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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Ultrafast radiographic imaging and tracking: An overview of instruments, methods, data, and applications

Ultrafast radiographic imaging and tracking (U-RadIT) use state-of-the-art ionizing particle and light sources to experimentally study sub-nanosecond transients or dynamic processes in physics, chemistry, biology, geology, materials science and other fields. These processes are fundamental to modern technologies and applications, such as nuclear fusion energy, advanced manufacturing, communication, and green transportation, which often involve one mole or more atoms and elementary particles, and thus are challenging to compute by using the first principles of quantum physics or other forward models. One of the central problems in U-RadIT is to optimize information yield through, e.g. high-luminosity X-ray and particle sources, efficient imaging and tracking detectors, novel methods to collect data, and large-bandwidth online and offline data processing, regulated by the underlying physics, statistics, and computing power. We review and highlight recent progress in: (a.) Detectors such as high-speed complementary metal-oxide semiconductor (CMOS) cameras, hybrid pixelated array detectors integrated with Timepix4 and other application-specific integrated circuits (ASICs), and digital photon detectors; (b.) U-RadIT modalities such as dynamic phase contrast imaging, dynamic diffractive imaging, and four-dimensional (4D) particle tracking; (c.) U-RadIT data and algorithms such as neural networks and machine learning, and (d.) Applications in ultrafast dynamic material science using XFELs, synchrotrons and laser-driven sources. Hardware-centric approaches to U-RadIT optimization are constrained by detector material properties, low signal-to-noise ratio, high cost and long development cycles of critical hardware components such as ASICs. Interpretation of experimental data, including comparisons with forward models, is frequently hindered by sparse measurements, model and measurement uncertainties, and noise. Alternatively, U-RadIT make increasing use of data science and machine learning algorithms, including experimental implementations of compressed sensing. Machine learning and artificial intelligence approaches, refined by physics and materials information, may also contribute significantly to data interpretation, uncertainty quantification and U-RadIT optimization.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2007

Increasing Linear Dynamic Range of a CMOS Image Sensor

A generic design and a corresponding operating sequence have been developed for increasing the linear-response dynamic range of a complementary metal oxide/semiconductor (CMOS) image sensor. The design provides for linear calibrated dual-gain pixels that operate at high gain at a low signal level and at low gain at a signal level above a preset threshold. Unlike most prior designs for increasing dynamic range of an image sensor, this design does not entail any increase in noise (including fixed-pattern noise), decrease in responsivity or linearity, or degradation of photometric calibration. The figure is a simplified schematic diagram showing the circuit of one pixel and pertinent parts of its column readout circuitry. The conventional part of the pixel circuit includes a photodiode having a small capacitance, CD. The unconventional part includes an additional larger capacitance, CL, that can be connected to the photodiode via a transfer gate controlled in part by a latch. In the high-gain mode, the signal labeled TSR in the figure is held low through the latch, which also helps to adapt the gain on a pixel-by-pixel basis. Light must be coupled to the pixel through a microlens or by back illumination in order to obtain a high effective fill factor; this is necessary to ensure high quantum efficiency, a loss of which would minimize the efficacy of the dynamic- range-enhancement scheme. Once the level of illumination of the pixel exceeds the threshold, TSR is turned on, causing the transfer gate to conduct, thereby adding CL to the pixel capacitance. The added capacitance reduces the conversion gain, and increases the pixel electron-handling capacity, thereby providing an extension of the dynamic range. By use of an array of comparators also at the bottom of the column, photocharge voltages on sampling capacitors in each column are compared with a reference voltage to determine whether it is necessary to switch from the high-gain to the low-gain mode. Depending upon the built-in offset in each pixel and in each comparator, the point at which the gain change occurs will be different, adding gain-dependent fixed pattern noise in each pixel. The offset, and hence the fixed pattern noise, is eliminated by sampling the pixel readout charge four times by use of four capacitors (instead of two such capacitors as in conventional design) connected to the bottom of the column via electronic switches SHS1, SHR1, SHS2, and SHR2, respectively, corresponding to high and low values of the signals TSR and RST. The samples are combined in an appropriate fashion to cancel offset-induced errors, and provide spurious-free imaging with extended dynamic range.

