Thermoelectric Microcoolers for Thermal Management Applications
Explore the source record for details and available documents.
microcooler CVD diamond AIN↗
SEARCH · Search NASA
Results for “CVD diamond”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Radio-frequency plasma chemical vapor deposition growth of diamond
Plasma chemical vapor deposition (CVD) at 13.56 MHz has been used to produce diamond particles in two different inductively coupled systems with a mixture of methane and hydrogen. The effect of a diamondlike carbon (DLC) overcoating on silicon, niobium, and stainless-steel substrates has been investigated and in the case of silicon has been found to enhance particle formation as compared to uncoated polished silicon. In addition the use of carbon monoxide in hydrogen has been found to produce well-defined individual faceted particles as well as polycrystalline films on quartz and DLC coated silicon substrates. Plasma CVD is a competitive approach to production of diamond films. It has the advantage over microwave systems of being easily scaled to large volume and high power.
Meyer, Duane E.↗
Synthesizing Diamond from Liquid Feedstock
A relatively economical method of chemical vapor deposition (CVD) has been developed for synthesizing diamond crystals and films. Unlike prior CVD methods for synthesizing diamond, this method does not require precisely proportioned flows of compressed gas feedstocks or the use of electrical discharges to decompose the feedstocks to obtain free radicals needed for deposition chemical reactions. Instead, the feedstocks used in this method are mixtures of common organic liquids that can be prepared in advance, and decomposition of feedstock vapors is effected simply by heating. The feedstock used in this method is a solution comprising between 90 and 99 weight percent of methanol and the balance of one or more other oxyhydrocarbons that could include ethanol, isopropanol, and/or acetone. This mixture of compounds is chosen so that dissociation of molecules results in the desired proportions of carbon-containing radicals (principally, CH3) and of OH, H, and O radicals. Undesirably, the CVD temperature and pressure conditions thermodynamically favor the growth of graphite over the growth of diamond. The H radicals are desirable because they help to stabilize the growing surface of diamond by shifting the thermodynamic balance toward favoring the growth of diamond. The OH and O radicals are desirable because they preferentially etch graphite and other non-diamond carbon, thereby helping to ensure the net deposition of pure diamond. The non-methanol compounds are included in the solution because (1) methanol contains equal numbers of C and O atoms; (2) an excess of C over O is needed to obtain net deposition of diamond; and (3) the non-methanol molecules contain multiple carbon atoms for each oxygen atom and thus supply the needed excess carbon A typical apparatus used in this method includes a reservoir containing the feedstock liquid and a partially evacuated stainless-steel reaction chamber. The reservoir is connected to the chamber via tubing and a needle valve or other suitable flow controller. When the liquid enters the low-pressure environment inside the chamber, it evaporates to form a vapor mixture of the same chemical composition. In addition to the inlet for the feedstock liquid, the chamber is fitted with an outlet connected to a vacuum pump (not shown) through a throttle valve (also not shown) that is automatically controlled to keep the pressure at or near the required value throughout the deposition process. Inside the chamber, a spiral filament made of tungsten, tantalum, graphite, or other high-melting-temperature material is electrically heated to a temperature >2,000 C high enough to cause dissociation of vapor molecules into the aforementioned radicals. A deposition substrate typically, a diamond-polished silicon wafer about 2.5 cm square is positioned about 2 cm away from the filament. The exact location of the substrate is chosen so that the substrate becomes heated by the filament to a deposition temperature in the approximate range of 800 to 1,000 C.
Tzeng, Yonhua↗
Diamond thermoluminescence properties of different chondrites
It was found that thermoluminescence (TL) glows of diamonds depend on the origin of diamonds and the chondrite metamorphism degree. The investigation of TL of diamonds was continued and the results for diamonds from Murchison CM2, Krymka LL3.0, Kainsaz CO3, and Abee E4 were considered. The diamonds synthesized by CVD-process (samples 133, 159) and by detonation from soot (DDS-B14-89) were also analyzed for comparison. Before the TL measuring samples were annealed at approximately 350 C for a few seconds and then irradiated by gamma-rays of Cs-137 up to dose approximately 200 krad. TL-measurements were performed in the air atmosphere on the standard equipment. TL data for samples are shown. TL glow for some diamonds are also presented.
