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At least 55 records · Page 3

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Reliability of Open Public Electric Vehicle Direct Current Fast Chargers

The aim was to systematically evaluate the usability of all public electric vehicles (EV) direct current fast chargers (DCFC) in the San Francisco region. To achieve a rapid transition to EVs, a highly reliable and easy to use charging infrastructure is critical to building confidence among consumers. The functionality and usability of all 182 open, public DCFC charging stations with CCS connectors (combined charging system) in the 9 counties of the Bay Area were tested (655 electric vehicle service equipment (EVSE) ports). An EVSE was classified as functional if it charged an EV for 2 minutes. Overall, 73.3% of the 655 EVSEs were functional. The causes of the nonfunctioning EVSEs (23.5%) were blank or unresponsive screens or error messages; payment system failures; charge initiation failures; network failures; or broken connectors. In addition, the cable was too short to reach the EV inlet for 3.2% of the EVSEs. A random sampling of 10% of the EVSEs, approximately 8 days after the first evaluation, found no overall change in functionality. The level of functionality found with field testing conflicts with the 95–98% uptime reported by the EV service providers (EVSPs) who operate the EV charging stations. There is a need for precise and verifiable definitions of uptime, downtime, and excluded time, as applied to public EV chargers. In conclusion, the level of failure of the existing public EV DCFC charge infrastructure highlights the importance of improving the system design and maintenance to improve adoption of EVs.

33 ADVANCED PROPULSION SYSTEMS↗

Electricity rates for electric vehicle direct current fast charging in the United States

While several efforts are promoting a widespread and convenient network of direct current fast charging (DCFC) stations to support electric vehicles, there is limited understanding of the magnitude and variability of the cost of electricity for these applications. This information gap may hinder optimal investing and planning for charging station placement and in turn affect electric vehicle adoption and usage. Here, we assess the electricity cost for different scenarios of DCFC station size and use based on over 7500 commercial and industrial electricity rates available for 2017 across the United States. Results show that the cost of electricity for DCFC varies dramatically, ranging from less than 0.10 cents to over 2 dollars per kilowatt-hour, depending on station design and high uncertainty in use. The main driver of cost is low utilization, which results from a combination of few charging events and limited energy recharged during each event. Low utilization leads to significantly higher electricity cost, particularly for rates with demand charges; however, cost decreases rapidly as utilization increases. For high-utilization stations, selecting rates with demand charges can actually reduce electricity costs compared to non-demand-charge rates. Furthermore, significant opportunities for cost savings based on existing rates include preferential charging during off-peak hours and limiting multi-plug station power so that not all plugs can be used simultaneously at maximum power.

33 ADVANCED PROPULSION SYSTEMS↗

Negative Medium-Voltage Direct Current Discharges in Air under Simulated Sub-Atmospheric Pressures for All-Electric Aircraft

The increase in the global temperature due to greenhouse gas emissions is a major concern to the world. To achieve the goal of zero emissions by 2050 in the USA the practical realization of all-electric vehicles, particularly all-electric aircraft (AEA), is important. For the design of electrical power systems (EPSs) in all-electric aircraft, a bipolar medium-voltage direct current (MVDC) system of ±5 kV is being investigated. However, several challenges manifest when using such voltages in a low-pressure environment. One of the main challenges is the partial discharge (PD) behavior of the insulation. It is important to study the PD behavior of the insulation by simulating the aviation environment in the lab. This work aimed to study the partial discharge behavior of air under a negative DC voltage in a needle-to-plane electrode geometry by simulating the aviation pressures in the lab. The partial discharge inception voltage (PDIV) and the breakdown voltage (BDV) show an obvious pressure-dependent variation. Regression analysis was performed to better understand the relationship between the PDIV and pressures. Plots were drawn for the average discharge current at each voltage step until breakdown. This paper’s findings can provide valuable insight into the design of EPS for an AEA. To the best of our knowledge, such a study has not been carried out to date.

air discharge↗

Ion-beam-spurted dimethyl-sulfate-doped PEDOT:PSS composite-layer-aligning liquid crystal with low residual direct-current voltage