Pain, Bedabrata↗
DOE OSTI2021

Design of microwave broadband CMOS transmitter and receiver circuits for MIR and ECEI plasma diagnostics

To efficiently determine the plasma electron density fluctuations using the MIR diagnostic technique, a 55–75 GHz 65 nm-CMOS transmitter has been developed where four separate intermediate frequency (IF) signals are up-converted, amplified, and then combined to generate an 8-tone RF output; a broadband 90 nm-CMOS receiver has also been constructed, which consists of an RF-low noise amplifier (LNA), mixer, and IF amplifier. The circuits and their corresponding modules will soon be deployed on the DIII-D and NSTX-U fusion devices. A 110–140 GHz 65 nm-CMOS receiver has also been designed, which is suitable for measuring the deep-core temperature fluctuations in the DIII-D tokamak using the electron cyclotron emission imaging diagnostic system. In addition to the RF-LNA/balun, mixer, and IF amplifier, an LO balun/tripler and driving amplifier are now included in this highly integrated circuit chip. By adopting the microwave and millimeterwave system-on-chip concept in the front-end system design, this paper demonstrates that compact transmitter and receiver modules can be easily built, which, in turn, facilitates array implementation and maintenance.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Performance testing of the iX Cameras iSpeed 727 high-speed camera

This work evaluated the iX Cameras iSpeed 727, a commercial CMOS-based continuous- recording high-speed camera. Various parameters of importance in the scheme of accurate time-resolved measurements and photonic quantification have been measured under controlled conditions on the bench, using state-of-the-art instrumentation. We will detail the procedures and results of the tests laid out to measure sensor sensitivity, linearity, signal-to-noise ratio and image lag. We also looked into the electronic shutter performance and accuracy, as exposure time is of particular interest to high-speed imaging. The results of the tests show that this camera matches or exceeds the performance of competing units in most aspects, but that, as is the case for other high-speed camera systems, corrections are necessary to make full use of the image data from a quantitative perspective.

42 ENGINEERING↗
NASA NTRS2012

Analog bus driver and multiplexer

For a source-follower signal chain, the ohmic drop in the selection switch causes unacceptable voltage offset, non-linearity, and reduced small signal gain. For an op amp signal chain, the required bias current and the output noise rises rapidly with increasing the array format due to a rapid increase in the effective capacitance caused by the Miller effect boosting up the contribution of the bus capacitance. A new switched source-follower signal chain circuit overcomes limitations of existing op-amp based or source follower based circuits used in column multiplexers and data readout. This will improve performance of CMOS imagers, and focal plane read-out integrated circuits for detectors of infrared or ultraviolet light.

Pain, Bedabrata↗
DOE OSTI2022

System-on-chip approach microwave imaging reflectometer on DIII-D tokamak

System-on-chip millimeter wave integrated circuit technology is used on the two-dimensional millimeter-wave imaging reflectometer (MIR) upgrade for density fluctuation imaging on the DIII-D tokamak fusion plasma. Customized CMOS chips have been successfully developed for the transmitter module and receiver module array, covering the 55–75 GHz working band. The transmitter module has the capability of simultaneously launching eight tunable probe frequencies (>0 dBm output power each). The receiver enclosure contains 12 receiver modules in two vertical lines. The quasi-optical local oscillator coupling of previous MIR systems has been replaced with an internal active frequency multiplier chain for improved local oscillator power delivery and flexible installation in a narrow space together with improved shielding against electromagnetic interference. The 55–75 GHz low noise amplifier, used between the receiver antenna and the first-stage mixer, significantly improves module sensitivity and suppresses electronics noise. The receiver module has a 20 dB gain improvement compared with the mini-lens approach and better than –75 dBm sensitivity, and its electronics noise temperature has been reduced from 55 000 K down to 11 200 K. Further, the V-band MIR system is developed for co-located multi-field investigation of MHD-scale fluctuations in the pedestal region with W-band electron cyclotron emission imaging on DIII-D tokamak.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS2018

