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Results for “Annealing temperature”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Low temperature annealing and cathodoluminescence studies of type 1 chondrule compositions

Preliminary results indicate that the yellow luminescing mesostases in type I chondrules can be altered by the effects of the low level thermal metamorphism. Although heat alone was insufficient to alter the CL, reheating for geologically relevant periods could have the same results as we obtained in a second series of experiments with water present. It is known that both water and solutions of sodium metasilicate greatly accelerate the devitrification of glasses. The results of the experiments that will be repeated should further clarify how the CL changes with increased thermal alteration.

Dehart, John M.↗
NASA NTRS1992

Effect of high temperature annealing on the microstructure of SCS-6 SiC fibers

The effect of annealing the SCS-6 SiC fiber for one hour at 2000 C in an argon atmosphere is reported. The SiC grains in the fiber coarsen appreciably and the intergranular carbon films segregate to the grain junctions. It would appear that grain growth in the outer part of the fiber is primarily responsible for the loss in fiber strength and improvement in fiber creep resistance.

Ning, X. J.↗
NASA NTRS1981

Effects of low temperature periodic annealing on the deep-level defects in 200 keV proton irradiated AlGaAs-GaAs solar cells

The GaAs solar cell has shown good potential for space applications. However, degradation in performance occurred when the cells were irradiated by high energy electrons and protons in the space environment. The considered investigation is concerned with the effect of periodic thermal annealing on the deep-level defects induced by the 200 keV protons in the AlGaAs-GaAs solar cells. Protons at a fluence of 10 to the 11th P/sq cm were used in the irradiation cycle, while annealing temperatures of 200 C (for 24 hours), 300 C (six hours), and 400 C (six hours) were employed. The most likely candidate for the E(c) -0.71 eV electron trap observed in the 200 keV proton irradiated samples may be due to GaAs antisite, while the observed E(v) +0.18 eV hole trap has been attributed to the gallium vacancy related defect. The obtained results show that periodic annealing in the considered case does not offer any advantages over the one time annealing process.

Li, S. S.↗
NASA NTRS1976

Formation, structure, and orientation of gold silicide on gold surfaces

The formation of gold silicide on Au films evaporated onto Si(111) surfaces is studied by Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED). Surface condition, film thickness, deposition temperature, annealing temperature, and heating rate during annealing are varied. Several oriented crystalline silicide layers are observed.

Green, A. K.↗
DOE OSTI2023

High‐Throughput Study of Amorphous Stability and Optical Properties of Superlattice‐Like Ge–Sb–Te Thin Films

A high‐throughput ion beam sputtering system is used to synthesize compositional gradient superlattice‐like (SLL) thin film libraries of Ge–Sb–Te alloys over the entire phase diagram. Here, the optical properties and structural evolution of the Ge–Sb–Te combinatorial SLL thin film are investigated. A systematic screening over the annealing temperature, annealing time, and modulation period has elucidated the critical factors that affect the stability of the metastable phase and optical properties. It is found that amorphous stability and optical constant are highly dependent on the modulation period and chemical composition of the thin film. This data‐driven approach offers new perspectives for accelerating the development of new materials with excellent optical and amorphous stability and for exploring their mechanisms, by greatly expanding the dataset of Ge–Sb–Te alloys with SLL structures through high‐throughput experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Temperature and processing effects on lithium ion conductivity of solution‐deposited lithium zirconium phosphate (LiZr 2 P 3 O 12 ) thin films

Abstract Lithium zirconium phosphate (LiZr 2 P 3 O 12 ) thin films have been prepared on platinized silicon substrates via a chemical solution deposition approach with processing temperatures between 700°C and 775°C. Films that were subject to a single high‐temperature anneal were found to crystallize at temperatures above 725°C. Crystallization was observed in films annealed after each deposited layer at 700°C and above. In both cases, grain size was found to increase with annealing temperature. Ion conductivity was found to increase with annealing temperature in singly annealed films. In per‐layer annealed films ion conductivity was found to initially increase then decrease with increasing annealing temperature. A maximum ion conductivity of 1.6 × 10 −6 S/cm was observed for the singly annealed 775°C condition, while a maximum ion conductivity of 5.8 × 10 −7 S/cm was observed for the 725°C per‐layer annealed condition. These results are consistent with an increasing influence of cross‐plane, internal interface resistance and vapor phase carrier loss in the per‐layer annealed samples. This work demonstrates that post‐deposition processing methods can strongly affect the ion conducting properties of LiZr 2 P 3 O 12 thin films.

