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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1970

Inner-shell ionizations by proton impact

Inner-shell ionizations by proton impact calculated for cross section using impulse approximation model, comparing results with Born approximations

Garcia, J. D.↗
NASA NTRS1991

Scattering of electromagnetic waves from a half-space of randomly distributed discrete scatterers and polarized backscattering ratio law

The effective-medium approximation is applied to investigate scattering from a half-space of randomly and densely distributed discrete scatterers. Starting from vector wave equations, an approximation, called effective-medium Born approximation, a particular way, treating Green's functions, and special coordinates, of which the origin is set at the field point, are used to calculate the bistatic- and back-scatterings. An analytic solution of backscattering with closed form is obtained and it shows a depolarization effect. The theoretical results are in good agreement with the experimental measurements in the cases of snow, multi- and first-year sea-ice. The root product ratio of polarization to depolarization in backscattering is equal to 8; this result constitutes a law about polarized scattering phenomena in the nature.

Zhu, P. Y.↗
NASA NTRS2001

A Hydrodynamic Theory for Spatially Inhomogeneous Semiconductor Lasers: Microscopic Approach

Starting from the microscopic semiconductor Bloch equations (SBEs) including the Boltzmann transport terms in the distribution function equations for electrons and holes, we derived a closed set of diffusion equations for carrier densities and temperatures with self-consistent coupling to Maxwell's equation and to an effective optical polarization equation. The coherent many-body effects are included within the screened Hartree-Fock approximation, while scatterings are treated within the second Born approximation including both the in- and out-scatterings. Microscopic expressions for electron-hole (e-h) and carrier-LO (c-LO) phonon scatterings are directly used to derive the momentum and energy relaxation rates. These rates expressed as functions of temperatures and densities lead to microscopic expressions for self- and mutual-diffusion coefficients in the coupled density-temperature diffusion equations. Approximations for reducing the general two-component description of the electron-hole plasma (EHP) to a single-component one are discussed. In particular, we show that a special single-component reduction is possible when e-h scattering dominates over c-LO phonon scattering. The ambipolar diffusion approximation is also discussed and we show that the ambipolar diffusion coefficients are independent of e-h scattering, even though the diffusion coefficients of individual components depend sensitively on the e-h scattering rates. Our discussions lead to new perspectives into the roles played in the single-component reduction by the electron-hole correlation in momentum space induced by scatterings and the electron-hole correlation in real space via internal static electrical field. Finally, the theory is completed by coupling the diffusion equations to the lattice temperature equation and to the effective optical polarization which in turn couples to the laser field.

Li, Jianzhong↗
NASA NTRS2002

Microscopic Foundation and Simulation of Coupled Carrier-Temperature Diffusions in Semiconductor Lasers

A typical semiconductor-based optoelectronic device, such as a diode laser, consists of three subsystems: an optical field, an electron-hole plasma (EHP), and a host crystal lattice. The physics of such a device involves the interplay of optical, electrical and thermal processes. A proper description of such a device requires that all three processes are treated on equal footing and in a self-consistent fashion. Furthermore, since a semiconductor laser has intrinsic spatial inhomogeneity, such a self-consistency naturally leads to a set of partial differential equations in space and time. There is a significant lacking of research interest and results on the transport aspects of optical devices in the literature with only a few exceptions. Even the most important carrier diffusion coefficient has not been properly derived and studied so far for optically excited plasma, while most of the work adopted results from electronics community where heavily doped semiconductors with mainly one type of carriers are dealt with. The corresponding transport equation for plasma energy or temperature has received even less attention. In this talk we describe our recent results on such a self-consistent derivation of temperature and carrier-density diffusion equations coupled with the lasing process. Starting from the microscopic semiconductor Bloch equations (SBEs) including the Boltzmann transport terms in the distribution function equations for electrons and holes, we derived a closed set of diffusion equations for carrier densities and temperatures with self-consistent coupling to Maxwell's equation and to an effective optical polarization equation. The coherent many-body effects are included within the screened Hartree-Fock approximation, while scatterings are treated within the second Born approximation including both the in- and out-scatterings. Microscopic expressions for electron-hole (e-h) and carrier-LO (c-LO) phonon scatterings are directly used to derive the momentum and energy relaxation rates. These rates expressed as functions of temperatures and densities lead to microscopic expressions for self- and mutual-diffusion coefficients in the coupled density-temperature diffusion equations. Approximations for reducing the general two-component description of the electron-hole plasma (EHP) to a single-component one are discussed. In particular, we show that a special single-component reduction is possible when e-h scattering dominates over c-LO phonon scattering. The ambipolar diffusion approximation is also discussed and we show that the ambipolar diffusion coefficients are independent of e-h scattering, even though the diffusion coefficients of individual components depend sensitively on the e-h scattering rates. Our discussions lead to new perspectives into the roles played in the single-component reduction by the electron-hole correlation in momentum space induced by scatterings and the electron-hole correlation in real space via internal static electrical field. Finally, the theory is completed by coupling the diffusion equations to the lattice temperature equation and to the effective optical polarization which in turn couples to the laser field. The equations derived above are implemented in various limiting cases to a typical diode laser to study the consequences of nonlinear diffusion and the cross diffusion terms on laser behavior, especially the dynamic behavior of a diode laser under modulation. Detailed results will be presented by comparing with the standard rate equation results.

