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At least 55 records · Page 3

Advanced manufacturing of 3D custom boron-carbide collimators designed for complex environments for neutron scattering

Scattered-beam collimation is a very useful method to reduce unwanted backgrounds and to boost the desired sample signal instead. This approach is of particular interest for samples contained within a complex environment that gives rise to much unwanted parasitic scatter. As neutron scattering instrument and techniques advances, small samples are becoming of more and more interest, which necessitates optimized collimation. Here, in this work, we describe a concept for the design and fabrication of advanced scattered-beam collimation 3D printed from B 4 C specifically tailored for samples contained within a complex environment. This concept is demonstrated through the use of a diamond anvil cell for high pressure experimentation, a technique that very typically requires small samples. The collimators here are designed through a modeling procedure via Monte Carlo neutron ray tracing that encompasses the entire system: the instrument, the complex environment and the collimator. Since the first approach of simply scaling up of the print-size was not successful, a novel concept of a multi-part alternate-blade collimator was developed. This approach addresses printing constraints but gives greater flexibility in design. Its performance is computationally compared against an unprintable progressively tighter blade collimator to assess the effect of alternating blades. No strong difference was observed. Its performance was validated through experimentation at the Spallation Neutron Source. The results emphasize the critical importance of ultra-high precision alignment while showing good overall agreement between simulation and experiment and underscore the feasibility of the method and its real-world application.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Effect of substrate temperature on sputter-deposited boron carbide films

Sputter deposition of B4C films with tailored physical properties remains a challenge. Here, we systematically study how substrate temperature influences the properties of B4C films deposited by direct current magnetron sputtering onto planar substrates held at temperatures in the range of 100-510°C. Results show that all films are amorphous stoichiometric B4C, with low O content of ~1 at. %. Films deposited onto substrates at 100°C exhibit high compressive residual stress and decreased mechanical properties. Therefore, for elevated substrate temperatures in the range of 180-510°C, film mass density, surface roughness, Young’s modulus, and hardness are weakly dependent on substrate temperature. However, in this temperature range, an increase in substrate temperature leads to larger residual compressive stress accompanied by a corresponding reduction in the concentration of nanoscale inhomogeneities. At least for the landing atom ballistics conditions studied here, a substrate temperature range of ~185-250°C is optimum for growing films with near-zero intrinsic residual stress. The overall weak substrate temperature dependence of film properties revealed in this work is favorable for the development of a robust deposition process, particularly for the case of deposition onto non-planar substrates where temperature control is often challenging.

36 MATERIALS SCIENCE↗

Magnetron sputter deposition of boron carbide in Ne and Ar plasmas

Conventional magnetron sputter deposition of B 4 C uses Ar as the working gas. In this report we explore the magnetron sputter deposition of B 4 C with a Ne plasma, which is expected to exhibit larger sputtering yields than Ar. We study properties of films deposited with different substrate tilt angles with the magnetron source operated in either direct-current (DC) or radio-frequency (RF) mode in an Ar or Ne plasma. Results show that the B 4 C film properties are determined by a combination of sputtering ballistics and effects of the working gas on the plasma discharge and gas phase scattering of depositing species flux. At constant discharge power, deposition rates for Ar and Ne plasmas are similar, which is attributed to balancing effects of a higher ballistic sputtering yield of Ne and lower ion flux to the target. Both depositing B and C neutral species and bombarding ions have higher energies for the case of Ne plasmas. Films deposited with the RF-driven Ne plasma exhibit a uniform non-columnar structure, lowest oxygen impurity content, and highest mass density and mechanical properties at a cost of Ne incorporation and larger compressive residual stress.

36 MATERIALS SCIENCE↗

Effects of hydrogen on sputter-deposited boron carbide films

Sputter deposition of B 4 C films requires precise control over the microstructure and the nucleation and growth of nodular defects. Here, we study the properties of B 4 C films deposited with substrate holder temperatures of 250, 450, or 510 °C and different substrate tilt angles by direct-current magnetron sputtering in either pure Ar or a mixture of 4% H 2 in Ar as the working gas. Results show that the addition of H 2 reduces the impedance of the plasma discharge, resulting in larger discharge currents at constant power, which is attributed to a lower ionization potential of H 2 than Ar. More importantly, films deposited with the H 2 containing plasma exhibit lower oxygen impurity incorporation, a lower density of nodular defects, and suppressed columnar microstructure. These results demonstrate the effectiveness of such a plasma doping approach to improve the properties of B 4 C films.

Wong, M. S. [Lawrence Livermore National Laborator↗

Radio-frequency magnetron sputter deposition of ultrathick boron carbide films

The deposition of thick B 4 C films with low residual stress by conventional direct-current magnetron sputtering is accompanied by the formation of dust particulates contaminating the target, chamber, and substrates and leading to the formation of nodular defects in films. Here, we demonstrate that the formation of particulates is greatly reduced during radio-frequency magnetron sputtering (RFMS). We systematically study properties of B 4 C films deposited by RFMS with a substrate temperature of 330 °C, a target-to-substrate distance of 10 cm, Ar working gas pressure in the range of 4.5–12.0 mTorr (0.6–1.6 Pa), and substrate tilt angles of 0°–80°. All films are x-ray amorphous. A columnar structure develops with increasing either Ar pressure or substrate tilt. For columnar films, the column tilt angle decreases with increasing Ar pressure, which we attribute to a corresponding increase in the width of the distribution of impact angles of deposition flux. In contrast to the Keller–Simmons rule, the deposition rate increases with increasing Ar pressure, which suggests a better coupling of the RF energy to the plasma processes that lead to target sputtering at higher pressures. There is a critical substrate tilt angle above which the total residual stress is close to zero. This critical substrate tilt angle is ~0° for an Ar pressure of 12 mTorr (1.6 Pa). The lower residual stress state, necessary for depositing ultrathick films, is characterized by a larger concentration of nanoscale inhomogeneities and decreased mechanical properties. Based on these results, RFMS deposition of 60-μm-thick B 4 C films is demonstrated.

