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At least 55 records · Page 3

Ferromagnetism with in-plane magnetization, Dirac spin-gapless semiconducting properties, and tunable topological states in two-dimensional rare-earth metal dinitrides

Since the successful synthesis of bulk single crystals MoN 2 and ReN 2 , which have a layered structure, transition-metal dinitrides have attracted considerable attention in recent years. Here, we focus on rare-earth metal (Rem) elements, and propose seven stable Rem dinitride monolayers with a 1T structure, namely, 1T-RemN 2 . We use first-principles calculations, and find that these monolayers have a ferromagnetic ground state with in-plane magnetization. Without spin-orbit coupling (SOC), the band structures are spin-polarized with Dirac points at the Fermi level. Remarkably, the 1T-LuN 2 monolayer exhibits an isotropic magnetocrystalline anisotropy energy in the xy plane with in-plane magnetization, indicating easy tunability of the magnetization direction. Additionally, when rotating the magnetization vector in the xy plane, we propose a model that accurately describes the variation of the SOC band gap and the two possible topological states (Weyl-like semimetal and Chern insulator states) whose properties are tunable. The Weyl-like semimetal state is a critical point between the two Chern insulator states with opposite sign of the Chern numbers (±1). The nontrivial band gap (up to 60.3 meV) and the Weyl-like semimetal state are promising for applications in spintronic devices.

2-dimensional systems↗

Metal-to-insulator transition in oxide semimetals by anion doping

Dirac semimetals exhibiting nontrivial topological characteristics stand as exemplary parent compounds, offering great promise for the realization of novel electronic states. These materials also serve as a versatile platform for systematically investigating topological quantum phase transitions. In this study, we present compelling evidence of profound structural and transport phase shifts in a recently uncovered oxide Dirac semimetal, SrNbO3, achieved through effective in situ anion doping. Notably, a remarkable increase in resistivity of more than three orders of magnitude at room temperature is observed upon nitrogen-doping. The extent of electronic modulation in SrNbO3 is strongly correlated with the misfit strain, underscoring its phase instability to both chemical doping and crystallographic symmetry variations. Using first-principles calculations, we discern that elevating the level of nitrogen doping induces an upward shift in the conductive bands of SrNbO3-?N?. Consequently, a transition from a metallic state to an insulating state becomes apparent as the nitrogen concentration reaches a threshold of 1/3. This investigation sheds light on the potential of anion engineering in oxide Dirac semimetals, offering pathways for manipulating their physical properties. These insights hold promise for future applications that harness these materials for tailored functionalities.

Hong, Haitao↗

Spin-valley locking and bulk quantum Hall effect in a noncentrosymmetric Dirac semimetal BaMnSb 2

Spin-valley locking in monolayer transition metal dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a Dirac semimetal BaMnSb 2 . This is revealed by comprehensive studies using first principles calculations, tight-binding and effective model analyses, angle-resolved photoemission spectroscopy measurements. Moreover, this material also exhibits a stacked quantum Hall effect (QHE). The spin-valley degeneracy extracted from the QHE is close to 2. This result, together with the Landau level spin splitting, further confirms the spin-valley locking picture. In the extreme quantum limit, we also observed a plateau in the z-axis resistance, suggestive of a two-dimensional chiral surface state present in the quantum Hall state. These findings establish BaMnSb 2 as a rare platform for exploring coupled spin and valley physics in bulk single crystals and accessing 3D interacting topological states.

36 MATERIALS SCIENCE↗

High-Pressure Synthesis of Dirac Materials: Layered van der Waals Bonded BeN 4 Polymorph

High-pressure chemistry is known to inspire the creation of unexpected new classes of compounds with exceptional properties. In this paper, we employ the laser-heated diamond anvil cell technique for synthesis of a Dirac material BeN 4 . A triclinic phase of beryllium tetranitride tr-BeN 4 was synthesized from elements at similar to 85 GPa. Upon decompression to ambient conditions, it transforms into a compound with atomic-thick BeN 4 layers interconnected via weak van der Waals bonds and consisting of polyacetylene-like nitrogen chains with conjugated pi systems and Be atoms in square-planar coordination. Theoretical calculations for a single BeN 4 layer show that its electronic lattice is described by a slightly distorted honeycomb structure reminiscent of the graphene lattice and the presence of Dirac points in the electronic band structure at the Fermi level. The BeN 4 layer, i.e., beryllonitrene, represents a qualitatively new class of 2D materials that can be built of a metal atom and polymeric nitrogen chains and host anisotropic Dirac fermions.

