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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Analysis of a Memory Device Failure

The recent failure of a vintage memory device presented a unique challenge to failure analysts. Normally device layouts, fabrication parameters and other technical information were available to assist the analyst in the analysis. However, this device was out of production for many years and the manufacturer was no longer in business, so the information was not available. To further complicate this analysis, the package leads were all but removed making additional electrical testing difficult. Under these conditions, new and innovative methods were used to analyze the failure. The external visual exam, radiography, PIND, and leak testing were performed with nominal results. Since electrical testing was precluded by the short lead lengths, the device was delidded to expose the internal structures for microscopic examination. No failure mechanism was identified. The available electrical data suggested an ESD or low level EOS type mechanism which left no visible surface damage. Due to parallel electrical paths, electrical probing on the chip failed to locate the failure site. Two non-destructive Scanning Electron Microscopy techniques, CIVA (Charge Induced Voltage Alteration) and EBIC (Electron Beam Induced Current), and a liquid crystal decoration technique which detects localized heating were employed to aid in the analysis. CIVA and EBIC isolated two faults in the input circuitry, and the liquid crystal technique further localized two hot spots in regions on two input gates. Removal of the glassivation and metallization revealed multiple failure sites located in the gate oxide of two input transistors suggesting machine (testing) induced damage.

Nicolas, David P.↗
NASA NTRS2000

Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes

We show the first direct experimental correlation between the presence of closed core screw dislocations in 6H-SiC epilayers with recombination centers, as well as with some of the small growth pits on the epilayer surface in lightly-doped 6H-SiC Schottky diodes. At every Synchrotron White-Beam X-ray Topography (SWBXT)-identified closed core screw dislocation, an Electron Beam Induced Current (EBIC) image showed a dark spot indicating a recombination center, and Nomarski optical microscope and Atomic Force Microscope (AFM) images showed a corresponding small growth pit with a sharp apex on the surface of the epilayer.

Schnable, C. M.↗
NASA NTRS2004

Measurement of N-Type 6H SiC Minority-Carrier Diffusion Lengths by Electron Bombardment of Schottky Barriers

Minority-Carrier diffusion lengths of n-type 6H-SiC were measured using the electron-beam induced current (EBIC) technique. Experimental values of primary beam current, EBIC, and beam voltage were obtained for a variety of SIC samples. This data was used to calculate experimental diode efficiency vs. beam voltage curves. These curves were fit to theoretically calculated efficiency curves, and the diffusion length and metal layer thickness were extracted. The hole diffusion length in n-6H SiC ranged from 0.93 +/- 0.15 microns.

Hubbard, S. M.↗
NASA NTRS2005

High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/GeSi/Si substrate show nearly identical I-V characteristics in both forward and reverse bias regions. External quantum efficiencies of AlGaAs/GaAs cell structures grown on Ge/GeSi/Si and Ge substrates demonstrated nearly identical photoresponse, which indicates that high lifetimes, diffusion lengths and efficient minority carrier collection is maintained after complete cell processing.

Carlin, J. A.↗
NASA NTRS1979

Silicon solar cell fabrication technology

The laser cell scanner was used to characterize a number of solar cells made in various materials. An electron beam-induced current (EBIC) study was performed using a stereoscan scanning electron microscope. Planar p-n junctions were analyzed. A theory for the EBIC based on the analytical solution of the ambipolar diffusion equation under the influence of electron beam excitation parameter z (which is related to beam penetration), the junction depth Z sub j, the beam current and the surface recombination, was formulated and tested. The effect of a grain boundary was studied.

Stafsudd, O. M.↗
NASA NTRS1977

Surface recombination velocity and diffusion length of minority carriers in heavily doped silicon layers

Quantitative analysis of the electron beam-induced current and the dependence of the effective diffusion length of the minority carriers on the penetration depth of the electron beam were employed for the analysis of the carrier recombination characteristics in heavily doped silicon layers. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two dimensional mapping of the surface recombination velocity of P-diffused Si layers will be presented together with a three dimensional mapping of minority carrier lifetime in ion implanted Si. Layers heavily doped with As exhibit improved recombination characteristics as compared to those of the layers doped with P.

