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An embodiment includes a platform shape memory polymer system. Such an embodiment exhibits a blend of tunable, high performance mechanical attributes in combination with advanced processing capabilities and good biocompatibility. A post-polymerization crosslinking synthetic approach is employed that combines polyurethane and thiol-ene synthetic processes. Other embodiments are described herein.
In accordance with one aspect of the presently disclosed inventive concepts, a product includes a porous three-dimensional (3D) printed polymer structure having elastomeric shape memory, where the structure includes a material comprising a plurality of gas-filled microballoons. The 3D printed polymer structure has hierarchical porosity.
The primary mechanism of optical memoristive devices relies on phase transitions between amorphous and crystalline states. The slow or energy-hungry amorphous–crystalline transitions in optical phase-change materials are detrimental to the scalability and performance of devices. Leveraging an integrated photonic platform, nonvolatile and reversible switching between two layered structures of indium selenide (In 2 Se 3 ) triggered by a single nanosecond pulse is demonstrated. The high-resolution pair distribution function reveals the detailed atomistic transition pathways between the layered structures. With interlayer “shear glide” and isosymmetric phase transition, switching between the α- and β-structural states contains low re-configurational entropy, allowing reversible switching between layered structures. Broadband refractive index contrast, optical transparency, and volumetric effect in the crystalline–crystalline phase transition are experimentally characterized in molecular-beam-epitaxy-grown thin films and compared to ab initio calculations. Finally, the nonlinear resonator transmission spectra measure of incremental linear loss rate of 3.3 GHz, introduced by a 1.5 µm-long In 2 Se 3 -covered layer, resulted from the combinations of material absorption and scattering.
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We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.
Two-photon polymerization (TPP) is widely used to create 3D micro- and nanoscale scaffolds for biological and mechanobiological studies, which often require the mechanical characterization of the TPP fabricated structures. To satisfy physiological requirements, most of the mechanical characterizations need to be conducted in liquid. However, previous characterizations of TPP fabricated structures are all conducted in air due to the limitation of conventional micro- and nanoscale mechanical testing methods. In this study, a new experimental method is reported for testing the mechanical properties of TPP-printed microfibers in liquid. The experiments show that the mechanical behaviors of the microfibers tested in liquid are significantly different from those tested in air. By controlling the TPP writing parameters, the mechanical properties of the microfibers can be tailored over a wide range to meet a variety of mechanobiology applications. In addition, it is found that, in water, the plasticly deformed microfibers can return to their predeformed shape after tensile strain is released. The shape recovery time is dependent on the size of microfibers. The experimental method represents a significant advancement in mechanical testing of TPP fabricated structures and may help release the full potential of TPP fabricated 3D tissue scaffolds for mechanobiological studies.
In this paper, a storage method and a context-aware circuit simulation idea are presented for the sum of block diagonal matrices. Additionally, using the design technique for a generalized circuit for the Hamiltonian dynamics through the truncated series, we generalize the idea to (0–1) matrices and discuss the generalization for the real matrices. The presented circuit requires O(n) number of quantum gates and yields the correct output with the success probability depending on the number of elements: For matrices with poly(n), the success probability is 1 / poly(n). Since the operations on the circuit are controlled by the data itself, the circuit can be considered as a context-aware computing gadget. In addition, it can be used in variational quantum eigensolver and in the simulation of molecular Hamiltonians.
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We present an approach for minimizing the critical current for the magnetization switching in magnetic tunnel junctions by optimizing the spatial distribution of the current density. We show that such a minimization is possible because critical current is determined by the condition of making one of the magnetization eigenstates grow in time. The excitation of the eigenstates is enhanced when the spatial distributions of the eigenstates and current density overlap. Critical current can be viewed as a functional of the current density spatial distribution and it can be minimized by optimizing this distribution. Such an optimization results in a major reduction of the critical current and increase of the switching efficiency, viz. the ratio between the energy barrier and critical current. The minimized critical current increases approximately linearly with the magnetic tunnel junction size, which is much slower than critical current for the case of a uniform current density. The optimized efficiency can be approximately a constant with respect to the magnetic tunnel junction size, which is much higher than the efficiency for the uniform current density. Additional optimization can be achieved by spatially modulating the material parameters, e.g., the saturation magnetization. The presented approach and obtained scaling of the critical current and efficiency offers opportunities for the magnetic tunnel junction optimization.
Deformation characterization of low-symmetry phases such as martensite in SMAs is difficult due to a fine-scale hierarchical microstructure. With X-ray microLaue diffraction, in-situ deformation of martensite is examined in a notched NiTi specimen. The local deformation is influenced by the notch stress field, initial martensite microstructure, and interaction between notch stress field and the external load. The microstructure evolves heterogeneously and inelastically, with detwinning and twin nucleation occurring simultaneously through loading. These results contrast with the traditional view of martensite deformation that is partitioned in three distinct regimes: elasticity, reorientation and de-twinning.
Resistance drift in amorphous Ge 2 Sb 2 Te 5 is experimentally characterized in melt-quenched line cells in the range of 300 K to 125 K and is observed to follow the previously reported power-law behavior with drift coefficients in the range of 0.07 to 0.11 in the dark, linearly decreasing with 1/kT. While these drift coefficients measured in the dark are similar to commonly observed drift coefficients (~0.1) at and above room temperature, measurements under light show a significantly lower drift coefficient (0.05 under illumination vs 0.09 in the dark at 150 K). Periodic on/off switching of light shows a sudden decrease/increase in resistance, attributed to photo-excited carriers, followed by a very slow response (~30 min at 150 K) attributed to contribution of electron traps and slow trap-to-trap charge exchanges. A device-level electronic model is used to relate these experimental findings to gradual charging of electron traps in amorphous Ge 2 Sb 2 Te 5 , which gives rise to growth of a potential barrier for holes in time and, hence, resistance drift.
Here, we use ab initio calculations to study the role of stacking faults in connecting the high-temperature B2 and the theoretically predicted low-temperature B33 NiTi phases. In contrast with prior work, we describe the B 2 → B 33 phase transformation in terms of alternate bilayer shifts by 1 2 [100] on the ( 011 ) B 2 plane, obtaining a viable pathway; the same mechanism could also work with the B19 parent phase. We then examine B33-like structures built from alternate stacking sequences of B19 bilayers, constructed to have monoclinic tilt angles close to the experimentally reported NiTi B19' martensite, and find four low-energy stacking-fault variants with energies 5.8–8.5 meV/atom above the calculated B19' martensite structure, suggesting that such structures might appear as a part of the NiTi martensite phase at low temperatures. Investigating further the occurrence of specific coordinated planar shifts in NiTi systems, we report a dynamically stable NiTi B27 phase and find that it is only 1.2 meV/atom above the calculated B33 ground-state structure, thus having a potential to also play a role in NiTi martensitic phase transformation.
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