36 MATERIALS SCIENCE↗

Design of biphenylene-derived tunable dirac materials

The exploration of carbon allotropes has unveiled a series of two-dimensional (2D) materials with unique electronic and mechanical properties, yet the need for stable structures with tailored electronic properties persists. Here, in this study, we introduce a new class of 2D carbon allotropes derived from the biphenylene network (BPN), incorporating acetylenic linkages to tune their structural and electronic characteristics. Through density functional theory calculations, we identified ten novel BPN-derived structures that exhibit both energetic and dynamic stability, confirmed by cohesive energy and phonon spectrum analyses. Among them, BPN-02 and BPN04 are metallic, featuring critically-tilted type-III Dirac cones under ~ 5 % biaxial strain, while BPN-22 is a semiconductor with a band gap of 0.95 eV and exhibits highly anisotropic carrier mobility. Additionally, these structures demonstrate significant anisotropy in their elastic properties, further distinguishing them from other 2D carbon materials like graphene. Our findings suggest that these novel BPN-based structures have strong potential for next-generation electronic and optoelectronic applications, providing new avenues for the design and synthesis of advanced carbon materials.

2D carbon allotropes↗

Origin of anomalous magnetotransport in kagome superconductors 𝐴⁢V 3 ⁢Sb 5 (𝐴 = K,Rb,Cs)

Multiple anomalous features in electronic spectra of metals with a kagome lattice structure—van Hove singularities, Dirac points, and flat bands—imply that materials containing this structural motif may lie at a nexus of topological and correlated electron physics. Due to the prospects of such exceptional electronic behavior, the recent discovery of superconductivity coexisting with charge-density wave (CDW) order in the layered kagome metals 𝐴⁢V 3 ⁢Sb 5 (𝐴 = K,Rb,Cs) has attracted considerable attention. Notably, these archetypal kagome metals express unconventional magnetotransport behavior, including an unexpected linear-in-𝐻 diagonal resistivity at low fields, and an even more peculiar, nonmonotonic sign-changing behavior of the Hall resistivity, which has been speculated to arise from a chiral CDW. We argue here that this unusual magnetotransport derives not from such unconventional phenomena, but rather from the unique fermiology of the 𝐴⁢V 3 ⁢Sb 5 materials. Specifically, it is caused by a large, concave hexagonal Fermi surface sheet formed in the close proximity to the van Hove singularities, which is backfolded into a small hexagonal sheet and two large triangular sheets in the CDW state. We introduce and analyze a model of the electronic structure of these Fermi surface sheets that allows for a full analytical treatment within Boltzmann kinetic theory and that enables semi-quantitative fits of our transport data. Specifically, we find that the anomalous magnetotransport behavior is caused by the confluence of strong reduction of the Fermi velocity near the van Hove singularities located near the vertices of the hexagonal sheet and sharp corners in Fermi surface generated by the CDW reconstruction. In conclusion, our analytical approach not only explains the anomalous magnetotransport in the kagome superconductors but also can be extended to a variety of metallic systems hosting singular features in their Fermi surfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

High-field magnetic phase diagrams of the 𝑅⁢Mn 6 ⁢Sn 6 (𝑅=Gd–Tm) kagome metals

𝑅⁢Mn 6 ⁢Sn 6 (𝑅=Y, Gd–Lu) kagome metals are promising materials hosting flat electronic bands and Dirac points that interact with magnetism. The coupling between the two magnetic 𝑅 and Mn sublattices can drive complex magnetic states with potential consequences for spin and charge transport and other topological properties. Here, in this work, we use a detailed magnetic Hamiltonian to calculate and predict the magnetic phase diagrams for 𝑅⁢Mn 6 ⁢Sn 6 kagome metals within the mean-field approximation. These calculations reveal a variety of collinear, noncollinear, and noncoplanar phases that arise from competition between various interlayer magnetic exchange interactions and magnetic anisotropies of the 𝑅 and Mn ions. We enumerate these phases and their magnetic space groups for future analysis of their impact on topological and trivial bands near the Fermi surface.

