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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Improved transistor-controlled and commutated brushless DC motors for electric vehicle propulsion

The development, design, construction, and testing processes of two electronically (transistor) controlled and commutated permanent magnet brushless dc machine systems, for propulsion of electric vehicles are detailed. One machine system was designed and constructed using samarium cobalt for permanent magnets, which supply the rotor (field) excitation. Meanwhile, the other machine system was designed and constructed with strontium ferrite permanent magnets as the source of rotor (field) excitation. These machine systems were designed for continuous rated power output of 15 hp (11.2 kw), and a peak one minute rated power output of 35 hp (26.1 kw). Both power ratings are for a rated voltage of 115 volts dc, assuming a voltage drop in the source (battery) of about 5 volts. That is, an internal source voltage of 120 volts dc. Machine-power conditioner system computer-aided simulations were used extensively in the design process. These simulations relied heavily on the magnetic field analysis in these machines using the method of finite elements, as well as methods of modeling of the machine power conditioner system dynamic interaction. These simulation processes are detailed. Testing revealed that typical machine system efficiencies at 15 hp (11.2 kw) were about 88% and 84% for the samarium cobalt and strontium ferrite based machine systems, respectively. Both systems met the peak one minute rating of 35 hp.

Demerdash, N. A.↗
NASA NTRS1996

Technology Directions for the 21st Century, volume 1

For several decades, semiconductor device density and performance have been doubling about every 18 months (Moore's Law). With present photolithography techniques, this rate can continue for only about another 10 years. Continued improvement will need to rely on newer technologies. Transition from the current micron range for transistor size to the nanometer range will permit Moore's Law to operate well beyond 10 years. The technologies that will enable this extension include: single-electron transistors; quantum well devices; spin transistors; and nanotechnology and molecular engineering. Continuation of Moore's Law will rely on huge capital investments for manufacture as well as on new technologies. Much will depend on the fortunes of Intel, the premier chip manufacturer, which, in turn, depend on the development of mass-market applications and volume sales for chips of higher and higher density. The technology drivers are seen by different forecasters to include video/multimedia applications, digital signal processing, and business automation. Moore's Law will affect NASA in the areas of communications and space technology by reducing size and power requirements for data processing and data fusion functions to be performed onboard spacecraft. In addition, NASA will have the opportunity to be a pioneering contributor to nanotechnology research without incurring huge expenses.

Crimi, Giles F.↗
NASA NTRS2005

500(deg)C electronics for harsh environments

Solid state vacuum devices (SSVDs) are a relatively new class of electronic devices. Innosys is a leading producer of high frequency SSVDs for a number of applications, including RF communications. SSVDs combine features inherent to both solid state and vacuum transistors. Electron transport can be by solid state or vacuum or both. The focus of this talk is on thermionic SSVDs, in which the primary vacuum transport is by thermionically liberated electron emission.

high temperature electronics↗
NASA NTRS2006

Using Quasiparticle Poisoning To Detect Photons

According to a proposal, a phenomenon associated with excitation of quasiparticles in certain superconducting quantum devices would be exploited as a means of detecting photons with exquisite sensitivity. The phenomenon could also be exploited to perform medium-resolution spectroscopy. The proposal was inspired by the observation that Coulomb blockade devices upon which some quantum logic gates are based are extremely sensitive to quasiparticles excited above the superconducting gaps in their leads. The presence of quasiparticles in the leads can be easily detected via the charge states. If quasiparticles could be generated in the leads by absorption of photons, then the devices could be used as very sensitive detectors of electromagnetic radiation over the spectral range from x-rays to submillimeter waves. The devices in question are single-Cooper-pair boxes (SCBs), which are mesoscopic superconducting devices developed for quantum computing. An SCB consists of a small superconducting island connected to a reservoir via a small tunnel junction and connected to a voltage source through a gate capacitor. An SCB is an artificial two-level quantum system, the Hamiltonian of which can be controlled by the gate voltage. One measures the expected value of the charge of the eigenvectors of this quantum system by use of a radio-frequency single-electron transistor. A plot of this expected value of charge as a function of gate voltage resembles a staircase that, in the ideal case, consists of steps of height 2 e (where e is the charge of one electron). Experiments have shown that depending on the parameters of the device, quasiparticles in the form of "broken" Cooper pairs present in the reservoir can tunnel to the island, giving rise to steps of 1 e. This effect is sometimes called "poisoning." Simulations have shown that an extremely small average number of quasiparticles can generate a 1-e periodic signal. In a device according to the proposal, this poisoning would be turned to advantage. Depending on the wavelength, an antenna or other component would be used to couple radiation into the reservoir, wherein the absorption of photons would break Cooper pairs, thereby creating quasiparticles that, in turn, would tunnel to the island, creating a 1-e signal. On the basis of conservative estimates of device parameters derived from experimental data and computational simulations that fit the data, it has been estimated that the noise equivalent power of a device according to the proposal could be as low as 6 10(exp -22) W/Hz(exp 1/2). It has also been estimated that the spectroscopic resolution (photon energy divided by increment of photon energy) of such a device in visible light would exceed 100.

