Monolithic Special CMOS Sensor on High Resistivity Silicon for Particle Tracking in High Energy Physics Experiments
Explore the source record for details and available documents.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
SEARCH · Search NASA
Results for “CMOS Image Sensor”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Development of quantum dot materials for infrared cameras (Final CRADA Report)
The aim of this project was to develop scalable methods to produce infrared (IR) mercury telluride (HgTe) colloidal quantum dot (CQD) thin films and demonstrate their utility in a proof-of-concept monolithic SWIR focal plane array (FPA). These objectives were accomplished by scaling up the HgTe CQD synthesis, characterizing physical and electrical properties of HgTe CQDs, evaluating solution-processed coating methods for quality and efficiency, and developing a process flow to integrate HgTe CQDs with commercial-off-the-shelf silicon CMOS readout circuits by solution-processed coating to produce monolithic FPAs. The FPA is the image sensor in an infrared imaging system responsible for detecting and processing reflected or emitted light into an infrared image of the scene under observation. The quality of the image is determined by the sensitivity and resolution of the image sensor in the system. Higher resolution IR FPAs enable higher throughput in manufacturing quality assurance, wider field of view for autonomous navigation, and longer range surveillance for defense.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Using High-Performance Cameras for Advanced Plasma Diagnostics
We will present insights, challenges, and recent progress on using a multi-megapixel deep-depletion CCD camera for quantitative X-ray spectra in a single-hit exposure mode in order to optimize X-ray diffraction experiments. We will also present some applications of Sandia’s in-house developed hybrid CMOS (hCMOS) sensors, which can record up to four full frames of optical or X-ray images in sequences with only a few nanoseconds interframe timing in a single line-of-sight.
Geissel, Matthias [Sandia National Laboratories (S↗
Design of ePixM, a fully-depleted monolithic CMOS active pixel sensor for soft X-ray experiments at LCLS-II
The LCLS-II Free Electron Laser (FEL) will produce X-ray pulses with a repetition rate of up to 1 MHz and energies between 250 eV and 5 keV. Experiments conducted at LCLS-II will require 2D imaging detectors with a unique set of features, such as high-spatial resolution, low-noise performance, high-dynamic range and high-frame rates up to 1 MHz. We present the design of ePixM, a fully-depleted monolithic CMOS detector tailored for soft X-rays applications at high-repetition rates FEL. It consists of an array of 384×192 active pixel sensors, with a pixel size of 50×50 μm 2 and a total sensitive area of 2×1 cm 2 . ePixM has been designed in a 150 nm CMOS technology on high-resistivity substrate to achieve full depletion of the substrate. Each pixel includes a Charge Sensitive Amplifier (CSA) with gain auto-ranging capability and a noise-shaper performing Correlated Double Sampling (CDS). A novel technique named correlated pre-charging removes the excess noise introduced by the gain-switching mechanism. The performance of the design has been evaluated through post-layout simulations. The Equivalent Noise Charge (ENC) of 11.3 electrons enables single-photon detection at X-ray energies down to 250 eV, and the dynamic range exceeds 10 3 photons at 500 eV thanks to the auto-ranging circuitry.
47 OTHER INSTRUMENTATION↗
Detector thickness effects on nanosecond-gated imager response
Hybrid CMOS multi-frame imagers with exposure times down to ~2 ns have made significant impacts in high energy density physics and inertial confinement fusion research. The detector thickness is a key parameter in both detector quantum efficiency and temporal response. The Icarus hybrid CMOS imager has been fabricated with Si detector thicknesses of 8, 25, and 100 µm. The temporal response of imaging sensors with exposure time down to 2 ns has been examined and compared to directly measured photodiode current. The 100-μm thick variant displays extended features related to charge carrier collection and is more susceptible to field collapse. Here, we also demonstrate charge collection time effects on spatial response.