Gatos, H. C.↗
NASA NTRS1985

EBIC spectroscopy - A new approach to microscale characterization of deep levels in semi-insulating GaAs

The microscale characterization of electronic defects in (SI) GaAs has been a challenging issue in connection with materials problems encountered in GaAs IC technology. The main obstacle which limits the applicability of high resolution electron beam methods such as Electron Beam-Induced Current (EBIC) and cathodoluminescence (CL) is the low concentration of free carriers in semiinsulating (SI) GaAs. The present paper provides a new photo-EBIC characterization approach which combines the spectroscopic advantages of optical methods with the high spatial resolution and scanning capability of EBIC. A scanning electron microscope modified for electronic characterization studies is shown schematically. The instrument can operate in the standard SEM mode, in the EBIC modes (including photo-EBIC and thermally stimulated EBIC /TS-EBIC/), and in the cathodo-luminescence (CL) and scanning modes. Attention is given to the use of CL, Photo-EBIC, and TS-EBIC techniques.

Li, C.-J.↗
NASA NTRS1985

Compositional analysis of silicon

The use of surface analysis methods in the detection and evaluation of elemental and impurity species in Si is presented. Examples are provided from polycrystalline Si and high-efficiency MINP cells. Auger electron spectroscopy and secondary ion mass spectrometry are used to complement microelectrical data obtained by electron-beam induced-current measurements. A new method is discussed which utilizes the volume indexing of digital secondary ion mass spectroscopy signals, providing compositional information and impurity maps on internal materials/device interfaces.

Kazmerski, L. L.↗
NASA NTRS1983

Analysis of the interaction of an electron beam with back surface field solar cells

In this paper the short circuit current Isc induced by the electron beam of a scanning electron microscope in a back surface field solar cell will be determined theoretically. It will be shown that, in a configuration used previously for solar cells with an ohmic back surface, the Isc gives a convenient means for estimating the back surface recombination velocities and thus the quality of back surface field cells. Numerical data will be presented applicable to a point source model for the electron-hole pair generation.

Von Roos, O.↗
NASA NTRS1983

Electron Beam Could Probe Recombination Centers

Electron beam probe technique estimate electron/hole capture cross sections in semiconductors with wide band gaps. Amplitude-modulated electron beam induces short-circuit current collected by ohmic contacts. Phase shift between this current and electron-beam current measured as function of frequency. Results of measurements used to ascertain recombination rates and energy levels.

Vonroos, O.↗
NASA NTRS1979

On the determination of diffusion lengths by means of angle-lapped p-n junctions

A standard procedure for determining the minority carrier diffusion length by means of SEM consists of scanning an angle-lapped surface of a p-n junction and measuring the resulting short circuit current as a function of beam position. The present paper points out that the usual expression linking the short circuit current induced by the electron beam to the angle between the semiconductor surface and the junction plane is incorrect. The correct expression is discussed and it is noted that, for angles less than 10 deg, the new and the old expression are practically indistinguishable.

Von Roos, O.↗
NASA NTRS1977

Induced charging of shuttle orbiter by high electron-beam currents

Emission of high-current electron beams that was proposed for some Spacelab payloads required substantial return currents to the orbiter skin in order to neutralize the beam charge. Since the outer skin of the vehicle was covered with approximately 1200 sq m of thermal insulation which has the dielectric quality of air and an electrical conductivity that was estimated by NASA at 10 to the -9 power to 10 to the -10 power mhos/m, considerable transient charging and local potential differences were anticipated across the insulation. The theory for induced charging of spacecraft due to operation of electron guns was only developed for spherical metal vehicles and constant emission currents, which were not directly applicable to the orbiter situation. Field-aligned collection of electron return current from the ambient ionosphere at orbiter altitudes provides up to approximately 150 mA on the conducting surfaces and approximately 2.4 A on the dielectric thermal insulation. Local ionization of the neutral atmosphere by energetic electron bombardment or electrical breakdown may provide somewhat more return current.

