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Degradation Analysis of Organic Light-Emitting Diodes through Dispersive Magneto-Electroluminescence Response
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Carrier Dynamics of Polar, Semipolar, and Nonpolar InGaN/GaN LEDs Measured by Small-Signal Electroluminescence
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Transforming Electroluminescence Images to Current-Voltage (IV) Curves Using Deep Learning
Presentation for 2024 PVSC 52 on EL images to IV curves
Laboratory Hail Damage of Photovoltaic Modules: Electroluminescence and High-speed Digital Image Correlation Analysis
This work experimentally investigates hail-related failures in Glass/Backsheet and Glass/Glass PV modules with varying ice ball diameters and velocities.
A Generative Model for Synthetic Electroluminescence Images
This work will develop modular, open-source model and analysis components including crack detection workflow and parameterization for quantitative inspection of large EL large datasets. These tools will allow users to quickly and accurately assess the extent and types of cracking in their modules. Measured statistical distributions of crack parameters, together with the imposed stress and electrical properties will be used to generate models to predict future crack behavior and power loss.
Gas Electroluminescence in a Dual Phase Xenon-Doped Argon TPC
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Organic electroluminescent materials and devices
A compound of Formula X wherein ring A is absent, or present and selected from a 5-membered or 6-membered, carbocyclic or heterocyclic ring, which is optionally substituted; ring B is absent, or present and selected from a 5-membered or 6-membered, carbocyclic or heterocyclic ring, which is optionally substituted; and at least one of ring A or ring B is present, and the hash line represents ring A fused to ring N—W 1 —W 3 and ring B fused to ring N—W 4 —W 6 ; W 1 , W 2 , W 3 , W 4 , W 5 , and W 6 are independently selected from CR 1 or N; Z is selected from CR Z or N; and Y is selected from a group consisting of C(R 2 ) 2 , B(R 2 ) 2 , Al(R 2 ) 2 , Si(R 2 ) 2 , and Ge(R 2 ) 2 . An optoelectronic device selected from the group consisting of a photovoltaic device, a photodetector device, a photosensitive device, and an OLED, the optoelectronic device including an organic layer that comprises a compound of Formula X. A consumer product that includes the optoelectronic device.
Organic electroluminescent materials and devices
A compound of Formula X wherein ring A is absent, or present and selected from a 5-membered or 6-membered, carbocyclic or heterocyclic ring, which is optionally substituted; ring B is absent, or present and selected from a 5-membered or 6-membered, carbocyclic or heterocyclic ring, which is optionally substituted; and at least one of ring A or ring B is present, and the hash line represents ring A fused to ring N—W 1 —W 2 and ring B fused to ring N—W 3 —W 4 ; W 1 , W 2 , W 3 , W 4 , W 5 , and W 6 are independently selected from CR 1 or N; Z is selected from CR Z or N; and Y is selected from a group consisting of C(R 2 ) 2 , B(R 2 ) 2 , Al(R 2 ) 2 , Si(R 2 ) 2 , and Ge(R 2 ) 2 . An optoelectronic device selected from the group consisting of a photovoltaic device, a photodetector device, a photosensitive device, and an OLED, the optoelectronic device including an organic layer that comprises a compound of Formula X. A consumer product that includes the optoelectronic device.
Laboratory Hail Damage of Photovoltaic Modules: Electroluminescence and High-speed Digital Image Correlation Analysis
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Transforming Electroluminescence Images to Current-Voltage (IV)Curves Using Deep Learning
3 page evaluation abstract for PVSC 52
Voltage mapping and local defects identification in solar cells using non-contact method
Electroluminescence, infrared imaging, and current–voltage curve techniques are used to detect and map underperforming cells in a photovoltaic module or the modules in a photovoltaic string. In this work, we present a non-contact electrostatic voltmeter technique to detect and map the underperforming spots in a cell and the cells in a module. This non-contact technique directly maps the charged surface voltage (671mV) of the superstrate glass, and it had an 11-mV difference with the voltmeter values (660mV). Another data set of voltage values obtained by electroluminescence images conversion into a voltage map showed a difference of 7mV with the non-contact voltmeter values. Further, the direct voltage values obtained at various good and poor-performing spots of the cells using this technique are 3.69V and 3.79V and are validated using the voltage values obtained in electroluminescence analysis and the difference in voltage obtained by the two techniques is determined to be less than 2%. In this work, we combine the strengths of two complementary techniques of the electrostatic voltmeter (strength: quantitative) and electroluminescence (strength: spatial mapping) to obtain a quantitative spatial mapping of defects. Furthermore, this work is extendable to detect the poor-performing modules in solar PV power plants.