47 OTHER INSTRUMENTATION↗
Developing time-resolved x-ray diffraction diagnostics at the National Ignition Facility (invited)
As part of a program to measure phase transition timescales in materials under dynamic compression, we have designed new x-ray imaging diagnostics to record multiple x-ray diffraction measurements during a single laser-driven experiment. Our design places several ns-gated hybrid CMOS (hCMOS) sensors within a few cm of a laser-driven target. The sensors must be protected from an extremely harsh environment, including debris, electromagnetic pulses, and unconverted laser light. Another key challenge is reducing the x-ray background relative to the faint diffraction signal. Building on the success of our predecessor (Target Diffraction In Situ), we implemented a staged approach to platform development. First, we built a demonstration diagnostic (Gated Diffraction Development Diagnostic) with two hCMOS sensors to confirm we could adequately protect them from the harsh environment and also acquire acceptable diffraction data. This allowed the team to quickly assess the risks and address the most significant challenges. Here, we also collected scientifically useful data during development. Leveraging what we learned, we recently developed a much more ambitious instrument (Flexible Imaging Diffraction Diagnostic for Laser Experiments) that can field up to eight hCMOS sensors in a flexible geometry and participate in back-to-back shots at the National Ignition Facility (NIF). The design also allows for future iterations, such as faster hCMOS sensors and an embedded x-ray streak camera. The enhanced capabilities of the new instrument required a much more complex design, and the unexpected issues encountered on the first few shots at NIF remind us that complexity has consequences. Our progress in addressing these challenges is described herein, as is our current focus on improving data quality by reducing x-ray background and quantifying the uncertainties of our diffraction measurements.
36 MATERIALS SCIENCE↗
Ultra-fast LuI{sub 3}:Ce scintillators for hard x-ray imaging
We have developed ultra-fast cerium-coped lutetium-iodide (LuI{sub 3}:Ce) films thermally evaporated as polycrystalline, structured scintillator using hot wall epitaxy (HWE) method. The films have shown a 13 ns decay compared to the 28 ns reported for crystals. The fast speed coupled with its high density (∼5.6 g/cm{sup 3}), high effective atomic number (59.7), and the fact that it can be vapor deposited in a columnar form makes LuI{sub 3}:Ce an attractive candidate for high frame rate, high-resolution, hard X-ray imaging. In crystal form, LuI{sub 3}:Ce has demonstrated bright (>100,000 photons/MeV) green (540 nm) emission, which is well matched to commercial CCD/CMOS sensors and is critical for maintaining high signal to noise ratio in light starved applications. Here, we report on the scintillation properties of films and those for corresponding crystalline material. The vapor grown films were integrated into a high-speed CMOS imager to demonstrate high-speed radiography capability. The films were also tested at Advanced Photon Source, Argonne National Laboratory beamline 1-ID under hard X-ray irradiation. The data show a factor of four higher efficiency than the reference LuAG:Ce scintillators, high image quality, and linearity of scintillation response over a wide energy range. The films were employed to perform hard X-ray microtomography, the results of which will also be discussed.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Two 28-nm front-end ASICs for ultra-fine spatial resolution and precision timing to be 3D integrated with 12 LGADs
The 3DIntSenS Collaboration—a joint effort between SLAC, Fermilab, and LLNL—is developing enabling technologies for next-generation radiation imaging detectors that combine ultra-fine spatial resolution (about 10 µm) with precision timing (<20 ps), while maintaining low power <1 W/cm2 and high data throughput. The approach leverages 3D integration between advanced CMOS readout ASICs and finely pixelated LGAD sensors to achieve the performance and scalability required for large-area, high-rate applications. High-granularity, precision-timing detectors are essential for scientific advances in HEP, NP, BES, and FES, but widespread adoption is limited by the cost and complexity of 3D integration. To close this gap, the collaboration is developing LGAD sensors compatible with 12-inch commercial CMOS processes, enabling cost-effective integration with high-performance ASICs under development. We present two 28 nm CMOS ASIC prototypes, including a low-jitter front end, and in-pixel TDC demonstrating sub-10 ps timing resolution. These advances represent a critical step toward scalable, high-resolution radiation imaging systems for future scientific instrumentation.
