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The dosimetric response of an active pixel sensor is analyzed. heavy ions are seen to damage the pixel in much the same way as gamma radiation. The probability of a hot pixel is seen to exhibit behavior that is not typical with other microdose effects.
The possibility of utilizing low-orbit active microwave sensors in Search and Rescue (SAR) operations to detect and positionally locate scenes of distress is studied. The use of a scanning type system, i.e., rotating a highly directional antenna as opposed to more complex synthetic aperture type system is addressed. Targets for this system will be passive reflectors, not active transmitters like EPIRBs; reflectors which could be easily stowed, require little to no maintenance, could be quickly erected and can be more affordable than battery powered alternatives. Presented are parametric analyses to determine the required antenna gains and reflector areas for various frequencies and orbit altitudes. Also, major issues are raised as well as indicating areas requiring further study.
An active pixel cell includes electronic shuttering capability. The cell can be shuttered to prevent additional charge accumulation. One mode transfers the current charge to a storage node that is blocked against accumulation of optical radiation. The charge is sampled from a floating node. Since the charge is stored, the node can be sampled at the beginning and the end of every cycle. Another aspect allows charge to spill out of the well whenever the charge amount gets higher than some amount, thereby providing anti blooming.
This paper describes the technology, design features and reliability characterization methodology of a CMOS Active Pixel Sensor. Both overall chip reliability and pixel reliability are projected for the imagers.
A semiconductor imaging system preferably having an active pixel sensor array compatible with a CMOS fabrication process. Color-filtering elements such as polymer filters and wavelength-converting phosphors can be integrated with the image sensor.
A low power smart vision system based on a large format (currently 1K x 1K) active pixel sensor (APS) integrated with a programmable neural processor for fast vision applications is presented.
This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.
This paper presents heavy ion data on the single event transient (SET) response of a Photobit active pixel sensor (APS) four quadrant test chip with different radiation tolerant designs in a standard 0.35 micron CMOS process. The physical design techniques of enclosed geometry and P-channel guard rings are used to design the four N-type active photodiode pixels as described in a previous paper. Argon transient measurements on the 256 x 256 chip array as a function of incident angle show a significant variation in the amount of charge collected as well as the charge spreading dependent on the pixel type. The results are correlated with processing and design information provided by Photobit. In addition, there is a large degree of statistical variability between individual ion strikes. No latch-up is observed up to an LET of 106 MeV/mg/sq cm.
A low power smart vision system based on a large format (currently 1Kx1K) active pixel sensor (APS) integrated with a programmable neural processor for fast vision applications is presented.
This paper gives the status of theoretical and experimental efforts at JPL in the development of environmentally robust (radiation hard and radiation tolerant), ultra-low power, high performance CMOS active pixel sensor (APS) imagers for star tracker/imager applications.
A 128 x 128 element CMOS active pixel image sensor (APS) with on-chip timing, control, and.
Charge-coupled devices (CCDs) have been used extensively in the past in star trackers and fine guidance systems. A new technology, the active pixel sensor, is a possible successor to CCDs. This technology potentially features the same sensitivity and performance of the CCD with additional improvements. These improvements include random access capability, easy window-of-interest readout, non-destructive readout for signal-to-noise improvement, high radiation tolerance, simplified clocking voltages, and easy integration with other on-chip signal processing circuitry. The state-of-the-art of this emerging technology and its potential application to guidance and navigation systems is discussed.
Charge-coupled devices (CCD's) are presently the technology of choice for most imaging applications. In the 23 years since their invention in 1970, they have evolved to a sophisticated level of performance. However, as with all technologies, we can be certain that they will be supplanted someday. In this paper, the Active Pixel Sensor (APS) technology is explored as a possible successor to the CCD. An active pixel is defined as a detector array technology that has at least one active transistor within the pixel unit cell. The APS eliminates the need for nearly perfect charge transfer -- the Achilles' heel of CCDs. This perfect charge transfer makes CCD's radiation 'soft,' difficult to use under low light conditions, difficult to manufacture in large array sizes, difficult to integrate with on-chip electronics, difficult to use at low temperatures, difficult to use at high frame rates, and difficult to manufacture in non-silicon materials that extend wavelength response.
The relationship between surface properties and echo characteristics, as determined by radar technology, is discussed; echo enhancement to reduce measurement uncertainty was included. Feasibility data, suggested baseline functional descriptions of various types of active microwave sensors, and examples of existing radar techniques are summarized. Data manage and measurement processes are also covered.
This presentation gives the status of theoretical and experimental efforts at JPL, in the development of environmentally robust (rad hard and rad tolerant), ultra-low power, high performance cmos active pixel sensor (aps) imagers for star tracker/imager applications.
A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.