Synthetic Tracking on a Small Telescope

Synthetic tracking uses high speed (up to 10 Hz) low noise (<2e-) large format sensors ~16 Mpix along with a multi-vector shift/add algorithm that coadds multiple image frames to increase the signal to noise ratio (SNR) needed to detect (if present) multiple moving objects in the field of view (FOV). We published the application of synthetic tracking to look for asteroids in 2014 (Shao 2014), but recently have applied it more as well to Earth orbiting objects. We have begun testing the data processing graphical processing unit (GPU) array with a small telescope, a 28 cm Celestron RASA telescope and a low cost low noise 16 Mpix CMOS camera at a dark site in California. This system is now operational with a 2 sqdeg FOV and a limiting magnitude between ~16-17.5 stellar magnitudes (mag) depending on a number of observational parameters for short integration times. The instrument can be used to search for NEOs, where we use much longer integration times to get sensitivity ~ 20.5 mag (at new moon). Synthetic tracking provides significant improvements in both sensitivity and astrometric accuracy.

Turyshev, Slava G.↗
NASA NTRS2008

Vertical Isolation for Photodiodes in CMOS Imagers

In a proposed improvement in complementary metal oxide/semi conduct - or (CMOS) image detectors, two additional implants in each pixel would effect vertical isolation between the metal oxide/semiconductor field-effect transistors (MOSFETs) and the photodiode of the pixel. This improvement is expected to enable separate optimization of the designs of the photodiode and the MOSFETs so as to optimize their performances independently of each other. The purpose to be served by enabling this separate optimization is to eliminate or vastly reduce diffusion cross-talk, thereby increasing sensitivity, effective spatial resolution, and color fidelity while reducing noise.

Pain, Bedabrata↗
NASA NTRS2002

Mosad and Stream Vision For A Telerobotic, Flying Camera System

Two full custom camera systems using the Multiplexed OverSample Analog to Digital (MOSAD) conversion technology for visible light sensing were built and demonstrated. They include a photo gate sensor and a photo diode sensor. The system includes the camera assembly, driver interface assembly, a frame stabler board with integrated decimeter and Windows 2000 compatible software for real time image display. An array size of 320X240 with 16 micron pixel pitch was developed for compatibility with 0.3 inch CCTV optics. With 1.2 micron technology, a 73% fill factor was achieved. Noise measurements indicated 9 to 11 bits operating with 13.7 bits best case. Power measured under 10 milliwatts at 400 samples per second. Nonuniformity variation was below noise floor. Pictures were taken with different cameras during the characterization study to demonstrate the operable range. The successful conclusion of this program demonstrates the utility of the MOSAD for NASA missions, providing superior performance over CMOS and lower cost and power consumption over CCD. The MOSAD approach also provides a path to radiation hardening for space based applications.

Mandl, William↗
NASA NTRS1993

Design of a Low-Light-Level Image Sensor with On-Chip Sigma-Delta Analog-to- Digital Conversion

The design and projected performance of a low-light-level active-pixel-sensor (APS) chip with semi-parallel analog-to-digital (A/D) conversion is presented. The individual elements have been fabricated and tested using MOSIS* 2 micrometer CMOS technology, although the integrated system has not yet been fabricated. The imager consists of a 128 x 128 array of active pixels at a 50 micrometer pitch. Each column of pixels shares a 10-bit A/D converter based on first-order oversampled sigma-delta (Sigma-Delta) modulation. The 10-bit outputs of each converter are multiplexed and read out through a single set of outputs. A semi-parallel architecture is chosen to achieve 30 frames/second operation even at low light levels. The sensor is designed for less than 12 e^- rms noise performance.