Thin ion-beam (IB)-spurted dimethyl sulfate/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (DMS/PEDOT:PSS) layers with improved electro-optic performance are presented for aligning liquid crystals. IB spurting is effective for enhancing the conductivity of such layers, as well as the anchoring energy of the liquid crystals sandwiched between them. Compared with a commercial twisted-nematic cell assembled with polyimide alignment layers, the same cell assembled with 3.0-keV IB-spurted DMS/PEDOT:PSS alignment layers shows a 38% faster switching and a 93% lower residual direct current. The improved electro-optic performance here is likely due to the enhanced electric field effect and the charge-releasing ability of thin IB-spurted DMS/PEDOT:PSS layers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Direct Current Arc-Flash Hazards of Solar Photovoltaic Systems

An arc-flash is a rapid release of thermal energy, pressure waves, and electromagnetic interference from a high-power electrical system, caused by such events as unintentional shorting or equipment malfunction. Arc-flashes are hazardous to people and equipment. Incident energy (IE) is a means of quantifying the degree of thermal hazard posed by an arc-flash event. The calculated IE value dictates what level of personal protective equipment (PPE) workers are required to wear when servicing equipment. Overly burdensome PPE may increase a worker’s discomfort and decrease dexterity, which could lead to unintentional shorting, while inadequate PPE also comes with increased safety risks. The majority of arc-flash research to date has focused on alternating current (ac) systems. For example, IE calculations and PPE for ac systems are relatively well understood and have been applied across many equipment types and voltages. IE calculation methodologies in ac systems are backed by a wide range of industry tests and are included in Institute of Electrical and Electronics Engineers (IEEE) and National Fire Protection Association (NFPA) standards. However, very little is known about direct current (dc) arc-flash and its hazards. This is a significant knowledge gap, as an increasing number of dc systems are being deployed: solar photovoltaic (PV) plants, battery storage, and electric vehicles and their charging infrastructure. The dc arc-flash hazard publications are rooted primarily in theory, and their IE calculation methods contradict each other. Insufficient knowledge and data are preventing the formation of industry consensus and standards around dc arc-flash hazard assessment. Here, this white paper highlights the current status and research opportunities for assessing arc-flash hazards in dc systems, with a focus on PV plants. The nonlinear current-voltage characteristics of PV modules make them unique in comparison to other linear dc sources, such as batteries. Also, PV equipment has rapidly evolved from 600 Vdc to 1,500 Vdc (in the United States), increasing potential arc-flash hazards. The operating regime of a PV-array within its I-V characteristic curve during an arc-flash event and the sustainability of arc-flash events in a utility-scale PV plant need to be investigated. Arc-flash experiments on a 1-MWdc nameplate capacity utility-owned ground-mount photovoltaic plant suggest that the PV array acts as a constant-current supply with currents near the short-circuit portion of the I-V characteristic curve of the array, with median arc voltage as 1/3 of the rated voltage. Various engineering software packages (CYME7 by EATON, PTW by SKM, ArcFlash™ by EasyPower, ETAP, and so on) have started offering dc arc-flash calculation features to estimate the risk of arc-flash in dc and PV systems. However, they are reliant on the same simplified arc-flash models, which contradict each other due to differences in assumptions such as characteristics of the power source, arc current, voltage and impedance, arc-operating regime, and so on. Physical arc-flash testing and improved physics-based modeling with correct assumptions representing practical scenarios are two methods to improve understanding and quantify the risks associated with dc arc-flash hazards. The results would inform development of a more accurate calculation procedure for IE and proper PPE levels.

14 SOLAR ENERGY↗

Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant increase in film hardness and reduced elastic modulus with increasing V{sub s} for all techniques. The harder films were produced by MFMS with hardness as high as 25 GPa. Low friction coefficients, between 0.05 and 0.06, were recorded for all films. Furthermore, CN{sub x} films produced by MFMS and DCMS at V{sub s} = 100 and 120 V presented a high wear resistance with wear coefficients of k ≤ 2.3 × 10{sup −5} mm{sup 3}/Nm. While all CN{sub x} films exhibit low friction, wear depends strongly on the structural and mechanical characteristics of the films. The MFMS mode is best suited for the production of hard CN{sub x} films, although high compressive stresses challenge the application on steel substrates. Films grown in HiPIMS mode provide adequate adhesion due to low residual stress values, at the expense of lower film hardness. Thus, a relatively wide mechanical property envelope is presented for CN{sub x} films, which is relevant for the optimization of CN{sub x} film properties intended to be applied as low friction and wear resistant coatings.