Fisenko, A. V.↗
CIRS-lite, a Fourier Transform Spectrometer for Low-Cost Planetary Missions
Passive spectroscopic remote sensing of planetary atmospheres and surfaces in the thermal infrared is a powerful tool for obtaining information about surface and atmospheric temperatures, composition, and dynamics (via the thermal wind equation). Due to its broad spectral coverage, the Fourier transform spectrometer (FTS) is particularly suited to the exploration and discovery of molecular species. NASA's Goddard Space Flight Center (GSFC) developed the CIRS (Composite Infrared Spectrometer) FTS for the NASA/ESA Cassini mission to the Saturnian system. CIRS observes Saturn, Titan, icy moons such as Enceladus, and the rings in thermal self-emission over the spectral range of 7 to 1000 ell11. CIRS has given us important new insights into stratospheric composition and jets on Jupiter and Saturn, the cryo-geyser and thermal stripes on Enceladus, and the winter polar vortex on Titan. CIRS has a mass of 43 kg, contrasted with the earlier GSFC FTS, pre-Voyager IRIS (14 kg). Future low-cost planetary missions will have very tight constraints on science payload mass, thus we must endeavor to return to IRIS-level mass while maintaining CIRS-level science capabilities ("do more with less"). CIRS-lite achieves this by pursuing: a) more sensitive infrared detectors (high Tc superconductor) to enable smaller optics. b) changed long wavelength limit from 1000 to 300 microns to reduce diffraction by smaller optics. c) CVD (chemical vapor deposition) diamond beam-splitter for broad spectral coverage. d) single FTS architecture instead of a dual FTS architecture. e) novel materials, such as single crystal silicon for the input telescope primary.
Brasunas, J.↗
Laser damage threshold of diamond films
The possibility that diamond films may inhibit laser-induced damage to optical components in laser systems films was investigated by measuring laser damage thresholds of free-standing diamond film windows, diamond films deposited on silicon substrates, and bare silicon substrate. Polycrystalline diamond films were deposited using a dc plasma-enhanced CVD process. It was found that free-standing diamond films had the highest laser damage threshold at 1064 nm. For a diamond film of 630 nm, the damage threshold was found to be 7 J/sq cm, as compared to a damage threshold of 4.5 J/sq cm for bare silicon, and a low value of 1.5 J/sq cm for the film/substrate combination. The damage mechanism is considered to involve melting or dielectric breakdown induced by laser radiation. The low value of the film/substrate combination is attributed to film stress and conditions of film deposition.
Albin, Sacharia↗
Diamond and diamondlike carbon as wear-resistant, self-lubricating coatings for silicon nitride
Recent work on the friction and wear properties of as-deposited fine-grain diamond, polished coarse-grain diamond, and as-deposited diamondlike carbon (DLC) films in humid air at a relative humidity of approximately 40 percent and in dry nitrogen is reviewed. Two types of chemical vapor deposition (CVD) processes are used to deposit diamond films on silicon nitride (Si3N4) substrates: microwave-plasma and hot-filament. Ion beams are used to deposit DLC films of Si3N4 substrates. The diamond and DLC films in sliding contact with hemispherical bare Si3N4 pins have low steady-state coefficients of friction (less than 0.2) and low wear rates (less than 10(exp -7) mm(exp 2)/N-m), and thus, can be used effectively as wear-resistant, self-lubricating coatings for Si3N4 in the aforementioned two environments.
Miyoshi, Kazuhisa↗
Application of Chlorine-Assisted Chemical Vapor Deposition of Diamond at Low Temperatures
Low temperature deposition of diamond has been achieved by a chlorine-assisted diamond chemical vapor deposition (CA-CVD) process. This method begins with the thermal dissociation of molecular chlorine into atomic chlorine in a resistively heated graphite furnace at temperatures between 1300 and 1500 deg. C. The atomic chlorine, upon mixing, subsequently reacts with molecular hydrogen and hydrocarbons. The rapid exchange reactions between the atomic chlorine, molecular hydrogen, and hydrocarbons give rise to the atomic hydrogen and carbon precursors required for diamond deposition. Homoepitaxial diamond growth on diamond substrates has been studied over the substrate temperature range of 100-950 C. It was found that the diamond growth rates are approximately 0.2 microns/hr in the temperature range between 102 and 300 C and that the growth rates do not decrease significantly with a decrease in substrate temperature. This is unique because the traditional diamond deposition using H2/CH4 systems usually disappears at substrate temperatures below approx. 500 deg. C. This opens up a possible route to the deposition of diamond on low-melting point materials such as aluminum and its alloys.
Pan, Chenyu↗
Diamond films for laser hardening
Laser-damage experiments were performed on free-standing polycrystalline diamond films prepared by plasma-enhanced CVD. The high laser-induced stress resistance found for this material makes it useful for thin-film coatings for laser optics. Results for diamond-coated silicon substrates demonstrate the enhanced damage threshold imparted by diamond thin-film coatings to materials susceptible to laser damage.
