Search NASA⌕ Search

SEARCH · Search NASA

Results for “Electronic properties”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Structural and Electronic Properties of Indium-Doped n-type Cd-Se-Te Crystals

Here, we present a comprehensive investigation into the potential of n-type indium-doped cadmium selenide telluride (CST:In) as a high-performance candidate for solar cell applications, without the need for resource-intensive post-growth treatments that are required for CdTe:In. We compared undoped CST and CST:In crystals under different growth conditions, analyzing their structural and electronic properties using x-ray diffraction (XRD), electron probe microanalysis (EPMA), current-voltage (IV) and Hall effect measurements, time-resolved photoluminescence (TRPL), optical transmission, and photoluminescence (PL) mapping. The results reveal that as-grown CST:In crystals achieve nearly 100% carrier activation, yielding an electron concentration of 9.5x1018 cm -3 , mobility of 653 cm 2 /V.s and a 5 ns lifetime which approaches the radiative limit. Furthermore, comparison of PL maps from crystal growths having different cooling profiles suggests a strong effect of cooling rate on selenium segregation and cubic/hexagonal/polytype phase distribution. Slower cooling leads to a more homogeneous cubic structure with lower Se segregation, while a faster cooling rate results in increased Se segregation, and twin boundaries and stacking faults with polytypic and hexagonal character.

14 SOLAR ENERGY↗
DOE OSTI2021

Tuning the Electronic Properties of Graphane via Hydroxylation: An Ab Initio Study

The thermodynamic stability of hydroxylated graphane, that is, fully sp 3 graphene derivatives coordinated with -H and -OH groups, has been recently demonstrated by ab initio calculations. Within the density functional theory approach, we investigate the electronic property modifications of graphane by progressive hydroxylation, that is, by progressively substituting -H with -OH groups. When 50% of graphane is hydroxylated, the energy bandgap reaches its largest value of 6.68 eV. The electronic affinity of 0.8 eV for graphane can widely change in the 0.28–1.60 eV range depending on the geometric configuration. Hydroxylated graphane has two interfaces with vacuum, hence its electron affinity can be different on each interface with the formation of an intrinsic dipole perpendicular to the monolayer. We envisage the possibility of using hydroxylated graphane allotropes with tunable electronic affinity to serve as interfacial layers in 2D material-based heterojunctions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Electronic properties of corundum-like Ir 2 O 3 and Ir 2 O 3 -Ga 2 O 3 alloys

In the hexagonal, corundum-like structure, α-Ga 2 O 3 has a bandgap of ~5.1 eV, which, combined with its relatively small electron effective mass, high Baliga's figure of merit, and high breakdown field, makes it a promising candidate for power electronics. Ga 2 O 3 is easy to dope n-type, but impossible to dope p-type, impeding the realization of some electronic device designs. Developing a lattice-matched p-type material that forms a high-quality heterojunction with n-type Ga 2 O 3 would open new opportunities in electronics and perhaps optoelectronic devices. In this work, we studied Ir 2 O 3 as a candidate for that purpose. Using hybrid density functional theory calculations we predict the electronic band structure of α-Ir 2 O 3 and compare that to α-Ga 2 O 3 , and study the stability and electronic properties of α-(Ir x Ga 1–x ) 2 O 3 alloys. We discuss the band offset between the two materials and compare it with recently available experimental data. We find that the Ir d bands that compose the top of the valence band in α-Ir 2 O 3 are much higher in energy than O p bands in α-Ga 2 O 3 , possibly enabling effective p-type doping. Finally, our results provide an insight into using the Ir 2 O 3 or Ir 2 O 3 -Ga 2 O 3 alloys as p-type material lattice-matched to α-Ga 2 O 3 for the realization of p–n heterojunctions.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Periodic Trends within Actinyl(VI) Nitrates and Their Structures, Vibrational Spectra, and Electronic Properties

