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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3

Novel Photon-Counting Detectors for Free-Space Communication

We present performance data for novel photon-counting detectors for free space optical communication. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We present and compare dark count, photon-detection efficiency, wavelength response and communication performance data for these detectors. We successfully measured real-time communication performance using both the 2 detected-photon threshold and AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects. The HgCdTe APD array routinely demonstrated photon detection efficiencies of greater than 50% across 5 arrays, with one array reaching a maximum PDE of 70%. We performed high-resolution pixel-surface spot scans and measured the junction diameters of its diodes. We found that decreasing the junction diameter from 31 micrometers to 25 micrometers doubled the e- APD gain from 470 for an array produced in the year 2010 to a gain of 1100 on an array delivered to NASA GSFC recently. The mean single-photon SNR was over 12 and the excess noise factors measurements were 1.2-1.3. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output.

Photons↗

Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors

SEU from heavy-ions is measured for SOI PowerPC microprocessors. Results for 0.13 micron PowerPC with 1.1V core voltages increases over 1.3V versions. This suggests that improvement in SEU for scaled devices may be reversed. In recent years there has been interest in the possible use of unhardened commercial microprocessors in space because of their superior performance compared to hardened processors. However, unhardened devices are susceptible to upset from radiation space. More information is needed on how they respond to radiation before they can be used in space. Only a limited number of advanced microprocessors have been subjected to radiation tests, which are designed with lower clock frequencies and higher internal core voltage voltages than recent devices [1-6]. However the trend for commercial Silicon-on-insulator (SOI) microprocessors is to reduce feature size and internal core voltage and increase the clock frequency. Commercial microprocessors with the PowerPC architecture are now available that use partially depleted SOI processes with feature size of 90 nm and internal core voltage as low as 1.0 V and clock frequency in the GHz range. Previously, we reported SEU measurements for SOI commercial PowerPCs with feature size of 0.18 and 0.13 m [7, 8]. The results showed an order of magnitude reduction in saturated cross section compared to CMOS bulk counterparts. This paper examines SEUs in advanced commercial SOI microprocessors, focusing on SEU sensitivity of D-Cache and hangs with feature size and internal core voltage. Results are presented for the Motorola SOI processor with feature sizes of 0.13 microns and internal core voltages of 1.3 and 1.1 V. These results are compared with results for the Motorola SOI processors with feature size of 0.18 microns and internal core voltage of 1.6 and 1.3 V.

Irom, Farokh↗

Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions. Contrast extinction analysis of these dislocation lines reveals they are edge type basal plane dislocations that track the growth direction. Polytype phase transition and stacking faults were observed by high-resolution TEM (HRTEM), in agreement with SWBXT and Raman scattering.

Single Crystal↗

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

Neudeck, Philip G.↗

Assessments of Mechanical and Life Limiting Properties of Two Candidate Silicon Nitrides for Stirling Convertor Heater Head Applications

NASA Glenn Research Center is developing advanced technology for Stirling convertors with a target of significantly improving the specific power and efficiency of the convertor and overall generator for Mars rovers and deep space missions. One specific approach to the target has been recognized as the use of appropriate high-temperature materials. As a series of ceramic material approaches in Advanced Stirling Convertor Development Program in fiscal year 2005, two commercial, structural silicon nitrides AS800 (Honeywell, Torrence, California) and SN282 (Kyocera, Vancouver, Washington) were selected and their mechanical and life limiting properties were characterized at 1050 C in air. AS800 exhibited both strength and Weibull modulus greater than SN282. A life limiting phenomenon was apparent in AS800 with a low slow crack growth parameter n = 15; whereas, a much increased resistance to slow crack growth was found in SN282 with n greater than 100. Difference in elastic modulus and thermal conductivity was negligible up to 1200 C between the two silicon nitrides. The same was true for the coefficient of thermal expansion up to 1400 C.