Albin, S.↗
Electron cyclotron resonance deposition of diamond-like films
Electron cyclotron resonance (ECR) microwave plasma CVD has been developed at low pressures (0.0001 - 0.01 torr) and at ambient and high substrate temperatures (up to 750 C), to achieve large-area (greater than 4 in. diameter) depositions of diamondlike amorphous carbon (a - C:H) films. The application of a RF bias to the substrate stage, which induces a negative self-bias voltage, is found to play a critical role in determining carbon bonding configurations and in modifying the film morphology. There are two distinct types of ECR-deposited diamondlike films. One type of diamondlike film exhibits a Raman spectrum consisting of broad and overlapping, graphitic D (1360/cm, line width = 280/cm) and G (1590/cm, line width 140/cm) lines, and the other type has a broad Raman peak centered at appoximately 1500/cm. Examination of plasma species by optical emission spectroscopy shows no correlation between the CH-asterisk emission intensity and the deposition rate of diamondklike films.
Shing, Y. H.↗
Nature and origin of interstellar diamond from the Allende CV3 meteorite
Data and experimental evidence which support the contention that the C delta diamonds may result from grain-grain collisions in supernova shocks in the interstellar medium are presented. Fragments of the Allende CV3 chondrite were acid-treated. A whitish powder was obtained. For the Analytical Electron Microscopy (AEM) a small drop of ethanol suspension was transferred onto holey carbon support films on 3 mm EM grids. The AEM was performed on transmission-thin fragments of the material which overlay holes in the film, to eliminate interference from the substrate. Electron Spectroscopy for Chemical Analysis (ESCA) was performed on a large aliquot of C. Diamond was identified by selected area electron diffraction. Scanning Transmission Electron Microscope / Energy Dispersive X-ray (STEM-EDS) microanalyses of the C delta diamond, using a light-element detector, show that oxygen and possibly nitrogen are the only impurities consistently present. ESCA spectra from bulk C delta material confirm the presence of N at a level of 0.35 percent or less. Under UV irradiation a yellow-red fluorescence is observed, consistent with that of natural diamonds containing substitutional N. Electron Energy Loss Spectra (EELS) were recorded at 2 eV resolution from the C delta diamond, high pressure synthetic diamond, a diamond film produced in a low pressure plasma by chemical vapor deposition (CVD) on a heated silicon substrate (Roy, 1987), graphite, and amorphous arc sputtered carbon. Comparison of the carbon K edge shape and fine structure shows the Allende C delta phase to be largely diamond, but with a significant pre-edge absorption feature indicative of transitions of C 1s electrons into pi asterisk orbitals which are absent in the purely sp(3)-bonded diamond but present in graphite and amorphous carbon.
Blake, David↗
Electrical Resistivity of Natural Diamond and Diamond Films Between Room Temperature and 1200 C: Status Update
The electrical resistivity of diamond films has been measured between room temperature and 1200 C. The films were grown by either microwave Plasma CVD or combustion flame at three different places. The resistivities of the current films are compared to those measured for both natural IIa diamond and films grown only one to two years ago.
Electricity Diamond↗
Diamond Nucleation Using Polyethene
The invention presents a simple, non-destructive and non-abrasive method of diamond nucleation using polyethene. It particularly describes the nucleation of diamond on an electrically viable substrate surface using polyethene via chemical vapor deposition (CVD) technique in a gaseous environment.
Morell, Gerardo↗
High energy collimating fine grids
The objective of this project was to demonstrate the fabrication of extremely tight tolerance collimating grids using a high-Z material, specifically tungsten. The approach taken was to fabricate grids by a replication method involving the coating of a silicon grid substrate with tungsten by chemical vapor deposition (CVD). A negative of the desired grid structure was fabricated in silicon using highly wafering techniques developed for the semiconductor industry and capable of producing the required tolerances. Using diamond wafering blades, a network of accurately spaced slots was machined into a single-crystal silicon surface. These slots were then filled with tungsten by CVD, via the hydrogen reduction of tungsten hexafluoride. Following tungsten deposition, the silicon negative was etched away to leave the tungsten collimating grid structure. The project was divided into five tasks: (1) identify materials of construction for the replica and final collimating grid structures; (2) identify and implement a micromachining technique for manufacturing the negative collimator replicas (performed by NASA/JPL); (3) develop a CVD technique and processing parameters suitable for the complete tungsten densification of the collimator replicas; (4) develop a chemical etching technique for the removal of the collimator replicas after the tungsten deposition process; and (5) fabricate and deliver tungsten collimating grid specimens.