England, Troy [Fermilab] (ORCID:0000000154405255)↗
Two 28-nm front-end ASICs for ultra-fine spatial resolution and precision timing to be 3D integrated with 12 LGADs
The 3DIntSenS Collaboration—a joint effort between SLAC, Fermilab, and LLNL—is developing enabling technologies for next-generation radiation imaging detectors that combine ultra-fine spatial resolution (about 10 µm) with precision timing (<20 ps), while maintaining low power <1 W/cm2 and high data throughput. The approach leverages 3D integration between advanced CMOS readout ASICs and finely pixelated LGAD sensors to achieve the performance and scalability required for large-area, high-rate applications. High-granularity, precision-timing detectors are essential for scientific advances in HEP, NP, BES, and FES, but widespread adoption is limited by the cost and complexity of 3D integration. To close this gap, the collaboration is developing LGAD sensors compatible with 12-inch commercial CMOS processes, enabling cost-effective integration with high-performance ASICs under development. We present two 28 nm CMOS ASIC prototypes, including a low-jitter front end, and in-pixel TDC demonstrating sub-10 ps timing resolution. These advances represent a critical step toward scalable, high-resolution radiation imaging systems for future scientific instrumentation.
England, Troy [Fermilab] (ORCID:0000000154405255)↗
28nm front end ASIC and 12” LGADs for 3D integration
The 3DIntSenS Collaboration—a joint effort between SLAC, Fermilab, and LLNL—is developing enabling technologies for next-generation radiation imaging detectors that combine ultra-fine spatial resolution (≈10 μm) with precision timing (<20 ps), while maintaining low power <1 W/cm2 and high data throughput. The approach leverages 3D integration between advanced CMOS readout ASICs and finely pixelated LGAD sensors to achieve the performance and scalability required for large-area, high-rate applications. High-granularity, precision-timing detectors are essential for scientific advances in HEP, NP, BES, and FES, but widespread adoption is limited by the cost and complexity of 3D integration. To close this gap, the collaboration is developing LGAD sensors compatible with 12-inch commercial CMOS processes, enabling cost-effective integration with high-performance ASICs under development. We present the design and results from a 28 nm CMOS ASIC prototype, including a low-jitter front end, and in-pixel TDC demonstrating sub-10 ps timing resolution. We also report on the co-design and characterization of reticle-scale LGAD sensors with 50 μm and 100 μm pixels and introduce the next 10k-pixel ASIC designed for full 3D integration. These advances represent a critical step toward scalable, high-resolution radiation imaging systems for future scientific instrumentation.
England, Troy [Fermilab] (ORCID:0000000154405255)↗
Demonstration of sub-micron UCN position resolution using room-temperature CMOS sensor
High spatial resolution of ultracold neutron (UCN) measurement is of growing interest to UCN experiments such as UCN spectrometers, UCN polarimeters, quantum physics of UCNs, and quantum gravity. Here we utilize physics informed deep learning to enhance the experimental position resolution and to demonstrate sub-micron spatial resolutions for UCN position measurements obtained using a room-temperature CMOS sensor, extending our previous work that demonstrated a position uncertainty of 1.5 microns. We explore the use of the open-source software Allpix Squared to generate experiment-like synthetic hit images with ground-truth position labels. We use physics-informed deep learning by training a fully connected neural network (FCNN) to learn a mapping from input hit images to output hit position. The automated analysis for sub-micron position resolution in UCN detection combined with the fast data rates of current and next generation UCN sources will enable improved precision for future UCN research and applications.
