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NASA NTRS2014

A Study on the Effects of Ball Defects on the Fatigue Life in Hybrid Bearings

Hybrid ball bearings using silicon nitride ceramic balls with steel rings are increasingly being used in space mechanism applications due to their high wear resistance and long rolling contact fatigue life. However, qualitative and quantitative reports of the effects of ball defects that cause early fatigue failure are rare. We report on our approach to study these effects. Our strategy includes characterization of defects encountered in use, generation of similar defects in a laboratory setting, execution of full-scale bearing tests to obtain lifetimes, post-test characterization, and related finite-element modeling to understand the stress concentration of these defects. We have confirmed that at least one type of defect of appropriate size can significantly reduce fatigue life. Our method can be used to evaluate other defects as they occur or are encountered.

Tang, Ching-Yao↗

NASA NTRS2018

A Screening Method Using Pulsed-Power Combined with Infrared Imaging to Detect Pattern Defects in Bulk Metal Foil or Thin Film Resistors

Bulk metal foil and thin film resistors occasionally contain localized defects within the etched resistor pattern. Common defects of this type include in-line constrictions referred to as notches, unremoved resistor material bridges between adjacent pattern lines, and embedded non-conductive particles in the resistor material. Such defects are prone to fracture due to thermomechanical fatigue during powered operation, especially power cycling, resulting in positive resistance change and open circuit failure modes. Common screening methods of optical microscopy, short time overload power tests (e.g., 6.25x rated power for 5 seconds) and burn-in (e.g., 1.5x rated power for 100 hours) are useful, but they are not always effective at removing devices with such defects. An improved method has been developed to screen for localized resistor pattern defects. The method involves the application of brief, high power electrical pulses at a low duty cycle while inspecting the resistor with a high resolution, high speed infrared camera. The following test conditions were found to be suitable for this purpose: 6.25x rated power, 1 to 5 pulses, 50 ms pulse width and 10% duty cycle. During the power pulsing, localized constrictions in the resistor pattern are identifiable as hot spots via the infrared camera. Reject criteria can be established based on observations of hot spots. To assess its effectiveness, a total of two hundred eighty (280) surface mount foil resistors (40 each from 7 different lots) were screened using this infrared technique. The screening identified twenty-nine (29) resistors with significant hot spots in the resistor pattern. All 280 resistors were then subjected to an industry standard 10,000 hour life test at 1x rated power at 70°C with power cycled for 90 minutes on and 30 minutes off. During life testing, three resistors exhibited positive resistance change failure mode. All three failures were due to thermomechanical fatigue failure of localized bridge defects at the locations identified via infrared screening. The results of this evaluation illustrate the benefits of the pulsed-power infrared detection screening technique to identify reliability suspect foil or thin film resistors that may escape common screening methods.

screening↗

NASA NTRS2018

A Screening Method Using Pulsed-Power Combined with Infrared Imaging to Detect Pattern Defects in Bulk Metal Foil or Thin Film Resistors

screening↗

NASA NTRS2018

Automated Fiber Placement Defects: Automated Inspection and Characterization

Automated Fiber Placement (AFP) is an additive composite manufacturing technique, and a pressing challenge facing this technology is defect detection and repair. Manual defect inspection is time consuming, which led to the motivation to develop a rapid automatic method of inspection. This paper suggests a new automated inspection system based on convolutional neural networks and image segmentation tasks. This creates a pixel by pixel classification of the defects of the whole part scan. This process will allow for greater defect information extraction and faster processing times over previous systems, motivating rapid part inspection and analysis. Fine shape, height, and boundary detail can be generated through our system as opposed to a more coarse resolution demonstrated in other techniques. These scans are analyzed for defects, and then each defect is stored for export, or correlated to machine parameters or part design. The network is further improved through novel optimization techniques. New training instances can also be created with every new part scan by including the machine operator as a post inspection check on the accuracy of the system. Having a continuously adapting inspection system will increase accuracy for automated inspections, cutting down on false readings.

Sacco, Christopher↗

NASA NTRS2018

Rapid Tools for an AFP Manufacturing Defects Assessment Framework

This work formulates an automated fiber placement (AFP) defects assessment framework. Such framework assumes AFP manufacturing processes are able to identify manufacturing defects via automated inspection systems and intends to provide rapid analysis tools to create a defect assessment loop. The defect assessment loop defines an automated analysis process during AFP manufacturing to minimize the number of manual repairs on the part, thus accelerating AFP manufacturing of composite structures. This defects assessment loop advantages automated inspection data to evaluate the influence of encountered AFP defects on a ply-by-ply basis. Structural evaluation is based on strength criteria using local-global finite element models. Local models affect the global part model via material property reductions. Schemes to reduce material properties using the local models are the main enablers of this framework’s automated assessment capability. Finally, we discuss the main technical challenges to realize the feasibility of this framework.