In this work, a series of actinyl(VI) nitrate salts of the form MAnO 2 (NO 3 ) 3 , where M = NH 4 + K + , Rb + , Cs + , and Me 4 N + and AnO 2 2+ = U, Np, Pu, and AnO 2 (NO 3 ) 2 (H 2 O) 2 ·H 2 O, and the uranyl tetranitrates M 2 UO 2 (NO 3 ) 4 have been synthesized from aqueous solution and their structures determined using single-crystal X-ray diffraction. Together, these complexes represent an isostructural series of actinide complexes among the salts crystallized with the same charge-compensating cation and have been studied using vibrational spectroscopy including Raman and Fourier-transform infrared. Periodic trends in both the structural properties of these complexes and their vibrational spectra are presented and discussed, in particular the invariant nature of the O≡An≡O asymmetric stretching frequencies observed across the actinyl series. Electronic structure calculations were performed at a variety of levels of theory to aid in the interpretation of the vibrational data and to correlate trends in the data with the underlying electronic properties of these molecules.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Isotope effects in molecular structures and electronic properties of liquid water via deep potential molecular dynamics based on the SCAN functional

Here, Feynman path-integral deep potential molecular dynamics (PI-DPMD) calculations have been employed to study both light (H 2 O) and heavy water (D 2 O) within the isothermalisobaric ensemble. In particular, the deep neural network is trained based on ab initio data obtained from the strongly constrained and appropriately normed (SCAN) exchange-correlation functional. Because of the lighter mass of hydrogen than deuteron, the properties of light water are more influenced by nuclear quantum effect than those of heavy water. Clear isotope effects are observed and analyzed in terms of hydrogen-bond structure and electronic properties of water that are closely associated with experimental observables. The molecular structures of both liquid H 2 O and D 2 O agree well with the data extracted from scattering experiments. The delicate isotope effects on radial distribution functions and angular distribution functions are well reproduced as well. Our approach demonstrates that deep neural network combined with SCAN functional based ab initio molecular dynamics provides an accurate theoretical tool for modeling water and its isotope effects.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Heterometallic Actinide‐Containing Photoresponsive Metal‐Organic Frameworks: Dynamic and Static Tuning of Electronic Properties

Abstract Acquiring fundamental knowledge of properties of actinide‐based materials is a necessary step to create new possibilities for addressing the current challenges in the nuclear energy and nuclear waste sectors. In this report, we established a photophysics–electronics correlation for actinide‐containing metal‐organic frameworks (An‐MOFs) as a function of excitation wavelength, for the first time. A stepwise approach for dynamically modulating electronic properties was applied for the first time towards actinide‐based heterometallic MOFs through integration of photochromic linkers. Optical cycling, modeling of density of states near the Fermi edge, conductivity measurements, and photoisomerization kinetics were employed to shed light on the process of tailoring optoelectronic properties of An‐MOFs. Furthermore, the first photochromic MOF‐based field‐effect transistor, in which the field‐effect response could be changed through light exposure, was constructed. As a demonstration, the change in current upon light exposure was sufficient to operate a two‐LED fail‐safe indicator circuit.

Martin, Corey R.↗
DOE OSTI2021

First-Principles Study on the Electronic Properties of PDPP-Based Conjugated Polymer via Density Functional Theory

In this study, we focus on computational predictions of the electronic and optical properties of a one-dimensional periodic model of a single chain of a diketopyrrolopyrrole (DPP)-based conjugated polymer (PDPP3T) as a function of electronic configuration changes due to charge injection. Here, we employ density functional theory (DFT) to explore the ground-state and excited-state electronic properties as well as optical properties influenced by charge injection. We utilize both the Heyd–Scuseria–Ernzerhof (HSE06) and Perdew–Burke–Ernzerhof (PBE) functionals to predict the band gap and compute the absorption spectrum. Our DFT results point out that utilizing the HSE06 functional in conjunction with momentum sampling over the Brillouin zone can appropriately predict the band gap and absorption spectrum in good agreement with experimental data. Moreover, we explore the influence of charge-carrier injection on the electronic configuration of the PDPP3T polymer. Our results indicate that the injection of charge carriers into the PDPP3T semiconducting polymer model greatly affects the electrical properties and ends in a low band gap and high mobility of charge carriers in PDPP3T polymers, offering the potential to tailor the material electronic performance for organic photovoltaic and optoelectronic device applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Heterometallic Actinide-Containing Photoresponsive Metal-Organic Frameworks: Dynamic and Static Tuning of Electronic Properties

