Electron shielding in heavily doped semiconductors.
Electron shielding in heavily doped many valley semiconductors, discussing Thomas-Fermi screening and Mott transition
Krieger, J. B.↗
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Electronic mobility, doping, and defects in epitaxial BaZrS 3 chalcogenide perovskite thin films
We present the electronic transport properties of BaZrS 3 thin films grown epitaxially by gas-source molecular beam epitaxy. We observe n-type behavior in all samples, with carrier concentration ranging from 4 × 10 18 to 4 × 10 20 cm −3 at room temperature (RT). We observe a champion RT Hall mobility of 11.1 cm 2 V −1 s −1 , which is competitive with established thin-film photovoltaic absorbers. Temperature-dependent Hall mobility data show that phonon scattering dominates at room temperature, in agreement with computational predictions. X-ray diffraction data illustrate a correlation between mobility and antiphase boundary concentration, illustrating how microstructure can affect transport. Despite the well-established environmental stability of chalcogenide perovskites, we observe significant changes to electronic properties as a function of storage time in ambient conditions. With the help of secondary ion mass spectrometry measurements, we propose and support a defect mechanism that explains this behavior: as-grown films have a high concentration of sulfur vacancies that are shallow donors (V ⋅ S or V ⋅⋅ S ), which are converted into neutral oxygen defects (O$^{×}_{S}$) upon air exposure. We discuss the relevance of this defect mechanism within the larger context of chalcogenide perovskite research, and we identify means to stabilize the electronic properties.
Van Sambeek, Jack [Massachusetts Institute of Tech↗
Theory of anisotropic elastoresistivity of two-dimensional extremely strongly correlated metals
There is considerable recent interest in the phenomenon of anisotropic electroresistivity of correlated metals. Although some interesting work has been done on the iron-based superconducting systems, not much is known for the cuprate materials. Here we study the anisotropy of elastoresistivity for cuprates in the normal state. We introduce theoretical results for the effect of strain on resistivity and additionally on the optical weight and local density of states. We use the recently developed extremely strongly correlated Fermi liquid theory in two dimensions, which accounts quantitatively for the unstrained resistivities for three families of single-layer cuprates. The strained hoppings of a tight-binding model are roughly modeled analogously to strained transition metals. The strained resistivity for a two-dimensional t-t'-J model are then obtained, using the equations developed in recent work. Our quantitative predictions for these quantities have the prospect of experimental tests in the near future, for strongly correlated materials such as the hole-doped and electron-doped high-T c materials.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Pairing properties of the $t$–$t$'–$t$"–$J$ model
We study the pairing properties of the two-dimensional t–t'–t"–J model, where t' and t" are second and third neighbor hoppings, at a doping level x ≈ 0.1. Recent studies of the t–t'–J model find strong pairing for t' > 0, associated with electron doping, but an absence of pairing for t'<0, associated with hole doping. This is in contrast to the cuprates, where the highest transition temperatures appear for hole doping. Model parametrizations for the cuprates estimate a t" comparable to t', which, in principle, might fix this discrepancy. However, we find that it does not; we observe a suppression of pairing for the hole-doped system (t' < 0,t" > 0), while for the electron-doped system (t' > 0,t" < 0) d-wave pairing is robust. As a result, extended hoppings appear to be insufficient to make the one-band t–t'–J model capable of describing the pairing in the hole-doped system.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Hole doping and electronic correlations in Cr substituted BaFe$_{2}$As$_{2}$
For a significant composition range, the suppression of the spin density wave transition temperature (T SDW ) in Cr- and Mn-substituted BaFe 2 As 2 (CrBFA and MnBFA, respectively) coincides as a function of Cr/Mn content, despite the distinct electronic effects of these substitutions. Additionally, for any Cr/Mn content superconductivity (SC) is absent and this topic is particularly less explored in the case of CrBFA. Here, in this work, we employ angle-resolved photoemission spectroscopy (ARPES) and combined density functional theory plus dynamical mean field theory (DFT+DMFT) to address the evolution of the Fermi surface (FS) and electronic correlations in CrBFA. Our findings reveal that incorporating Cr leads to an effective hole doping of the states near the FS, which is well described within the virtual crystal approximation (VCA). Moreover, analysis of the ARPES spectra of the bands with main d yz -orbital character reveals a fractional scaling of the imaginary part of self-energy as a function of the binding energy, a signature property of Hund's correlations. Our DFT+DMFT calculations support these experimental findings. We conclude that CrBFA is a correlated electron system for which the changes in the FS as a function of Cr are unrelated to the suppression of T SDW . In addition, we suggest that the absence of SC is primarily due to the competition between Cr local moments and the Fe-derived itinerant spin fluctuations.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Orbital-selective metal skin induced by alkali-metal-dosing Mott-insulating Ca2RuO4
Abstract Doped Mott insulators are the starting point for interesting physics such as high temperature superconductivity and quantum spin liquids. For multi-band Mott insulators, orbital selective ground states have been envisioned. However, orbital selective metals and Mott insulators have been difficult to realize experimentally. Here we demonstrate by photoemission spectroscopy how Ca 2 RuO 4 , upon alkali-metal surface doping, develops a single-band metal skin. Our dynamical mean field theory calculations reveal that homogeneous electron doping of Ca 2 RuO 4 results in a multi-band metal. All together, our results provide evidence for an orbital-selective Mott insulator breakdown, which is unachievable via simple electron doping. Supported by a cluster model and cluster perturbation theory calculations, we demonstrate a type of skin metal-insulator transition induced by surface dopants that orbital-selectively hybridize with the bulk Mott state and in turn produce coherent in-gap states.