Mendis, Sunetra K.↗
DOE OSTI2022

Optics-Free Chip-Scale Intraoperative Imaging Using NIR-Excited Upconverting Nanoparticles

Here we present an optics-free CMOS image sensor that incorporates a novel time-gated dual-photodiode pixel design to allow filter- and lens-less image acquisition of near-infrared-excited (NIR-excited) upconverting nanoparticles. Recent biomedical advances have highlighted the benefits of NIR excitation, but NIR interaction with silicon has remained a challenge, even with high-performance optical blocking filters. Using a secondary diode and a dual-photodiode design, this sensor is able to remove the 100s of mV of NIR background on pixels and bring it down to single-digit mV level, nearing its noise floor of 2.2 mV rms, not achievable with any optical filter. Non-linear effects of background cancellation using the diode pair has been mitigated using an initial one-time pixel-level curve fitting and calibration in a post-processing setting. This imager comprises a highly linear 11 fF metal-oxide-metal (MOM) capacitor and includes integrated angle-selective gratings to reject oblique light and enhance sharpness. Each pixel also includes two distinct correlated double sampling schemes, to remove low frequency flicker noise and systematic offset in the datapath. We demonstrate the performance of this imager using pulsed NIR-excited upconverting nanoparticles on standard United-States-Air-Force (USAF) resolution targets and achieve an SNR of 15 dB, while keeping NIR background below 6 mV. This 36-by-80-pixel array measures only 2.3 mm by 4.8 mm and can be thinned down to 25 µm, allowing it to become surgically compatible with intraoperative instruments and equipment, while remaining optics-free.

42 ENGINEERING↗
DOE OSTI2023

A Cryogenic Readout IC with 100 KSPS in-Pixel ADC for Skipper CCD-in-CMOS Sensors

The Skipper CCD-in-CMOS Parallel Read-Out Circuit (SPROCKET) is a mixed-signal front-end design for the readout of Skipper CCD-in-CMOS image sensors. SPROCKET is fabricated in a 65 nm CMOS process and each pixel occupies a 50$\mu$m $\times$ 50$\mu$m footprint. SPROCKET is intended to be heterogeneously integrated with a Skipper-in-CMOS sensor array, such that one readout pixel is connected to a multiplexed array of nine Skipper-in-CMOS pixels to enable massively parallel readout. The front-end includes a variable gain preamplifier, a correlated double sampling circuit, and a 10-bit serial successive approximation register (SAR) ADC. The circuit achieves a sample rate of 100 ksps with 0.48 $\mathrm{e^-_{rms}}$ equivalent noise at the input to the ADC. SPROCKET achieves a maximum dynamic range of 9,000 $e^-$ at the lowest gain setting (or 900 $e^-$ at the lowest noise setting). The circuit operates at 100 Kelvin with a power consumption of 40 $\mu W$ per pixel. A SPROCKET test chip was submitted in September 2022, and test results will be presented at the conference.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Final Report for Grant

This is the final report for this project. The major objectives were to develop full models and standard cells of CMOS silicon photomultipliers (SiPM) for neutron detection applications. Specifically, the research seeks to replace photomultiplier tubes, used in neutron detection applications, with SiPMs containing integrated readout electronics fabricated in standard CMOS processes. The detectors improve on the detection efficiency, readout speed, resolution (sensitivity), and spatial resolution of current systems. In particular, this work involved collaboration with the instrument and detector group at ORNL who build detectors based on discrete commercially available PMTs and SiPMs. The SiPM detectors developed in this work are based on Perimeter Gated Single Photon Avalanche Diodes (PGSPAD). These devices have tunable breakdown voltage which affects other performance characteristics of the detectors. The ability of the detectors to have integrated readout and tune the noise floor and dynamic range in addition to offering a method for non-uniformity compensation in a compact form significantly impacts the imaging research field and includes the nuclear sciences field, circuits and systems field in addition to varied fields such as geography and biology/medicine.