Choi, Sung R.↗

Micro-sensors for in-situ meteorological measurements

Improved in-situ meteorological measurements are needed for monitoring the weather and climate of the terrestrial and Martian atmospheres. We have initiated a program to assess the feasibility and utility of micro-sensors for precise in-situ meteorological measurements in these environments. Sensors are being developed for measuring pressure, temperature, wind velocity, humidity, and aerosol amounts. Silicon micro-machining and large scale integration technologies are being used to make sensors that are small, rugged, lightweight, and require very little power. Our long-term goal is to develop very accurate miniaturized sensors that can be incorporated into complete instrument packages or 'micro weather stations,' and deployed on a variety of platforms. If conventional commercially available silicon production techniques can be used to fabricate these sensor packages, it will eventually be possible to mass-produce them at low cost. For studies of the Earth's troposphere and stratosphere, they could be deployed on aircraft, dropsondes, radiosondes, or autonomous surface stations at remote sites. Improved sensor accuracy and reduced sensor cost are the primary challenges for these applications. For studies of the Martian atmosphere, these sensor packages could be incorporated into the small entry probes and surface landers that are being planned for the Mars Environmental SURvey (MESUR) Mission. That decade-long program will deploy a global network of small stations on the Martian surface for monitoring meteorological and geological processes. Low mass, low power, durability, large dynamic range and calibration stability are the principal challenges for this application. Our progress on each of these sensor types is presented.

Crisp, David↗

Advanced Silicon Avalanche Photodiodes on NASA's Global Ecosystem Dynamics Investigation (GEDI) Mission

Silicon Avalanche Photodiodes (APDs) are used in NASA’s Global Ecosystem Dynamics Investigation (GEDI) which was launched in December 2018 and is currently measuring the Earth’s vegetation vertical structure from the International Space Station. The APDs were specially made for space lidar with a much lower hole-to-electron ionization coefficient ratio (k-factor ~0.008) than that of commercially available silicon APDs in order to reduce the APD excess noise from the randomness of the avalanche gain. A silicon heater resistor was used under the APD chip to heat the device up to 70°C and improve its quantum efficiency at 1064 nm laser wavelength while maintaining a low dark current such that the overall signal to noise ratio is improved. Special APD protection circuits were used to raise the overload damage threshold to prevent device damage from strong laser return by specular surfaces, such as still water bodies, and space radiation events. The APD and a hybrid transimpedance amplifier circuit were hermetically sealed in a package with a sufficiently low leak rate to ensure multi-year operation lifetime in space. The detector assemblies underwent a series of pre-launch tests per NASA Goddard Environmental Verification Standard for space qualification. They have performed exactly as expected with GEDI in orbit. A detailed description of the GEDI detector design, signal and noise model, and test results are presented in this paper.

Sun, Xiaoli↗

A follow-on study for miniature solid-state pressure transducer

The activities of a developmental program to design, fabricate and test an absolute pressure transducer based upon the piezojunction properties of silicon are summarized. The prime problem addressed is the development of a housing capable of applying the high stress levels needed for sensitive piezojunction operation but at the same, free from the creep effects and the fragility that limit the usefulness of previous designs. The first part of the report describes the initial fabrication and test and reviews the theory of sensor performance. The second part incorporates two recommendations of the first part (the use of commercially manufactured silicon planar mesa diodes and the adoption of an all-silicon structure for loading) and presents some preliminary test data on the transducers thus fabricated. These initial measurements show much improved performance over any previously fabricated piezojunction transducers but testing is incomplete and several problems in manufacturing technology remain.

Source record↗

Development of Low Cost Contacts to Silicon Solar Cells

Commercial electroless Cu solutions were used. Satisfactory adhesion (and fairly good cell performance) resulted from the use of thin layers of barrier metals such as Au, Cr or Pd. In these tests, photoresist masks were used to contact silicon P-type slices with diffused N+ and alloyed P+ surfaces; and electrolytic Cu solution was used to build up the contact thickness to provide good cell behavior. In addition some cells with evaporated Cr-Cu contacts were also made (along with evaporated Ti-Pd-Ag contacts as controls), with the intention of subjecting cells to gradually increasing heat-treatments, to determine whether Cu causes the cells to be inherently unstable.