Echternach, Pierre↗
NASA NTRS1965

Insulator-holder protects transistors in dense electronic assemblies

Molded insulating spacer with one or more cavities is used as an insulated holder for mounting metal-case transistors in a chassis containing densely packed electronic components. The transistors are mechanically supported on their bases and electrically isolated from each other by the holder.

Source record↗
NASA NTRS2015

New Insights on Subsurface Imaging of Carbon Nanotubes in Polymer Composites via Scanning Electron Microscopy

Despite many studies of subsurface imaging of carbon nanotube (CNT)-polymer composites via scanning electron microscopy (SEM), significant controversy exists concerning the imaging depth and contrast mechanisms. We studied CNT-polyimide composites and, by threedimensional reconstructions of captured stereo-pair images, determined that the maximum SEM imaging depth was typically hundreds of nanometers. The contrast mechanisms were investigated over a broad range of beam accelerating voltages from 0.3 to 30 kV, and ascribed to modulation by embedded CNTs of the effective secondary electron (SE) emission yield at the polymer surface. This modulation of the SE yield is due to non-uniform surface potential distribution resulting from current flows due to leakage and electron beam induced current. The importance of an external electric field on SEM subsurface imaging was also demonstrated. The insights gained from this study can be generally applied to SEM nondestructive subsurface imaging of conducting nanostructures embedded in dielectric matrices such as graphene-polymer composites, silicon-based single electron transistors, high resolution SEM overlay metrology or e-beam lithography, and have significant implications in nanotechnology.

Zhao, Minhua↗
NASA NTRS2003

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony, concentration was approximately 4 x 10(exp19) per cubic cm. The electron mobility was over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per sq cm, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V(sub DS)) range, with (V(sub DS)) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

Alterovitz, Samuel A.↗
NASA NTRS2004

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony concentration was approximately 4 x 10(exp 19) per cubic centimeter. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per square centimeter, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V (sub DS)) range, with V (sub DS) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

Alterovitz, Samuel A.↗
NASA NTRS2002

Simulation Model of A Ferroelectric Field Effect Transistor

An electronic simulation model has been developed of a ferroelectric field effect transistor (FFET). This model can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The model uses a previously developed algorithm that incorporates partial polarization as a basis for the design. The model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current has values matching actual FFET's, which were measured experimentally. The input and output resistance in the model is similar to that of the FFET. The model is valid for all frequencies below RF levels. A variety of different ferroelectric material characteristics can be modeled. The model can be used to design circuits using FFET'S with standard electrical simulation packages. The circuit can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The model is a drop in library that integrates seamlessly into a SPICE simulation. A comparison is made between the model and experimental data measured from an actual FFET.

MacLeod, Todd C.↗
NASA NTRS1987

Low-noise cryogenic transmission line

New low-noise cryogenic input transmission lines have been developed for the Deep Space Network (DSN) at 1.668 GHz for cryogenically cooled Field Effect Transistors (FET) and High Electron Mobility Transistor (HEMT) amplifiers. These amplifiers exhibit very low noise temperatures of 5 K to 15 K, making the requirements for a low-noise input transmission line critical. Noise contribution to the total amplifier system from the low-noise line is less than 0.5 K for both the 1.668-GHz and 2.25-GHz FET systems. The 1.668-GHz input line was installed in six FET systems which were implemented in the DSN for the Venus Balloon Experiment. The 2.25-GHz input line has been implemented in three FET systems for the DSN 34-m HEF antennas, and the design is currently being considered for use at higher frequencies.

Norris, D.↗
NASA NTRS1988

X-band system performance of the very large array

The Very Large Array (VLA) is being equipped to receive telemetry from Voyager 2 during the Neptune encounter in 1989. Cryogenically cooled amplifiers are being installed on each of the 27 antennas. These amplifiers are currently a mix of field effect transistors (FETs) and high electron mobility transistors (HEMTs) and exhibit zenith system temperatures that range from 30 to 52 K. The system temperatures and aperture efficiencies determined during the past year are summarized. The nominal values of the noise diode calibration are compared with derived values made under the assumption of a uniform atmosphere over the array. Gain values are determined from observations of unresolved radio sources whose flux densities are well known. The tests suggest that the completed VLA will have a ratio of gain to system temperature that is approximately 4.4 dB above that of a single 64 m antenna of the Deep Space Network.

