Use of analog computer for the equalization of electromagnetic shaker in transient testing
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A time-dependent one-dimensional model of the stratospheric sulfate aerosol layer is presented. In constructing the model, a wide range of basic physical and chemical processes are incorporated in order to avoid predetermining or biasing the model predictions. The simulation, which extends from the surface to an altitude of 58 km, includes the troposphere as a source of gases and condensation nuclei and as a sink for aerosol droplets. The size distribution of aerosol particles is resolved into 25 categories with particle radii increasing geometrically from 0.01 to 2.56 microns such that particle volume doubles between categories.
The numerical algorithms used to simulate the advection, diffusion, sedimentation, coagulation, and condensational growth of atmospheric aerosols are described. The model can be used in one, two, or three spatial dimensions. The continuity equation in a generalized horizontal and vertical coordinate system is developed, which allows the model to be quickly adapted to a wide variety of dynamical models of global or regional scale. Algorithms are developed to treat the various physical processes, and the results of simulations are presented, which show the strengths and weaknesses of these algorithms. Although the emphasis is on the modeling of aerosols, the work is also applicable to the simulations of the transport of gases.
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Review of fast analog/hybrid computer systems, integrated operational amplifiers, electronic mode-control switches, digital attenuators, and packaging techniques
Fast analog comparator for hybrid computation using wideband DC amplifier with regenerative feedback circuit providing digital output
Fast analog comparator with digital output for hybrid computers, using broadband dc amplifier with regenerative feedback
A real-time contour detector and data acquisition system is described for an angiographic apparatus having a video scanner for converting an X-ray image of a structure characterized by a change in brightness level compared with its surrounding into video format and displaying the X-ray image in recurring video fields. The real-time contour detector and data acqusition system includes track and hold circuits; a reference level analog computer circuit; an analog compartor; a digital processor; a field memory; and a computer interface.
A prototype Space Shuttle Main Engine (SSME) Thrust Vector Control (TVC) Actuator analog model was successfully completed. The prototype, mounted on five printed circuit (PC) boards, was delivered to NASA, checked out and tested using a modular replacement technique on an analog computer. In all cases, the prototype model performed within the recording techniques of the analog computer which is well within the tolerances of the specifications.
In nonvolatile random-access memory (RAM) circuits of a proposed type, digital data would be stored in analog form in ferroelectric field-effect transistors (FFETs). This type of memory circuit would offer advantages over prior volatile and nonvolatile types: In a conventional complementary metal oxide/semiconductor static RAM, six transistors must be used to store one bit, and storage is volatile in that data are lost when power is turned off. In a conventional dynamic RAM, three transistors must be used to store one bit, and the stored bit must be refreshed every few milliseconds. In contrast, in a RAM according to the proposal, data would be retained when power was turned off, each memory cell would contain only two FFETs, and the cell could store multiple bits (the exact number of bits depending on the specific design). Conventional flash memory circuits afford nonvolatile storage, but they operate at reading and writing times of the order of thousands of conventional computer memory reading and writing times and, hence, are suitable for use only as off-line storage devices. In addition, flash memories cease to function after limited numbers of writing cycles. The proposed memory circuits would not be subject to either of these limitations. Prior developmental nonvolatile ferroelectric memories are limited to one bit per cell, whereas, as stated above, the proposed memories would not be so limited. The design of a memory circuit according to the proposal must reflect the fact that FFET storage is only partly nonvolatile, in that the signal stored in an FFET decays gradually over time. (Retention times of some advanced FFETs exceed ten years.) Instead of storing a single bit of data as either a positively or negatively saturated state in a ferroelectric device, each memory cell according to the proposal would store two values. The two FFETs in each cell would be denoted the storage FFET and the control FFET. The storage FFET would store an analog signal value, between the positive and negative FFET saturation values. This signal value would represent a numerical value of interest corresponding to multiple bits: for example, if the memory circuit were designed to distinguish among 16 different analog values, then each cell could store 4 bits. Simultaneously with writing the signal value in the storage FFET, a negative saturation signal value would be stored in the control FFET. The decay of this control-FFET signal from the saturation value would serve as a model of the decay, for use in regenerating the numerical value of interest from its decaying analog signal value. The memory circuit would include addressing, reading, and writing circuitry that would have features in common with the corresponding parts of other memory circuits, but would also have several distinctive features. The writing circuitry would include a digital-to-analog converter (DAC); the reading circuitry would include an analog-to-digital converter (ADC). For writing a numerical value of interest in a given cell, that cell would be addressed, the saturation value would be written in the control FFET in that cell, and the non-saturation analog value representing the numerical value of interest would be generated by use of the DAC and stored in the storage FFET in that cell. For reading the numerical value of interest stored in a given cell, the cell would be addressed, the ADC would convert the decaying control and storage analog signal values to digital values, and an associated fast digital processing circuit would regenerate the numerical value from digital values.
A direct-execution parallel architecture for the Advanced Continuous Simulation Language (ACSL) is presented which overcomes the traditional disadvantages of simulations executed on a digital computer. The incorporation of parallel processing allows the mapping of simulations into a digital computer to be done in the same inherently parallel manner as they are currently mapped onto an analog computer. The direct-execution format maximizes the efficiency of the executed code since the need for a high level language compiler is eliminated. Resolution is greatly increased over that which is available with an analog computer without the sacrifice in execution speed normally expected with digitial computer simulations. Although this report covers all aspects of the new architecture, key emphasis is placed on the processing element configuration and the microprogramming of the ACLS constructs. The execution times for all ACLS constructs are computed using a model of a processing element based on the AMD 29000 CPU and the AMD 29027 FPU. The increase in execution speed provided by parallel processing is exemplified by comparing the derived execution times of two ACSL programs with the execution times for the same programs executed on a similar sequential architecture.
Analog switching circuits for analog and hybrid computers