Physics↗
Competing magnetic fluctuations and orders in a multiorbital model of doped SrCo 2 As 2
We revisit the intriguing magnetic behavior of the paradigmatic itinerant frustrated magnet SrCo 2 As 2 , which shows strong and competing magnetic fluctuations yet does not develop long-range magnetic order. By calculating the static spin susceptibility Χ(q) within a realistic 16-orbital Hubbard-Hund model, we determine the leading instability to be ferromagnetic (FM). We then explore the effect of doping and calculate the critical Hubbard interaction strength U c that is required for the development of magnetic order. We find that U c decreases under electron doping and with increasing Hund's coupling J, but increases rapidly under hole doping. This suggests that magnetic order could possibly emerge under electron doping but not under hole doping, which agrees with experimental findings. We map out the leading magnetic instability as a function of doping and Hund's coupling and find several antiferromagnetic phases in addition to FM. We also quantify the degree of itinerant frustration in the model and resolve the contributions of different orbitals to the magnetic susceptibility. Lastly, we discuss the dynamic spin susceptibility Χ(q,ω) at finite frequencies, where we recover the anisotropy of the peaks at Q π = (π,0) and (0,π) observed by inelastic neutron scattering that is associated with the phenomenon of itinerant magnetic frustration. By comparing results between theory and experiment, we conclude that the essential experimental features of doped SrCo 2 As 2 are well captured by an itinerant Hubbard-Hund multiorbital model if one considers a small shift of the chemical potential towards hole doping.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Electronic Tuning in URu2Si2 Through Ru to Pt Chemical Substitution
Studies that control the unit cell volume and electronic composition have been useful in revealing what factors lead to hidden order and superconductivity in the strongly correlated electron system URu 2 Si 2 . For example, isoelectronic tuning that increases the hybridization between the f and conduction electron states (i.e., applied pressure and Ru → Fe/Os chemical substitution) 1) converts hidden order into antiferromagnetism and 2) destroys the superconductivity. The impact of nonisoelectronic chemical substitution has been less clear, but several unifying trends have recently emerged for chemical substitution vectors that qualitatively add electrons (e.g., Ru → Rh/Ir and Si → P). This includes 1) the rapid destruction of hidden order and superconductivity, 2) composition regions where the underlying Kondo lattice is preserved but does not harbor an ordered state, and 3) the emergence of complex magnetism at large substitutions. In order to assess the limits of this perspective, we have investigated the series U(Ru 1− x Pt x ) 2 Si 2 for x ≲ 0.19, where the Ru and Pt d -shells differ substantially from each other. Magnetic susceptibility, electrical resistivity, and heat capacity measurements unexpectedly reveal a phase diagram with notable similarities to those of other electron doping series. This result reinforces the viewpoint that there is a quasi-universal affect that results from electron doping in this material, and we anticipate that an understanding of these trends will be useful to isolate what factors are foundational for hidden order and superconductivity.