Li, J.↗
NASA NTRS1983

Scattering of electromagnetic waves from a half space of densely distributed dielectric scatterers

The scattering of a plane wave obliquely incident on a half space of densely distributed spherical dielectric scatterers is studied. The quasi-crystalline approximation is applied to truncate the hierarchy of multiple scattering equations, and the Percus-Yevick and the Verlet-Weis results are used to represent the pair distribution function. The coherent reflected wave is studied with these approximations. The incoherent scattered wave is calculated with the distorted Born approximation. In the low-frequency limit, closed-form expressions are obtained for the effective propagation constants, the coherent reflected wave, and the bistatic scattering coeficients. Results at higher frequencies are calculated numerically. The advantage of the present approach is that, in the low-frequency limit, it reproduces the effects of specular reflection, Fresnel reflection coefficient, Brewster angle, and Clausius-Mosotti relation. In addition to the classical results, the bistatic scattering coefficients are also calculated. The theory is also applied to match backscattering data from dry snow at microwave frequencies.

Tsang, L.↗
NASA NTRS2003

Microscopic Modeling of Intersubband Resonances in InAs/AlSb Quantum Wells

Linear absorption spectra from intersubband resonance in InAs/AlSb quantum wells are analyzed theoretically using the intersubband semiconductor Bloch equation approach. Our model goes beyond the Hartree-Fock approximation and treats particle-particle correlations under the second Born approximation. Electron-electron and -LO phonon scatterings from such a treatment describe intrinsic line broadening to the intersubband resonance. Electron subbands are determined self-consistently with a spurious-state-free 8-band k.p Hamiltonian under the envelope function approximation. To compare with experimental measurements, we also included line broadening due to electron-interface roughness scattering. Excellent agreement was achieved for temperature-dependent absorption spectra in the mid-infrared frequency range, after taking into careful account the interplay of material parameters, nonparabolicity in bandstructure, and many-body effects.

Li, Jian-Zhong↗
NASA NTRS2010

L Band Brightness Temperature from Forest: Comparison of Approximate Techniques

In this paper, three approximate physical microwave radiometry models have been used to calculate brightness temperatures from a forest canopy at L-band. These models are (1) tau-omega model (zero order scattering approximation to radiative transfer equations), (2) successive order of scattering model up to first order (first order scattering approximation to the radiative transfer equations), and (3) Peak technique utilizing the active solution obtained from the Distorted Born Approximation (DBA). These models are physically-based and treat vegetation as a layer of discrete scatterers over a rough surface. Vegetation components within the canopy are represented by canonical shapes such as dielectric discs and cylinders. The tau-omega model is based on a zero-order solution to the radiative transfer (RT) equations. The model ignores scattering except for the effect of the scatterers in the attenuation of the emission through the vegetation. Application of the tau-omega model to data acquired during airborne and ground-based campaigns over the years has solidified scientific understanding of microwave interactions with different landscapes. In particular, shrubland, grasslands, agricultural crops, and light to moderate vegetation have been investigated. Its applicability to areas with a significant tree fraction is unknown. The first order scattering model is based on an iterative solution of the RT equation up to the first order. The first order solution is obtained by substituting the zeroth-order solution into the scattering source term and then solving the resulting radiative transfer equations. This formulation adds a new scattering term to the tau-omega model. It represents emission by particles in the layer and emission by the ground that is scattered once by particles in the layer. The resulting model represents an improvement over the standard zero-order solution (the tau-omega model) since it accounts for the scattered vegetation and ground radiation that can have a pronounced effect on the observed brightness temperature. The third model is based on the Peake formulation in conjunction with the DBA. The procedure for calculation of forest emission is accomplished by first calculating the bistatic scattering cross section for each type of scatterer, then by using the DBA to calculate specular albedo of the ground and the diffused albedo of the layer. Once the albedos are determined, Peake s principle relating active and passive problems can be used to determine the effective emissivity of the forest layer.

