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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Modeling a High-Temperature Electrochemically Driven Water-Gas-Shift Process Using a Mixed-Conducting Membrane without External Electrical Power

This paper develops a model to predict and interpret the performance of an elevated-temperature, electrochemical, membrane-assisted, water-gas-shift process. The process uses separated feed streams of H 2 O and CO to produce separated streams of H 2 and CO 2 , without an external electrical power source. The dense ceramic membrane is mixed ionic-electronic-conducting (MIEC) gadolinium-doped ceria (GDC) and the porous composite electrodes are Ni-YSZ. At elevated temperature, GDC conducts both oxygen ions and small polarons. The present process uses chemical potential to drive the process. Electrochemical oxidation of CO proceeds within the composite anode and H 2 O reduction proceeds within the composite cathode. At high temperature (e.g., T > 700 °C), GDC has significant electronic leakage in the form of a reduced-cerium small polaron, which supports the charge-transfer reactions. In a typical electrolyzer or fuel cell, this leakage is significantly problematic. However, the present process depends on the leakage current to complete the electrochemical circuit. Model development and validation is based on measured material properties and reactor performance. Potential applications include using CO-rich blast-furnace off gases in steel processing, producing separated streams of H 2 and CO 2 .

Zhu, Huayang↗
NASA NTRS1991

Burst annealing of high temperature GaAs solar cells

One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

Brothers, P. R.↗
NASA NTRS1994

Survey of electron and ion bulk flows in the distant magnetotail with the Geotail spacecraft

A histogramic survey is reported for the electron and ion bulk flows in Earth's magnetotail at geocentric radial distances in the range of about 10 to 210 R(sub E) from the Comprehensive Plasma Instrumentation on board the Geotail spacecraft. Specifically the X-components of the bulk flows are examined for high ion temperatures, greater than 5 x 10(exp 6) K, and for the lower ion temperatures. This separation of plasmas provides a reasonably effective criterion for identifying the hot plasmas associated with the plasma sheet and its boundary layers and the colder plasmas found in the magnetotail lobes and magnetopause boundary layer. The survey shows that the distributions of earthward bulk flows of ions and electrons are similar for each of the two temperature regimes, respectively. However, average speeds for the ions and electrons as a function of radial distance are dissimilar in that the electron bulk speeds are greater than those for the ions. All average electron and ion bulk flows are directed tailward at geocentric radial distances greater than 30 R(sub E). The most striking dissimilarity in the occurrence frequencies of the bulk flows is the large number with high tailward speeds for the electrons, greater than 500 km/s, relative to those for the ions. It is found that the disparity in bulk flows is due to the presence of two ion velocity distributions, one with high temperatures and a bulk speed similar to that of the electrons and the second, colder distribution with higher number density and considerably lesser bulk flow speed.

Frank, L. A.↗
NASA NTRS2011

Cryogenic Behavior of the High Temperature Crystal Oscillator PX-570

Microprocessors, data-acquisition systems, and electronic controllers usually require timing signals for proper and accurate operation. These signals are, in most cases, provided by circuits that utilize crystal oscillators due to availability, cost, ease of operation, and accuracy. Stability of these oscillators, i.e. crystal characteristics, is usually governed, amongst other things, by the ambient temperature. Operation of these devices under extreme temperatures requires, therefore, the implementation of some temperature-compensation mechanism either through the manufacturing process of the oscillator part or in the design of the circuit to maintain stability as well as accuracy. NASA future missions into deep space and planetary exploration necessitate operation of electronic instruments and systems in environments where extreme temperatures along with wide-range thermal swings are countered. Most of the commercial devices are very limited in terms of their specified operational temperature while very few custom-made and military-grade parts have the ability to operate in a slightly wider range of temperature. Thus, it is becomes mandatory to design and develop circuits that are capable of operation efficiently and reliably under the space harsh conditions. This report presents the results obtained on the evaluation of a new (COTS) commercial-off-the-shelf crystal oscillator under extreme temperatures. The device selected for evaluation comprised of a 10 MHz, PX-570-series crystal oscillator. This type of device was recently introduced by Vectron International and is designed as high temperature oscillator [1]. These parts are fabricated using proprietary manufacturing processes designed specifically for high temperature and harsh environment applications [1]. The oscillators have a wide continuous operating temperature range; making them ideal for use in military and aerospace industry, industrial process control, geophysical fields, avionics, and engine control. They exhibit low jitter and phase noise, consume little power, and are suited for high shock and vibration applications. The unique package design of these crystal oscillators offers a small ceramic package footprint, as well as providing both through-hole mounting and surface mount options.

