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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3

Two-step spin-coating of vacancy-ordered double perovskites enables growth of thin films for electronic devices

Vacancy-ordered double perovskites (VODPs), such as Cs 2 TeX 6 (X = Cl, Br, I), are lead-free alternatives to conventional metal-halide perovskites (MHPs). One limitation of VODPs is the lack of processes to form thin films relevant for physical characterization and electronic devices. A two-step spin-coating method was developed for synthesizing high-quality films of Cs 2 TeBr 6 . Independently depositing CsBr and TeBr 4 enables high precursor concentrations and control over crystallization kinetics. By optimizing the spin-coating parameters, conversion of precursors to phase pure films was observed using structural and surface characterization methods. The growth of mixed-halide systems was investigated using alternative salts including CsCl and CsI. The formation of halide alloys was found to depend on the existence of routes to byproducts. Lastly, single carrier diodes of Cs2TeBr6 were designed following valence band characterization with photoelectron spectroscopy. Temperature-dependent space-charge-limited current measurements revealed that transport occurs by hopping and the hole mobility is 3.2 × 10 −5 cm 2 V −1 s −1 near room temperature. As a result, the insights from the 2-step procedure provide a pathway towards making semiconducting devices from VODPs.

Kuklinski, Owen [University of California, Santa B↗

The Software Element of the NASA Portable Electronic Device Radiated Emissions Investigation

NASA Langley Research Center's (LaRC) High Intensity Radiated Fields Laboratory (HIRF Lab) recently conducted a series of electromagnetic radiated emissions tests under a cooperative agreement with Delta Airlines and an interagency agreement with the FAA. The frequency spectrum environment at a commercial airport was measured on location. The environment survey provides a comprehensive picture of the complex nature of the electromagnetic environment present in those areas outside the aircraft. In addition, radiated emissions tests were conducted on portable electronic devices (PEDs) that may be brought onboard aircraft. These tests were performed in both semi-anechoic and reverberation chambers located in the HIRF Lab. The PEDs included cell phones, laptop computers, electronic toys, and family radio systems. The data generated during the tests are intended to support the research on the effect of radiated emissions from wireless devices on aircraft systems. Both tests systems relied on customized control and data reduction software to provide test and instrument control, data acquisition, a user interface, real time data reduction, and data analysis. The software executed on PC's running MS Windows 98 and 2000, and used Agilent Pro Visual Engineering Environment (VEE) development software, Common Object Model (COM) technology, and MS Excel.

Koppen, Sandra V.↗

Scalable fabrication of Chip-integrated 3D-nanostructured electronic devices via DNA-programmable assembly

DNA-based self-assembly methods have demonstrated powerful and unique capabilities to encode nanomaterial structures through the prescribed placement of inorganic and biological nanocomponents. However, the challenge of selectively growing DNA superlattices on specific locations of surfaces and their integration with conventional nanofabrication has hindered the fabrication of three-dimensional (3D) DNA-assembled functional devices. Here, we present a scalable nanofabrication technique that combines bottom-up and top-down approaches for selective growth of 3D DNA superlattices on gold microarrays. This approach allows for the fabrication of self-assembled 3D-nanostructured electronic devices. DNA strands are bound onto the gold arrays, which anchor DNA origami frames and promote ordered framework growth on the specific areas of the surface, enabling control of the lateral placement and orientation of superlattices. DNA frameworks selectively grown on the pads are subsequently templated to nanoscale silica and tin oxide (SnO x ) that follow the architecture, as confirmed by structural and chemical characterizations. The fabricated SnO x superlattices are integrated into devices that demonstrate photocurrent response.

36 MATERIALS SCIENCE↗

Corrosion Failure in Electronic Devices for Aerospace Application

Corrosion of complex electronic systems is a growing and expensive concern. New materials and technology are constantly being introduced to increase performance of devices. There are many factors that can induce a corrosive environment during the various stages of manufacturing, processing, transport, and storage of these devices. The scope of this paper was to identify potential causes for the corrosion failure of optocoupler batches being used in launch applications. Optical microscope with surface profile measurements, scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), and X-ray photoelectron spectroscopy (XPS) were used to identify and analyze the source of these failure. These studies revealed that the loss of adhesion between the electrolytic plated gold and nickel layers is the critical area that traps impurity ions into the chip allowing for blisters to form along the pins of the optocoupler.

Corrosion↗

Testing methods and techniques: Testing electrical and electronic devices: A compilation

The methods, techniques, and devices used in testing various electrical and electronic apparatus are presented. The items described range from semiconductor package leak detectors to automatic circuit analyzer and antenna simulators for system checkout. In many cases the approaches can result in considerable cost savings and improved quality control. The testing of various electronic components, assemblies, and systems; the testing of various electrical devices; and the testing of cables and connectors are explained.

Source record↗

Electronic device aspects of neural network memories

The basic issues related to the electronic implementation of the neural network model (NNM) for content addressable memories are examined. A brief introduction to the principles of the NNM is followed by an analysis of the information storage of the neural network in the form of a binary connection matrix and the recall capability of such matrix memories based on a hardware simulation study. In addition, materials and device architecture issues involved in the future realization of such networks in VLSI-compatible ultrahigh-density memories are considered. A possible space application of such devices would be in the area of large-scale information storage without mechanical devices.

Lambe, J.↗

Electrical and electronic devices and components: A compilation

Components and techniques which may be useful in the electronics industry are described. Topics discussed include transducer technology, printed-circuit technology, solid state devices, MOS transistors, Gunn device, microwave antennas, and position indicators.

Source record↗

Hermetically sealable package for hybrid solid-state electronic devices and the like

A light-weight, inexpensively fabricated, hermetically sealable, repairable package for small electronic or electromechanical units, having multiple connections, is described. A molded ring frame of polyamide-imide plastic (Torlon) is attached along one edge to a base plate formed of a highly heat conducting material, such as aluminum or copper. Bores are placed through a base plate within the area of the edge surface of ring frame which result in an attachment of the ring frame to the base plate during molding. Electrical leads are molded into the ring frame. The leads are L-shaped gold-plated copper wires imbedded within widened portions of the side wall of the ring frame. Within the plastic ring frame wall the leads are bent (typically, though not necessarily at 90 deg) so that they project into the interior volume of the ring frame for connection to the solid state devices.

Miller, Wilson N.↗

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Abstract Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga 2 O 3 . For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics.

Materials Science↗

Automatic arc welding of propulsion system tubing in close proximity to sensitive electronic devices

The planned final assembly of the Galileo spacecraft propulsion system tubing, which involves welding in close proximity to sensitive electronics, raised significant concerns about the effects of electromagnetic coupling of weld energy on CMOS and other sensitive integrated circuits. A test program was established to assess the potential of an orbital arc welder and an RF-induction brazing machine to damage sensitive electronic equipment. Test parameters were varied to assess the effectiveness of typical transient suppression practices such as grounding, bonding, and shielding. A technique was developed to calibrate the hazard levels at the victim-circuit location; this technique is described along with the results and conclusions of the test program.

Lumsden, J. M.↗