Differential photo effects in gallium arsenide- metal junctions.
Alloying pairs of metal pellets to n and p type semiinsulating GaAs, discussing photo effects
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Alloying pairs of metal pellets to n and p type semiinsulating GaAs, discussing photo effects
Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required.
Narrow bandwidth FM signal distortion during multiplication in lossless varactor multiplier calculated, using equivalent circuit of frequency doubler
Tunneling electron and local mode phonon interaction in MIS n-type semiconductors
Gallium arsenide solar cell preparation by surface deposition of cuprous iodide on thin n-type polycrystalline layers and heating in iodine vapor
Rectification efficiency and reliability of driven transistor synchronous rectifiers
Critique of Ethiopian Afar depression formation as oceanic crust resulting from Arabia drift, considering plate tectonics analysis for bifurcated spreading zones
A cold cathode emitter of hot electrons for use as a source of electrons in vacuum gauges and mass spectrometers was developed using standard Norton electroluminescent silicon carbide p-n diodes operated under reverse bias conditions. Continued development including variations in the geometry of these emitters was carried out such that emitters with an emission efficiency (emitted current/junction current) as high as 3 x 10-0.00001 were obtained. Pulse measurements of the diode characteristics were made and showed that higher efficiency can be attained under pulse conditions probably due to the resulting lower temperatures resulting from such operation.
Precise values of the reverse saturation currents in silicon solar cells and magnitudes of the diffusion and recombination components have been obtained. The recombination current as well as leakage current due to shunting are shown to be nonuniform across the cell. The diffusion lengths calculated from the diffusion current components agree well with diffusion lengths measured independently in similar material. Models are given demonstrating the effect of recombination and shunting currents on the dark current-voltage characteristics of solar cells.
A new indirect approach to crustal analysis of a specific sector of the Ethiopian plateaus and rift is discussed. It is suggested that progressive changes in basalt chemistry across this area are related to crustal thinning and shallowing of the zone of melting under the Afar rift.
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Electronic system locates interferences in radar reception. System utilizes well known frequency-modulated continuous-wave technique to locate objects with nonlinear impedances. FM transmitter generates signal through bandpass filter which eliminates higher order harmonics around carrier frequency.
An apparatus is described for locating an electrically nonlinear object and determining the distance to the object by transmitting an FM signal in the vicinity of the nonlinear object causing a signal of a higher harmonic to be reflected by the nonlinear object. A receiver is provided for receiving the higher harmonic reflected signal. It is compared with the initial exciting signal so as to produce a signal, the amplitude of which is directly proportional to the distance to the object.
Precise values of the reverse saturation currents in solar cells and magnitudes of the diffusion and recombination components have been obtained. The recombination current as well as leakage current due to shunting are shown to be nonuniform across the cell and to be responsible for up to 30% loss in efficiency for the average cell in a Jupiter-type environment. Models are given demonstrating the effect of recombination and shunting currents on dark and light characteristics of solar cells.
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Explore the source record for details and available documents.
Explore the source record for details and available documents.