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At least 55 records · Page 3

Thermoplastic polyimide NEW-TPI (trademark)

Thermal and rheological properties of a commercial thermoplastic polyimide, NEW-TPI (trademark), were characterized. The as-received material possesses initially a transient crystallite form with a bimodal distribution in peak melting temperatures. After the melting of the initial crystallite structure, the sample can be recrystallized by various thermal treatments. A bimodal or single modal melting peak distribution is formed for annealing temperatures below or above 360 C, respectively. The recrystallized crystallinities are all transient in nature. The polymers are unable to be recrystallized after being subjected to elevated temperature annealing above 450 C. The recrystallization mechanism was postulated, and a simple kinetics model was found to describe the behavior rather satisfactory under the conditions of prolonged thermal annealing. Rheological measurements made in the linear viscoelastic range support the evidence observed in the thermal analysis. Furthermore, the measurements sustain the manufacturer's recommended processing window of 400 to 420 C for this material.

Hou, Tan-Hung↗

Characterization of thermoplastic polyimide NEW-TPI

Thermal and rheological properties of a commercial thermoplastic polyimide, NEW-TPI, were characterized. The as-received material possesses initially a transient crystallite form with a bimodal distribution in peak melting temperatures. After the meltings of the initial crystallite structures, the sample can be recrystallized by various thermal treatments. A bimodal or single-modal melting peak distribution is formed for annealing temperatures below or above 360 C, respectively. The recrystallized crystallinities are all transient in nature. The polymers are unable to be recrystallized after being subjected to elevated temperature annealing above 450 C. The recrystallization mechanism was postulated, and a simple kinetics model was found to describe the behavior satisfactorily under conditions of prolonged thermal annealing.

Hou, T. H.↗

Purification Procedures for Single-Wall Carbon Nanotubes

This report summarizes the comparison of a variety of procedures used to purify carbon nanotubes. Carbon nanotube material is produced by the arc process and laser oven process. Most of the procedures are tested using laser-grown, single-wall nanotube (SWNT) material. The material is characterized at each step of the purification procedures by using different techniques including scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM), Raman, X-ray diffractometry (XRD), thermogravimetric analysis (TGA), nuclear magnetic resonance (NMR), and high-performance liquid chromatography (HPLC). The identified impurities are amorphous and graphitic carbon, catalyst particle aggregates, fullerenes, and hydrocarbons. Solvent extraction and low-temperature annealing are used to reduce the amount of volatile hydrocarbons and dissolve fullerenes. Metal catalysts and amorphous as well as graphitic carbon are oxidized by reflux in acids including HCl, HNO3 and HF and other oxidizers such as H2O2. High-temperature annealing in vacuum and in inert atmosphere helps to improve the quality of SWNTs by increasing crystallinity and reducing intercalation.

Gorelik, Olga P.↗

Effect of minor reactive metal additions on fracture toughness of iron: 12-percent nickel alloy at-196 deg and 25 deg C

The slow bend precracked Charpy fracture toughness and tensile behavior of arc-melted and hot-rolled Fe-12Ni alloys containing up to 4 atomic percent reactive metal additions were determined at -196 C and 25 C after water quenching from three annealing temperatures. The fracture toughness of Fe-12Ni at -196 C was improved by small amounts of Al, Ce, Hf, La, Nb, Ta, Ti, V, Y, and Zr, but not by Si. Cryogenic toughness was improved up to 7.5 times that of binary Fe-12Ni and varied with the reactive metal, its concentration, and the annealing temperature.

Witzke, W. R.↗

Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

Kang, C. H.↗

Elastic Properties in Tension and Shear of High Strength Nonferrous Metals and Stainless Steel - Effect of Previous Deformation and Heat Treatment

A resume is given of an investigation of the influence of plastic deformation and of annealing temperature on the tensile and shear elastic properties of high strength nonferrous metals and stainless steels in the form of rods and tubes. The data were obtained from earlier technical reports and notes, and from unpublished work in this investigation. There are also included data obtained from published and unpublished work performed on an independent investigation. The rod materials, namely, nickel, monel, inconel, copper, 13:2 Cr-Ni steel, and 18:8 Cr-Ni steel, were tested in tension; 18:8 Cr-Ni steel tubes were tested in shear, and nickel, monel, aluminum-monel, and Inconel tubes were tested in both tension and shear. There are first described experiments on the relationship between hysteresis and creep, as obtained with repeated cyclic stressing of annealed stainless steel specimens over a constant load range. These tests, which preceded the measurements of elastic properties, assisted in devising the loading time schedule used in such measurements. From corrected stress-set curves are derived the five proof stresses used as indices of elastic or yield strength. From corrected stress-strain curves are derived the secant modulus and its variation with stress. The relationship between the forms of the stress-set and stress-strain curves and the values of the properties derived is discussed. Curves of variation of proof stress and modulus with prior extension, as obtained with single rod specimens, consist in wavelike basic curves with superposed oscillations due to differences of rest interval and extension spacing; the effects of these differences are studied. Oscillations of proof stress and modulus are generally opposite in manner. The use of a series of tubular specimens corresponding to different amounts of prior extension of cold reduction gave curves almost devoid of oscillation since the effects of variation of rest interval and extension spacing were removed. Comparison is also obtained between the variation of the several properties, as measured in tension and in shear. The rise of proof stress with extension is studied, and the work-hardening rates of the various metals evaluated. The ratio between the tensile and shear proof stresses for the various annealed and cold-worked tubular metals is likewise calculated. The influence of annealing or tempering temperature on the proof stresses and moduli for the cold-worked metals and for air-hardened 13:2 Cr-Ni steel is investigated. An improvement of elastic strength generally is obtained, without important loss of yield strength, by annealing at suitable temperature. The variation of the proof stress and modulus of elasticity with plastic deformation or annealing temperature is explained in terms of the relative dominance of three important factors: namely, (a) internal stress, (b) lattice-expansion or work-hardening, and (c) crystal reorientation. Effective values of Poisson's ratio were computed from tensile and shear moduli obtained on tubular specimens. The variation of Poisson's ratio with plastic deformation and annealing temperature is explained in terms of the degree of anisotropy produced by changes of (a) internal stress and (b) crystal orientation.

