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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

NASA Tech Briefs, July 2007

Topics covered include: Miniature Intelligent Sensor Module; "Smart" Sensor Module; Portable Apparatus for Electrochemical Sensing of Ethylene; Increasing Linear Dynamic Range of a CMOS Image Sensor; Flight Qualified Micro Sun Sensor; Norbornene-Based Polymer Electrolytes for Lithium Cells; Making Single-Source Precursors of Ternary Semiconductors; Water-Free Proton-Conducting Membranes for Fuel Cells; Mo/Ti Diffusion Bonding for Making Thermoelectric Devices; Photodetectors on Coronagraph Mask for Pointing Control; High-Energy-Density, Low-Temperature Li/CFx Primary Cells; G4-FETs as Universal and Programmable Logic Gates; Fabrication of Buried Nanochannels From Nanowire Patterns; Diamond Smoothing Tools; Infrared Imaging System for Studying Brain Function; Rarefying Spectra of Whispering-Gallery-Mode Resonators; Large-Area Permanent-Magnet ECR Plasma Source; Slot-Antenna/Permanent-Magnet Device for Generating Plasma; Fiber-Optic Strain Gauge With High Resolution And Update Rate; Broadband Achromatic Telecentric Lens; Temperature-Corrected Model of Turbulence in Hot Jet Flows; Enhanced Elliptic Grid Generation; Automated Knowledge Discovery From Simulators; Electro-Optical Modulator Bias Control Using Bipolar Pulses; Generative Representations for Automated Design of Robots; Mars-Approach Navigation Using In Situ Orbiters; Efficient Optimization of Low-Thrust Spacecraft Trajectories; Cylindrical Asymmetrical Capacitors for Use in Outer Space; Protecting Against Faults in JPL Spacecraft; Algorithm Optimally Allocates Actuation of a Spacecraft; and Radar Interferometer for Topographic Mapping of Glaciers and Ice Sheets.

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NASA NTRS2012

NASA Tech Briefs, July 2012

Topics covered include: Instrument Suite for Vertical Characterization of the Ionosphere-Thermosphere System; Terahertz Radiation Heterodyne Detector Using Two-Dimensional Electron Gas in a GaN Heterostructure; Pattern Recognition Algorithm for High-Sensitivity Odorant Detection in Unknown Environments; Determining Performance Acceptability of Electrochemical Oxygen Sensors; Versatile Controller for Infrared Lamp and Heater Arrays; High-Speed Scanning Interferometer Using CMOS Image Sensor and FPGA Based on Multifrequency Phase-Tracking Detection; Ultra-Low-Power MEMS Selective Gas Sensors; Compact Receiver Front Ends for Submillimeter-Wave Applications; Dynamically Reconfigurable Systolic Array Accelerator; Blocking Losses With a Photon Counter; Motion-Capture-Enabled Software for Gestural Control of 3D Mod; Orbit Software Suite; CoNNeCT Baseband Processor Module Boot Code SoftWare (BCSW); Trajectory Software With Upper Atmosphere Model; ALSSAT Version 6.0; Employing a Grinding Technology to Assess the Microbial Density for Encapsulated Organisms; Demonstration of Minimally Machined Honeycomb Silicon Carbide Mirrors; Polyimide Aerogel Thin Films; Nanoengineered Thermal Materials Based on Carbon Nanotube Array Composites; Composite Laminate With Coefficient of Thermal Expansion Matching D263 Glass; Robust Tensioned Kevlar Suspension Design; Focal Plane Alignment Utilizing Optical CMM; Purifying, Separating, and Concentrating Cells From a Sample Low in Biomass; Virtual Ultrasound Guidance for Inexperienced Operators; Beat-to-Beat Blood Pressure Monitor; Non-Contact Conductivity Measurement for Automated Sample Processing Systems; An MSK Radar Waveform; Telescope Alignment From Sparsely Sampled Wavefront Measurements Over Pupil Subapertures; Method to Remove Particulate Matter from Dusty Gases at Low Pressures; Terahertz Quantum Cascade Laser With Efficient Coupling and Beam Profile; Measurement Via Optical Near-Nulling and Subaperture Stitching; 885-nm Pumped Ceramic Nd:YAG Master Oscillator Power Amplifier Laser System; Airborne Hyperspectral Imaging System; Heat Shield Employing Cured Thermal Protection Material Blocks Bonded in a Large-Cell Honeycomb Matrix; and Asymmetric Supercapacitor for Long-Duration Power Storage.