Ulvestad, J. S.↗
NASA NTRS2001

Electronic Model of a Ferroelectric Field Effect Transistor

A pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's. Each model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current from each model has similar values to an actual FFET that was measured experimentally. T'he input and o Output resistance in the models are also similar to that of the FFET. The models are valid for all frequencies below RF levels. No attempt was made to model the high frequency characteristics of the FFET. Each model can be used to design circuits using FFET's with standard electrical simulation packages. These circuits can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The models consist of only standard electrical components, such as BJT's, MOSFET's, diodes, resistors, and capacitors. Each model is compared to the experimental data measured from an actual FFET.

MacLeod, Todd C.↗
NASA NTRS2010

Special Component Designs for Differential-Amplifier MMICs

Special designs of two types of electronic components transistors and transmission lines have been conceived to optimize the performances of these components as parts of waveguide-embedded differential-amplifier monolithic microwave integrated circuits (MMICs) of the type described in the immediately preceding article. These designs address the following two issues, the combination of which is unique to these particular MMICs: Each MMIC includes a differential double-strip transmission line that typically has an impedance between 60 and 100 W. However, for purposes of matching of impedances, transmission lines having lower impedances are also needed. The transistors in each MMIC are, more specifically, one or more pair(s) of InP-based high-electron-mobility transistors (HEMTs). Heretofore, it has been common practice to fabricate each such pair as a single device configured in the side-to-side electrode sequence source/gate/drain/gate/source. This configuration enables low-inductance source grounding from the sides of the device. However, this configuration is not suitable for differential operation, in which it is necessary to drive the gates differentially and to feed the output from the drain electrodes differentially. The special transmission-line design provides for three conductors, instead of two, in places where lower impedance is needed. The third conductor is a metal strip placed underneath the differential double-strip transmission line. The third conductor increases the capacitance per unit length of the transmission line by such an amount as to reduce the impedance to between 5 and 15 W. In the special HEMT-pair design, the side-to-side electrode sequence is changed to drain/gate/source/gate/ drain. In addition, the size of the source is reduced significantly, relative to corresponding sizes in prior designs. This reduction is justified by the fact that, by virtue of the differential configuration, the device has an internal virtual ground, and therefore there is no need for a low-resistance contact between the source and the radio-frequency circuitry. The source contact is needed only for DC biasing. These designs were implemented in a single-stage-amplifier MMIC. In a test at a frequency of 305 GHz, the amplifier embedded in a waveguide exhibited a gain of 0 dB; after correcting for the loss in the waveguide, the amplifier was found to afford a gain of 0.9 dB. In a test at 220 GHz, the overall gain of the amplifier- and-waveguide assembly was found to be 3.5 dB.

Kangaslahti, Pekka↗
NASA NTRS2003

80-GHz MMIC HEMT Voltage-Controlled Oscillator

A voltage-controlled oscillator (VCO) that operates in the frequency range from 77.5 to 83.5 GHz has been constructed in the form of a monolithic microwave integrated circuit (MMIC) that includes high-electron-mobility transistors (HEMTs). This circuit is a prototype of electronically tunable signal sources in the 75-to-110-GHz range, needed for communication, imaging, and automotive radar applications, among others. This oscillator (see Figure 1) includes two AlInAs/GaInAs/InP HEMTs. One HEMT serves mainly as an oscillator gain element. The other HEMT serves mainly as a varactor for controlling the frequency: the frequency-control element is its gate-to-source capacitance, which is varied by changing its gate supply voltage. The gain HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle). Grounded coplanar waveguides are used as impedance-matching transmission lines, the input and output matching being chosen to sustain oscillation and maximize output power. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. A high density of vias is necessary for suppressing a parallel-plate electromagnetic mode that is undesired because it can propagate energy into the MMIC substrate. Previous attempts at constructing HEMT-based oscillators yielded circuits with relatively low levels of output power and narrow tuning ranges. For example, one HEMT VCO reported in the literature had an output power of 7 dBm (.5 mW) and a tuning range 2-GHz wide centered approximately at a nominal frequency of 77 GHz. In contrast, as shown in Figure 2, the present MMIC HEMT VCO puts out a power of 12.5 dBm (.18 mW) or more over the 6-GHz-wide frequency range from 77.5 to 83.5 GHz

Samoska, Lorene↗