METALS - ELASTICITY↗

Effects of Thermal Treatment on Tensile Creep and Stress-Rupture Behavior of Hi-Nicalon SiC Fibers

Tensile creep and stress-rupture studies were conducted on Hi-Nicalon SiC fibers at 1200 and 1400 C in argon and air. Examined were as-received fibers as well as fibers annealed from 1400 to 1800 C for 1 hour in argon before testing. The creep and rupture results for these annealed fibers were compared to those of the as-received fibers to determine the effects of annealing temperature, test temperature, and test environment. Argon anneals up to 1500 C degrade room temperature strength of Hi-Nicalon fibers, but improve fiber creep resistance in argon or air by as much as 100% with no significant degradation in rupture strength. Argon anneals above 1500 C continue to improve fiber creep resistance when tested in argon, but significantly degrade creep resistance and rupture strength when tested in air. Decrease in creep resistance in air is greater at 1200 C than at 1400 C. Mechanisms are suggested for the observed behavior.

Yun, H. M.↗

Electron-spin-resonance studies of vapor-grown carbon fibers

The effects of annealing temperature and fiber diameter on the degree of disorder of vapor-grown carbon fibers were investigated by analyzing the electron-spin-resonance (ESR) line shapes of fibers annealed at six various temperatures up to 3375 K. The diameter of fibers, grown from methane gas, ranged from 10 to 140 microns with most fibers between 20 and 50 microns. It was found that the degree of disorder of vapor-grown fibers decreases upon annealing to higher temperature; standard angular deviation between the fiber axis and the crystallite basal planes could vary from 35 deg (for annealing temperature of 2275 K) to 12 deg (for 3375 K). With respect to fiber diameter, order parameters were found to be higher for fibers of smaller diameters.

Marshik, B.↗

Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

Jones, C. E.↗

New electron trap in p-type Czochralski silicon

A new electron trap (acceptor level) was discovered in p-type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 C annealing increases the trap concentration while high-temperature annealing (1100-1200 C) leads to the virtual elimination of the trap. The new trap is not observed in either float-zone or n-type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.

Mao, B.-Y.↗

Deformation and annealing response of TD-nickel chromium sheet

The deformation and annealing response of TD-nickel chromium (TD-NiCr) 0.1 inch thick sheet was examined using various cold-rolling and annealing treatments. Upon annealing (above 816 C (1500 F), the as-received material was converted from an initially ultra-fine grain size (average grain dimension 0.51 micron) to a large grain structure. Increases in grain size by a factor of 100 to 200 were observed for this transformation. However, in those material states where the large grain transformation was absent, a fine grain recrystallized structure formed upon annealing (above 732 C (1350 F)). The deformation and annealing response of TD-NiCr sheet was evaluated with respect to the processing related variables as mode and severity of deformation and annealing temperature. Results indicate that the large grain transformation, classical primary recrystallization occurs. Using selected materials produced during the deformation and annealing study, the elevated temperature tensile properties of TD-NiCr sheet were examined in the temperature range 593 C (1100 F) to 1093 C (2000 F). It was observed that the elevated temperature tensile properties of TD-NiCr sheet could be optimized by the stabilization of a large grain size in this material using the cold working and/or annealing treatments developed during the present investigation.

Kane, R. D.↗

Preliminary low temperature electron irradiation of triple junction solar cells

JPL has routinely performed radiation testing on commercial solar cells and has also performed LILT testing to characterize cell performance under far sun operating conditions. This research activity was intended to combine the features of both capabilities to investigate the possibility of any room temperature annealing that might influence the measured radiation damage. Although it was not possible to maintain the test cells at a constant low temperature between irradiation and electrical measurements, it was possible to obtain measurements with the cell temperature kept well below room temperature.

annealing↗

An electron microscopy examination of primary recrystallization in TD-nickel.