36 MATERIALS SCIENCE↗
Emergent Superconductivity and Competing Charge Orders in Hole-Doped Square-Lattice t – J Model
The square-lattice Hubbard and closely related t-J models are considered as basic paradigms for understanding strong correlation effects and unconventional superconductivity (SC). Recent large-scale density matrix renormalization group simulations on the extended t-J model have identified d-wave SC on the electron-doped side (with the next-nearest-neighbor hopping t 2 > 0) but a dominant charge density wave (CDW) order on the hole-doped side (t 2 < 0), which is inconsistent with the SC of hole-doped cuprate compounds. We re-examine the ground-state phase diagram of the extended t-J model by employing the state-of-the-art density matrix renormalization group calculations with much enhanced bond dimensions, allowing more accurate determination of the ground state. On six-leg cylinders, while different CDW phases are identified on the hole-doped side for the doping range δ = 1/16 – 1/8, a SC phase emerges at a lower doping regime, with algebraically decaying pairing correlations and d-wave symmetry. On the wider eight-leg systems, the d-wave SC also emerges on the hole-doped side at the optimal 1=8 doping, demonstrating the winning of SC over CDW by increasing the system width. Furthermore, our results not only suggest a new path to SC in general t-J model through weakening the competing charge orders, but also provide a unified understanding on the SC of both hole- and electron-doped cuprate superconductors.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Impact of Cation Insertion on Semiconducting Polymer Thin Films toward Electrochemical Energy Conversion
Semiconducting polymers are being explored for electrochemical and photoelectrochemical energy transformation and storage applications. For these applications, it is critical to understand how ion insertion from the electrolyte into polymer electrodes modulates the polymer electronic structure and electron doping levels. Here, this study explores electrochemical cation insertion in the n-type conjugated redox polymer P90, composed of alternating naphthalene diimide (NDI) acceptor and bithiophene (T2) donor units, where the NDI units are functionalized with heptaethylene glycol (HEG, 90%) and 2-octyl dodecyl (OD, 10%) side chains. By combining in situ techniques (UV-vis absorption and Raman spectroscopies with electrochemistry), structural analysis using ex situ grazing-incidence wide-angle X-ray scattering (GIWAXS), and density functional theory (DFT) calculations, we reveal that dications enable negative polaron and bipolaron formation in the P90 at less reducing potentials while supporting more bipolaron formation than the monocations; moreover, larger dications with smaller hydrated radii increase the maximum P90 electron doping level. We also determine that the monocations lead to more thermodynamically stabilized polarons compared with the dications. These findings highlight the critical role of cation identity in tuning electrochemical charging, charge stabilization, and electronic structure of n-type conjugated redox polymers, providing guidance on the rational design of polymer-based (photo)electrochemical applications.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Thermal diffusivity above the Mott-Ioffe-Regel limit
We present high-resolution thermal diffusivity measurements on several near optimally doped electron- and hole-doped cuprate systems in a temperature range that passes through the Mott-Ioffe-Regel limit, above which the quasiparticle picture fails. Our primary observations are that the inverse thermal diffusivity is linear in temperature and can be fitted to $D^{-1}_Q = aT + b$. The slope a is interpreted through the Planckian relaxation time $τ ≈ ℏ/k_BT$ and a thermal diffusion velocity v B, which is close, but larger than the sound velocity. The intercept b represents a crossover diffusion constant that separates coherent from incoherent quasiparticles. These observations suggest that both phonons and electrons participate in the thermal transport, while reaching the Planckian limit for relaxation time.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Local spectroscopy of a gate-switchable moiré quantum anomalous Hall insulator
Abstract In recent years, correlated insulating states, unconventional superconductivity, and topologically non-trivial phases have all been observed in several moiré heterostructures. However, understanding of the physical mechanisms behind these phenomena is hampered by the lack of local electronic structure data. Here, we use scanning tunnelling microscopy and spectroscopy to demonstrate how the interplay between correlation, topology, and local atomic structure determines the behaviour of electron-doped twisted monolayer–bilayer graphene. Through gate- and magnetic field-dependent measurements, we observe local spectroscopic signatures indicating a quantum anomalous Hall insulating state with a total Chern number of ±2 at a doping level of three electrons per moiré unit cell. We show that the sign of the Chern number and associated magnetism can be electrostatically switched only over a limited range of twist angle and sample hetero-strain values. This results from a competition between the orbital magnetization of filled bulk bands and chiral edge states, which is sensitive to strain-induced distortions in the moiré superlattice.