Iles, P. A.↗

Formulation/cure technology for ultrahigh molecular weight silphenylene-siloxane polymers

Molecular weights above one million were achieved for methylvinylsilphenylene-siloxane terpolymers using a two-stage polymerization technique which was successfully scaled up to 200 grams. The resulting polymer was vulcanized by two different formulations and compared to an identically formulated commercial methylvinyl silicone on the basis of ultimate strength, Young's modulus, percent elongation at failure, and tear strength. Relative thermal/oxidative stabilities of the elastomers were assessed by gradient and isothermal thermogravimetric analyses performed in both air and nitrogen. The experimental elastomer exhibited enhanced thermal/oxidative stability and possed equivalent or superior mechanical properties. The effect of variations in prepolymer molecular weight on mechanical properties was also investigated.

Hundley, N. H.↗

Commerical module test program

The results are presented for a program of qualification testing of commercial crystalline silicon modules from nine manufacturers in five countries. The outcome demonstrated the effective role of the Block 5 Qualification Tests in the development of reliable modules.

Smokier, M. I.↗

The effect of atomic oxygen on altered and coated Kapton surfaces for spacecraft applications in low earth orbit

A commercially applied silicon oxide coating on Kapton and an alternative material with Si groups on the surface were evaluated for durability with respect to atomic oxygen in both a random plasma and a directed atomic oxygen beam system. It is found that the alternative to Kapton, DuPont 93-1, is not adequately protecting to last 15 years in LEO, the desired operation time of the Space Station Freedom. The coated Kapton is considered to be promising due to the adherence of the coating and lack of extensive tearing at undercut defect sites. Fewer defects in the coating and elimination of long scratches and uncoated areas would substantially improve the durability of this material.

Rutledge, Sharon K.↗

Increasing Precision Of Temperature Sensors Of Liquid H2

Commercial silicon-diode temperature sensors intended for use in boiling or nearly boiling liquid hydrogen at temperatures near 37 degrees R recalibrated to greater precision by method involving careful attention to details of design, operation, and computation. Method based on fundamental electrical and thermodynamic principles and good engineering practice, also applicable to recalibration of other temperature sensors intended for use in other boiling or nearly boiling liquids.

Dempsey, Paula J.↗

Pointing Reference Scheme for Free-Space Optical Communications Systems

A scheme is proposed for referencing the propagation direction of the transmit laser signal in pointing a free-space optical communications terminal. This recently developed scheme enables the use of low-cost, commercial silicon-based sensors for tracking the direction of the transmit laser, regardless of the transmit wavelength. Compared with previous methods, the scheme offers some advantages of less mechanical and optical complexity and avoids expensive and exotic sensor technologies. In free-space optical communications, the transmit beam must be accurately pointed toward the receiver in order to maintain the communication link. The current approaches to achieve this function call for part of the transmit beam to be split off and projected onto an optical sensor used to infer the pointed direction. This requires that the optical sensor be sensitive to the wavelength of the transmit laser. If a different transmit wavelength is desired, for example to obtain a source capable of higher data rates, this can become quite impractical because of the unavailability or inefficiency of sensors at these wavelengths. The innovation proposed here decouples this requirement by allowing any transmit wavelength to be used with any sensor. We have applied this idea to a particular system that transmits at the standard telecommunication wavelength of 1,550 nm and uses a silicon-based sensor, sensitive from 0.5 to 1.0 micrometers, to determine the pointing direction. The scheme shown in the figure involves integrating a low-power 980-nm reference or boresight laser beam coupled to the 1,550-nm transmit beam via a wavelength-division-multiplexed fiber coupler. Both of these signals propagate through the optical fiber where they achieve an extremely high level of co-alignment before they are launched into the telescope. The telescope uses a dichroic beam splitter to reflect the 980- nm beam onto the silicon image sensor (a quad detector, charge-coupled device, or active-pixel-sensor array) while the 1,550- nm signal beam is transmitted through the optical assembly toward the remotely located receiver. Since the 980-nm reference signal originates from the same single-mode fiber-coupled source as the transmit signal, its position on the sensor is used to accurately determine the propagation direction of the transmit signal. The optics are considerably simpler in the proposed scheme due to the use of a single aperture for transmitting and receiving. Moreover, the issue of mechanical misalignment does not arise because the reference signal and transmitted laser beams are inherently co-aligned. The beam quality of the 980-nm reference signal used for tracking is required to be circularly symmetric and stable at the tracking-plane sensor array in order to minimize error in the centroiding algorithm of the pointing system. However, since the transmit signal is delivered through a fiber that supports a single mode at 1,550 nm, propagation of higher order 980-nm modes is possible. Preliminary analysis shows that the overall mode profile is dominated by the fundamental mode, giving a near symmetric profile. The instability of the mode was also measured and found to be negligible in comparison to the other error contributions in the centroid position on the sensor array.