Bahamonde Jacome, Luis G.↗

NASA NTRS2021

Various Types of Defects Detection in Flat and Curved Laminated Composite Plates using Nonintrusive Lamb Wave System

Composite materials are widely used in aerospace industries due to their light weight, strength, and various other desired properties. However, they are susceptible to various defects occurring during the manufacturing process or in service. Typical defects include porosity, wrinkles, and delamination. Nondestructive means of detection of the defects at any stage are of great importance to ensure quality and safety of composite structures. A nonintrusive removeable Lamb wave system and accompanied methodology that is not material-dependent is presented in this paper to detect various types of typical defects in laminated composite plates, flat or curved. Through multidimensional data acquisition and processing, abnormality in waves caused by defects is captured and presented in inspection images. The methodologies are demonstrated in 2 cases: flat plate with wrinkles, and curved plate with delamination. Overall the results show that Lamb waves using the piezoelectric transducer and laser vibrometer system can be used for various types of defects inspection in flat or curved composite plates.

composite structures↗

NASA NTRS1974

Influence of material quality and process-induced defects on semiconductor device performance and yield

An overview of major causes of device yield degradation is presented. The relationships of device types to critical processes and typical defects are discussed, and the influence of the defect on device yield and performance is demonstrated. Various defect characterization techniques are described and applied. A correlation of device failure, defect type, and cause of defect is presented in tabular form with accompanying illustrations.

Porter, W. A.↗

NASA NTRS1976

The application of an optical Fourier spectrum analyzer on detecting defects in mass-produced satellite photographs

Various defects in mass-produced pictures transmitted to earth from a satellite are investigated. It is found that the following defects are readily detectable via Fourier spectrum analysis: (1) bit slip, (2) breakup causing loss of image, and (3) disabled track at the top of the imagery. The scratches made on the film during mass production, which are difficult to detect by visual observation, also show themselves readily in Fourier spectrum analysis. A relation is established between the number of scratches, their width and depth and the intensity of their Fourier spectra. Other defects that are found to be equally suitable for Fourier spectrum analysis or visual (image analysis) detection are synchronous loss without blurring of image, and density variation in gray scale. However, the Fourier spectrum analysis is found to be unsuitable for detection of such defects as pin holes, annotation error, synchronous loss with blurring of images, and missing image in the beginning of the work order. The design of an automated, real time system, which will reject defective films, is treated.

Athale, R.↗

NASA NTRS1977

The effect of oxidation-expanded defects upon MOS parameters

Implantation of Ne ions was chosen as a means of introducing a uniformly distributed quantitatively controllable and reproducible amount of microdefects at the silicon surface. Each wafer was ion-implanted on one half of its surface, the other half remaining as a control. Seven implant fluences from 1 trillion to 5 by 10 to the 14th power Ne ions/sq cm were used. The fluences, as well as the concentrations of defects expanded by the subsequent gate oxidation, were correlated with seven different MOS parameters. For implant fluences of 10 to the 14th power per sq cm and above, increasing stacking-fault densities were found. The oxide defect density associated with time-dependent breakdown increased significantly with Ne dose. The presence of oxidation-expanded defects drastically increases the surface-generation velocity and decreases the bulk lifetime. Slight increases in flatband voltage and surface-state density occurred only for the wafers having the greatest defect concentrations. Oxidation of a P-containing damaged silicon surface results in a greater pileup of P at the surface than occurs for the oxidation of a similar but undamaged surface. It appears that the expanding defects restrain the diffusion of P inward from the surface.

Prussin, S.↗

NASA NTRS1979

Characterization of defect growth structure in ion plated films by scanning electron microscopy

Copper and gold films (0.2 to 2 microns) were ion plated onto polished 304-stainless-steel surfaces. These coatings were examined by scanning electron microscopy for coating growth defects. Three types of defects were distinguished: nodular growth, abnormal or runaway growth, and spits. The cause and origin for each type of defect was traced. Nodular growth is primarily due to inherent substrate microdefects, abnormal or runaway growth is due to external surface inclusions, and spits are due to nonuniform evaporation. All these defects have adverse effects on the coatings. They induce stresses and produce porosity in the coatings and thus weaken their mechanical properties. Friction and wear characteristics are affected by coating defects, since the large nodules are pulled out and additional wear debris is generated.

Spalvins, T.↗

NASA NTRS1979

Definition of mutually optimum NDI and proof test criteria for 2219 aluminum pressure vessels. Volume 3: Applications to rail defect evaluation

The technique for inspection of railroad rails containing transverse fissure defects was discussed. Both pulse-echo and pitch-catch inspection techniques were used. The pulse-echo technique results suggest that a multiple-scan approach using varying angles of inclination, three-surface scanning, and dual-direction traversing may offer promise of characterization of transverse defects. Because each scan is likely to produce a reflection indicating only a portion of the defect, summing of the individual reflections must be used to obtain a reasonably complete characterization of the defect. The ability of the collimated pitch-catch technique to detect relatively small amounts of flaw growth was shown. The method has a problem in characterizing the portions of the defect near the top surface or web intersection. The work performed was a preliminary evaluation of the prospects for automated mapping of rail flaws.