42 ENGINEERING↗
NASA NTRS1992

Low energy CMOS for space applications

The current focus of NASA's space flight programs reflects a new thrust towards smaller, less costly, and more frequent space missions, when compared to missions such as Galileo, Magellan, or Cassini. Recently, the concept of a microspacecraft was proposed. In this concept, a small, compact spacecraft that weighs tens of kilograms performs focused scientific objectives such as imaging. Similarly, a Mars Lander micro-rover project is under study that will allow miniature robots weighing less than seven kilograms to explore the Martian surface. To bring the microspacecraft and microrover ideas to fruition, one will have to leverage compact 3D multi-chip module-based multiprocessors (MCM) technologies. Low energy CMOS will become increasingly important because of the thermodynamic considerations in cooling compact 3D MCM implementations and also from considerations of the power budget for space applications. In this paper, we show how the operating voltage is related to the threshold voltage of the CMOS transistors for accomplishing a task in VLSI with minimal energy. We also derive expressions for the noise margins at the optimal operating point. We then look at a low voltage CMOS (LVCMOS) technology developed at Stanford University which improves the power consumption over conventional CMOS by a couple of orders of magnitude and consider the suitability of the technology for space applications by characterizing its SEU immunity.

Panwar, Ramesh↗
DOE OSTI2022

Combined thermographic phosphor and digital image correlation (TP + DIC) for simultaneous temperature and strain measurements

We report thermographic phosphors (TP) are combined with stereo digital image correlation (DIC) in a novel diagnostic, TP + DIC, to measure full-field surface strains and temperatures simultaneously. The TP + DIC method is presented, including corrections for nonlinear CMOS camera detectors and generation of pixel-wise calibration curves to relate the known temperature to the ratio of pixel intensities between two distinct wavelength bands. Additionally, DIC is employed not only for strain measurements but also for accurate image registration between the two cameras for the two-colour ratio method approach of phosphoric thermography. TP + DIC is applied to characterize the thermo-mechanical response of 304L stainless steel dog bones during tensile testing at different strain rates. The dog bones are patterned for DIC with Mg 3 F 2 GeO 4 :Mn (MFG) via aerosol deposition through a shadow mask. Temperatures up to 425°K (150°C) and strains up to 1.0 mm/mm are measured in the localized necking region, with conservative noise levels of 10°K and 0.01 mm/mm or less. Finally, TP + DIC is compared to the more established method of combining infrared (IR) thermography with DIC (IR + DIC), with results agreeing favourably. Three topics of continued research are identified, including cracking of the aerosol-deposited phosphor DIC features, incomplete illumination for pixels on the border of the phosphor features, and phosphor emission evolution as a function of applied substrate strain. This work demonstrates the combination of phosphor thermography and DIC and lays the foundation for further development of TP + DIC for testing in combined thermo-mechancial environments.

304L stainless steel↗
DOE OSTI2021

A domain wall-magnetic tunnel junction artificial synapse with notched geometry for accurate and efficient training of deep neural networks

Inspired by the parallelism and efficiency of the brain, several candidates for artificial synapse devices have been developed for neuromorphic computing, yet a nonlinear and asymmetric synaptic response curve precludes their use for backpropagation, the foundation of modern supervised learning. Spintronic devices—which benefit from high endurance, low power consumption, low latency, and CMOS compatibility—are a promising technology for memory, and domain-wall magnetic tunnel junction (DW-MTJ) devices have been shown to implement synaptic functions such as long-term potentiation and spike-timing dependent plasticity. In this work, we propose a notched DW-MTJ synapse as a candidate for supervised learning. Using micromagnetic simulations at room temperature, we show that notched synapses ensure the non-volatility of the synaptic weight and allow for highly linear, symmetric, and reproducible weight updates using either spin transfer torque (STT) or spin–orbit torque (SOT) mechanisms of DW propagation. We use lookup tables constructed from micromagnetics simulations to model the training of neural networks built with DW-MTJ synapses on both the MNIST and Fashion-MNIST image classification tasks. Accounting for thermal noise and realistic process variations, the DW-MTJ devices achieve classification accuracy close to ideal floating-point updates using both STT and SOT devices at room temperature and at 400 K. Our work establishes the basis for a magnetic artificial synapse that can eventually lead to hardware neural networks with fully spintronic matrix operations implementing machine learning.