Brummel, Ian A.↗
NASA NTRS1988

Annealing study of poly(etheretherketone)

Annealing of PEEK has been studied for two materials cold-crystallized from the rubbery amorphous state. The first material is a low molecular weight PEEK; the second is commercially available neat resin. Differential scanning calorimetry was used to monitor the melting behavior of annealed samples. The effect of thermal history on melting behavior is very complex and depends upon annealing temperature, residence time at the annealing temperature, and subsequent scanning rate. Thermal stability of both materials is improved by annealing, and for an annealing temperature near the melting point, the polymer can be stabilized against reorganization during the scan. Variations of density, degree of crystallinity, and X-ray long period were studied as a function of annealing temperature for the commercial material.

Cebe, Peggy↗
DOE OSTI2024

Effects of Post-sintering Annealing on (NdLa)-(FeCo)-B Magnets

A common limitation of La substitutions into (Nd, La) 2 Fe 14 B magnets is the reduction of the anisotropy field (H a ), which decreases magnet coercivity (H cj ). In this study, adding a small amount of Pr-Cu to a La-containing neo magnet may modify the grain boundary (GB), which can help recover a fraction of the degraded H cj . An optimal GB modification requires a carefully designed post-sinter heat treatment, which is the focus of this work on characterizing the effects of multi-step post-sintering annealing on the evolutions of microstructure and magnetic properties. We find that Nd and Cu concentrations at GBs and triple junctions (TJs) increase when the annealing temperatures are lowered. Annealing temperatures of 580°C and 480°C (near rare-earth-rich eutectic temperatures) enabled the development of a thick and continuous GB phase, which helps to magnetically decouple the grains, and, thus, enhance H cj . For the alloy with 25% Nd replaced by La, and with the addition of 7.5 wt.% of Pr 68 Cu 32 as GB modifier, the optimized multi-step post-sinter annealing improved the H cj from 4.8 kOe to 9 kOe.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Defect chemistry and characterization of (Hg, Cd)Te

Single crystal samples of phosphorus doped Hg sub 0.8 Cd sub 0.2 Te were anneald at temperatures varying from 450 C to 600 C in various Hg atmospheres. The samples were quenched to room temperature from the annealing temperatures. Hall effect and mobility measurements were performed at 77 K on all these samples. The results indicate the crystals to be p type for a total phosphorus concentration of 10 to the 19th power/cu cm in all the samples. The hole concentration at 77 K increases with increasing Hg pressures at 450 C and 500 C contrary to the observation in undoped crystals. Also, at low Hg pressures the concentration of holes in the phosphorus doped crystals is lower than in the undoped crystals. The hole concentration in all the samples is lower than the intrinsic carrier concentration at the annealing temperatures. The hole mobility in the doped crystals is similar to that in the undoped crystals. A defect model according to which phosphorus behaves as a single acceptor interstitially, occupying Te lattice sites while it acts as a single donor occupying Hg lattice sites was established. Equilibrum constants established for the incorporation of all the phosphorus species explain the experimental results

Vydyanath, H. R.↗
NASA NTRS2000

Substrate Preparations in Epitaxial ZnO Film Growth

Epitaxial ZnO films were grown on the two polar surfaces (O-face and Zn-face) of (0001) ZnO single crystal substrates using off-axis magnetron sputtering deposition. Annealing-temperature dependence of ZnO substrates was studied. ZnO films grown on sapphire substrates have also been investigated for comparison purposes and the annealing temperature of A1203 substrates is 1000 C. Substrates and films were characterized using photoluminescence (PL) spectrum, x-ray diffraction, atomic force microscope, energy dispersive spectrum, and electric transport measurements. It has been found that the ZnO film properties were different when films were grown on the two polarity surfaces of ZnO substrates and the A1203 substrates. An interesting result shows that high temperature annealing of ZnO single crystals will improve the surface structure on the O-face surface rather than the opposite surface. The measurements of homoepitaxial ZnO films indicate that the O-terminated surface is better for ZnO epitaxial film growth.