kagome metal↗

A comprehensive ARPES study on the type-II Dirac semimetal candidate Ir 1-x Pt x Te 2

The transition metal dichalcogenide Ir 1-x Pt x Te 2 displays both superconductivity and a topological band structure. Using angle-resolved photoemission spectroscopy, we obtain a comprehensive understanding of the three-dimensional electronic structure in the normal state of Ir 1-x Pt x Te 2 for doping levels from x = 0.1 to 0.4, which spans the composition range of a superconducting state to a non-superconducting state. Many features of the electronic structure can be attributed to strong Te–Te interactions between the layers of the layered crystal structure and can be resolved by photon energy dependent measurements. We demonstrate that the type-II Dirac fermions can be successfully tuned via Pt doping, where the Dirac point lies close to the Fermi level for x = 0.1. The band evolution vs doping provides a clearer understanding of the relationship between the superconductivity and electronic structure. In addition, the β band in the superconducting samples locates the system close to a type-II van Hove singularity, where spin triplet paring symmetry has been predicted. Our results provide a comprehensive understanding of the band structure of Ir 1-x Pt x Te 2 , and we discuss the possibilities of the existence of topological superconductivity in this system.

36 MATERIALS SCIENCE↗

The Subchalcogenides Ir 2 In 8 Q (Q = S, Se, Te): Dirac Semimetal Candidates with Re-entrant Structural Modulation

Subchalcogenides are uncommon compounds where the metal atoms are in unusually low formal oxidation states. They bridge the gap between intermetallics and semiconductors and can have unexpected structures and properties because of the exotic nature of their chemical bonding as they contain both metal–metal and metal–main group (e.g., halide, chalcogenide) interactions. Finding new members of this class of materials presents synthetic challenges as attempts to make them often result in phase separation into binary compounds. We overcome this difficulty by utilizing indium as a metal flux to synthesize large (millimeter scale) single crystals of novel subchalcogenide materials. Herein, we report two new compounds Ir 2 In 8 Q (Q = Se, Te) and compare their structural and electrical properties to the previously reported Ir 2 In 8 S analogue. Ir 2 In 8 Se and Ir 2 In 8 Te crystallize in the $P_{4_2}$/mnm space group and are isostructural to Ir2In8S, but also have commensurately modulated (with q vectors q = 1/6a* + 1/6b* and q = 1/10a* + 1/10b* for Ir 2 In 8 Se and Ir 2 In 8 Te, respectively) low-temperature phase transitions, where the chalcogenide anions in the channels experience a distortion in the form of In–Q bond alternation along the ab plane. Both compounds display re-entrant structural behavior, where the supercells appear on cooling but revert to the original subcell below 100 K, suggesting competing structural and electronic interactions dictate the overall structure. Notably, these materials are topological semimetal candidates with symmetry-protected Dirac crossings near the Fermi level and exhibit high electron mobilities (~1500 cm 2 V –1 s –1 at 1.8 K) and moderate carrier concentrations (~10 20 cm –3 ) from charge transport measurements. This work highlights metal flux as a synthetic route to high quality single crystals of novel intermetallic subchalcogenides with Dirac semimetal behavior.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

CrRhAs: a member of a large family of metallic kagome antiferromagnets

Abstract Kagome lattice materials are an important platform for highly frustrated magnetism as well as for a plethora of phenomena resulting from flat bands, Dirac cones and van Hove singularities in their electronic structures. We study the little known metallic magnet CrRhAs, which belongs to a vast family of materials that includes 3 d , 4 f , and 5 f magnetic elements, as well as numerous nonmagnetic metals and insulators. Using noncollinear spin density functional calculations (mostly spin spirals), we extract a model magnetic Hamiltonian for CrRhAs. While it is dominated by an antiferromagnetic second nearest neighbor coupling in the kagome plane, the metallic nature of the compound leads to numerous nonzero longer range couplings and to important ring exchange terms. We analyze this Hamiltonian and find unusual ground states which are dominated by nearly isolated antiferromagnetic triangles that adopt 120 ∘ order either with positive or with negative vector chirality. We discuss the connection to the few known experimental facts about CrRhAs. Finally, we give a brief survey of other interesting magnetic members of this family of kagome compounds.

