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A procedure for predicting the nature of impact damage development based on the measured acousto-ultrasonic (AU) response of fiber reinforced crossply laminates with or without damage is described. Results of AU evaluation as well as penetrant enhanced radiographs of damaged laminates are presented.
A new potential-induced degradation (PID) mechanism for c-Si is reported. Multiple characterization techniques in various aspects of a material's chemical, structural, electrical, and optoelectrical nature, as well as in atomic, nanometer, micrometer, millimeter, and cell and module scales, are combined. All results point consistently to a new discovery: substantial large-area deterioration of materials and junctions plays a major role.
The effects of 14-MeV neutron displacement damage (DD) on waveguide-integrated germanium-on-silicon p-i-n photodiodes (PDs) for silicon photonics have been investigated up to fluences of 7.5×1012 n/cm2 (14 MeV), or 1.4×1013 n1-MeVeq/cm2(Si). The study includes measurements of dark current-voltage characteristics across temperature from 150-375 K, measurements of PD junction capacitance, spectral response measurements from 1260 nm to 1360 nm, and frequency response measurements. The devices are found to be susceptible to DD-induced carrier removal effects; however, they also continue to operate without meaningful impact to performance for the DD dose levels examined. Since the PD test chips include silicon photonic integrated grating couplers and waveguides which carry the optical signal to the PD, some assessment of the impact of DD on these passive devices can also be inferred. Finally, this work does not examine the short-term annealing or transient behavior of the DD, and instead has only considered the lasting damage that remains after any initial period of room temperature annealing.
Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10 15 1 MeV n eq /cm 2 , while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. We present a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 10 15 1 MeV n eq /cm 2 ).
SUMMARY We present semi-analytical and numerical results on isotropic radiation expected to be generated by seismic sources with damaged dilatant materials that sustain during failure an overall shear deformation. The results are derived for inclusions with different stiffness components, including those responsible for shear-volumetric coupling in dilatant material, and different geometries, in a surrounding elastic solid. The obtained relations indicate that the isotropic seismic potency and seismic moment components are proportional to the shear potency components multiplied by the aspect ratio between the thickness and length of the source zone. For a typical rupture zone with a thin tabular geometry, the expected small aspect ratio explains the general seismological observations of small isotropic radiation. However, isotropic radiation induced by dynamic dilation for short and thick sources is more pronounced and may reach for spherical sources sustaining shear deformation 18 per cent of the shear components. Sources that include also tensile components and explosions can produce larger isotropic radiation. The results provide rigorous relations that can be used to estimate different source properties in numerical simulations, experiments and field studies.
Analysis of the genes retained in the minimized Mycoplasma JCVI-Syn3A genome established that systems that repair or preempt metabolite damage are essential to life. Several genes known to have such functions were identified and experimentally validated, including 5-formyltetrahydrofolate cycloligase, coenzyme A (CoA) disulfide reductase, and certain hydrolases. Furthermore, we discovered that an enigmatic YqeK hydrolase domain fused to NadD has a novel proofreading function in NAD synthesis and could double as a MutT-like sanitizing enzyme for the nucleotide pool. Finally, we combined metabolomics and cheminformatics approaches to extend the core metabolic map of JCVI-Syn3A to include promiscuous enzymatic reactions and spontaneous side reactions. This extension revealed that several key metabolite damage control systems remain to be identified in JCVI-Syn3A, such as that for methylglyoxal.
This work demonstrates methods of mapping high-spatial-resolution direct normal irradiance (DNI) data from satellites, Total Sky Imagers (TSIs), and analogous data sources onto a heliostat field for characterizing the spatial and temporal variation of the incident flux on a central receiver tower during cloud transient events. The mapping methods are incorporated into an optical software module that interfaces with CoPylot–SolarPILOT’s python API– to provide computationally efficient optical simulation of the heliostat field and the solar power tower. Eventually, this optical model will be incorporated into optimization models whereby a plant operator can understand the effects of cloud transient events on overall power production and receiver lifetime due to creep-fatigue damage and therefore make better informed decisions about receiver shutdown events. By more accurately modelling the effects of cloud events on receiver flux maps, this work may determine the magnitude and frequency of thermal cycling on receiver tubes and panels using actual or realistic cloud shapes instead of averaged DNI values–which may undercount the total cycle number. This work may also prevent unnecessary plant shutdowns due to overly precautionary control strategies and characterize the relative impact of various cloud types on receiver life. We plan to eventually integrate this methodology into the System Advisor Model (SAM) to improve performance model accuracy during periods of cloudiness. In this paper, we demonstrate generating DNI maps and mapping them to a solar field in CoPylot using 10 m resolution data from publicly available Sentinel-2 satellite data over the Crescent Dunes plant.