36 MATERIALS SCIENCE↗

Transcranial Direct Current Stimulation (tDCS) Improves Empathy and Recognition of Facial Emotions Conveying Threat in Adults with Autism Spectrum Disorder (ASD): A Randomized Controlled Pilot Study

Introduction: Empathy is critical for human interactions to become shared and meaningful, and it is facilitated by the expression and processing of facial emotions. Deficits in empathy and facial emotion recognition are associated with individuals with autism spectrum disorder (ASD), with specific concerns over inaccurate recognition of facial emotion expressions conveying a threat. Yet, the number of evidenced interventions for facial emotion recognition and processing (FERP), emotion, and empathy remains limited, particularly for adults with ASD. Transcranial direct current stimulation (tDCS), a noninvasive brain stimulation, may be a promising treatment modality to safely accelerate and/or enhance treatment interventions to increase their efficacy. Methods: This study investigates the effectiveness of FERP, emotion, and empathy treatment interventions paired with tDCS for adults with ASD. Differences in scores on the Empathy Quotient (EQ) and on a FERP test were predicted for verum tDCS when compared to sham. Verum/sham tDCS was randomly assigned in a within-subjects, double-blinded design in adults with ASD without intellectual disability. Results: Verum tDCS significantly improved EQ scores and FERP scores for emotions that conveyed threat. Conclusions: These results suggest the potential for increasing the efficacy of treatment interventions by pairing them with tDCS for individuals with ASD.

59 BASIC BIOLOGICAL SCIENCES↗

Assisted extraction of the energy level spacings and lever arms in direct current bias measurements of one-dimensional quantum wires, using an image recognition routine

A multiplexer technique is used to individually measure an array of 256 split gates on a single GaAs/AlGaAs heterostructure. This results in the generation of large volumes of data, which requires the development of automated data analysis routines. An algorithm is developed to find the spacing between discrete energy levels, which form due to transverse confinement from the split gate. The lever arm, which relates split gate voltage to energy, is also found from the measured data. This reduces the time spent on the analysis. Comparison with estimates obtained visually shows that the algorithm returns reliable results for subband spacing of split gates measured at 1.4 K. The routine is also used to assess direct current bias spectroscopy measurements at lower temperatures (50 mK). This technique is versatile and can be extended to other types of measurements. For example, it is used to extract the magnetic field at which Zeeman-split 1D subbands cross one another.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Transcranial direct current stimulation of dorsolateral prefrontal cortex during encoding improves recall but not recognition memory

Prior work demonstrates that application of transcranial direct current stimulation (tDCS) improves memory. In this study, we investigated tDCS effects on face-name associative memory using both recall and recognition tests. Participants encoded face-name pairs under either active (1.5 mA) or sham (.1 mA) stimulation applied to the scalp adjacent to the left dorsolateral prefrontal cortex (dlPFC), an area known to support associative memory. Participants’ memory was then tested after study (day one) and then again after a 24-h delay (day two), to assess both immediate and delayed stimulation effects on memory. Results indicated that active relative to sham stimulation led to substantially improved recall (more than 50%) at both day one and day two. Recognition memory performance did not differ between stimulation groups at either time point. These results suggest that stimulation at encoding improves memory performance by enhancing memory for details that enable a rich recollective experience, but that these improvements are evident only under some testing conditions, especially those that rely on recollection. Altogether, stimulation of the dlPFC could have led to recall improvement through enhanced encoding from stimulation or from carryover effects of stimulation that influenced retrieval processes, or both.

60 APPLIED LIFE SCIENCES↗

Understanding the Capabilities and Limitations of the Controls and Operations of High Voltage Direct Current (HVdc) Converters in Interconnected Electric Power Systems

This project will seek to build a fundamental understanding, and capability, to model and simulate the controls and operations of high voltage direct current (HVdc) converter stations in an electromagnetic simulation environment. While HVdc stations have been operated in the United States for over 50 years, these are typically simple two terminal point-to-point systems. Recently multi-terminal systems have begun to be deployed. The challenge with these new multi-terminal systems is that they often use different control schemes on the different terminals. The interactions of existing and new controls, and the fact that HVdc systems are rates in the 1,000’s of MWs means that small control instabilities can have dramatic impacts to bulk power systems. Despite these challenges, the operational capabilities of HVdc make them an attractive option for the transfer of the large amounts of renewable electricity that will be necessary for decarbonization of the nation’s electrical infrastructure and other sectors.