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NASA NTRS2021

Advances in Detector-Integrated Filter Coatings for the Far Ultraviolet

We report on the continued development of multilayer optical coatings on back-illuminated silicon imaging sensors in order to enhance the functionality of such systems at ultraviolet wavelengths. This includes the development metal-dielectric filter structures to enable solar-blind operation, and graded thickness coatings to tune the spatial response of a detector system to the dispersion of a spectrometer. Such systems can maintain the high internal quantum efficiency afforded by the delta-doping process utilized at NASA JPL, while also providing long-wavelength rejection or a spatially optimized efficiency (or both). We present the characterization of CCD and CMOS image sensors incorporating these processes, and describe the atomic layer deposition coating processes. Such detectors are currently being developed for ground-based high energy physics applications as well as NASA orbital astrophysics instruments operating at wavelengths shorter than 200 nm.

Nikzad, Shouleh↗
NASA NTRS2007

A CMOS Imager with Focal Plane Compression using Predictive Coding

This paper presents a CMOS image sensor with focal-plane compression. The design has a column-level architecture and it is based on predictive coding techniques for image decorrelation. The prediction operations are performed in the analog domain to avoid quantization noise and to decrease the area complexity of the circuit, The prediction residuals are quantized and encoded by a joint quantizer/coder circuit. To save area resources, the joint quantizerlcoder circuit exploits common circuitry between a single-slope analog-to-digital converter (ADC) and a Golomb-Rice entropy coder. This combination of ADC and encoder allows the integration of the entropy coder at the column level. A prototype chip was fabricated in a 0.35 pm CMOS process. The output of the chip is a compressed bit stream. The test chip occupies a silicon area of 2.60 mm x 5.96 mm which includes an 80 X 44 APS array. Tests of the fabricated chip demonstrate the validity of the design.

Leon-Salas, Walter D.↗
NASA NTRSDate not supplied

Future Lightning Instruments for Weather and Climate Monitoring From LEO

Lightning is not only a natural hazard, but it also holds information about physical processes at work in deep convection and influences atmospheric oxidants that modulate ozone and methane. Hence, spaceborne lightning observations are essential for monitoring extreme events and feedbacks in Earth’s climate system. Low-Earth orbiting (LEO) lightning mapping instruments established a 25-year record of global lightning activity and resulted in a wealth of studies that motivated its designation as an Essential Climate Variable by the World Meteorological Organization. Although geostationary observations of lightning have become increasingly available since 2017, LEO lightning mappers continue to serve critical needs given their unique vantage point and acceptance as a unifying reference for geostationary lightning mapper and ground-based global lightning datasets. At the close of 2023, the Lightning Imaging Sensor (LIS) will cease operations on the International Space Station, which introduces a critical gap in LEO-based monitoring of global lightning activity. To address this need, NASA is developing new lightning mapping technology that enables future LEO-based satellite missions. Existing LEO-based lightning mappers rely on narrowband optical emissions centered on 777.4-nm and detectors that capture 500 images per second to detect lightning both day and night. Lightning can also produce optical emissions in a narrowband centered on 337-nm without any corresponding emissions at the traditionally used near-infrared (NIR) wavelength. These near-ultraviolet (UV) emissions are associated with earlier stage electrical breakdown (e.g., streamers), may frequent intense regions of deep convective storms, and may be a significant source of nitrogen oxide production in the upper atmosphere. A new lightning mapping instrument called the CubeSat Lightning Imaging and Detection Experiment (CLIDE) is being designed at NASA Marshall Space Flight Center to use high-speed, scientific CMOS image sensors capable of detecting lightning’s transient optical emissions in the near-UV and NIR during both daylit and nighttime scenes. This will extend the record of global lightning activity and help pave the way for future small satellite missions that combine radio and optical lightning detectors to obtain novel three-dimensional maps of lightning on a global scale, which can revolutionize the way lightning is used to monitor weather and understand changes in climate.

lightning↗
DOE OSTI2025

Perspectives of active Si photonics devices for data communication and optical sensing