Liemohn, H. B.↗
NASA NTRS1984

Magnetron Sputtered Gold Contacts on N-gaas

Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

Buonaquisti, A. D.↗
NASA NTRS1986

Development of high-efficiency solar cells on silicon web

Achievement of higher efficiency cells by directing efforts toward identifying carrier loss mechanisms; design of cell structures; and development of processing techniques are described. Use of techniques such as deep-level transient spectroscopy (DLTS), laser-beam-induced current (LBIC), and transmission electron microscopy (TEM) indicated that dislocations in web material rather than twin planes were primarily responsible for limiting diffusion lengths in the web. Lifetimes and cell efficiencies can be improved from 19 to 120 microns, and 8 to 10.3% (no AR), respectively, by implanting hydrogen at 1500 eV and a beam current density of 2.0 mA/sq cm. Some of the processing improvements included use of a double-layer AR coating (ZnS and MgF2) and an addition of an aluminum back surface reflectors. Cells of more than 16% efficiency were achieved.

Meier, D. L.↗
NASA NTRS2004

Electron Emission Properties of Insulator Materials Pertinent to the International Space Station

We present the results of our measurements of the electron emission properties of selected insulating and conducting materials used on the International Space Station (ISS). Utah State University (USU) has performed measurements of the electron-, ion-, and photon-induced electron emission properties of conductors for a few years, and has recently extended our capabilities to measure electron yields of insulators, allowing us to significantly expand current spacecraft material charging databases. These ISS materials data are used here to illustrate our various insulator measurement techniques that include: i) Studies of electron-induced secondary and backscattered electron yield curves using pulsed, low current electron beams to minimize deleterious affects of insulator charging. ii) Comparison of several methods used to determine the insulator 1st and 2nd crossover energies. These incident electron energies induce unity total yield at the transition between yields greater than and less than one with either negative or positive charging, respectively. The crossover energies are very important in determining both the polarity and magnitude of spacecraft surface potentials. iii) Evolution of electron emission energy spectra as a function of insulator charging used to determine the surface potential of insulators. iv) Surface potential evolution as a function of pulsed-electron fluence to determine how quickly insulators charge, and how this can affect subsequent electron yields. v) Critical incident electron energies resulting in electrical breakdown of insulator materials and the effect of breakdown on subsequent emission, charging and conduction. vi) Charge-neutralization techniques such as low-energy electron flooding and UV light irradiation to dissipate both positive and negative surface potentials during yield measurements. Specific ISS materials being tested at USU include chromic and sulfuric anodized aluminum, RTV-silicone solar array adhesives, solar cell cover glasses, Kapton, and gold. Further details of the USU testing facilities, the instrumentation used for insulator measurements, and the NASA/SEE Charge Collector materials database are provided in other Spacecraft Charging Conference presentations (Dennison, 2003b). The work presented was supported in part by the NASA Space Environments and Effects (SEE) Program, the Boeing Corporation, and a NASA Graduate Fellowship. Samples were supplied by Boeing, the Environmental Effects Group at Marshall Space Flight Center, and Sheldahl, Inc.

Thomson, C. D.↗
NASA NTRS1969

Cathodochromic storage device

A memory and display device has been developed by combing a fast phosphor layer with a cathodochromic layer in a cathode ray tube. Images are stored as patterns of electron beam induced optical density in the cathodo-chromic material. The stored information is recovered by exciting the backing, fast phosphor layer with a constant current electron beam and detecting the emitted radiation which is modulated by absorption in the cathodochromic layer. The storage can be accomplished in one or more TV frames (1/30 sec each). More than 500 TV line resolution and close to 2:1 contrast ratio are possible. The information storage time in a dark environment is approximately 24 hours. A reconstituted (readout) electronic video signal can be generated continuously for times in excess of 10 minutes or periodically for several hours.

Bosomworth, D. R.↗
NASA NTRS1980

Measurement of minority-carrier drift mobility in solar cells using a modulated electron beam

A determination of diffusivity on solar cells is here reported which utilizes a one dimensional treatment of diffusion under sinusoidal excitation. An intensity-modulated beam of a scanning electron microscope was used as a source of excitation. The beam was injected into the rear of the cell, and the modulated component of the induced terminal current was recovered phase sensitively. A Faraday cup to measure the modulated component of beam current was mounted next to the sample, and connected to the same electronics. A step up transformer and preamplifier were mounted on the sample holder. Beam currents on the order of 400-pA were used in order to minimize effects of high injection. The beam voltage was 34-kV, and the cell bias was kept at 0-V.

Othmer, S.↗