42 ENGINEERING↗

Differential Age Effects of Transcranial Direct Current Stimulation on Associative Memory

Abstract Objectives Older adults experience associative memory deficits relative to younger adults (Old & Naveh-Benjamin, 2008). The aim of this study was to test the effect of transcranial direct current stimulation (tDCS) on face-name associative memory in older and younger adults. Method Experimenters applied active (1.5 mA) or sham (0.1 mA) stimulation with the anode placed over the left dorsolateral prefrontal cortex (dlPFC) during a face-name encoding task, and measured both cued recall and recognition performance. Participants completed memory tests immediately after stimulation and after a 24-h delay to examine both immediate and delayed stimulation effects on memory. Results Results showed improved face-name associative memory performance for both recall and recognition measures, but only for younger adults, whereas there was no difference between active and sham stimulation for older adults. For younger adults, stimulation-induced memory improvements persisted after a 24-h delay, suggesting delayed effects of tDCS after a consolidation period. Discussion Although effective in younger adults, these results suggest that older adults may be resistant to this intervention, at least under the stimulation parameters used in the current study. This finding is inconsistent with a commonly seen trend, where tDCS effects on cognition are larger in older than younger adults.

Leach, Ryan C.↗

Experimental evaluation of direct current magnetron sputtered and high-power impulse magnetron sputtered Cr coatings on SiC for light water reactor applications

Two types of physical vapor deposition Cr coatings were deposited on chemical vapor deposited SiC coupons using conventional direct current magnetron sputtering (DCMS) and high-power impulse magnetron sputtering (HiPIMS) to mitigate the corrosion of SiC, an advanced fuel and structural material in light water nuclear reactor cores. Coating microstructure was characterized using scanning electron microscopy and scanning transmission election microscopy. X-ray diffraction analysis was conducted for phase identification and qualitative analysis of residual stresses. The mechanical integrity of the coatings was evaluated using scratch testing, micro-indentation, and nano-indentation tests. Additionally, the microstructure of the DCMS coating consisted of fine columnar grains with nanoscale intercolumnar channels, while the HiPIMS microstructure was denser and free of any columnar defects. The DCMS coating showed a small tensile residual stress, while the HiPIMS coating was under compressive stress. Both types of coatings showed good mechanical integrity in terms of ductility and adhesion to the substrate. Corrosion performance of the coatings was assessed with a 30-day high temperature water autoclave test. Both types of coatings formed a protective Cr 2 O 3 surface layer 20-30 nm thick during the autoclave test. In the DCMS coating, the columnar defects provided permeation pathways for water penetration resulting in oxide formation in the intercolumnar regions in the interior of the coating. Overall, both types of Cr coatings offer promise for the mitigation of hydrothermal corrosion of SiC in light water reactor operating environments.

36 MATERIALS SCIENCE↗

Final-stage densification kinetics of direct current–sinteredZrB2

Final-stage sintering was analyzed for nominally phase pure zirconium diboride synthesized by borothermal reduction of high-purity ZrO2. Analysis was conducted on ZrB2 ceramics with relative densities greater than 90% using the Nabarro–Herring stress–directed vacancy diffusion model. Temperatures of 1900°C or above and an applied uniaxial pressure of 50 MPa were required to fully densify ZrB2 ceramics by direct current sintering. Ram travel data were collected and used to determine the relative density of the specimens during sintering. Specimens sintered between 1900 and 2100°C achieved relative densities greater than 97%, whereas specimens sintered below 1900°C failed to reach the final stage of sintering. The average grain size ranged from 1.0 to 14.7 μm. The activation energy was calculated from the slope of an Arrhenius plot that used the Kalish equation. The activation energy was 162 ± 34 kJ/mol, which is consistent with the activation energy for dislocation movement in ZrB2. The diffusion coefficients for dislocation motion that controls densification were 5.1 × 10−6 cm2/s at 1900°C and 5.1 × 10−5 cm2/s at 2100°C, as calculated from activation energy and average grain sizes. This study provides evidence that the dominant mechanism for final-stage sintering of ZrB2 ceramics is dislocation motion.

