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Results for “CESIUM DIODE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1966

Bypass rod transfers heat developed in thermionic diode

In a thermionic diode, a cesium tube joining the emitter-collector area and the cesium reservoir is fitted with a copper bypass rod held in place by two standoff brackets. The rod transfers heat from the emitter-collector to the reservoir without going through the ceramic seal structure which surrounds the cesium tube and cannot sustain large temperature gradients.

Lazaridis, L. J.↗
NASA NTRS1989

A heat-driven monochromatic light source

The efficiency with which heat may be converted into resonance radiation in a cesium thermionic diode is investigated theoretically. An analytical model of a thermionic converter is used which combines the coupled effects of line radiation transport, excited-state kinetics, and plasma diffusion. Operating regimes are established for various degrees of optical density in the plasma. The results indicate that monochromatic radiation can be produced with efficiencies on the order of 30 percent, provided that there is an adequate voltage drop across the plasma. A drop of 1 V was used since it can be maintained without any electrical power input to the device. It is found that high efficiencies are ude to the higher interelectrode distances which the solutions accommodate, and that radiation can be generated efficiently, even with optically dense gases.

Stefani, Francis↗
DOE OSTI2020

All-vacuum-deposited inorganic cesium lead halide perovskite light-emitting diodes

Polycrystalline CsPbBr 3 thin films are deposited by vacuum co-evaporation of cesium halide and lead halide precursors, leading to uniform pinhole-free morphology and precise control over the film thickness and precursor stoichiometry. By utilizing the organic hole and electron transport layers, all-vacuum-deposited perovskite LEDs are fabricated. The resulting devices exhibit a maximum luminance of 1800 cd/m 2 , a 531 nm emission wavelength peak with a spectral linewidth of 21 nm, and an external quantum efficiency of 1.1%.

36 MATERIALS SCIENCE↗
NASA NTRS1985

Thermionic photovoltaic energy converter

A thermionic photovoltaic energy conversion device comprises a thermionic diode mounted within a hollow tubular photovoltaic converter. The thermionic diode maintains a cesium discharge for producing excited atoms that emit line radiation in the wavelength region of 850 nm to 890 nm. The photovoltaic converter is a silicon or gallium arsenide photovoltaic cell having bandgap energies in this same wavelength region for optimum cell efficiency.

Chubb, D. L.↗
DOE OSTI2023

Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

Here, we report on the measurement of the lateral distribution of the junction current of an electrical biased p-n GaN diode by electron emission microscopy using a low-energy electron microscope. The vacuum level at the surface of the diode was lowered by deposition of cesium to achieve negative electron affinity, allowing overflow electrons at the surface of the biased diodes to be emitted and their spatial distribution imaged. The results were compared to the literature, and a good match with analytical solutions by Joyce and Wemple was obtained.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1978

Investigations of negative and positive cesium ion species

A direct test is provided of the hypothesis of negative ion creation at the anode or collector of a diode operating under conditions simulating a cesium thermionic converter. The experimental technique involves using direct ion sampling through the collector electrode with mass analysis using a quadrupole mass analyzer. Similar measurements are undertaken on positive ions extracted through the emitter electrode. Measurements were made on a variety of gases including pure cesium, helium-cesium mixtures and cesium-hydrogen as well as cesium-xenon mixtures. The gas additive was used primarily to aid in understanding the negative ion formation processes. Measurements were conducted using emitter (cathode) temperatures up to about 1000 F. The major negative ion identified through the collector was Cs(-) with minor negative ion peaks tentatively identified as H(-), H2(-), H3(-), He(-) and a mass 66. Positive ions detected were believed to be Cs(+), Cs2(+) and Cs3(+).

Chanin, L. M.↗
DOE OSTI2023

Exploring cesium properties internal to the LANSCE H - ion source using resonant absorption spectroscopy

The Los Alamos Neutron Science Center (LANSCE) H - ion source has provided stable output for decades of LANL mission needs, but its maximum beam output has remained the same at ~15 mA. A roadblock to improving beam output has been a lack of thorough understanding of the internal mechanisms of LANSCE H - ion source. The LANSCE H - Ion Source Laser Diagnostic Stand (HLDS) was recently built and commissioned to explore these internal mechanisms using laser absorption techniques, to measure and diagnose dynamic H - and cesium densities. The cesium density probe is based on resonant absorption of a continuous wave diode laser tuned though the D 2 line of cesium (~852 nm). The diagnostic capabilities of HLDS will be reviewed, and measurements using the cesium laser diagnostic will be presented.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Trap-assisted Auger-Meitner recombination in GaN p-i-n diodes

Most properties of semiconductor devices are dominated by shallow impurities. However, deep defects often play an important role, for instance, in recombination processes or high field transport. While a variety of techniques are available to assess the density and energy levels of impurities, other properties, such as the recombination mechanisms of the defects, escape observation. We report on the direct measurement of hot electrons generated by trap-assisted Auger-Meitner recombination (TAAR) in GaN p-i-n diodes. By performing electron emission spectroscopy (EES) on diodes with surfaces activated to negative electron affinity by cesium, we observe the expected overflow electrons of p-i-n diodes under low current injection. However, when operating the devices at higher current densities, as low as ∼25 A/c⁢m 2 , we measure the emission of high-energy electrons. At variance with the observed hot electrons in light-emitting diodes (LEDs) using EES, the hot electrons generated in p-i-n diodes at our tested currents cannot be from eeh Auger-Meitner recombination due to the diodes' significantly lower carrier densities compared to those in LEDs. During our measurements, we observe the emission of accumulated electrons with energies ∼0.42 eV, ∼0.99 eV, ∼1.43 eV, and ∼2.32 eV above the conduction-band minimum (CBM) at various bias conditions, suggesting the existence of conduction-band features in GaN at these energies where electrons can be long-lived, such as satellite-valley minima and inflection points. We also measure incompletely relaxed hot electrons approaching energies 1.97 ± 0.13 eV and 2.94 ± 0.13 eV above the CBM, as the diodes are biased to high currents, suggesting at least some of the TAAR partaking defects have an energy level ≳1.97 eV and ≳2.94 eV away from either the conduction or valence band edges. Additionally, at our highest operating currents, we measure hot electrons with energies 3.28 ± 0.13 eV above the CBM, providing direct evidence of TAAR processes involving shallow impurities. This unexpected observation of TAAR in GaN p-i-n diodes spotlights the importance of further studies of defects in GaN and the necessity to incorporate the multi-phonon emission, radiative, and TAAR capture steps of defect-assisted recombination cycles into device modeling. Furthermore, this experiment demonstrates the applicability of the simplest semiconductor structures, p-i-n diodes, as a test bed to study the rich recombination physics of semiconductor materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1993

Optical probing of cold trapped atoms

Transitions between excited states of laser-cooled and laser-trapped rubidium and cesium atoms are probed by use of fiber and diode lasers. High-resolution Doppler-free spectra are detected by observation of the absorption and fluorescence of light from the intermediate level of two-step cascade systems. The optical double-resonance spectra show Autler-Townes splitting in the weak probe limit and more complicated spectra for a strongly coupled three-level system.

Fox, R. W.↗