36 MATERIALS SCIENCE↗

Quantum Nonlinear Acoustic Hall Effect and Inverse Acoustic Faraday Effect in Dirac Insulators

Here, we propose to realize the quantum nonlinear Hall effect and the inverse Faraday effect through the acoustic wave in a time-reversal invariant but inversion broken Dirac insulator. We focus on the acoustic frequency much lower than the Dirac gap such that the interband transition is suppressed and these effects arise solely from the intrinsic valley-contrasting band topology. The corresponding acoustoelectric conductivity and magnetoacoustic susceptibility are both proportional to the quantized valley Chern number and independent of the quasiparticle lifetime. The linear and nonlinear components of the longitudinal and transverse topological currents can be tuned by adjusting the polarization and propagation directions of the surface acoustic wave. The static magnetization generated by a circularly polarized acoustic wave scales linearly with the acoustic frequency as well as the strain-induced charge density. Our results unveil a quantized nonlinear topological acoustoelectric response of gapped Dirac materials, like hexagonal boron nitride and transition-metal dichalcogenide, paving the way toward room-temperature acoustoelectric devices due to their large band gaps.

36 MATERIALS SCIENCE↗

Twisted symmetric trilayer graphene. II. Projected Hartree-Fock study

The Hamiltonian of the magic-angle twisted symmetric trilayer graphene (TSTG) can be decomposed into a twisted-bilayer-graphene- (TBG-) like flat band Hamiltonian and a high-velocity Dirac fermion Hamiltonian. We use Hartree-Fock mean field approach to study the projected Coulomb interacting Hamiltonian of TSTG developed in Calugaru et al. [Phys. Rev. B 103, 195411 (2021)] at integer fillings ν = -3, -2, -1, and 0 measured from charge neutrality. We study the phase diagram with w 0 /w 1 , the ratio of AA and AB interlayer hoppings, and the displacement field, which introduces an interlayer potential U and hybridizes the TBG-like bands with the Dirac bands. At small U, we find the ground states at all fillings ν are in the same phases as the tensor products of a Dirac semimetal with the filling ν TBG insulator ground states, which are spin-valley polarized at ν = -3, and fully (partially) intervalley coherent at ν = -2, 0(ν = -1) in the flat bands. An exception is ν = -3 with w 0 /w 1 ≳ 0.7 , which possibly becomes a metal with competing orders at small U due to charge transfers between the Dirac and flat bands. At strong U where the bandwidths exceed interactions, all the fillings ν enter a metal phase with small or zero valley polarization and intervalley coherence. Lastly, at intermediate U, semimetal or insulator phases with zero intervalley coherence may arise for ν = -2, -1, 0. Finally, our results provide a simple picture for the electron interactions in TSTG systems, and reveal the connection between the TSTG and TBG ground states.

2-dimensional systems↗

High-Pressure Electrides: A Quantum Chemical Perspective

It has long been assumed that all matter will adopt simple close-packed lattices and become metallic under pressure, in accordance with the Thomas–Fermi–Dirac (TFD) model. However, this model struggles to explain pressure-driven complex structural transitions that have been observed in elements, including sodium, challenging our conventional understanding of compressed matter. Moreover, in stark contrast to the TFD model, first-principles calculations suggest that various elements and compounds become electrides under pressure. Electrides, characterized by concentrations of charge density at interstitial regions, can be thought of as ionic compounds where electrons behave as the anions. Though ambient-pressure molecular electrides have been extensively studied via experiments and computations, high-pressure electrides (HPEs) are not well-understood. The identification and characterization of HPEs have been, to date, based purely on theory, including topological analysis of the electron density and the electron localization function. Here, we review these theoretical analysis tools and suggest guidelines that can be used to classify systems as electrides. Moreover, we describe models used to rationalize the electronic structure of HPEs, drawing parallels with ambient-pressure molecular systems, and encourage the development of experimental techniques that provide evidence for the theoretically calculated charge localization.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Multiple Dirac nodes and symmetry protected Dirac nodal line in orthorhombic α-RhSi