36 MATERIALS SCIENCE↗

Global functional connectivity density alterations in patients with bipolar disorder with auditory verbal hallucinations and modest short‐term effects of transcranial direct current stimulation augmentation treatment—Baseline and follow‐up study

Abstract Objectives To investigate the neuroimaging characteristics of auditory verbal hallucinations (AVHs) in patients with bipolar disorder (BP) experiencing depressive episodes with and without AVHs, and alterations in those characteristics after transcranial direct current stimulation (tDCS). Methods For a baseline pilot study, we recruited 80 patients with BP and depressive status (40 with and 40 without AVHs), and 40 healthy controls (HCs). Their global functional connectivity density (gFCD) was screened by functional magnetic resonance imaging (fMRI). Voxel‐wise one‐way analysis of covariance (ANCOVA) was conducted to detect intergroup differences in gFCD. In a follow‐up study, the effects of 5 weeks of tDCS augmentation treatment on clinical symptoms and gFCD were assessed in the 40 BP patients with AVHs. Results Compared to HCs, BP patients with and without AVHs exhibited increased gFCD in the central parietal lobe, insular lobe, and middle cingulate cortex, with decreased gFCD in the posterior parietal cortex, lateral prefrontal cortex, and occipital lobe (all bilateral). Only patients with AVHs showed increased gFCD in the Broca and Wernicke regions, and decreased gFCD in the hippocampus (all bilateral). After 5 weeks of tDCS, AVHs were slightly alleviated and gFCD abnormalities in the hippocampus were mildly attenuated. Conclusions Patients with BP and AVHs showed disturbances in the brain's communication capacity mainly in the left frontoparietal network, control network, and memory circuitry. Five weeks of tDCS alleviated AVHs slightly, without improving depressive symptoms, and attenuated hippocampal gFCD alterations in these patients.

Zhuo, Chuanjun↗

Direct current in a stirred optical lattice

We study how the energy dispersion of bosonic atoms loaded into an optical lattice becomes modified due to periodic circular stirring of the lattice to the second order in the strength of stirring. If the lattice breaks mirror symmetry, the bosonic atoms may acquire a nonzero group velocity at the center of the Brillouin zone and produce a nonzero direct current. Furthermore, this effect is similar to the circular photogalvanic effect in solid-state physics. It can be used to transport neutral bosonic atoms in an optical lattice over a given distance in an arbitrary direction. However, when the drive frequency is detuned to avoid resonant transitions with energy absorption, we argue that the induced current is not persistent, but transient. An experimental study of the relaxation of the induced current can provide insight about equilibrization in driven systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Efficiency of Charge-Transfer Doping in Organic Semiconductors Probed with Quantitative Microwave and Direct-Current Conductance

Although molecular charge-transfer doping is widely used to manipulate carrier density in organic semiconductors, only a small fraction of charge carriers typically escape the Coulomb potential of dopant counterions to contribute to electrical conductivity. Here, we utilize microwave and direct-current (DC) measurements of electrical conductivity to demonstrate that a high percentage of charge carriers in redox-doped semiconducting single-walled carbon nanotube (s-SWCNT) networks is delocalized as a free carrier density in the p-electron system (estimated as >46% at high doping densities). The microwave and four-point probe conductivities of hole-doped s-SWCNT films quantitatively match over almost 4 orders of magnitude in conductance, indicating that both measurements are dominated by the same population of delocalized carriers. We address the relevance of this surprising one-to-one correspondence by discussing the degree to which local environmental parameters (e.g., tube-tube junctions, Coulombic stabilization, and local bonding environment) may impact the relative magnitudes of each transport measurement.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Grid-Assisted Direct-Current Magnetron Sputtering of Titanium: Plasma Discharge Diagnostics

Grid-assisted magnetron sputtering is attractive for the deposition of ultrathick Be coatings in inertial confinement fusion (ICF) applications because it offers improved control over the plasma. Here, we investigate the plasma discharge characteristics of grid-assisted direct current magnetron sputtering with Ti as a surrogate sputter target material instead of Be. We map the magnetic field of our magnetron source assembly, study the current-voltage characteristics of both the source and the substrate, and measure the energy distributions of ions bombarding the film surface during growth. The results reveal a slightly asymmetric magnetic field of the magnetron source array and strong dependencies of the plasma discharge characteristics on both the grid and the substrate voltages. Positive grid voltage increases both target and substrate currents, increases the plasma potential, and broadens the energy distributions of ions bombarding the substrate. Grid biasing effects on the plasma discharge characteristics and substrate current can be attributed to corresponding changes to the plasma potential, while substrate biasing effects are more complex and nonlinear. Furthermore, these results demonstrate that grid-assisted deposition offers additional flexibility in controlling the deposition process for tuning properties of ultrathick films for ICF applications.

ICF targets↗