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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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A very flexible substrate for printed wiring is disclosed which is composed of a blend of phenoxy resin-polyisocyanate-brominated epoxy resin in which the equivalent ration of the functional groups is hydroxyl grouped: isocyanate group: epoxy group = 1:0.2 to 2:0.5 to 3. The product has outstanding solder resistance and is applied to metal without using adhesives.
Work directed toward understanding the high pressure properties of molecular solids and molecular surfaces deposited on hetrogeneous substrates is reported. The motivation, apart from expanding our basic knowledge about these systems, was to understand and predict the properties of new materials synthesized at high pressure, including pressure induced metallic and superconducting states. As a consequence, information about the states of matter of the Jovian planets and their satellites, which are natural high pressure laboratories was also provided. The work on molecular surfaces and finite two and three dimensional clusters of atoms and molecules was connected with the composition and behavior of planetary atmospheres and on the processes involved in forming surface layers, which is vital to the development of composite materials and microcircuitry.
Etched metallic conductor lines on metal clad polymeric substrates are used for electronic component interconnections. Significant signal losses are observed for microstrip conductor lines used for interconnecting high frequency devices. At these frequencies, the electronic signal travels closer to the metal-polymer interface due to the skin effect. Copper-teflon interfaces were characterized by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) to determine the interfacial properties. Data relating roughness of the copper film to signal losses was compared to theory. Films used to enhance adhesion are found, to contribute to these losses.
Dispersion and loss characteristics of microstrip lines on 10 mil and 31 mil electrodeposited and electroless copper clad-Teflon substrates were experimentally obtained from 2 to 40 GHz. The roles of surface roughness and radiation in total loss were examined.
New and improved Ni-, Co-, and Fe-base bond coatings have been identified for the ZrO2-Y2O3 thermal barrier coatings to be used on NI-, Co-, and Fe-base alloy substrates. These bond coatings were evaluated in a cyclic furnace between 1120 and 1175 C. It was found that MCrAlYb (where M = Ni, Co, or Fe) bond coating thermal barrier systems. The longest life was obtained with the FeCrAlYb thermal barrier system followed by NiCrAlYb and CoCrAlYb thermal barrier systems in that order.
The printed dipole or slot antenna on a semi-infinite substrate and infinite phased arrays of these elements are investigated. The solution is based on the moment method in the Fourier transform domain. The generalized impedance or admittance matrix can be expressed in rapidly converging infinite-integral or infinite-summation forms, allowing the accurate determination of the current distributions. Using the present formulation, the input impedance, resonant length, and radiation pattern for the isolated antennas, and the reflection coefficient for infinite phased arrays, are calculated.
A spectral-domain Galerkin method is used to calculate the dispersion characteristics of wide slotlines on low-permittivity substrates that are electrically thin. The range of parameters covered are d/lambda sub 0 = 0.006-0.06, W/lambda sub 0 = 0.005-2.0, and epsilon sub r = 2.22, 3.0, 3.8, and 9.8. The choice of expansion and testing functions makes possible the extraction of the asymptotic form of the infinite integrals, resulting in a computationally efficient solution. The agreement between calculated and measured slot wavelengths on narrow and wide slots is generally within 2.0 percent over 2-6 GHz.
Refractory metallic coatings of (W/0.6/ Re/0.4/)76B24 (WReB) have been deposited onto glass, quartz, and heat-treated AISI 52100 bearing steel substrates by dc magnetron sputtering. As-deposited WReB films are amorphous, as shown by their diffuse X-ray diffraction patterns; chemically homogeneous, according to secondary ion mass spectrometry (SIMS) analysis; and they exhibit a very high (approximately 1000 C) crystallization temperature. Adhesion strength of these coatings on heat-treated AISI 52100 steel is in excess of approximately 20,000 psi and they possess high microhardness (approximately 2400 HV50). Unlubricated wear resistance of such hard and adherent amorphous metallic coatings on AISI 52100 steel is studied using the pin-on-disc method under various loading conditions. Amorphous metallic WReB coatings, about 4 microns thick, exhibit an improvement of more than two and a half orders of magnitude in the unlubricated wear resistance over that of the uncoated AISI 52100 steel.
The resistance of copper and TiN coatings on various bearing substrates to high-load rolling contact fatigue (RCF) is investigated. Special attention is given to the lubricating characteristics of copper deposited by ion plating, and the wear resistant characteristics of TiN deposited by ion plating and magnetron sputtering techniques. RCF samples of 440C and AMS 5749 bearing steels were coated. Sputter deposited and ion plated films were on the RCF samples in a range of thickness from about 2000 A to 2 microns. Results showed a marked improvement of the RCF for pure copper tested on 440C, but a degradation for copper on AMS 5749. It is also found that the 2000 A TiN films behave favorably on the 440C and AMS 5749 bearing steels at RCF stress levels of 786 ksi. Scanning electron microscopy, X-ray diffraction, and electron spectroscopy for chemical analysis were used during the investigation.
