmaceutical and materials research, as well as academia, and are also frequently deployed on high-performance computing (HPC) systems, including national leadership HPC resources. We find that in general, performance is competitive and installation is straightforward, even at these early stages in a new GPU ecosystem. Our experiences point to an expanding arena for GPU vendors in HPC for molecular simulation.

Sedova, Ada↗
DOE OSTI2020

Geometrically Tunable Beamed Light Emission from a Quantum‐Dot Ensemble Near a Gradient Metasurface

Abstract Optical metasurfaces have been widely investigated in recent years as a means to tailor the wavefronts of externally incident light for passive device applications. At the same time, their use in active optoelectronic devices such as light emitters is far less established. This work explores their ability to control the radiation properties of a nearby continuous ensemble of randomly oriented incoherent dipole sources via near‐field interactions. Specifically, a film of colloidal quantum dots is deposited on a plasmonic metasurface consisting of a 1D array of metallic nanoantennas on a metal film. The array is designed to introduce a linear phase profile upon reflection, and a bi‐periodic nanoparticle arrangement is introduced to ensure adequate sampling of the desired phase gradient. Highly directional radiation patterns are correspondingly obtained from the quantum dots at an enhanced emission rate. The underlying radiation mechanism involves the near‐field excitation of surface plasmon polaritons at the metal film, and their selective diffractive scattering by the metasurface into well‐collimated beams along predetermined geometrically tunable directions. These results underscore the distinctive ability of metasurfaces to control radiation properties directly at the source level, which is technologically significant for the continued miniaturization and large‐scale integration of optoelectronic devices.

Wang, Xiaowei↗
DOE OSTI2020

Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

Unintentional impurity incorporation in GaN drift layers represents a challenging issue that can limit their potential performance in vertical power devices. In this paper, we focus on studying the origins of Fe impurity incorporation in metal-organic chemical vapor deposition (MOCVD) grown GaN materials. Acting as a compensator in n-type GaN drift layers, Fe impurities can reduce the electron mobility in GaN and limit the lowest controllable doping level. Two sources, the sample cleaning process and growth susceptor, were identified as the main mechanisms of Fe incorporation in the MOCVD GaN growth process. It was found that solvent cleaning of the wafer can introduce significant Fe contamination at the growth interface, which would slowly be incorporated into the GaN epilayer, thus causing background Fe impurity as high as 10 17 cm -3 level. Moreover, the Fe impurity in the coating material on the susceptor can introduce additional Fe impurity during the growth process. Our studies revealed that the Fe impurity level could be significantly suppressed by more than two orders when an alternative cleaning process was used and the susceptor surface was fully covered by substrates. Characterization of the Fe impurity concentrations was performed via secondary ion mass spectrometry. The trap level (E C - 0.57) eV from deep-level transient spectroscopy that had previously been attributed to Fe confirmed the carrier compensation effect from Fe. Room temperature Hall mobility as high as 1007 cm 2 /V s was achieved on the MOCVD grown low-Fe GaN. Results from this work will provide guidance for achieving high purity GaN toward high performance GaN vertical power devices.

42 ENGINEERING↗
DOE OSTI2022

Focused Ion Beam Preparation of Low Melting Point Metals: Lessons Learned From Indium

Indium (In) and other low melting point metals are used as interconnects in a variety of hybridized circuits and a full understanding of the metallurgy of these interconnects is important to the reliability and performance of the devices. Here, this paper shows that room temperature focused ion beam (FIB) preparation of cross-sections, using Ga + or Xe + can result in artifacts that obscure the true In microbump structure. The use of modified milling strategies to minimize the increased local sample temperature are shown to produce cross-sections that are representative of the In bump microstructure in some sample configurations. Furthermore, cooling of the sample to cryogenic temperatures is shown to reliably eliminate artifacts in FIB prepared cross-sections of In bumps allowing the true bump microstructure to be observed.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Bismuth in Lead–Tin Alloy Perovskites: Effect on Material Properties and Photovoltaic Device Performance

Metal halide perovskites (MHPs) have a strong potential for optoelectronic applications, especially photovoltaics. A significant advantage offered by MHPs is their bandgap tunability via chemical substitution and alloying, with lead–tin alloys producing the narrowest reported bandgaps of ~1.2 eV. Efforts to further narrow the bandgap of MHPs by alloying in other elements, such as bismuth, have largely been unsuccessful due to the introduction of defective electronic states, which severely diminish electronic quality. Here, in this study, we examine the effects of bismuth on a lead–tin alloyed MHP, motivated by the narrow bandgap of alloyed lead–tin MHPs. We find that the defect screening observed in lead–tin MHPs is not sufficient to screen the defect level introduced by bismuth, as evidenced by quenched photoluminescence, decreased mobility, and severely reduced performance in a photovoltaic device. Density functional theory calculations suggest that midgap states are introduced by bismuth addition over a range of chemical and compositional conditions. We further observe through wavelength-dependent photoconductivity that free carriers are generated out to ~0.9 eV in bismuth-containing samples, which could be of potential interest for NIR photodetection.

14 SOLAR ENERGY↗