Zhu, Shen↗
NASA NTRS2023

Homogeneity Study of ZrC, NbC, and TaC Binary Carbide Fuels for the Application of Nuclear Thermal Propulsion

In alignment with NASA and DARPA goals, efforts towards Nuclear Thermal Propulsion (NTP) have increased in recent years. As progress is made, a main challenge still exists; the fuel in an NTP system must survive the extreme environment experienced during operating conditions. Three fuel forms have been studied including a ceramic-metallic matrix, a ceramic-ceramic matrix, and solid solution carbides. Solid solution carbides were studied previously as a fuel for NTP and was shown to be a promising technology; however, the programs were canceled before demonstration in an NTP engine test. Of the refractory metal carbides of interest, zirconium carbide (ZrC), niobium carbide (NbC) and tantalum carbide (TaC) were studied. ZrC, NbC, and TaC powders were consolidated in monocarbide (ZrC, NbC, TaC) and bi-carbide (ZrC-NbC, ZrC-TaC, NbC-TaC) forms using spark plasma sintering (SPS), with 50-50 mol% compositions of the bi-carbides of interest. The time and temperature conditions to achieve a completely homogeneous solid solution for the mixed carbides is of interest for NTP fuel applications, since this homogeneity is considered to be essential for this fuel form. Homogeneity is typically not achieved during sintering, as surface diffusion (predominant for sintering to near ideal density) tends to occur at lower temperatures than bulk volumetric diffusion (required for solute interdiffusion to achieve a homogeneous solid solution). High temperature isochronal annealing was performed to identify the conditions to achieve a chemically homogeneous sample. The solute interpenetration vs annealing temperature was quantified using energy dispersion spectroscopy (EDS) in a scanning electron microscope (SEM). X-ray diffraction (XRD) was used to accurately measure the phase stability and lattice parameter as a function of annealing conditions. The diffusion data from each sample was then used to determine self-diffusion coefficients for interdiffusion of the Nb, Zr, and Ta solutes and compared to existing literature values. The minimum annealing conditions to achieve complete chemical homogeneity for each carbide was determined.

nuclear thermal propulsion↗
DOE OSTI2020

Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

The evolution of defects due to high‐pressure annealing of magnesium ion‐implanted epitaxial GaN grown on high‐quality GaN substrates is investigated. Changes in the implant‐induced strain are quantified as a function of annealing temperature and time. After annealing at 1300 °C for 10 min, the implant‐induced strain is fully relieved and accompanied by the presence of extended defects such as basal plane stacking faults and prismatic loops. Approximately one‐third of the original implant‐induced strain remains after annealing at 700 °C, and 5% of the original strain remains at 1000 °C for 100 min. In all cases, nearly all of the recovered strain occurs within first few minutes of annealing. A prominent increase in the asymmetric (104) triple axis X‐ray rocking curve full width at 0.01 maximum (FW0.01M) is observed after annealing at 1300 °C for 10 min. After annealing at 1300 °C for 100 min, a subsequent decrease in FW0.01M is correlated with a reduction of the extended defect density from 4 × 10 8 to 3 × 10 7 cm −2 , determined through transmission electron microscope (TEM) measurements. Further reduction in the density of the extended defects by optimizing annealing temperature and time is expected to improve the performance of GaN‐based vertical power devices.

Wang, Yekan↗
NASA NTRS1998

Low-Temperature Friction-Stir Welding of 2024 Aluminum

Solid state friction-stir welding (FSW) has been demonstrated to involve dynamic recrystallization producing ultra-fine, equiaxed grain structures to facilitate superplastic deformation as the welding or joining mechanism. However, the average residual, equiaxed, grain size in the weld zone has ranged from roughly 0.5 micron to slightly more than 10 micron, and the larger weld zone grain sizes have been characterized as residual or static grain growth as a consequence of the temperatures in the weld zone (where center-line temperatures in the FSW of 6061 Al have been shown to be as high as 480C or -0.8 T(sub M) where T(sub M) is the absolute melting temperature)). In addition, the average residual weld zone grain size has been observed to increase near the top of the weld, and to decrease with distance on either side of the weld-zone centerline, an d this corresponds roughly to temperature variations within the weld zone. The residual grain size also generally decreases with decreasing FSW tool rotation speed. These observations are consistent with the general rules for recrystallization where the recrystallized grain size decreases with increasing strain (or deformation) at constant strain rate, or with increasing strain-rate, or with increasing strain rate at constant strain; especially at lower ambient temperatures, (or annealing temperatures). Since the recrystallization temperature also decreases with increasing strain rate, the FSW process is somewhat complicated because the ambient temperature, the frictional heating fraction, and the adiabatic heating fraction )proportional to the product of strain and strain-rate) will all influence both the recrystallization and growth within the FSW zone. Significantly reducing the ambient temperature of the base metal or work pieces to be welded would be expected to reduce the residual weld-zone grain size. The practical consequences of this temperature reduction would be the achievement of low temperature welding. This study compares the residual grain sizes and microstructures in 2024 Al friction-stir welded at room temperature (about 30C and low temperature (-30C).

Benavides, S.↗
NASA NTRS2008

In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions

The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell

Quantum Efficiency↗