Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions
Not provided.
Materials Science↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas
Not provided.
Materials Science↗
Plasma etching of high aspect ratio features in SiO 2 using Ar/C 4 F 8 /O 2 mixtures: A computational investigation
Not provided.
Materials Science↗
Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching
In the Si{sub 3}N{sub 4} layer, coaxial and single submicrometer GaN structures of hexagonal shape with pyramidal facets are formed by selective vapor-phase epitaxy in windows produced with a focused ion beam. It is found that coaxial hexagonal structures are formed during the growth process in ring-shaped mask windows.
36 MATERIALS SCIENCE↗
Tunable hard x-ray nanofocusing with Fresnel zone plates fabricated using deep etching
Not Available
36 MATERIALS SCIENCE↗
Deep-level Optical Spectroscopy in Wet-Treated Etched-and-Regrown Nonpolar m-plane GaN Vertical Schottky Diodes.
Abstract not provided.
Aragon, Andrew↗
Exploring Al(X)Ga(1-X)N Nanostructures Fabricated via Top-Down Chemical Wet Etching.
Abstract not provided.
Kazanowska, Barbara Anna↗
Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid.
Abstract not provided.
Kazanowska, Barbara↗
Exploring Al(X)Ga(1-X)N Nanostructures Fabricated via Chemical Wet Etching.
Abstract not provided.
Kazanowska, Barbara↗
Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes.
Abstract not provided.
Binder, Andrew↗
GaAs(Sb) nanostructures formed by arsenic-induced in-situ etching of III-Sb surfaces.
Abstract not provided.
Addamane, Sadhvikas↗
Analysis of a radiofrequency plasma reactor for etching (Poster).
Abstract not provided.
Fierro, Andrew↗
Adjusting VCSEL wavelength and index by etching and regrowth
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Serkland, Darwin K.↗
XeF2 – A new MOCVD source for removal of surface Si contamination and in-situ etching of GaN for epitaxial regrowth
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Allerman, Andrew A.↗
In-situ MOCVD Etching of GaN using XeF2 for Selective-Area-Epitaxial-Regrowth of p-type GaN for High Voltage PN Diodes
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Allerman, Andrew A.↗
Local droplet etched quantum dots as quantum light sources
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Addamane, Sadhvikas Jayachandra↗
Metasurface Optic Features Using Metal-Assisted Chemical Etching (MACE)
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St. John, Christopher↗