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Interface states and bulk GaAs energy levels were simultaneously investigated in GaAs MOS structures prepared by anodic oxidation. These two types of energy levels were successfully distinguished by carrying out a comparative analysis of deep level transient capacitance spectra of the MOS structures and MS structures prepared on the same samples of epitaxially grown GaAs. The identification and study of the interface states and bulk levels was also performed by investigating the transient capacitance spectra as a function of the filling pulse magnitude. It was found that in the GaAs-anodic oxide interface there are states present with a discrete energy rather than with a continuous energy distribution. The value of the capture cross section of the interface states was found to be 10 to the 14th to 10 to the 15th/sq cm, which is more accurate than the extremely large values of 10 to the -8th to 10 to the -9th/sq cm reported on the basis of conductance measurements.
A new theoretical approach for calculating the equilibrium photoelectron flux energy and pitch angle distribution in the ionosphere is presented. Photoelectron transport, secondary electron production, and energy degradation by the excitation of the discrete energy states of the neutral atmospheric constituents and by continuous energy transfer to the ambient thermal electron gas are included in a manner consistent with the Boltzmann equation which constitutes the foundation of the theory. A difference equation, suitable for numerical solution, is given, and a numerical method for the solution of this equation is discussed in detail.