Acquiring fundamental knowledge of properties of actinide-based materials is a necessary step to create new possibilities for addressing the current challenges in the nuclear energy and nuclear waste sectors. Here in this report, we established a photophysics–electronics correlation for actinide-containing metal-organic frameworks (An-MOFs) as a function of excitation wavelength, for the first time. A stepwise approach for dynamically modulating electronic properties was applied for the first time towards actinide-based heterometallic MOFs through integration of photochromic linkers. Optical cycling, modeling of density of states near the Fermi edge, conductivity measurements, and photoisomerization kinetics were employed to shed light on the process of tailoring optoelectronic properties of An-MOFs. Furthermore, the first photochromic MOF-based field-effect transistor, in which the field-effect response could be changed through light exposure, was constructed. As a demonstration, the change in current upon light exposure was sufficient to operate a two-LED fail-safe indicator circuit.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Effect of Ligand Chemistry on the Electronic Properties and Reactivity of Cobalt Acetate Autoxidation Catalysts

Autoxidation chemistry catalyzed by cobalt(II) acetate is an industrial pathway for converting hydrocarbons into oxygenated compounds and has promising potential applications in plastic waste deconstruction. However, the chemical properties of the Co acetate-based catalysts and their roles in the reaction mechanism are poorly understood, and as a result, attempts to redesign the autoxidation chemical process for novel applications lack clear direction. In this work, we investigate the structure and electronic properties of a series of multinuclear Co(III) compounds that have been proposed as active participants in catalytic autoxidation. Through a combination of X-ray spectroscopic measurements [Co K-edge X-ray absorption spectroscopy (XAS), extended X-ray absorption fine structure (EXAFS), Kβ X-ray emission spectroscopy (XES), and high-energy resolution fluorescence detection (HERFD) XAS] and theoretical methods, we characterize the interactions of Co with acetate and hydroxyl ligands in these compounds. Here we show that the substitution of acetate ligands with hydroxyls in these compounds causes an increase in the electron density on Co, driven by the loss of a π back-bonding interaction between Co and acetate and an increase in electron donation to Co from the hydroxyl ligands. We further classify the bonding between Co and acetate based on the orbital overlap and show that the experimental absorption and emission spectra are well-described by the resulting molecular orbitals. Finally, we predict the impacts of acetate/hydroxyl ligand exchange on autoxidation catalytic properties, showing that the reaction free energies for key Co oxidation and reduction steps are extremely sensitive to metal-ligand bonding interactions and thus have meaningful impacts on overall reactivity. The results of this study constitute an important set of design criteria for developing novel homogeneous autoxidation catalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Pressure-induced suppression of Jahn–Teller distortions and enhanced electronic properties in high-entropy oxide (Mg 0.2 Ni 0.2 Co 0.2 Zn 0.2 Cu 0.2 )O

Jahn–Teller distortions are often observed in Cu II -containing complex oxides resulting in remarkable changes of physical properties. Tuning the Jahn–Teller distortions with pressure has attracted considerable interest but is less studied in Cu II -containing high-entropy oxides (HEOs). We found that pressure can suppress the structural distortions originating from the Jahn–Teller effect of CuO 6 octahedra in the rock salt-type (Mg 0.2 Ni 0.2 Co 0.2 Zn 0.2 Cu 0.2 )O HEO and significantly modify its electronic properties. Synchrotron x-ray diffraction shows that the structural distortions arising from the Jahn–Teller effect of CuO 6 octahedra are progressively suppressed, and the distorted structure evolves into a nearly ideal form under compression. Alternating current impedance and ultraviolet-visible absorption measurements reveal a dramatic resistance drop by more than three orders of magnitude and an obvious bandgap decrease in ~0.1 eV, respectively, accompanied by the pressure-induced suppression of structural distortions. Our study presents a promising route for tuning the structural distortions and the electronic structures of Cu II -containing HEOs for optimizing materials functionalities.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Theoretical study of the crystal and electronic properties of α - RuI 3