36 MATERIALS SCIENCE↗

Empirical Investigation of Properties for Additive Manufactured Aluminum Metal Matrix Composites

Laser additive manufacturing with mixed powders of aluminum alloy and silicon carbide (SiC) or boron carbide (B4C) is investigated in this experiment. With various mixing ratios of SiC/Al to form metal matrix composites (MMC), their mechanical and physical properties are empirically investigated. Parameters such as laser power, scan speed, scan pattern, and hatching space are optimized to obtain the highest density for each mixing ratio of SiC/Al. The mechanical and thermal properties are systematically investigated and compared with and without heat treatment. It shows that 2 wt% of SiC obtained the highest strength and Young’s modulus. Graded composite additive manufacturing (AM) of MMC is also fabricated and characterized. Various types of MMC devices, such as heat sink using graded SiC MMC and grid type three-dimensional (3D) neutron collimators using boron carbide (B4C), were also fabricated to demonstrate their feasibility for applications.

36 MATERIALS SCIENCE↗

Full Technical Report: High-Rate Carbide Growth by Evaporation

Boron carbide (B 4 C) is an attractive inertial confined fusion (ICF) ablator and a unique ultra-hard material with numerous current and potential applications. What makes B 4 C attractive as an ablator is its relatively high density and the ability to form a stable glassy phase combined with excellent chemical and mechanical stability. Despite these advantages, the fabrication of B 4 C ablators has remained a challenge. Magnetron sputtering, our current frontrunner approach for B 4 C deposition, exhibits low deposition rates (< 2 μm/h) and undesirable nodular defects within the film structure that are believed to generate from the dusty plasma around the sputtering source. The goals of this project were to (1) establish alternative plasma-free, electron beam evaporation (EBE) capabilities for the deposition of thin films that are needed in mission-critical programs and; (2) demonstrate the feasibility to deposit B 4 C films at high rates by EBE in a bottom-up geometry and characterize their stoichiometry. In this feasibility study, we initially developed the capability to convert a general-use vacuum chamber into an electron beam evaporator as needed, or on demand. Then, we successfully used this setup to deposit films made of boron carbide and various other materials. By adjusting the deposition parameters and the evaporation source material, we were able to demonstrate the feasibility of reaching deposition rates as high as 8 μm/h, which is about 4 times the maximum rates obtained through sputtering methods. We predict that these values can still be further improved by implementing enhanced thermal control measures for the target source and optimizing electron beam parameters (ie. current, sweeping and frequency) since ceramic materials with similar densities to B 4 C can exhibit deposition rates of about twice this value. We anticipate that the skills and capabilities developed throughout this project will prove relevant not only to the HED and ICF campaigns but also to numerous existing and prospective applications focused on the development of ultra-hard carbide coatings. The fresh set of tools here developed will also facilitate the preparation and research on future new target materials of interest beyond B 4 C.

36 MATERIALS SCIENCE↗

Indirect additive manufacturing process for producing SiC—B4C—Si composites

A method for indirect additive manufacturing of an object constructed of boron carbide, silicon carbide, and free silicon, comprising: (i) producing a porous preform constructed of boron carbide and silicon carbide by an indirect ceramic additive manufacturing (ICAM) process in which particles of a powder mixture become bonded together with an organic binder, wherein the powder mixture comprises: a) boron carbide particles, and b) silicon carbide particles, wherein at least 80 vol % of the silicon carbide particles are larger than the boron carbide particles; and wherein the boron carbide and silicon carbide particles are each included in an amount of 40-60 wt. % of the powder mixture, provided that the foregoing amounts sum to at least 95 wt. %; (ii) subjecting the porous preform to a temperature of 500-900° C. to volatilize the organic binder; and (iii) infiltrating molten silicon into pores of the porous preform to produce the object.

Cramer, Corson L.↗

Mechanical responses of architected boron carbide-aluminum lattice composites fabricated via reactive metallic infiltration of hierarchical pore structures

The incorporation of micro and nanoscale constituents in a hierarchical order improves mechanical properties of bulk structures while inducing controlled deformation. However, these features have seldomly been applied to the fabrication of cermet materials due to manufacturing constraints. Here, overcoming previous limitations, boron carbide cermets with embedded aluminum lattices were produced using a combination of additive manufacturing and gelcasting techniques. Kelvin cell and octet truss scaffolds were printed, cast and burned out so the negative volume could be infiltrated with metal to form an architected cermet. Computed microtomography scans reveal full aluminum infiltration of the volume with high fidelity to the target architecture. Equibiaxial flexural tests showed localized crack propagation in lattice-reinforced cermets and that samples with imbedded architecture required nearly double the energy for complete failure. Overall, the addition of an internal aluminum lattice limits abrupt fracture of the composite and provides a method for tuning its mechanical response with architected ratios of metal to ceramic.

36 MATERIALS SCIENCE↗

Addressing amorphization and transgranular fracture of B 4 C through Si doping and TiB 2 microparticle reinforcing

Over the last two decades, many studies have contributed to improving our understanding of the brittle failure mechanisms of boron carbide and provided a road map for inhibiting the underlying mechanisms and improving the mechanical response of boron carbide. This paper provides a review of the design and processing approaches utilized to address the amorphization and transgranular fracture of boron carbide, which are mainly based on what we have found through 9 years of work in the field of boron carbides as armor ceramics.

36 MATERIALS SCIENCE↗