Patterson, Richard↗
DOE OSTI2025

Bayesian optimization of entropy-stabilized metal fluoride conversion cathodes and their synthesis

Fluoride-based conversion cathodes are promising for next-generation Li ion batteries because of their high voltage and energy densities. High entropy earth abundant fluoride cathodes are attractive for sustainable battery because of the potentially higher cycling stability. While Ni and Co containing equimolar alloys stabilized by high entropy were considered previously, Ni and Co free non-equimolar metal alloy compositions might offer new opportunities to increase materials stability and average voltage. This opportunity was pursued using Bayesian optimization of average voltage for the computational prediction of (Fe x1 Cu x2 Zn x3 Mn x4 Mg x5 )F 2 cathode chemistries. Theoretical voltage, room temperature free energy, and electronic structure of potentially high voltage compositions were computed using density functional theory calculations. Here, the experimental realization of non-equimolar quinary Co and Ni free fluorides with stable rutile single phase and improved conversion reaction voltage by up to 28 % compared to the equimolar alloy demonstrated the power of Bayesian optimization methods for the computationally guided experimental synthesis of fluoride cathodes. Finally, non-equimolar cathode chemistries were found with cycling stability superior to known multi-element fluorides.

25 ENERGY STORAGE↗
DOE OSTI2025

Controlling Selective C–O and C–H Bond Scission of Methanol by Supporting Pt on TiN and Mo 2 N Model Surfaces and Powder Catalysts

Transition metal nitrides (TMNs) have been explored as effective supports for Pt due to their Pt-like electronic properties. However, there is a lack of fundamental understanding regarding the behavior of Pt on different TMNs (Pt/TMN). Herein two TMNs, Mo 2 N and TiN, were modified with Pt and compared using methanol decomposition as a probe reaction via both ultrahigh vacuum (UHV) studies on thin films and ambient-pressure batch reactor studies of powder catalysts. Temperature-programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS) measurements were conducted under UHV conditions with Mo 2 N and TiN thin films. Mo 2 N was shown to favor C–H bond scission to form CO with a 56.2% selectivity, while TiN favored C–O bond scission to form CH 4 with a 74.5% selectivity. The addition of 0.9 monolayers (MLs) of Pt increased C–H bond scission selectivity to 89.7% and 49.2% for Mo 2 N and TiN respectively. Density functional theory (DFT) calculations on model surfaces revealed that the binding energy of O (BE *O ) was significantly reduced on Pt/TMNs, from −4.02 eV on Mo 2 N to −1.31 eV on Pt/Mo 2 N and −4.74 eV on TiN to −1.37 eV on Pt/TiN. As a result, C–O bond scission pathways were suppressed, leading to the preferential C–H bond scission that was observed experimentally. The C–O and C–H bond scission trends observed on thin films were then extended to powder catalysts, which demonstrated similar trends toward methanol decomposition. In conclusion, results from the current study establish that by combining UHV studies and DFT calculations over model surfaces, one can effectively predict the catalytic behavior of realistic TMN powder catalysts.