Schwartzberg, F. R.↗

NASA NTRS1979

Characterization of defect growth structures in ion plated films by scanning electron microscopy

Gold and copper films (0.2-2 micron thick) are ion plated on very smooth stainless steel 304 and mica surfaces. The deposited films are examined by SEM to identify the morphological growth of defects. Three types of coating defects are distinguished: nodular growth, abnormal or runaway growth, and spits. The potential nucleation sites for defect growth are analyzed to determine the cause of defect formation. It is found that nuclear growth is due to inherent surface microdefects, abnormal or runaway growth is due to external surface inclusions, and spits are due to nonuniform evaporation and ejection of droplets. All these defects have adverse effects on the coatings.

Spalvins, T.↗

NASA NTRS1981

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗

NASA NTRS1981

Flaw criticality of circular disbond defects in compressive laminates

The compressive behavior of T300/5208 graphite-epoxy laminates containing circular delaminations was studied to determine the flaw criticality of two types of implanted defect, Kapton bag and Teflon film, on several laminate configurations. Defect size was varied. Results, presented in the form of residual strength curves, indicate that the Teflon film defect reduced strength more than the Kapton bad defect in 12-ply samples, but that two laminates (+ or - 45) sub 2s and (90/+ or - 45) sub s were insensitive to any implanted defect. A clear thickness effect was shown to exist for the (o/+ pr 45) sub ns laminate and was attributed to failure mode transition. The analytically predicted buckling loads show excellent agreement with experimental results and are useful in predicting failure mode transition.

Webster, J. D.↗

NASA NTRS1980

Estimation of uncertainty in isotherms deduced from Hugoniots resulting from shockwave generated defects

The problem of how defect concentrations produced in a shock experiment affect the isothermal equation of state is considered. From the few experimental results available that bear directly on this question, it appears the effect could be substantial, i.e., the pressure in material free of defects may be 10-25% lower at a given volume than the isothermal pressure deduced from Hugoniot data on the assumption that defects are negligible in the shocked material. This correction caused by the presence of defects is called the defect pressure.

Ruoff, A. L.↗

NASA NTRS1982

Defect chemistry and characterization of Hg sub 1x Cd sub x Te

Single crystal samples of undoped and doped Hg sub 1-x Cd sub x Te were annealed at varying temperatures and partial pressures of Hg. Hall effect and mobility measurements were carried out on these samples after quenching to room temperature. Based on the variation of the carrier concentration and the carrier mobility as a function of the partial pressure of Hg temperature, and dopant concentration, defect models were established for the doped and the undoped crystals. These models indicate that the native acceptor defects in both Hg0.8Cd0.2Te and Hg0.6Cd0.4Te doubly ionized and the native donor defects are negligible in concentration, implying that p to n conversion in these alloys occurs due only to residual donors. Incorporation mechanism of copper, indium, iodine, and phosphorus were investigated. A large concentration of indium is found to be paired with the native acceptor defects. Results on crystals doped with phosphorus indicate that phosphorus behaves amphoterically, acting as a donor on Hg lattice sites and as an acceptor intersitially on Te lattice sites. A majority of the phosphorus is found to be present as neutral species formed from the pairing reaction between phosphorus on Hg lattice sites and phosphorus in interstitial sites. Equilibrium constants for the intrinsic excitation reaction, as well as for the incorporation of the different dopants and the native acceptor defects were established.

Vydyanath, H. R.↗

NASA NTRS1981

Study of radiation induced deep-level defects and annealing effects in the proton irradiated AlGaAs-GaAs solar cells

The radiation induced deep-level defects and the recombination parameters in the proton irradiated AlGaAs-GaAs p-n junction solar cells were investigated over a wide range of proton energies (from 50 KeV to 10 MeV) and proton fluences (from 10 to the 10th to 10 to the 13th P/sq cm), using DLTS, I-V, C-V, and SEM-EMIC measurement techniques. The measurements were used to determine the defect and recombination parameters such as defect density and energy level, carrier lifetimes, and the hole diffusion lengths in the GaAs LPE layers. Results show that a good correlation was obtained between the measured defect parameters and the dark recombination current as well as the performance parameters of the solar cells. The most damages to the cell were produced by the 200 KeV protons. In addition, the effects of low temperatures (200 to 400 C) thermal annealing on the deep-level defects and the dark current of the 200 KeV proton irradiated samples were examined.

Li, S. S.↗

NASA NTRS1982

Reduction of solar cell efficiency by edge defects across the back-surface-field junction - A developed perimeter model

Material imperfections, impurity clusters and fabrication defects across the back-surface-field junction can degrade the performance of high-efficiency solar cells. The degradation from defects appearing on the circumference of a solar cell is analyzed using a two-region developed perimeter device model. The width of the defective perimeter region is characterized by the range or the distance-of-influence of the defective edge and this width is about two diffusion lengths. The defective edge is characterized by a surface recombination velocity. Family of theoretical curves and numerical examples are presented to show that significant reduction of open-circuit voltage can occur in high-efficiency cells which are thin compared with the diffusion length. In one example, the degradation is decreased from 135 mV to 75 mV when the cell size is increased from 10 to 100 times the diffusion length in a thin cell whose thickness is 1% of the diffusion length.

Sah, C. T.↗