New and improved Ni-, Co-, and Fe-base bond coatings have been identified for the ZrO2-Y2O3 thermal barrier coatings to be used on Ni-, Co-, and Fe-base alloy substrates. These bond coatings were evaluated in a cyclic furnace between 1120 and 1175 C. It was found that MCrAlYb (where M = Ni, Co, or Fe) bond coating thermal barrier systems have significantly longer lives than MCrAlY bond coating thermal barrier systems. The longest life was obtained with the FeCrAlYb thermal barrier system followed by NiCrAlYb and CoCrAlYb thermal barrier systems in that order.
Rapid thermal processing (RTP) of Czochralski (Cz) silicon substrates is discussed with its attendant effects on defects, denuded zones, and minority carrier lifetime. Preferential chemical etching and X-ray topography was used to delineate defects which were subsequently correlated with minority carrier lifetime; determined by a pulse metallo-organic decompositon (MOD) test device. The X-ray delineation of grown-in defects was enhanced by a lithium decoration procedure. Results, thus far, show excellent correlation between process-induced defects.
The fabrication of arrays of channeled-substrate-planar (CSP) AlGaAs diode lasers which emit up to 150 mW CW in a single spatial mode and are applicable to mulitchannel optical recording systems is described. The CSP diode lasers are incorporated in ten-array geometry, and each array is 1.95 nm in width and 100 microns in thickness and is cleaved to have a cavity length of 200 microns and coated to produce 90-percent reflectivity on the back facet and 10-percent reflectivity on the front facet. The array is attached to a thermoelectrically cooled submount. The optical output power versus input current characteristics for the array are evaluated, and the lateral far-field intensity profiles for each of the lasers (at 30 mW CW) and CW spectra of the lasers are analyzed.
An overview of measurement techniques for millimeter wave substrate mounted antennas is presented. Scattering and pickup of the millimeter wave radiation on the low frequency leads is a significant problem in these measurements. Methods to reduce these effects are discussed, and preliminary work on dipole antennas at 230 GHz is presented.
A transmission electron microscopy study is being conducted on the microstructure of beta-SiC films grown epitaxially on 001-plane silicon by chemical vapor deposition. Observations have been made in plain view and in cross-section. A high density of stacking faults has been found in the bulk of the epilayer which are bounded by partials of the Shockley type with Burgers vectors 1/6 211-line. Cross-sectional high resolution electron microscopy of the interface has shown it to be semicoherent with misfit dislocations to accommodate the lattice parameter difference between the substrate and the epilayer. In addition to misfit dislocations, a high density of twins and some stacking faults are present in the SiC near the interface. Mechanisms for the nucleation and growth of these defects are discussed.
An experimental evaluation of apparent thermal strains is conducted using various combinations of substrate/gauge/attachment structure and redundant high temperature extensometry. It is found that the extensometry could either confirm independent measurements of the substrate's thermal expansion, or quantify nonzero mechanical strains resulting from uncertain material behavior and boundary conditions. Apparent strain and thermal expansion behavior data can then be used to modify the raw strain measurements in order to determine either stress producing or total strains. Limitation of the correction procedure for the three selected strain gauges is noted which is due to relatively large gauge/attachment variability.
The optical properties of lattice-matched GaAs/Al(x)Ga(1-x)As and In(y)Ga(1-y)As/GaAs strained-layer superlattices grown on Si substrates have been studied using the photoreflectance technique. These preliminary results show that good quality III-IV epilayers can be grown on Si. The experimental data were compared with calculations based on the envelope-function approximation and fitted to the third-derivative functional form of reflectance modulation theory.
An overview of measurement techniques for millimeter wave substrate mounted antennas is presented. Scattering and pickup of the millimeter wave radiation on the low frequency leads is a significant problem in these measurements. Methods to reduce these effects are discussed, and preliminary work on dipole antennas at 230 GHz is presented.
Channeled-substrate-planar laser diodes from various wafers were observed to develop a node or dark spot in their near-field patterns after failure during lifetesting. 'Node' devices from each wafer were angle-lapped and stained in an attempt to uncover a physical mechanism for this common failure symptom. Optical microscopic examination of the beveled cross sections revealed that an intrusion, in the form of a spike at the tip of the zinc diffusion front, had penetrated into the active layer of these diodes. The node observed in the near-field pattern appears to be in a position correspondig to the location of the spike in the active region. In addition, cathodoluminescence measurements on other 'node' diodes revealed a dark line region approximately 2-micron-wide running parallel to and in the middle of the 5-micron contact stripe. It is believed that this dark line region is representative of an area of nonradiative recombination which occurs in the portion of the active layer containing the intrusion.