Primary recrystallization in TD-nickel 1 in. bar has previously been regarded as the process by which the initial fine grain structure is converted to a coarse grain size (increases in grain size by 500 times) under suitable deformation and annealing conditions. This process is dependent on deformation mode. While it occurs readily after rolling transverse to the bar axis and annealing (800 C), it is completely inhibited by longitudinal rolling and swaging deformations, even for very high (1320 C) annealing temperatures. A transmission electron microscopy examination of deformation and annealing substructures indicates that primary recrystallization in TD-nickel 1 in. bar actually occurs on the sub-light optical level, to produce a grain structure similar in size to the initial fine grained state.

Petrovic, J. J.↗

Infrared Spectra and Optical Constants of Nitrile Ices Relevant to Titan's Atmosphere

Spectra and optical constants of nitrile ices known or suspected to be in Titan?s atmosphere have been determined from 2.0 to 333.3 microns (approx.5000 to 30/cm). These results are relevant to the ongoing modeling of Cassini CIRS observations of Titan?s winter pole. Ices studied were: HCN, hydrogen cyanide; C2N2, cyanogen; CH3CN, acetonitrile; C2H5CN, propionitrile; and HC3N, cyanoacetylene. Optical constants were calculated, using Kramers-Kronig analysis, for each nitrile ice?s spectrum measured at a variety of temperatures, in both the amorphous- and crystalline phases. Spectra were also measured for many of the nitriles after quenching at the annealing temperature and compared with those of annealed ices. For each of these molecules we also measured the real component, n, of the refractive index for amorphous and crystalline phases at 670 nm. Several examples of the information contained in these new data sets and their usefulness in modeling Titan?s observed features will be presented (e.g., the broad emission feature at 160/cm; Anderson and Samuelson, 2011).

Anderson, Carrie↗

Forward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells

The preliminary results of a novel approach to low-temperature annealing of previously irradiated indium phosphide and gallium arsenide solar cells are reported. The technique is based on forward-biased current annealing. The two types of III-V solar cells were irradiated with 1-MeV electrons to a fluence level of (1-10) x 10 to the 14th electrons/sq cm. Several annealing attempts were made, varying all conditions. Optimum annealing was achieved when cells were injected with minority currents at a constant 90 C. The current density for each type of cell was also determined. Significant recovery of degraded parameters was achieved in both cases. However, the InP cell recovery notably exceeded the recovery in GaAs cells. The recovery is thought to be caused by current-stimulated reordering of the radiator-induced displacement damage. Both types of cell were then subjected to several cycles of irradiation and annealing. The results were also very promising. The significant recovery of degraded cell parameters at low temperature might play a major role in considerably extending the end of life of future spacecraft.

Michael, Sherif↗

The effect of processing conditions on the GaAs/plasma-grown insulator interface

The effect of processing conditions on the interface state density was evaluated from C-V measurements on metal-oxide-semiconductor capacitors. The optimum processing conditions for the minimum surface state density was found to be related to the postoxidation annealing temperature and time, and was independent of chemical treatments prior to oxidation. Annealing at the optimum condition (i.e., at 350 C for 1 h in either nitrogen or hydrogen gas, with or without an aluminum pattern on the oxide) reduces the fast surface state density by about one order of magnitude. By using a nitrogen/oxygen plasma, the static dielectric constant of the oxide decreased as the N/O ratio was increased, and nitrogen was incorporated into the oxide. In addition, the fast surface state density was reduced as a result of this nitridation process.

Hshieh, F. I.↗

TiO2 film properties as a function of processing temperature, volume 3

Thin film TiO2 was produced at 150 C by chemical vapor deposition using hydrolysis of tetraisopropyl titanate. Films were amorphous as grown, but annealing in air caused crystallization, with anatase formed beginning at 350 C and rutile at 700 C. Density and index of refraction increased substantially with increasing anneal temperature, while etch susceptibility in HF and H2SO4 decreased. Comparison with literature data showed two groups of processes. One group yields films having properties that gradually approach those of rutile with increasing process temperature. The other group gives rutile directly at moderate temperatures. Deposition of amorphous film followed by etching and annealing is suggested as a means for pattern definition.

Fitzgibbons, E. T.↗

Radiation damage in lithium-counterdoped n/p silicon solar cells

Lithium counterdoped n+/p silicon solar cells were irradiated with 1 MV electrons and their post irradiation performance and low temperature annealing properties were compared to that of the 0.35 ohm cm control cells. Cells fabricated from float zone and Czochralski grown silicon were investigated. It was found that the float zone cells exhibited superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Room temperature and 60 C annealing studies were conducted. The annealing was found to be a combination of first and second order kinetics for short times. It was suggested that the principal annealing mechanism was migration of lithium to a radiation induced defect with subsequent neutralization of the defect by combination with lithium. The effects of base lithium gradient were investigated. It was found that cells with negative base lithium gradients exhibited poor radiation resistance and performance compared to those with positive or no lithium gradients; the latter being preferred for overall performance and radiation resistance.

Hermann, A. M.↗