Wright, Malcolm↗

Development of Large-Format Lithium-Ion Cells with Silicon Anode and Low Flammable Electrolyte

NASA is developing safe, high energy and high capacity lithium-ion cell designs and batteries for future missions under NASAs Advanced Space Power System (ASPS) project. Advanced cell components, such as high specific capacity silicon anodes and low-flammable electrolytes have been developed for improving the cell specific energy and enhancing safety. To advance the technology readiness level, we have developed large-format flight-type hermetically sealed battery cells by incorporating high capacity silicon anodes, commercially available lithium nickel, cobalt, aluminum oxide (NCA) cathodes, and low-flammable electrolytes. In this report, we will present the performance results of these various battery cells. In addition, we will also discuss the post-test cell analysis results as well.

lithium-ion cell↗

A Comparison of the Measured Scattering Matrix Elements of Polydisperse Systems of Irregular Particles with the Matrix Elements Calculated for Spheres that Have the Same Distribution of Projected Areas

The elements of the scattering or Mueller Matrix for three polydisperse systems of irregular, randomly-oriented particles have been measured in absolute terms as a function of scattering angle for several visible wavelengths. The samples consisted of commercially available silicon dioxide particles that fit three distinct lognormal size distributions. The measured matrix elements were compared with the matrix elements calculated for spheres that had the same refractive index and fitted the same distribution of projected areas. Correlations and discrepancies between the two sets of matrix elements will be discussed.

Holland, A. C.↗

Pressure effects on the thermal stability of silicon carbide fibers

Commercially available polymer derived SiC fibers were treated at temperatures from 1000 to 2200 C in vacuum and argon gas pressure of 1 and 1360 atm. Effects of gas pressure on the thermal stability of the fibers were determined through property comparison between the pressure treated fibers and vacuum treated fibers. Investigation of the thermal stability included studies of the fiber microstructure, weight loss, grain growth, and tensile strength. The 1360 atm argon gas treatment was found to shift the onset of fiber weight loss from 1200 to above 1500 C. Grain growth and tensile strength degradation were correlated with weight loss and were thus also inhibited by high pressure treatments. Additional heat treatment in 1 atm argon of the fibers initially treated at 1360 atm argon caused further weight loss and tensile strength degradation, thus indicating that high pressure inert gas conditions would be effective only in delaying fiber strength degradation. However, if the high gas pressure could be maintained throughout composite fabrication, then the composites could be processed at higher temperatures.

Jaskowiak, Martha H.↗

Characterization of 4H <000-1> Silicon Carbide Films Grown by Solvent-Laser Heated Floating Zone

Commercially available bulk silicon carbide (SiC) has a high number (>2000/sq cm) of screw dislocations (SD) that have been linked to degradation of high-field power device electrical performance properties. Researchers at the NASA Glenn Research Center have proposed a method to mass-produce significantly higher quality bulk SiC. In order for this bulk growth method to become reality, growth of long single crystal SiC fibers must first be achieved. Therefore, a new growth method, Solvent-Laser Heated Floating Zone (Solvent-LHFZ), has been implemented. While some of the initial Solvent-LHFZ results have recently been reported, this paper focuses on further characterization of grown crystals and their growth fronts. To this end, secondary ion mass spectroscopy (SIMS) depth profiles, cross section analysis by focused ion beam (FIB) milling and mechanical polishing, and orientation and structural characterization by x-ray transmission Laue diffraction patterns and x-ray topography were used. Results paint a picture of a chaotic growth front, with Fe incorporation dependant on C concentration.

Woodworth, Andrew, A↗