42 ENGINEERING↗
DOE OSTI2025

Gate-Tunable Short-Wave Infrared Polycrystalline GeSn Phototransistors on Noncrystalline Substrates

GeSn is a group-IV alloy with immense potential to advance microelectronics technology due to its intrinsic compatibility with existing Si CMOS processes. With a sufficiently high Sn composition, GeSn is classified as a direct bandgap semiconductor. Polycrystalline GeSn holds several additional advantages, including its significantly lower synthesis cost compared to its epitaxial counterpart, as well as the versatility to grow these films on a variety of substrates. Here, in this work, we present a polycrystalline thin-film GeSn phototransistor on a fused silica substrate with a Sn composition of ~10%, showing a photoresponse in the short-wave infrared wavelength range, critical for emerging sensing applications. This device shows a gate-tunable response, with responsivities approaching up to 1.7 mA/W with only a 30 nm-thick GeSn layer. Furthermore, phototransistors offer additional adaptability through gating, which allows for the reduction of dark current. This not only enhances the signal-to-noise ratio but also offers more flexible integration with various image sensor readout implementations using different substrates. The specific detectivity of this phototransistor is within an order of magnitude of those of previously reported GeSn photodetectors grown by molecular beam epitaxy and chemical vapor deposition, even though the absorber is 3 to 20× thinner while the electrode spacing for photocarrier transport is approximately 15× longer than the carrier diffusion length in this work, showing great potential benefits of extending similar device structures to epitaxial GeSn layers. As these GeSn phototransistors utilize a noncrystalline substrate, our work establishes a fundamentally more versatile path toward monolithically integrated GeSn-based photodetectors for next-generation multimodal sensors.

36 MATERIALS SCIENCE↗
NASA NTRS2011

NASA Tech Briefs, February 2011

Topics covered include: Multi-Segment Radius Measurement Using an Absolute Distance Meter Through a Null Assembly; Fiber-Optic Magnetic-Field-Strength Measurement System for Lightning Detection; Photocatalytic Active Radiation Measurements and Use; Computer Generated Hologram System for Wavefront Measurement System Calibration; Non-Contact Thermal Properties Measurement with Low-Power Laser and IR Camera System; SpaceCube 2.0: An Advanced Hybrid Onboard Data Processor; CMOS Imager Has Better Cross-Talk and Full-Well Performance; High-Performance Wireless Telemetry; Telemetry-Based Ranging; JWST Wavefront Control Toolbox; Java Image I/O for VICAR, PDS, and ISIS; X-Band Acquisition Aid Software; Antimicrobial-Coated Granules for Disinfecting Water; Range 7 Scanner Integration with PaR Robot Scanning System; Methods of Antimicrobial Coating of Diverse Materials; High-Operating-Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength; A Model of Reduced Kinetics for Alkane Oxidation Using Constituents and Species for N-Heptane; Thermally Conductive Tape Based on Carbon Nanotube Arrays; Two Catalysts for Selective Oxidation of Contaminant Gases; Nanoscale Metal Oxide Semiconductors for Gas Sensing; Lightweight, Ultra-High-Temperature, CMC-Lined Carbon/Carbon Structures; Sample Acquisition and Handling System from a Remote Platform; Improved Rare-Earth Emitter Hollow Cathode; High-Temperature Smart Structures for Engine Noise Reduction and Performance Enhancement; Cryogenic Scan Mechanism for Fourier Transform Spectrometer; Piezoelectric Rotary Tube Motor; Thermoelectric Energy Conversion Technology for High-Altitude Airships; Combustor Computations for CO2-Neutral Aviation; Use of Dynamic Distortion to Predict and Alleviate Loss of Control; Cycle Time Reduction in Trapped Mercury Ion Atomic Frequency Standards; and A (201)Hg+ Comagnetometer for (199)Hg+ Trapped Ion Space Atomic Clocks.

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