10B nanometer thin film↗
Data for "In vitro and in vivo NIR Fluorescence Lifetime Imaging with a time-gated SPAD camera"
Near-infrared (NIR) fluorescence lifetime imaging (FLI) provides a unique contrast mechanism to monitor biological parameters and molecular events in vivo. Single-photon avalanche diode (SPAD) cameras have been recently demonstrated in FLI microscopy (FLIM) applications, but their suitability for in vivo macroscopic FLI (MFLI) in deep tissues remains to be demonstrated. Herein, we report in vivo NIR MFLI measurement with SwissSPAD2, a large time-gated SPAD camera. We first benchmark its performance in well-controlled in vitro experiments, ranging from monitoring environmental effects on fluorescence lifetime, to quantifying Förster resonant energy transfer (FRET) between dyes. Next, we use it for in vivo studies of target-drug engagement in live and intact tumor xenografts using FRET. Information obtained with SwissSPAD2 was successfully compared to that obtained with a gated intensified charge-coupled device (ICCD) camera, using two different approaches. Our results demonstrate that SPAD cameras offer a powerful technology for in vivo preclinical applications in the NIR window.
2DG↗
Nanosecond Gated CMOS Camera (NSGCC) ICD (Rev. 2.1)
The Ultra-Fast X-ray Imager (UXI) program is an ongoing effort at Sandia National Laboratories to create high speed, multi-frame, time-gated Read Out Integrated Circuits (ROICs), and a corresponding suite of photodetectors to image a wide variety of High Energy Density (HED) physics experiments on both Sandia’s Z-Machine and LLNL’s National Ignition Facility (NIF). Several cameras have been designed over the length of the program; one of the most recent is the Icarus, which is an improvement on past imagers (Furi and Hippogriff). A second sensor that can be connected is the Daedalus sensor. The Icarus is a 1024 × 512-pixel array with either 25 μm or 8 µm spatial resolution containing four frames of storage per pixel and has improved timing generation and distribution components while achieved 2 ns time gating. The Daedalus sensor is also a 1024 x 512-pixel array with 25 µm special resolution containing three frames of storage per pixel and has an increased set of features for a wider variety of applications from interlacing of rows in each frame to configurability of all shutters. See Section 14 for details regarding the Icarus implementation of the firmware and Section 15 for details regarding the Daedalus implementation. Due to the unique test environments UXI sensors are targeted for, full custom hardware was required to physically mount an Icarus or Daedalus sensor, manage its various functions, and read out pixel data for transfer to a host computer. Beyond experimental functionality, the hardware also needed to accommodate sensor characterization requirements. Lawrence Livermore National Laboratory’s ‘Version 4.0 Board’ was the result of these efforts. It mounts all the components required to fully utilize the Icarus and Daedalus sensors including analog to digital converters to convert pixel data and various system voltages to digital form for readout and analysis, DAC channels for remote configuration of critical bias voltages, static random-access memories to buffer pixel data, RS422 and Gigabit Ethernet communications for remote access, and an FPGA to tie these components together. This document describes the FPGA electrical interfaces in detail to allow the reader a greater understanding of the device, and to facilitate implementation of custom software to control and manage it. The Version 4.0 Board is a continuation of the Nano-second Gated CMOS hardware design that retains much of the functionality of the Version 1.0 Board while adding features including a DAC instead of digital potentiometers, as well as sensors for pressure and radiation. The Version 4.0 board is intended for applications requiring tight form-factor enclosures. It is composed of two stacking boards; one holds the FPGA and regulators to power the various components of the board while the other contains the mating connector to the sensor, image-readoff ADCs, the DAC, and other components.
