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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Heterogenous Integration of Boron-Doped p -Diamond with Monolayer n -MoS 2 for PN Junctions Operating at Room Temperature

Diamond has tremendous potential for power electronics, due to its superior thermal conductivity, large electric field strength, and high carrier mobilities. However, the absence of a reliable room temperature n-type transport has impeded any advancements in diamond-based electronics. Here, we circumvent this bottleneck by integrating n-type two-dimensional (2D) monolayers of molybdenum disulfide (MoS 2 ) with boron doped p-type single crystal diamond and demonstrate 2D/3D heterostructure-based PN junction diodes that operate at room temperature with excellent rectification characteristics. Our diodes achieve a maximum forward current density (J D ) of ∼4000 A/cm 2 , an ideality factor (η) value of ∼3.7, and a rectification ratio (RR) of 10 6 . We find that the origin of current rectification stems from the interlayer recombination of majority carriers driven by direct tunnelling (DT) and Fowler Nordheim (FN) tunnelling mechanisms. In conclusion, our demonstration can open new avenues for diamond-based power electronics through its integration with 2D materials.

2D/3D integration↗
DOE OSTI2025

48 Ca(p,pn) 47 Ca linac production for the preparation of a 47 Ca/ 47 Sc generator

Here, the production of 47 Sc via the nuclear reaction 48 Ca(p,pn) 47 Ca→(β-, T 1/2 = 4.54 d) 47 Sc and the assembly of a 47 Ca/ 47 Sc generator system has been investigated at Brookhaven National Laboratory. To produce 47 Ca, a pressed nat CaCl 2 target was irradiated with a proton beam at energy on target of 27.5 MeV at Brookhaven Linac Isotope Producer. Irradiated targets were dissolved in water and then acidified with concentrated HCl before separation using extraction chromatography through a diglycolamide (DGA) resin column. After ingrowth, 47 Sc was collected at >90 % with low contamination from both nonradioactive metals and coproduced radionuclides. A total of four 47 Ca/ 47 Sc separations were performed with 6–7 days between the irradiation and the separation to allow the equilibration of the ingrowing 47 Sc.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2025

Exploring transport mechanisms in atomic precision advanced manufacturing enabled pn junctions

We investigate the different transport mechanisms that can occur in pn junction devices made using atomic precision advanced manufacturing at temperatures ranging from cryogenic to room temperature. We first elucidate the potential cause of the anomalous behavior observed in the forward-bias response of these devices in recent cryogenic temperature measurements, which deviates from the theoretical response of a silicon Esaki diode. These anomalous behaviors include current suppression at low voltages in the forward-bias response and a much lower valley voltage at cryogenic temperatures than theoretically expected for a silicon diode. To investigate the potential causes of these anomalies, we studied the effects of a few possible transport mechanisms, including band-to-band tunneling, bandgap narrowing, potential impact of non-Ohmic contacts, band quantization, impact of leakage, and inelastic trap-assisted tunneling, through semi-classical simulations. We find that a combination of two sets of band-to-band tunneling (BTBT) parameters can qualitatively approximate the shape of the tunneling current at low bias. This can arise from band quantization and realignment due to the strong potential confinement in δ-layers. We also find that the lower-than-theoretically-expected valley voltage can be attributed to modifications in the electronic band structure within the δ-layer regions, leading to a significant bandgap narrowing induced by the high density of dopants. Finally, we extend our analyses to room temperature operation and predict that trap-assisted tunneling (TAT) facilitated by phonon interactions may become significant, leading to a complex superposition of BTBT and TAT transport mechanisms in the electrical measurements.

band gap↗
NASA NTRS1975

Studies of silicon PN junction solar cells

Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed.

Lindholm, F. A.↗
NASA NTRS1976

TDRSS telecommunications system, PN code analysis

The pseudo noise (PN) codes required to support the TDRSS telecommunications services are analyzed and the impact of alternate coding techniques on the user transponder equipment, the TDRSS equipment, and all factors that contribute to the acquisition and performance of these telecommunication services is assessed. Possible alternatives to the currently proposed hybrid FH/direct sequence acquisition procedures are considered and compared relative to acquisition time, implementation complexity, operational reliability, and cost. The hybrid FH/direct sequence technique is analyzed and rejected in favor of a recommended approach which minimizes acquisition time and user transponder complexity while maximizing probability of acquisition and overall link reliability.

Dixon, R.↗
NASA NTRS1977

TDRSS telecommunication system PN code analysis

The pseudonoise (PN) code library for the Tracking and Data Relay Satellite System (TDRSS) Services was defined and described. The code library was chosen to minimize user transponder hardware requirements and optimize system performance. Special precautions were taken to insure sufficient code phase separation to minimize cross-correlation sidelobes, and to avoid the generation of spurious code components which would interfere with system performance.