Radiation damage in silicon solar cells and annealing or compensation of damage by impurities
The effect of low speed impact damage on the compression and tension strength of thin and moderately thick composite specimens was investigated. Impact speed ranged from 50 to 550 ft./sec., with corresponding impact energies from 0.25 to 30.7 ft. x lb. Impact locations were near the center of the specimen or near a lateral unloaded edge. In this study, thin specimens with only 90 degree and + or - 45 degree plies that were impacted away from the unloaded edge suffered less reduction in load carrying capability because of impact damage than of the same specimens impacted near the unloaded edge. Failure loads of thicker compression loaded specimens with a similar stacking sequence were independent of impact location. Failure loads of thin tension loaded specimens with 0 degree plies was independent of impact location, whereas failure loads of thicker compression loaded specimens with 0 degree plies were dependent upon impact location. A finite element analysis indicated that high axial strains occurred near the unloaded edges of the postbuckled panels. Thus, impacts near the unloaded edge would significantly affect the behavior of the postbuckled panel.
An investigation of the effects of low-speed impact damage on the compression and tension strength of thin (less than .05 inches thick) and moderately thick (between .12 and .17 inches thick) composite specimens was conducted. Impact speeds ranged from 50 to 550 ft/sec (impact energies from .25 to 30.7 ft-lb) and impact locations were near or away from a lateral unloaded edge. In this study, thin tension-loaded or compression-loaded specimens with only 90 deg and +/- 40 deg plies which were impacted away from the unloaded edge suffered less reduction in maximum load-carrying capability due to impact damage than the same specimens impacted near the unloaded edge. Unlike the thin laminates, failure loads of thicker compression-loaded specimens with a similar stacking sequence were independent of impact location. Failure loads of thin tension-loaded specimens with 0 deg plies were independent of impact location while failure loads of thicker compression-loaded specimens with 0 deg plies were dependent upon impact location. A finite-element analysis of strain distributions across the panel width indicated that high axial strains occur near the unloaded edges of postbuckled panels, indicating that impacts near the unloaded edge would significantly effect the behavior of postbuckled panels.
Current methods for calculating damage to solar cells are well documented in the GaAs Solar Cell Radiation Handbook (JPL 96-9). An alternative, the displacement damage dose (D(sub d)) method, has been developed by Summers, et al. This method is currently being implemented in the SAVANT computer program.
To investigate the precise mechanism of recognition and processing of ionizing radiation (IR)-induced complex DNA damage (CDD), where two or more DNA lesions are in close proximity, in cellular DNA which is packaged with histones to form chromatin.
We present that incorporating Raman spectroscopy with transverse lift-out specimens is demonstrated to effectively characterize depth-dependent ion-irradiation damage in nuclear ceramics, such as SiC/SiC composites irradiated up to 1, 10 and 50 displacements per atom (dpa) at 350 °C using 10 MeV Au ions. Raman spectroscopy reveals irradiation-induced structural disorder saturation in both SiC-fiber and SiC-matrix at doses as low as 1 dpa, despite vastly different microstructures, inferred from similar longitudinal optical (LO) and transverse optical (TO) phonon peak shifts. Diamond (D) and graphitic (G) peaks from SiC-fibers disappear under irradiation, revealing irradiation-induced carbon packet loss. The irradiation-induced carbon packet loss is also verified by conducting TEM on same FIB foils used for Raman spectroscopy. In a previous study, the irradiation-induced SiC-fiber shrinkage is known to occur due to carbon packet loss in fibers.
The effects of visible laser light on cadmium telluride (CdTe), grown by molecular beam epitaxy, are studied at low (48 μ W/ μ m 2 ) and high (480 μ W/ μ m 2 ) laser power densities using micro-Raman spectroscopy. The Raman spectrum of CdTe shows no notable change at low power density ~48 μ W/ μ m 2 for prolonged laser exposure. At higher power density ~480 μ W/ μ m 2 , the Raman spectrum is significantly changed and strong Te-related peaks appear in the spectrum, even for short laser exposure times suggesting that photo-induced Te enrichment happens at the CdTe surface at high laser power density. The temperature rise is estimated from observed shifts in the Te and CdTe optical phonon peaks and modeled using finite-element simulations. At laser power 480 μ W/ μ m 2 , the CdTe exhibits a rise of ~44 °C above room temperature while the observed change in Te temperature is significantly higher, ~179 °C. Furthermore, the approach illustrates steps needed to establish the laser damage threshold for CdTe.
Energy dependence of electron radiation damage in silicon solar cells
Radiation induced damage to semiconductor surfaces and effect on performance
Effects of radiation-induced damage on performance of semiconductor devices - surface recombination velocity model
Radiation damage on semiconductor surfaces and effects on performance