Si photonics has made rapid progress in research and commercialization in the past two decades. While it started with electronic–photonic integration on Si to overcome the interconnect bottleneck in data communications, Si photonics has now greatly expanded into optical sensing, light detection and ranging (LiDAR), optical computing, and microwave/RF photonics applications. From an applied physics point of view, this perspective discusses novel materials and integration schemes of active Si photonics devices for a broad range of applications in data communications, spectrally extended complementary metal–oxide–semiconductor (CMOS) image sensing, as well as 3D imaging for LiDAR systems. We also present a brief outlook of future synergy between Si photonic integrated circuits and Si CMOS image sensors toward ultrahigh capacity optical I/O, ultrafast imaging systems, and ultrahigh sensitivity lab-on-chip molecular biosensing.

electronic band structure↗
DOE OSTI2022

Optics-Free Chip-Scale Intraoperative Imaging Using NIR-Excited Upconverting Nanoparticles

Here we present an optics-free CMOS image sensor that incorporates a novel time-gated dual-photodiode pixel design to allow filter- and lens-less image acquisition of near-infrared-excited (NIR-excited) upconverting nanoparticles. Recent biomedical advances have highlighted the benefits of NIR excitation, but NIR interaction with silicon has remained a challenge, even with high-performance optical blocking filters. Using a secondary diode and a dual-photodiode design, this sensor is able to remove the 100s of mV of NIR background on pixels and bring it down to single-digit mV level, nearing its noise floor of 2.2 mV rms, not achievable with any optical filter. Non-linear effects of background cancellation using the diode pair has been mitigated using an initial one-time pixel-level curve fitting and calibration in a post-processing setting. This imager comprises a highly linear 11 fF metal-oxide-metal (MOM) capacitor and includes integrated angle-selective gratings to reject oblique light and enhance sharpness. Each pixel also includes two distinct correlated double sampling schemes, to remove low frequency flicker noise and systematic offset in the datapath. We demonstrate the performance of this imager using pulsed NIR-excited upconverting nanoparticles on standard United-States-Air-Force (USAF) resolution targets and achieve an SNR of 15 dB, while keeping NIR background below 6 mV. This 36-by-80-pixel array measures only 2.3 mm by 4.8 mm and can be thinned down to 25 µm, allowing it to become surgically compatible with intraoperative instruments and equipment, while remaining optics-free.

42 ENGINEERING↗
DOE OSTI2021

Monte Carlo Modeling and Design of Photon Energy Attenuation Layers for >10× Quantum Yield Enhancement in Si-Based Hard X-ray Detectors

High-energy (>20 keV) X-ray photon detection at high quantum yield, high spatial resolution, and short response time has long been an important area of study in physics. Scintillation is a prevalent method but limited in various ways. Directly detecting high-energy X-ray photons has been a challenge to this day, mainly due to low photon-to-photoelectron conversion efficiencies. Commercially available state-of-the-art Si direct detection products such as the Si charge-coupled device (CCD) are inefficient for >10 keV photons. Here, we present Monte Carlo simulation results and analyses to introduce a highly effective yet simple high-energy X-ray detection concept with significantly enhanced photon-to-electron conversion efficiencies composed of two layers: a top high-Z photon energy attenuation layer (PAL) and a bottom Si detector. We use the principle of photon energy down conversion, where high-energy X-ray photon energies are attenuated down to ≤10 keV via inelastic scattering suitable for efficient photoelectric absorption by Si. Our Monte Carlo simulation results demonstrate that a 10–30× increase in quantum yield can be achieved using PbTe PAL on Si, potentially advancing high-resolution, high-efficiency X-ray detection using PAL-enhanced Si CMOS image sensors.

47 OTHER INSTRUMENTATION↗
NASA NTRS2009

Improved Signal Chains for Readout of CMOS Imagers

An improved generic design has been devised for implementing signal chains involved in readout from complementary metal oxide/semiconductor (CMOS) image sensors and for other readout integrated circuits (ICs) that perform equivalent functions. The design applies to any such IC in which output signal charges from the pixels in a given row are transferred simultaneously into sampling capacitors at the bottoms of the columns, then voltages representing individual pixel charges are read out in sequence by sequentially turning on column-selecting field-effect transistors (FETs) in synchronism with source-follower- or operational-amplifier-based amplifier circuits. The improved design affords the best features of prior source-follower-and operational- amplifier-based designs while overcoming the major limitations of those designs. The limitations can be summarized as follows: a) For a source-follower-based signal chain, the ohmic voltage drop associated with DC bias current flowing through the column-selection FET causes unacceptable voltage offset, nonlinearity, and reduced small-signal gain. b) For an operational-amplifier-based signal chain, the required bias current and the output noise increase superlinearly with size of the pixel array because of a corresponding increase in the effective capacitance of the row bus used to couple the sampled column charges to the operational amplifier. The effect of the bus capacitance is to simultaneously slow down the readout circuit and increase noise through the Miller effect.