08 HYDROGEN↗
NASA NTRS2009

SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80 high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225 C

Patterson, Richard L.↗
DOE OSTI2026

Enhancing 300 Degree Celsius Electronic Packaging with Ceramic PCBs and Advanced Interconnection Techniques

Geothermal energy development requires downhole tools that operate reliably at temperatures up to 320 °C. While MWD tools work without thermal protection and logging tools use vacuum flasks for limited high-temperature use, Sandia National Laboratories is developing durable electronics on ceramic PCBs with protective coatings to enable long-term operation of geothermal instruments at sustained temperatures up to 300 °C.

Wright, Andrew Alexander [Sandia National Laborato↗
DOE OSTI2025

Refining T c Prediction in Hydrides via Symbolic‐Regression‐Enhanced Electron‐Localization‐Function‐Based Descriptors

Hydrogen‐based materials are able to possess extremely high superconducting critical temperatures, T c s , due to hydrogen's low atomic mass and strong electron–phonon interaction. Recently, a descriptor based on the Electron Localization Function (ELF) has enabled the rapid estimation of the T c of hydrogen‐containing compounds from electronic networking properties, but its applicability has been limited by the small size and homogeneity of the training dataset used. Herein, the model is re‐examined, compiling a publicly available combined dataset of 244 binary and ternary hydride superconductors. The analysis shows that though ELF‐based networking remains a valuable descriptor, its predictive power declines with increasing compositional complexity. However, by introducing the molecularity index, defined as the highest value of the ELF at which two hydrogen atoms connect, and applying symbolic regression, the accuracy of the predictions can be substantially enhanced. These results establish a more robust framework for assessing superconductivity in hydride materials, facilitating accelerated screening of novel candidates through integration with crystal structure prediction methods or high‐throughput searches.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1989

Crystal growth of SiC for electronic applications

The development of SiC as a high temperature semiconductor material is discussed, focusing on the epitaxial growth of single crystal SiC films on inexpensive single crystal silicon wafers. Progress in the improvement of film morphology and the elimination of antiphase disorder is examined. Potential candidate materials for high temperature semiconductor devices are compared and SiC films are evaluated.

Matus, Lawrence G.↗
NASA NTRS1976

The MPD arc as a plasmadynamic laser source

The paper reports results of measurements of local plasma properties (electron density and temperature, radiance, and population density) in the recombining plasma flow of a high power (100 kW) quasi-steady MPD arc designed as a plasmadynamic laser source. The profiles of electron density and temperature and the populations of excited states of Ar II show large deviations from LTE and indicate the existence of population inversions between the 4d and 4p states.

Campbell, E. M.↗
NASA NTRS2002

Power System for Venus Surface Exploration

A radioisotope power and cooling system is designed to provide electrical power for a probe operating on the surface of Venus. Most foreseeable electronics devices and sensors cannot operate at the 450 C ambient surface temperature of Venus. Because the mission duration is substantially long and the use of thermal mass to maintain an operable temperature range is likely impractical, some type of active refrigeration may be required to keep electronic components at a temperature below ambient. The fundamental cooling parameters are the cold sink temperature, the hot sink temperature, and the amount of heat to be removed. In this instance, it is anticipated that electronics would have a nominal operating temperature of 300 C. Due to the highly thermal convective nature of the high-density (90 bar CO2) atmosphere, the hot sink temperature was assumed to be 50 C, which provided a 500 C temperature of the cooler's heat rejecter to the ambient atmosphere. The majority of the heat load on the cooler is from the high temperature ambient surface environment on Venus, with a small contribution of heat generation from electronics and sensors. Both thermoelectric (RTG) and dynamic power conversion systems were analyzed, based on use of a standard isotope (General-purpose heat source, or GPHS) brick. For the radioisotope Stirling power converter configuration designed, the Sage model predicts a thermodynamic power output capacity of 478.1 watts, which slightly exceeds the required 469.1 watts. The hot sink temperature is 1200 C, and the cold sink temperature is 500 C. The required heat input is 1740 watts. This gives a thermodynamic efficiency of 27.48 %. It is estimated that the mechanical efficiency of the power converter design is on the order of 85 %, based on experimental measurements taken from 500-watt power class, laboratory-tested Stirling engines. The overall efficiency is calculated to be 23.36 %. The mass of the power converter is estimated at approximately 21.6 kg. Additional information is included in the original extended abstract.