Arrieta, Victor M.↗
Computational Studies of the Interaction of H/H2 with Diamond and Silicon Surfaces
The interaction of hydrogen atoms and molecules with diamond and silicon surfaces is important in several important applications. Two areas that we are interested are: 1) tribology (molecular level friction) and 2) the role of H atoms in silicon chemical vapor deposition (CVD). In the tribology area, H atoms can be used to tie off dangling bonds, which otherwise form bonds between adjacent surfaces, and lead to resistance to sliding the surfaces by each other. Processes which are important in understanding molecular level friction include barriers to addition of H/H2 to the surface and barriers to migration of H atoms on the surface. In the silicon CVD area, we have studied the process of H2 elimination from the 100 surface of silicon. Cluster models for the dime surfaces of diamond are presented. The unrelaxed 100 surface has carbene like surface carbon atoms; however, for the relaxed surface these dimerize to give rows of surface dimers and there is a significant amount of p bonding between the radical orbitals of the dimer. The 110 surface has zig-zag rows of carbon atoms with a dangling bond on each carbon atom. These dangling bonds are hybridized away from each other and thus interact less strongly than for the 100 surface. Finally, the 111 surface has surface C atoms arranged in a triangular pattern and the surface dangling bonds are well separated from each other (second nearest neighbor distance) leading to almost no interaction between adjacent dangling bonds. These qualitative features may be quantified by computing the overlap of adjacent dangling bonds in a GVB(pp) calculation. The overlaps are 0.462, 0.292, and 0.016 for the diamond 100, 110, and 111 surfaces, respectively.
Walch, Stephen P.↗
Diamond Research Overview and a Model for Lab Experiments Using Oxyacetylene Torch
High pressure synthetic diamonds have now been a commercial product for over 40 years. Russian scientists invented the chemical vapor deposition (CVD) process 30 years ago, while the Japanese followed 10 years later and the U.S. was introduced to it 10 years after that. The new syntheses focus is on liquid and solid phase approaches. There are three CVD processes: microwave plasma, hot filament, and oxy-acetylene torch. The oxy-acetylene torch is an excellent materials synthesis lab experiment, emphasizing the simplicity of the science.
Roy, Rustum↗
NASA Tech Briefs, June 2007
Topics covered include: High-Accuracy, High-Dynamic-Range Phase-Measurement System; Simple, Compact, Safe Impact Tester; Multi-Antenna Radar Systems for Doppler Rain Measurements; 600-GHz Electronically Tunable Vector Measurement System; Modular Architecture for the Measurement of Space Radiation; VLSI Design of a Turbo Decoder; Architecture of an Autonomous Radio Receiver; Improved On-Chip Measurement of Delay in an FPGA or ASIC; Resource Selection and Ranking; Accident/Mishap Investigation System; Simplified Identification of mRNA or DNA in Whole Cells; Printed Multi-Turn Loop Antennas for RF Biotelemetry; Making Ternary Quantum Dots From Single-Source Precursors; Improved Single-Source Precursors for Solar-Cell Absorbers; Spray CVD for Making Solar-Cell Absorber Layers; Glass/BNNT Composite for Sealing Solid Oxide Fuel Cells; A Method of Assembling Compact Coherent Fiber-Optic Bundles; Manufacturing Diamond Under Very High Pressure; Ring-Resonator/Sol-Gel Interferometric Immunosensor; Compact Fuel-Cell System Would Consume Neat Methanol; Algorithm Would Enable Robots to Solve Problems Creatively; Hypothetical Scenario Generator for Fault-Tolerant Diagnosis; Smart Data Node in the Sky; Pseudo-Waypoint Guidance for Proximity Spacecraft Maneuvers; Update on Controlling Herds of Cooperative Robots; and Simulation and Testing of Maneuvering of a Planetary Rover.
Source record↗
Micro-Raman Analysis of Irradiated Diamond Films
Owing to its unique and robust physical properties, diamond is a much sought after material for use in advanced technologies, even in Microelectromechanical Systems (MEMS). The volume and weight savings promised by MEMS-based devices are of particular interest to spaceflight applications. However, much basic materials science research remains to be completed in this field. Results of micro-Raman analysis of proton (10(exp 15) - 10(exp 17) H(+)/sq cm doses) irradiated chemical vapor deposited (CVD) films are presented and indicate that their microstructure is retained even after high radiation exposure.
Newton, Robert L.↗