Pain, Bedabrata↗
NASA NTRS2010

Plenoptic Imager for Automated Surface Navigation

An electro-optical imaging device is capable of autonomously determining the range to objects in a scene without the use of active emitters or multiple apertures. The novel, automated, low-power imaging system is based on a plenoptic camera design that was constructed as a breadboard system. Nanohmics proved feasibility of the concept by designing an optical system for a prototype plenoptic camera, developing simulated plenoptic images and range-calculation algorithms, constructing a breadboard prototype plenoptic camera, and processing images (including range calculations) from the prototype system. The breadboard demonstration included an optical subsystem comprised of a main aperture lens, a mechanical structure that holds an array of micro lenses at the focal distance from the main lens, and a structure that mates a CMOS imaging sensor the correct distance from the micro lenses. The demonstrator also featured embedded electronics for camera readout, and a post-processor executing image-processing algorithms to provide ranging information.

Zollar, Byron↗
NASA NTRS1994

Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

JPL, under sponsorship from the NASA Office of Advanced Concepts and Technology, has been developing a second-generation solid-state image sensor technology. Charge-coupled devices (CCD) are a well-established first generation image sensor technology. For both commercial and NASA applications, CCDs have numerous shortcomings. In response, the active pixel sensor (APS) technology has been under research. The major advantages of APS technology are the ability to integrate on-chip timing, control, signal-processing and analog-to-digital converter functions, reduced sensitivity to radiation effects, low power operation, and random access readout.

solid-state image sensors active pixel sensor APS ↗
NASA NTRS1996

CMOS Active-Pixel Image Sensor With Intensity-Driven Readout

Proposed complementary metal oxide/semiconductor (CMOS) integrated-circuit image sensor automatically provides readouts from pixels in order of decreasing illumination intensity. Sensor operated in integration mode. Particularly useful in number of image-sensing tasks, including diffractive laser range-finding, three-dimensional imaging, event-driven readout of sparse sensor arrays, and star tracking.

Langenbacher, Harry T.↗
NASA NTRS1996

CMOS Active-Pixel Image Sensor With Simple Floating Gates

Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

Fossum, Eric R.↗
NASA NTRS2002

Integrated imaging sensor systems with CMOS active pixel sensor technology

This paper discusses common approaches to CMOS APS technology, as well as specific results on the five-wire programmable digital camera-on-a-chip developed at JPL. The paper also reports recent research in the design, operation, and performance of APS imagers for several imager applications.

double sampling↗
DOE OSTI2023

Chip-integrated metasurface full-Stokes polarimetric imaging sensor

Abstract Polarimetric imaging has a wide range of applications for uncovering features invisible to human eyes and conventional imaging sensors. Chip-integrated, fast, cost-effective, and accurate full-Stokes polarimetric imaging sensors are highly desirable in many applications, which, however, remain elusive due to fundamental material limitations. Here we present a chip-integrated Meta surface-based Full-Stokes Polar imetric Im aging sensor (MetaPolarIm) realized by integrating an ultrathin (~600 nm) metasurface polarization filter array (MPFA) onto a visible imaging sensor with CMOS compatible fabrication processes. The MPFA is featured with broadband dielectric-metal hybrid chiral metasurfaces and double-layer nanograting polarizers. This chip-integrated polarimetric imaging sensor enables single-shot full-Stokes imaging (speed limited by the CMOS imager) with the most compact form factor, records high measurement accuracy, dual-color operation (green and red) and a field of view up to 40 degrees. MetaPolarIm holds great promise to enable transformative applications in autonomous vision, industry inspection, space exploration, medical imaging and diagnosis.

47 OTHER INSTRUMENTATION↗