Exotic multifold topological excitations have been predicted and were recently observed in transition metal silicides like β-RhSi. Herein, we report that interesting topological features of RhSi are also observed in its orthorhombic α phase, which displays multiple types of Dirac nodes very close to the Fermi level ε F . Here, we discuss the symmetry analysis, band connectivity along high-symmetry lines using group representations, band structure, the nature of the Dirac points and of a nodal line occurring near ε F which is protected by the crystalline symmetry. The de Haas–van Alphen effect indicates a Fermi surface in agreement with the calculations. We find an elliptically shaped nodal line very close to ε F around and near the S point on the k y -k z plane that results from the intersection of two upside-down Dirac cones. Both Dirac points of the participating Kramers degenerate bands are only 5 meV apart; hence, an accessible magnetic field might induce a crossing between the spin-up partner of the upper Dirac cone and the spin-down partner of the lower Dirac cone, possibly explaining the anomalies observed in the magnetic torque. α-RhSi is a unique system since all bands crossing ε F emerge from Dirac nodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantum oscillations with angular dependence in PdTe 2 single crystals

The layered transition-metal dichalcogenide PdTe 2 has been discovered to possess bulk Dirac points as well as topological surface states. By measuring the magnetization (up to 7 T) and magnetic torque (up to 35 T) in single crystalline PdTe2, we observe distinct de Haas–van Alphen (dHvA) oscillations. Eight frequencies are identified with H||c, with two low frequencies (F α = 8 T and F β = 117 T) dominating the spectrum. The effective masses obtained by fitting the Lifshitz–Kosevich (LK) equation to the data are $m_α^* =0.059m_0$ and $m_β^* =0.067m_0$ where $m_0$ is the free electron mass. The corresponding Landau fan diagrams allow the determination of the Berry phase for these oscillations resulting in values of ~0.67π for the 3D α band (hole-type) (down to the 1st Landau level) and ~0.23π–0.73π for the 3D β band (electron-type) (down to the 3rd Landau level). By investigating the angular dependence of the dHvA oscillations, we find that the frequencies and the corresponding Berry phase (Φ B ) vary with the field direction, with a Φ B ~ 0 when H is 10°–30° away from the ab plane for both α and β bands. Finally, the multiple band nature of PdTe 2 is further confirmed from Hall effect measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Signatures of coupling between spin waves and Dirac fermions in YbMnBi 2

Here, we present inelastic neutron scattering measurements of magnetic excitations in YbMnBi 2 , which reveal features consistent with a direct coupling of magnetic excitations to Dirac fermions. In contrast with the large broadening of magnetic spectra observed in antiferromagnetic metals such as the iron pnictides, here the spin waves exhibit a small but resolvable intrinsic width, consistent with our theoretical analysis. The subtle manifestation of spin-fermion coupling is a consequence of the Dirac nature of the conduction electrons, including the vanishing density of states near the Dirac points. Accounting for the Dirac fermion dispersion specific to YbMnBi 2 leads to particular signatures, such as the nearly wave-vector-independent damping observed in the experiment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Topological Hall Effect Anisotropy in Kagome Bilayer Metal Fe 3 Sn 2

Kagome lattice materials attract growing interest for their topological properties and flat-bands in electronic structure. We present comprehensive study on the anisotropy and out-of-plane electric transport in Fe 3 Sn 2 , a metal with bilayer of Fe kagome planes and with massive Dirac fermions that features high-temperature non-collinear magnetic structure and magnetic skyrmions. For the electrical current path along the c-axis, in micron-size crystals, we found a large topological Hall effect (THE) over a wide temperature range down to spin-glass state. Twofold and fourfold angular magnetoresistance are observed for different magnetic phases, reflecting the competition of magnetic interactions and magnetic anisotropy in kagome lattice that preserve robust topological Hall effect for inter kagomebilayer currents. This information provides new insight into the anisotropy in Fe 3 Sn 2 , of interest in skyrmionicbubble application-related micron-size devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