The material α-RuCl 3 , with a two-dimensional Ru honeycomb sublattice, has attracted considerable attention because it may be a realization of the Kitaev quantum spin liquid. Recently, a new honeycomb material, α-RuCl 3 , was prepared under moderately high pressure, and it is stable under ambient conditions. However, different from α-RuCl 3 , α-RuI 3 was reported to be a paramagnetic metal without long-range magnetic order down to 0.35 K. Here, the structural and electronic properties of the quasi-two-dimensional α-RuI 3 are theoretically studied. First, based on first-principles density functional theory calculations, the ABC stacking honeycomb-layer R$\bar{3}$ (No. 148) structure is found to be the most likely stacking order for α-RuI 3 along the c axis. Furthermore, both R$\bar{3}$ and P$\bar{3}$1c are dynamically stable because no imaginary frequency modes were obtained in the phononic dispersion spectrum without Hubbard U. Moreover, the different physical behavior of α-RuI 3 compared to α-RuCl 3 can be understood naturally. The strong hybridization between Ru 4d and I 5p orbitals decreases the “effective” atomic Hubbard repulsion, leading the electrons of RuI3 to be less localized than in RuCl 3 . As a consequence, the effective electronic correlation is reduced from Cl to I, leading to the metallic nature of α-RuI 3 . Based on the DFT+U (Ueff=2 eV) plus spin-orbital coupling, we obtained a spin-orbit Mott insulating behavior for α-RuCl 3 and, with the same procedure, a metallic behavior for α-RuI 3 , in good agreement with experimental results. Furthermore, when introducing large (unrealistic) U eff =6 eV, the spin-orbit Mott gap opens in α-RuI 3 as well, supporting the physical picture we are proposing. Our results provide guidance to experimentalists and theorists working on two-dimensional transition metal tri-iodide layered materials.

2-dimensional systems↗
DOE OSTI2026

Atomic-Scale Characterization and Electronic Properties of Gold-Capped Niobium Films for Superconducting Qubits

Niobium thin films are central to superconducting qubits, but their complex native oxides contribute significantly to microwave losses. A promising mitigation strategy is to suppress oxide formation using engineered thin-film encapsulation layers. Recent experiments have shown that ∼10 nm metallic overlayers on Nb capacitor films can improve the energy relaxation time T1 of transmon qubits. Here, we present a comparative study of Au-capped Nb films fabricated in situ by molecular beam epitaxy and ex situ by sequential deposition benchmarked against bare Nb films. Using complementary structural, chemical, and spectroscopic techniques, we correlate the interface quality with superconducting electronic properties of the Au surface. Low-temperature scanning tunneling spectroscopy (STS) provides spatially resolved quasiparticle density-of-states maps. While both Au-capped Nb samples exhibit large areas with uniform, fully gapped density of states, clear differences emerge between the two interfaces. Compared to in situ Nb-Au, ex situ Nb-Au exhibits a reduced induced superconducting gap, broadened coherence peak, and localized in-gap states, consistent with a residual NbxOy layer at the interface. Supported by complementary structural and chemical analyses, these findings demonstrate that STS directly links nanoscale superconducting properties to interface preparation, highlighting the importance of controlled in situ encapsulation for minimizing dissipation and improving quantum coherence.

Makita, Junki [MIT; Temple U.] (ORCID:000000026889↗
DOE OSTI2022

The role of microstructural evolution during spark plasma sintering on the soft magnetic and electronic properties of a CoFe–Al2O3 soft magnetic composite