Landis, Geoffrey A.↗
DOE OSTI2024

Electrical conductivity of a warm neutron star crust in magnetic fields: Neutron-drip regime

We compute the anisotropic electrical conductivity tensor of the inner crust of a compact star at nonzero temperature by extending a previous work on the conductivity of the outer crust. The physical scenarios, where such crust is formed, involve protoneutron stars born in supernova explosions, binary neutron star mergers, and accreting neutron stars. The temperature-density range studied covers the transition from a semidegenerate to a highly degenerate electron gas and assumes that the nuclei form a liquid, i.e., the temperature is above the melting temperature of the lattice of nuclei. The electronic transition probabilities include (i) the screening of electron-ion interaction in the hard-thermal-loop approximation for the QED plasma, (ii) the correlations of the ionic component in a one-component plasma, and (iii) finite nuclear size effects. The conductivity tensor is obtained from the Boltzmann kinetic equation in relaxation time approximation accounting for the anisotropy introduced by a magnetic field. The sensitivity of the results towards the matter composition of the inner crust is explored by using several compositions of the inner crust, which were obtained using different nuclear interactions and methods of solving the many-body problem. The standard deviations of relaxation time and components of the conductivity tensor from the average are below ≤25% except close to crust-core transition, where nonspherical nuclear structures are expected. Finally, our results can be used in dissipative magnetohydrodynamics simulations of warm compact stars.

Physics↗
NASA NTRS2009

Evaluation of Advanced COTS Passive Devices for Extreme Temperature Operation

Electronic sensors and circuits are often exposed to extreme temperatures in many of NASA deep space and planetary surface exploration missions. Electronics capable of operation in harsh environments would be beneficial as they simplify overall system design, relax thermal management constraints, and meet operational requirements. For example, cryogenic operation of electronic parts will improve reliability, increase energy density, and extend the operational lifetimes of space-based electronic systems. Similarly, electronic parts that are able to withstand and operate efficiently in high temperature environments will negate the need for thermal control elements and their associated structures, thereby reducing system size and weight, enhancing its reliability, improving its efficiency, and reducing cost. Passive devices play a critical role in the design of almost all electronic circuitry. To address the needs of systems for extreme temperature operation, some of the advanced and most recently introduced commercial-off-the-shelf (COTS) passive devices, which included resistors and capacitors, were examined for operation under a wide temperature regime. The types of resistors investigated included high temperature precision film, general purpose metal oxide, and wirewound.

Patterson, Richard↗
NASA NTRS1980

Ion plating studies for high temperature applications

An experimental project was undertaken to ion plate, by electron beam evaporation, Al films onto 4340 steel substrates using (and at the time troubleshooting) the custom built V.T.A. 7375 electron beam ion plating system. A careful recent literature and commercial vendor survey indicates possible means of improving the trouble plagued V.T.A. system.

Davis, J. H.↗
NASA NTRS1985

Molecular processes in a high temperature shock layer

The development of techniques for the calculation of electron capture widths, electronic wave functions, cross sections and rates needed for the description of the dissociative recombination (DR) of molecular ions with electrons were described. The cross sections and rates were calculated by using harmonic oscillator wave functions for the ion and a delta function approximation for the continuum vibrational wave function in the repulsive dissociative channel. In order to obtain DR cross sections of quantitative accuracy, a computer program which solves the one dimensional nuclear motion wave equation was revised to calculate the cross sections and rates. The program and the new results are described. Included is a discussion of large windows found in the dissociative recombination cross sections from excited ion vibrational levels. These windows have not been previously reported in the literature. The magnitude of the DR cross sections for several dissociative routes are sensitive to the location of the crossing of the neutral and ion potential curves. Studies of the effects of basis set and CI wave function size on vertical excitation energies are described. Preliminary studies on N2 and O2 using large scale wave functions are also reported.