Kurum, Mehmet↗
NASA NTRS1983

Ultrasonic attenuation of a void-containing medium for very long wavelengths

Ultrasonic longitudinal through-thickness attenuation in an isotropic medium due to scattering by randomly distributed voids is considered analytically. The attenuation is evaluated on the assumption of no interaction between voids. The scattered power is assumed to be entirely lost, thus accounting for the ultrasonic attenuation. The scattered power due to the presence of a void is described in terms of the scattering cross section of the void. An exact solution exists for the scattering cross section of a spherical void. An approximate solution for the scattering cross section of an ellipsoidal void is developed based on the so-called Born approximation commonly used in quantum mechanics. This approximate solution is valid for k sub p a sub i 1, where k sub p is the wave number of the incident longitudinal wave and a sub i is the largest dimension of the void. It is found that the shape of the void has negligible effect on the scattering cross section and that only the volume of the void is important. Thus, it is noted that in cases where k sup p a sub i 1, the exact scattering cross section of a spherical void having the same volume as an arbitrarily shaped void can be used for evaluating ultrasonic attenuation.

Williams, J. H., Jr.↗
NASA NTRS1984

Ultrasonic attenuation of a void-containing medium for very long wavelengths

Ultrasonic longitudinal through-thickness attenuation in an isotropic medium due to scattering by randomly distributed voids is considered analytically. The attenuation is evaluated on the assumption of no interaction between voids. The scattered power is assumed to be entirely lost, thus accounting for the ultrasonic attenuation. The scattered power due to the presence of a void is described in terms of the scattering cross section of the void. An exact solution exists for the scattering cross section of a spherical void. An approximate solution for the scattering cross section of an ellipsoidal void is developed based on the so-called Born approximation commonly used in quantum mechanics. This approximate solution is valid for k sub p a sub i much less than 1, where k sub p is the wave number of the incident longitudinal wave and a sub i is the largest dimension of the void. It is found that the shape of the void has negligible effect on the scattering cross section and that only the volume of the void is important. Thus, it is noted that in cases where k sub p a sub i is much less than 1, the exact scattering cross section of a spherical void having the same volume as an arbitrarily shaped void can be used for evaluating ultrasonic attenuation. Previously announced in STAR as N83-28466

Williams, J. H., Jr.↗
NASA NTRS1988

Electromagnetic wave probing of Earth's environment

Polarimetric radar backscattering from anisotropic Earth terrain such as snow-covered ice fields and vegetation fields with row structures provides a challenging modeling problem from the electromagnetic wave point of view. Earth terrain covers are modeled as random media characterized by different dielectric constants and correlation functions. A three-layer model will be used to simulate a vegetation field or a snow-covered ice field with the top layer being snow or leaves, the middle layer being ice of trunks, and the bottom layer being sea water or ground. The volume scattering effects of snow-covered sea ice are studied with a three-layer random medium model for microwave remote sensing. The strong fluctuation theory and the bilocal approximation are applied to calculate the effective permittivities for snow and sea ice. The wave scattering theory in conjunction with the distorted Born approximation is then used to compute bistatic coefficients and backscattering cross sections. Theoretical results are illustrated by matching experimental data for dry snow-covered thick first-year sea ice at Point Barrow. The results derived can also be applied to the passive remote sensing by calculating the emissivity from the bistatic scattering coefficients.

Kong, Jin AU↗
NASA NTRS1983

Electromagnetic backscattering from a layer of vegetation - A discrete approach

Electromagnetic backscattering from a layer of vegetation over a flat lossy ground is studied. The vegetated region is composed of leaves which are modeled by lossy circular dielectric discs with prescribed orientation statistics. The mean field in the layer is computed by using the Foldy approximation and a two-variable technique which is valid for small fractional volume. Simple expressions are given for the skin depth of the mean wave. Following this, the distorted Born approximation is used to calculate the co-polarized and cross polarized backscattering coefficients. These are then computed as a function of angle of incidence for different layer depths and leaf configurations.

Lang, R. H.↗
NASA NTRS1981

Electromagnetic backscattering from a sparse distribution of lossy dielectric scatterers

Electromagnetic backscattering from a sparse distribution of lossy dielectric particles having random orientation and position is studied. The paper begins by using the Foldy approximation to find an equation for the mean field. From this equation, an effective permittivity for the scattering medium is obtained. The correlation of the scattered field is found by employing the distorted Born approximation, i.e., particles embedded in the effective medium are assumed to be single scatterers. The above method is then used to find the backscattering coefficients from a leaf canopy. The leaf canopy is modeled by a half space of dielectric discs that are small in comparison to a wavelength. Numerical results show that the depolarized cross section is a sensitive function of leaf inclination angle statistics.

Lang, R. H.↗
NASA NTRS1971

Analytic cross sections for 1 1S, to 1 1S to 2 1S, 1 1S to 2 1P transitions in helium by electron impact

The 1 1s yields 1 1s elastic and 1 1s yields 2 1s and 1 1s yields 2 excitation cross sections of Helium atoms by collision with a charged particle are obtained as analytic functions of incident velocity. The first order time dependent scattering theory is used. Numerical values of electron -He cross sections are obtained for incident energies in the range 30 eV to 800 eV and compared with earlier Born approximation calculations and with available experimental data. It is found that at 100 eV and above, the present results are in good agreement with the experimental results. They are also closer to the experimental results than the corresponding Born calculations.

Sukumar, C. V.↗