42 ENGINEERING↗
SULI Research Report Paper
Hybrid-CMOS (hCMOS) nanosecond x-ray imagers are a powerful timeresolved HED (high-energy-density) diagnostic due to their sensitivity to visible light, x-rays, and charged particles. However, significant pseudosinusoidal background oscillations have been observed in these sensors when exposed to an early incident excitation, a phenomenon that has been experimentally linked the sensor’s bond wire inductance. We analyze the oscillations both in the time domain and spatially to account for variations on the pixel level. Both theoretical techniques and analysis of experimental data have shown that the oscillations are a global sensor phenomenon. In addition, we effectively describe the oscillations with a physics-based model, giving further insight into the processes affecting them. This technique allows the hCMOS user to subtract out the oscillations from their measurements and improve accuracy.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Colorimetric-Luminance Readout for Quantitative Analysis of Fluorescence Signals with a Smartphone CMOS Sensor
Smartphones have shown promise as an enabling technology for portable and distributed point-of-care diagnostic tests. The CMOS camera sensor can be used for detecting optical signals, including fluorescence for applications such as isothermal nucleic acid amplification tests. However, such analysis is typically limited mostly to end point detection of single targets. In this paper, we present a smartphone-based image analysis pipeline that utilizes the CIE xyY (chromaticity-luminance) color space to measure the luminance (in lieu of RGB intensities) of fluorescent signals arising from nucleic acid amplification targets, with a discrimination sensitivity (ratio between the positive to negative signals), which is an order of magnitude more than traditional RGB intensity based analysis. Furthermore, the chromaticity part of the analysis enables reliable multiplexed detection of different targets labeled with spectrally separated fluorophores. We apply this chromaticity-luminance formulation to simultaneously detect Zika and chikungunya viral RNA via end point RT-LAMP (Reverse transcription Loop-Mediated isothermal amplification). We also show real time LAMP detection of Neisseria gonorrhoeae samples down to a copy number of 3.5 copies per 10 μL of reaction volume in our smartphone-operated portable LAMP box. Finally, our chromaticity-luminance analysis is readily adaptable to other types of multiplexed fluorescence measurements using a smartphone camera.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Long duration x-ray source development for x-ray diffraction at the National Ignition Facility
We present the results of experiments to produce a 10 ns-long, quasi-monochromatic x-ray source. This effort is needed to support time-resolved x-ray diffraction (XRDt) measurements of phase transitions during laser-driven dynamic compression experiments at the National Ignition Facility. To record XRDt of phase transitions as they occur, we use high-speed (∼1 ns) gated hybrid CMOS detectors, which record multiple frames of data over a timescale of a few to tens of ns. Consequently, to make effective use of these imagers, XRDt needs the x-ray source to be narrow in energy and uniform in time as long as the sensors are active. The x-ray source is produced by a laser irradiated Ge foil. Our results indicate that the x-ray source lasts during the whole duration of the main laser pulse. Both time-resolved and time-integrated spectral data indicate that the line emission is dominated by the He-α complex over higher energy emission lines. Time-integrated spectra agree well with a one-dimensional Cartesian simulation using HYDRA that predicts a conversion efficiency of 0.56% when the incident intensity is 2 × 1015 W/cm2 on a Ge backlighter.
Werellapatha, K. (ORCID:0000000293154054)↗
Evaluation of an event-driven 3FI ASIC for spectroscopic X-ray detection with synchrotron radiation
The novel design and evaluation on the NSLS-II beamline of the 3FI application-specific integrated circuit (ASIC) bump-bonded to a simple, planar, 2D segmented silicon sensor are presented. The ASIC was developed for full-field fluorescence spectral X-ray imaging (3FI). It is a small-scale prototype that features a square array of 32 × 32 pixels, and the size of the pixels is 100 µm × 100 µm. The ASIC was implemented in a 65 nm CMOS integrated circuit fabrication process. Each pixel incorporates a charge-sensitive amplifier, a shaping filter, a discriminator, a peak detector and a sample-and-hold circuit, allowing detection of events and storage of signal amplitudes. The system operates in a frameless event-driven readout mode, outputting analog values for threshold-triggered events, allowing high-speed multi-element X-ray fluorescence data acquisition. The 3FI ASIC achieves per-channel spectrometric performance at a power consumption of only 200 µW per pixel, with nearly all dissipation confined to the analog front-end. An energy resolution is measured at the level of 308 eV full width at half-maximum (FWHM) at 8.04 keV (Cu Kα), and 138 eV FWHM at 3.69 keV (Ca Kα). This per-pixel capability makes the prototype suitable for in situ trace element microanalysis in biological and environmental studies. Moreover, the frameless architecture of the detector is designed to address limitations of conventional X-ray fluorescence microscopy, which typically requires mechanical scanning, by enabling continuous high-throughput data acquisition in future full-field implementations.