Guberman, S. L.↗
NASA NTRS2013

Fully Printed, Flexible, Phased Array Antenna for Lunar Surface Communication

NASAs future exploration missions focus on the manned exploration of the Moon, Mars, and beyond, which will rely heavily on the development of a reliable communications infrastructure from planetary surface-to-surface, surface-to-orbit, and back to Earth. Flexible antennas are highly desired in many scenarios. Active phased array antennas (active PAAs) with distributed control and processing electronics at the surface of an antenna aperture offer numerous advantages for radar communications. Large-area active PAAs on flexible substrates are of particular interest in NASA s space radars due to their efficient inflatable package that can be rolled up during transportation and deployed in space. Such an inflatable package significantly reduces stowage volume and mass. Because of these performance and packaging advantages, large-area inflatable active PAAs are highly desired in NASA s surface-to-orbit and surface-to-relay communications. To address the issues of flexible electronics, a room-temperature printing process of active phased-array antennas on a flexible Kapton substrate was developed. Field effect transistors (FETs) based on carbon nanotubes (CNTs), with many unique physical properties, were successfully proved feasible for the PAA system. This innovation is a new type of fully inkjet-printable, two-dimensional, high-frequency PAA on a flexible substrate at room temperature. The designed electronic circuit components, such as the FET switches in the phase shifter, metal interconnection lines, microstrip transmission lines, etc., are all printed using a special inkjet printer. Using the developed technology, entire 1x4, 2x2, and 4x4 PAA systems were developed, packaged, and demonstrated at 5.3 GHz. Several key solutions are addressed in this work to solve the fabrication issues. The source/drain contact is developed using droplets of silver ink printed on the source/drain areas prior to applying CNT thin-film. The wet silver ink droplets allow the silver to wet the CNT thin-film area and enable good contact with the source and drain contact after annealing. A passivation layer to protect the device channel is developed by bonding a thin Kapton film on top of the device channel. This film is also used as the media for transferring the aligned CNT thin-film on the device substrate. A simple and cost-effective technique to form multilayer metal interconnections on flexible substrate is developed and demonstrated. Contact vias are formed on the second substrate prior to bonding on the first substrate. Inkjet printing is used to fill the silver ink into the via structure. The printed silver ink penetrates through the vias to contact with the contact pads on the bottom layer. It is then annealed to form a good connection. One-dimensional and two-dimensional PAAs were fabricated and characterized. In these circuits, multilayer metal interconnects were used to make a complete PAA system.

Subbaraman, Harish↗
DOE OSTI2025

Electronic and reactivity changes in epitaxially grown Ce 1-x Zr x O 2-δ (111) thin films

Ceria composite catalysts have long been used for ketonization reactions, which is a valuable chemistry for the upgrading of biomass-derived carboxylates. To better understand the interaction of zirconia with ceria in the context of ketonization, thin epitaxial films of ceria-zirconia mixed metal oxide Ce 1-x Zr x O 2-δ (x = 0-1) were grown on a Pt(111) substrate in ultrahigh vacuum conditions and studied with X-ray photoelectron spectroscopy (XPS). Core level and valence band XPS results suggest a strong interaction between ceria and zirconia cations, possibly due to increased filling of unoccupied 4f 0 orbitals of ceria from neighboring Zr cations in the lattice structure. This leads to a partial reduction of ceria from Ce 4+ to Ce 3+ , with Zr remaining predominantly in the 4+ oxidation state. Ketonization of acetic acid was studied using temperature programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS). These results found ketonization over mixed Ce-Zr composite oxides exhibited lower activation energies than for pure CeO 2 and ZrO 2 , with Ce 0.38 Zr 0.62 O 2-δ exhibiting the highest yield of acetone among the studied surfaces. In conclusion, these results suggest the high activity of Ce-Zr catalysts appears to be a result of oxygen vacancy formation, stabilized by electron donation from Zr cations.

36 MATERIALS SCIENCE↗