36 MATERIALS SCIENCE↗
Electronic Impurity Doping of a 2D Hybrid Lead Iodide Perovskite by Bi and Sn
Not Available
14 SOLAR ENERGY↗
Designed metal-insulator transition in low-symmetry magnetic intermetallics
Compounds exhibiting half-metallic character and metal-insulator transitions draw considerable attention in condensed-matter and materials physics due to their potential use in spintronics. Here we show that specific electron doping plays a crucial role in tailoring thermodynamic, structural, electronic, and magnetic properties of materials derived from low-symmetry magnetic intermetallics, exemplified on triclinic Mn 4 Al 11 . Upon chemical doping of Al by Ge, we predict improved phase stability and adherence to a generalized “18-n rule” governing closed-shell configurations in intermetallic with narrow bandgaps. Validating experiments include measurements of phase stability and electronic transport properties of electron-doped Mn 4 Al 10 Ge that crystallizes in the Mn 4 Al 11 -type structure, confirming the bandgap opening as predicted by chemical analysis and density-functional theory. Here we also demonstrate theoretically that hydrostatic pressure enhances the predicted half-metallic gap in the up-spin channel, which leads to a ferrimagnetic-to-ferromagnetic transition driven by Mn-Mn charge ordering in the Mn 4 Al 11 parent. We have also discussed the generality of our approach in predicting the design of other classes of intermetallics including half and full Heusler compounds.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Ground-state phase diagram of the t-t ′ -J model
Significance Theoretical efforts to understand the superconducting cuprates have focused on a few simplified but challenging models: notably the Hubbard and the t - t ′ - J models. Using density matrix renormalization group (DMRG) simulations on width-8 cylinders, we study the ground-state phase diagram of the t - t ′- J model. The next nearest-neighbor hopping t ′ allows one to distinguish between hole ( t ′ < 0 ) and electron doping ( t ′ > 0 ). We find for the magnetic, charge, and single-particle properties that this model roughly captures the differences between the electron- and hole-doped cuprates. However, the superconducting properties differ. For hole doping ( t ′ < 0 ), there is an absence of superconductivity, while for electron doping ( t ′ > 0), we find d -wave superconductivity coexisting with antiferromagnetism and a secondary triplet p -wave pairing component.
Jiang, Shengtao↗
Scaling of the strange-metal scattering in unconventional superconductors
Marked evolution of properties with minute changes in the doping level is a hallmark of the complex chemistry that governs copper oxide superconductivity as manifested in the celebrated superconducting domes and quantum criticality taking place at precise compositions. The strange-metal state, in which the resistivity varies linearly with temperature, has emerged as a central feature in the normal state of copper oxide superconductors. The ubiquity of this behaviour signals an intimate link between the scattering mechanism and superconductivity. However, a clear quantitative picture of the correlation has been lacking. In this study we report the observation of precise quantitative scaling laws among the superconducting transition temperature (T c ), the linear-in-T scattering coefficient (A 1 ) and the doping level (x) in electron-doped copper oxide La 2-x Ce x CuO 4 (LCCO). High-resolution characterization of epitaxial composition-spread films, which encompass the entire overdoped range of LCCO, has enabled us to systematically map its structural and transport properties with unprecedented accuracy and with increments of Δx = 0.0015. Additionally, we have uncovered the relations T c ~ (x c - x) 0.5 ~ (A 1 $\square$ ) 0.5 , where x c is the critical doping in which superconductivity disappears and A 1 $\square$ is the coefficient of the linear resistivity per CuO 2 plane. The striking similarity of the T c versus A 1 $\square$ relation among copper oxides, iron-based and organic superconductors may be an indication of a common mechanism of the strange-metal behaviour and unconventional superconductivity in these systems.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Electrochemical Doping of Halide Perovskites by Noble Metal Interstitial Cations
Abstract Metal halide perovskites are an attractive class of semiconductors, but it has proven difficult to control their electronic doping by conventional strategies due to screening and compensation by mobile ions or ionic defects. Noble‐metal interstitials represent an under‐studied class of extrinsic defects that plausibly influence many perovskite‐based devices. In this work, doping of metal halide perovskites is studied by electrochemically formed Au + interstitial ions, combining experimental data on devices with a computational analysis of Au + interstitial defects based on density functional theory (DFT). Analysis suggests that Au + cations can be easily formed and migrate through the perovskite bulk via the same sites as iodine interstitials (I i + ). However, whereas I i + compensates n‐type doping by electron capture, the noble‐metal interstitials act as quasi‐stable n‐dopants. Experimentally, voltage‐dependent, dynamic doping by current density–time ( J–t ), electrochemical impedance, and photoluminescence measurements are characterized. These results provide deeper insight into the potential beneficial and detrimental impacts of metal electrode reactions on long‐term performance of perovskite photovoltaic and light‐emitting diodes, as well as offer an alternative doping explanation for the valence switching mechanism of halide‐perovskite‐based neuromorphic and memristive devices.
14 SOLAR ENERGY↗