Abstract For transformers and inductors to meet the world’s growing demand for electrical power, more efficient soft magnetic materials with high saturation magnetic polarization and high electrical resistivity are needed. This work aimed at the development of a soft magnetic composite synthesized via spark plasma sintering with both high saturation magnetic polarization and high electrical resistivity for efficient soft magnetic cores. CoFe powder particles coated with an insulating layer of Al 2 O 3 were used as feedstock material to improve the electrical resistivity while retaining high saturation magnetic polarization. By maintaining a continuous non-magnetic Al 2 O 3 phase throughout the material, both a high saturation magnetic polarization, above 1.5 T, and high electrical resistivity, above 100 μΩ·m, were achieved. Through microstructural characterization of samples consolidated at various temperatures, the role of microstructural evolution on the magnetic and electronic properties of the composite was elucidated. Upon consolidation at relatively high temperature, the CoFe was to found plastically deform and flow into the Al 2 O 3 phase at the particle boundaries and this phenomenon was attributed to low resistivity in the composite. In contrast, at lower consolidation temperatures, perforation of the Al 2 O 3 phase was not observed and a high electrical resistivity was achieved, while maintaining a high magnetic polarization, ideal for more efficient soft magnetic materials for transformers and inductors.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Mixed-Valent Copper Chalcogenides: Tuning Structures and Electronic Properties Using Multiple Anions

A series of mixed-anion copper chalcogenides have been prepared using solid-state methods including ACu 4.2 TeS 2 (A = K, Rb, Cs), which adopt the KCu 4 S 3 structure type. The mixedanion motif has an expanded sublattice, relative to KCu 4 S 3 , that can accommodate additional Cu atoms at its interstitial sites that are unoccupied in the parent structure. The variable temperature transport shows that the materials are p-type metals with carrier densities on the order of 10 21 cm -3 and room-temperature electrical conductivity as high as 4000 S cm -1 . Band structures calculated using density functional theory corroborate the experimental data and indicate that the interstitial Cu atoms lower the carrier concentration and increase the Fermi level of the materials. The layered structure has Te and S atoms occupying unique sites within the ACu 4.2 TeS 2 structure, where relatively hard S 2- anions prefer Wyckoff positions where they can form energetically favorable acid-base interactions with hard alkali cations. The phenomenon is observed in the related K 3 Cu 8 Te 2 S 4 system, which also has a fully ordered layered structure. Here, we believe that the report provides new chemical guidelines for targeting ordered multianion structures, as well as a unique method for tuning the electronic properties of metallic chalcogenides.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Impact of the Atomic Structure at the BiVO 4 /TiO 2 Interface on the Electronic Properties and Performance of BiVO 4 /TiO 2 Photoanodes

In photoelectrochemical cells, semiconductor electrodes are usually interfaced with protection layers to extend their stability. Ideally, the protection layer should not decrease photocurrent generation. Hence, the conduction band minimum (CBM) and valence band maximum (VBM) of the protection layer should appropriately align with those of the underlying semiconductor electrode to facilitate the desired interfacial charge transfer with minimal interfacial recombination. However, predicting interfacial band alignment can be challenging, as it may vary depending on the detailed interfacial atomic structure. Investigating the effect of the atomic structure at the semiconductor/protection layer junction on the band alignment is also challenging as it requires samples with varied interfaces without altering the semiconductor and protection layers. Here, we considered TiO 2 , the most widely used material as a protection layer, interfaced with a BiVO 4 photoanode, and we fabricated two n-type BiVO 4 (010)/TiO 2 photoanodes where a thin (∼4 nm) amorphous TiO 2 layer was deposited by atomic layer deposition (ALD). While the individual BiVO 4 (010) and TiO 2 layers were identical in these two samples, we modified the interfacial atomic structure at the BiVO 4 /TiO 2 junction by changing which precursor, Ti or O, was introduced first upon deposition of TiO 2 . By experimentally and computationally investigating the differences in these two samples, we show that the band alignments between BiVO 4 and TiO 2 at the interface may not be straightforwardly predicted by the CBM and VBM of bulk BiVO 4 and TiO 2 and that interfacial atomic arrangements can have a marked impact on the electronic properties and photoelectrochemical performance of the BiVO 4 (010)/TiO 2 photoanode.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Electronic Properties of Ultra‐Wide Bandgap B x Al 1− x N Computed from First‐Principles Simulations