Gold, R.↗
NASA NTRS1977

Concatenated shift registers generating maximally spaced phase shifts of PN-sequences

A large class of linearly concatenated shift registers is shown to generate approximately maximally spaced phase shifts of pn-sequences, for use in pseudorandom number generation. A constructive method is presented for finding members of this class, for almost all degrees for which primitive trinomials exist. The sequences which result are not normally characterized by trinomial recursions, which is desirable since trinomial sequences can have some undesirable randomness properties.

Hurd, W. J.↗
NASA NTRS1978

An optimum PN code search technique for a given apriori signal location density

A method is presented for optimizing (minimizing) the acquisition time for a PN-type spread spectrum system when the a priori probability density function is not uniform. For an assumed a priori Gaussian density function, calculations show that the acquisition time, when the 0.5 probability acquisition time is used as a measure of acquisition time, is reduced by 40% for a cell detection probability of 0.25 and when three sweeps are used. For the same parameters and with four sweeps the acquisition time is reduced by 41%. When the acquisition time probability is set to 0.9 instead of 0.5, the reduction is 25% of the uniform sweep time.

Holmes, J. K.↗
NASA NTRS1979

Carrier phase recovery performance for PN-spread TDRSS link with radio-frequency interference

The carrier-phase recovery performance of a Costas loop for a nonlinear satellite channel with uplink and downlink noise is analyzed, and the extension of these results to the case where uplink radio-frequency interference (RFI) is present is considered. The signal format here is binary phase-shift-keyed (BPSK) or unbalanced quaternary phase-shift-keyed (UQPSK), the signals being either the non-return-to-zero (NRZ) or biphase (Manchester) type. With UQPSK, at least one data stream must be PN-spread. The channel comprises additive white Gaussian noise (WGN), a wideband filter, a bandpass nonlinearity and more additive WGN. The RFI being considered is pulsed continuous-wave, pulsed WGN, or a combination of the two. It is noted that the Tracking and Data Relay Satellite System (TDRSS) will be subjected to RFI from certain locations, especially in the S-band of frequencies. The characteristics of this link are generalized to form the assumptions underlying this analysis. The analytical results given include the S-curve of the equivalent loop and the phase-error variance of the linearized loop.

Mckenzie, T. M.↗
NASA NTRS1983

Polynomial driven time base and PN generator

In support of the planetary radar upgrade new hardware was designed to increase resolution and take advantage of new technology. Included is a description of the Polynomial Driven Time Base and PN Generator which is used for range gate coding in the planetary radar system.

Brokl, S. S.↗
NASA NTRS1987

A V-grooved AlGaAs/GaAs passivated PN junction

A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0 micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction.

Bailey, Sheila G.↗
NASA NTRS1986

Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

Leon, R. P.↗
NASA NTRS1987

Using Colored Stochastic Petri Net (CS-PN) software for protocol specification, validation, and evaluation

The specification, verification, validation, and evaluation, which make up the different steps of the CS-PN software are outlined. The colored stochastic Petri net software is applied to a Wound/Wait protocol decomposable into two principal modules: request or couple (transaction, granule) treatment module and wound treatment module. Each module is specified, verified, validated, and then evaluated separately, to deduce a verification, validation and evaluation of the complete protocol. The colored stochastic Petri nets tool is shown to be a natural extension of the stochastic tool, adapted to distributed systems and protocols, because the color conveniently takes into account the numerous sites, transactions, granules and messages.

Zenie, Alexandre↗
NASA NTRS1987

A V-grooved AlGaAs/GaAs passivated pn junction

A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0-micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction.

Bailey, S. G.↗
NASA NTRS1988

Application of PN and avalanche silicon photodiodes to low-level optical

New approaches to the discovery of other planetary systems require very sensitive and stable detection techniques in order to succeed. Two methods in particular, the astrometric and the photometric methods, require this. To begin understanding the problems and limitations of solid state detectors regarding this application, preliminary experiments were performed at the National Bureau of Standards and a low light level detector characterization facility was built. This facility is briefly described, and the results of tests conducted in it are outlined. A breadboard photometer that was used to obtain stellar brightness ratio precision data is described. The design principles of PN and avalanche silicon photodiodes based on low light level measuring circuits are discussed.

Eppeldauer, G.↗
NASA NTRS1992

Effect of DCB extraction on Mossbauer and spectral data for a Hawaiian palagonitic soil (PN-9): Iden tification of pigmentary phases

The study of palagonitic soils is an active area of research in martian geoscience because the spectral and magnetic properties of a subset are spectral and/or magnetic analogues of martian bright regions. An understanding of the composition, distribution, and mineralogy of ferric-bearing phases for palagonitic soils forms, through spectral and magnetic data, a basis for inferring the nature of ferric-bearing phases on Mars. Progress has been made in this area, but the data set is incomplete, especially with respect to the nature of pigmenting phases. The purpose of this study is to identify the nature of the pigment for Hawaiian palagonitic soil PN-9 by using extraction procedures to selectively remove iron oxide phases. This soil was collected at the same locale as samples Hawaii 34 and VOL02. All three soils are good spectral analogues for martian bright regions.

Morris, Richard V.↗