47 OTHER INSTRUMENTATION↗
High Energy Micron Scale Pixel Hybrid Detector
The objective of this technology development project has been to fabricate and characterize a new X-ray area image sensor innovation designed for high efficiency detection and imaging of hard X-rays (>20 KeV) with micron scale pixel resolution. A key technology component consists of a monolithic hybrid X-ray detector built by layering an amorphous Selenium X-ray photoconductor film directly deposited on a small pitch (7.8μm) CMOS active pixel readout array. A specific goal of this work is to provide a new detector tool to researchers working with synchrotron light sources, to extend the depth of exploration into nanoscale structures, and do so cost effectively. Early generation X-ray imaging detector tools fail to provide adequate resolving power and efficiency at high energies and our innovation provides a solution. A majority of proposed phase I tasks were completed. Those tasks included, in collaboration with KA Imaging, successful fabrication of specified a-Se layers on a 1Mpixel CMOS readout array to create the direct hybrid X-ray imaging array, packaging of the imaging array, assembly of electronics into a shielded detector box, loading user interface software for camera control and image capture, and performing initial (no X-ray) detector evaluation at Farrier Microengineering facilities. After initial tests, extensive testing using the X-ray beam line 1-BM source at Argonne National Laboratory Advanced Photon Source(ANL-APS) was performed. Imaging performance studies were conducted at multiple X-ray beam energies. Studies included X-ray response vs. X-ray energy, vs. applied detector field strength (HV), response linearity vs. integration time, MTF vs. beam energy, image lag measurements, and micron scale resolution pattern target imaging. This high energy micron scale X-ray detection technology is a first of a kind to be evaluated at the ANL-APS and is supported by Dr. Antonino Miceli, head of the detector physics group. Accomplishments include the first successful demonstration of a 1Mpix amorphous Selenium on CMOS readout direct hybrid X-ray imaging detector at a DOE sponsored National Laboratory. Modeled performance predictions were confirmed, proving micron scale resolution as well as an order of magnitude increase in conversion efficiency over conventional scintillator detector performance. A discovery of evidence of propagation-based phase contrast edge enhancement was unplanned and will be exploited in future experiments. This phase 1 technology demonstration verifies the efficacy of proposed high energy micron scale pixel X-ray hybrid a-Se imaging array products. The new detector products will cost effectively replace early generation detector technologies that currently fail to address increasing demand for tools to study nano structures and physical processes at high X-ray energies above 20keV. For example, current systems for transmission X-ray microscopy have low efficiency and available large pixel (~55µm) direct detectors do not offer sufficient resolution for Bragg fringe imaging at high energies. This detector innovation will solve these inadequacies. The new detector technology will compete in a $50M scientific X-ray detector market, growing at 6%, and will benefit Microtomography(µCT), X-ray diffractometry (XRD), Coherent Diffraction Imaging (CDI) applications. One application specified by Dr. Miceli at ANL is the 3D reconstruction of compact crystals at high energies requires small pixel high efficiency X-ray detectors. Farrier Microengineering, working with colleagues at KA Imaging and the University of Waterloo, successfully achieved the critical objectives of the Phase I proposal. We have proven the technical feasibility of this innovation by building and successfully testing a 1Mpixel a-Se/CMOS hybrid direct X-ray imaging array. Our commercialization roadmap of detector products will be implemented during a phase II project. We will demonstrate a migration of the technology to larger detector array sizes, improved temporal performance with detector layer engineering, and improved environmental and operational stability. Manufacturability and cost effectiveness are key objectives and product designs will leverage current state of the art CMOS wafer fabrication quality and volume manufacturing economics.
36 MATERIALS SCIENCE↗