Direct Optical Patterning of Quantum Dot Light-Emitting Diodes via In Situ Ligand Exchange
Precise patterning of quantum dot (QD) layers is an important prerequisite for fabricating QD light-emitting diode (QLED) displays and other optoelectronic devices. However, conventional patterning methods cannot simultaneously meet the stringent requirements of resolution, throughput, and uniformity of the pattern profile while maintaining a high photoluminescence quantum yield (PLQY) of the patterned QD layers. Here, a specially designed nanocrystal ink is introduced, "photopatternable emissive nanocrystals" (PENs), which satisfies these requirements. Photoacid generators in the PEN inks allow photoresist-free, high-resolution optical patterning of QDs through photochemical reactions and in situ ligand exchange in QD films. Various fluorescence and electroluminescence patterns with a feature size down to approximate to 1.5 mu m are demonstrated using red, green, and blue PEN inks. The patterned QD films maintain approximate to 75% of original PLQY and the electroluminescence characteristics of the patterned QLEDs are comparable to thopse of non-patterned control devices. The patterning mechanism is elucidated by in-depth investigation of the photochemical transformations of the photoacid generators and changes in the optical properties of the QDs at each patterning step. This advanced patterning method provides a new way for additive manufacturing of integrated optoelectronic devices using colloidal QDs.
High-efficiency stretchable light-emitting polymers from thermally activated delayed fluorescence
Stretchable light-emitting materials are the key components for realizing skin-like displays and optical biostimulation. All the stretchable emitters reported to date, to the best of our knowledge, have been based on electroluminescent polymers that only harness singlet excitons, limiting their theoretical quantum yield to 25%. Here we present a design concept for imparting stretchability onto electroluminescent polymers that can harness all the excitons through thermally activated delayed fluorescence, thereby reaching a near-unity theoretical quantum yield. We show that our design strategy of inserting flexible, linear units into a polymer backbone can substantially increase the mechanical stretchability without affecting the underlying electroluminescent processes. As a result, our synthesized polymer achieves a stretchability of 125%, with an external quantum efficiency of 10%. Additionally, we demonstrate a fully stretchable organic light-emitting diode, confirming that the proposed stretchable thermally activated delayed fluorescence polymers provide a path towards simultaneously achieving desirable electroluminescent and mechanical characteristics, including high efficiency, brightness, switching speed and stretchability as well as low driving voltage.
On the confluence of ultrafast high-temperature sintering and flash sintering phenomena
Ultrafast high-temperature sintering (UHS) and flash sintering are novel methods for rapid sintering of ceramics, often completed in just a few seconds. Here, we show that both also share two additional features: an abrupt rise in electrical conductivity, which is electronic, and electroluminescence. More fundamentally, both are related to phonon physics where MD calculations have shown that proliferation of phonons at the edge of the Brillouin zone can induce Frenkel pairs without the application of electrical fields. Here, we show that, indeed, heating without the application of electric field, can also induce flash: Rapid heating processes of thin films of an oxide-salt deposited on silk fibers, with a propane torch, are shown to induce electronic conductivity, electroluminescence, and rapid sintering of the oxide. Further, the discussion in this article harkens back to two inventions, more than a century ago, which can now be related to flash and UHS: (i) the Nernst glow lamp circa 1900, made from zirconia, and (ii) the Welsbach mantle, constituted from ceria doped thorium oxide, in the late nineteenth century. Thus, the confluence between high heating rate and electric field induced flash phenomena links the past to the new. The emerging question is how injection of phonons that has been shown to create Frenkels can further induce high electronic conductivity and electroluminescence in oxides. Both electronic conductivity and luminescence are likely related to the generation of electron–hole pairs.
Local Resistance Measurement for Degradation of c-Si Heterojunction with Intrinsic Thin Layer (HIT) Solar Modules
Silicon heterojunction with intrinsic thin layer (or HIT) modules typically degrade at a rate of less than 1% annually in solar fields with dominant degradation in open-circuit voltage and some degradation in series resistance. However, detailed mechanisms can differ from module to module. Here, we study increases in local series resistance that occur over long-term field deployment, indicated by cell areas where the photoluminescence intensity does not degrade but the electroluminescence degrades significantly. To directly measure the local series resistance, we have cored out the local electroluminescence-degraded area, and we measured the sheet resistance by 4-point-probe and local nm-scale resistance using scanning spreading resistance microscopy (SSRM). The results by 4-point-probe show scattered sheet resistance that can be caused, for example, by nonuniform current paths through the transparent conductive oxide layer, the a-Si:H emitter, or the near-junction c-Si inversion layer. In contrast, the SSRM results indicate a relatively uniform and non-degraded resistivity on smaller nanometer spatial scales. SSRM is an atomic force microscopy-based two-terminal resistance mapping technique that measures the local resistance in nm-volume beneath the probe. The consistent resistances measured on the control and degraded samples can exclude the degradation of transparent conductive oxide resistance.