Abstract Ultra‐wide bandgap (UWBG) materials such as AlN and BN hold great promise for future power electronics due to their exceptional properties. They exhibit large bandgaps, high breakdown fields, high thermal conductivity, and high mechanical strengths. AlN and BN have been extensively researched, however, their alloys, B x Al 1− x N, are much less studied despite their ability to offer tunable properties by adjusting x . In this article, the electronic properties of 17 recently predicted ground states of B x Al 1− x N in the x = 0 − 1 range are predicted using first‐principles density functional theory and many‐body perturbation theory within GW approximation. All the B x Al 1− x N structures are found to be UWBG materials and have bandgaps that vary linearly from that of wurtzite‐phase ( w ) AlN (6.19 eV) to that of w ‐BN (7.47 eV). The bandstructures of B x Al 1− x N show that a direct‐to‐indirect bandgap crossover occurs near x = 0.25. Furthermore, it is found that B x Al 1− x N alloys have much larger dielectric constants than the constituent bulk materials (AlN = 9.3 ɛ 0 or BN = 7.3 ɛ 0 ), with values reaching as high as 12.1 ɛ 0 . These alloys are found to exhibit large dielectric breakdown fields in the range 9–35 MV cm −1 with a linear dependence on x . This work provides the much needed advancement in the understanding of the properties of B x Al 1− x N to aid their application in next‐generation devices.

Milne, Cody L.↗
DOE OSTI2026

Evolution of Electronic Properties of Graphene Nanoribbons with Progressive Carving: From Straight to Porous to Chevron Ribbons

Graphene nanoribbons (GNRs) are highly versatile materials due to their unique electronic, magnetic, and optical properties, which can be precisely tuned by controlling their width, edge structure, and topology. Here, we report the on-surface synthesis and characterization of a straight N = 15 armchair GNR with periodic annulene nanopores (15-pGNR). It serves as a structural link between two well-established GNRs: the pristine N = 15 armchair GNR without pores (15-AGNR) and the chevron GNR (cGNR). With the addition of the 15-pGNR reported in this study, these three GNRs form a rare experimentally accessible series of ribbons, in which the evolution of electronic properties can be tracked upon progressive carving of a basic 15-AGNR: first, by creating periodic nanopores to form 15-pGNR and then by extending the pore area and producing meandering cGNR. We have designed a molecular precursor for the 15-pGNR and grown the nanoribbons on single-crystal gold substrates by on-surface synthesis in ultra-high vacuum (UHV) conditions. The atomically precise structure of 15-pGNR was confirmed by scanning tunneling microscopy (STM) and non-contact atomic force microscopy (nc-AFM). The band gap of 15-pGNR was studied by scanning tunneling spectroscopy (STS) and dI/dV mapping, and the occupied electronic levels were investigated by angle-resolved photoemission spectroscopy (ARPES). A theoretical and experimental comparison of 15-pGNRs, 15-AGNRs, and cGNRs demonstrates that the introduction of periodic nanopores into 15-AGNR leads to a more than 2-fold increase in its band gap. In contrast, the band gaps of 15-pGNR and cGNR differ only by about 15%. Such band gap increase can be qualitatively understood to arise from two combined effects, the periodic perforation of the graphene lattice and the confinement effect induced by the GNR width.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Exploring the elastic and electronic properties of chromium molybdenum diboride alloys

We perform first-principles calculations to study the structural, mechanical, thermal, electronic, and magnetic properties of Cr 1-x Mo x B 2 for x = 0.25, 0.33, 0.50, 0.67 and 0.75. Based on structural search methods, we determine the ground-state structure for each concentration. The ternaries are either monoclinic (x = 0.25, 0.75) or trigonal (x = 0.33, 0.50, 0.67). The calculated mechanical properties reveal that the strength of Cr 1-x Mo x B 2 is maximized for x = 0.50. Cr 0.5 Mo 0.5 B 2 exhibits excellent mechanical properties (B = 298 GPa, Y = 558 GPa, G = 235 Gpa, ν = 0.19, H v =27 GPa), surpassing those of β-MoB 2 at a lower cost. All of these ternaries are hard alloys with Vickers hardness greater than 24 GPa. Chemical bonding analysis demonstrates that the strength of the new compounds is related to the alternating planar and buckled B-B layers, as well as the strong TM-B bonds. Finally, the enhanced strength of Cr 0.5 Mo 0.5 B 2 is a consequence of the high density of strong interlayer Cr-Mo metallic bonds around the Fermi level.

36 MATERIALS SCIENCE↗