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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Temperature dependence of the transient photoconductive response in stretched trans-polyacetylene films with below-gap excitation

The temperature dependence of the picosecond photocurrent with below-gap excitation (1.06 microns) has been measured for a highly oriented form of transpolyacetylene. The one-dimensional picosecond photocurrent is independent of temperature. The three-dimensional picosecond photocurrent is temperature dependent with an activation energy of 63 meV. These results demonstrate the photoproduction of nonlinear charged carriers (solitons and polarons) at energies that are below the principal interband absorption edge.

Walser, A. D.↗
NASA NTRS1988

Theory of high-field electronic transport in bulk ZnS and ZnSe

This paper theoretically investigates the nature of electronic transport and the high-energy tails of the electron distribution functions in bulk ZnSe and ZnS as a function of the applied electric field were investigated using calculations based on an ensemble Monte Carlo model. The calculations include the full details of the first two conduction bands as well as the full-order treatment of the electron-phonon scattering mechanisms. Results of high-field electronic transport calculations show that the electron energy distribution function is significanty cooler in ZnS than in ZnSe at comparable electric field strengths. The cooler distribution in ZnS is due to the much greater electron scattering rate. Consequently, it is more difficult to achieve carrier heating to comparable energies in ZnS than in ZnSe.

Brennan, Kevin↗
NASA NTRS1999

Growth of Homoepitaxial ZnO Semiconducting Films

As a high temperature semiconductor, ZnO has been used for many applications such as wave-guide, solar cells, and surface acoustic wave devices. Since the ZnO material has an energy gap of 3.3 eV at room temperature and an excitonic binding energy (60 meV) that is possible to make excitonic lasering at room temperature a recent surge of interest is to synthesize ZnO films for electro-optical devices. These applications require films with a smooth surface, good crystal quality, and low defect density. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystals are grown by the hydrothermal method. Substrates are mechanically polished and annealed in air for four hours before deposited films. The annealing temperature-dependence of ZnO substrates is studied. Films are synthesized by the off-axis reactive sputtering deposition. The films have very smooth surface with a roughness </= 5 nm on a 5 micrometers x 5 micrometers area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than the crystal substrate. The film quality is determined by measuring the film resistivity, the Hall mobility, carrier densities and the energy band gap. The properties of ZnO films grown of (0001) ZnO and (0001) sapphire substrates will be also compared and discussed in the presentation.

Zhu, Shen↗
NASA NTRS1995

Performance of Ga(0.47)In(0.53)As cells over a range of proton energies

Ga(0.47)In(0.53)As solar cells were processed by OMVPE and their characteristics determined at proton energies of 0.2, 0.5, and 3 MeV. Emphasis was on characteristics applicable to use of this cell as the low bandgap member of a monolithic, two terminal high efficiency InP/GaInAs cell. It was found that the radiation induced degradation in efficiency, I(sub SC), V(sub OC) and diffusion length increased with decreasing proton energy. When efficiency degradations were compared with InP it was observed that the present cells showed considerably more degradation over the entire energy range. Similar to InP, R(sub C), the carrier removal rate, decreased with increasing proton energy. However, numerical values for R(sub C) differed from those observed with InP. The difference is attributed to differing defect behavior between the two cell types. It was concluded that particular attention should be paid to the effects of low energy protons especially when the particle's track ends in one cell of the multibandgap device.

Weinberg, I.↗
NASA NTRS1974

Auroral particle precipitation and Birkeland currents

Correlated measurements that provide information on Birkeland (field aligned) currents are reviewed. Because of the obvious importance of field-aligned electric fields with regard to Birkeland currents, the last section of the paper is devoted to a presentation of recent data on the observations of field-aligned auroral electron fluxes and monoenergetic peaks in the spectrum. Experimental data cannot yet define the overall magnetospheric pattern of the Birkeland current system. The largest body of data regarding these currents comes from polar-orbiting satellites. These data indicate that current sheets are associated with auroral displays and that field-aligned electron fluxes on the order of 1-keV energy are significant charge carriers for the conventional current out of the atmosphere. Rocket observations verify that electrons responsible for the production of auroral forms carry a significant fraction of the current necessary to produce local magnetic effects that require Birkeland currents for their explanations.

Arnoldy, R. L.↗
NASA NTRS1980

The suprathermal electron contributions to high-latitude Birkeland currents

The paper extends the search for return current carriers to the thermal energy range for electrons, using simultaneous observations on Isis 2 by a magnetometer, retarding potential analyzer, and soft particle spectrometer. Each instrument is described along with data available. Simple magnetic models are used to illustrate how magnetic perturbations may be interpreted as currents remote from the satellite or local to it and that the choice of model cannot be uniquely established by magnetometer measurements alone.

Maier, E. J.↗
NASA NTRS1981

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗
NASA NTRS1982

Solar energy conversion using surface plasmons for broadband energy transport

A new strategy for efficient solar energy conversion based on parallel processing with surface plasmons is introduced. The approach is unique in identifying: (1) a broadband carrier with suitable range for energy transport, and (2) a technique to extract more energy from the more energetic photons, without sequential losses or unique materials for each frequency band. The aim is to overcome the fundamental losses associated with the broad solar spectrum and to achieve a higher level of spectrum splitting than has been possible in semiconductor systems.

Anderson, L. M.↗
NASA NTRS1982

Grown-in defects and defects produced by 1-Me electron irradiated in Al0.3Ga0.7As P-N junction solar cells

Studies of grown-in defects and defects produced by the one-MeV electron irradiation in Al sub 0.3 Ga sub 0.7As p-n junction solar cells fabricated by liquid phase epitaxial (LPE) technique were made for the unirradiated and one-MeV electron irradiated samples, using DLTS and C-V methods. Defect and recombination parameters such as energy level, defect density, carrier capture cross sections and lifetimes were determined for various growth, annealing, and irradiation conditions.

Li, S. S.↗
NASA NTRS1983

Effect of Liquid Droplets on Turbulence Structure in a Round Gaseous Jet

A second-order model which predicts the modulation of turbulence in jets laden with uniform size solid particles or liquid droplets is discussed. The approach followed is to start from the separate momentum and continuity equations of each phase and derive two new conservation equations. The first is for the carrier fluid's kinetic energy of turbulence and the second for the dissipation rate of that energy. Closure of the set of transport equations is achieved by modeling the turbulence correlations up to a third order. The coefficients (or constants) appearing in the modeled equations are then evaluated by comparing the predictions with LDA-measurements obtained recently in a turbulent jet laden with 200 microns solid particles. This set of constants is then used to predict the same jet flow but laden with 50 microns solid particles. The agreement with the measurement in this case is very good.

Elghobashi, S. E.↗
NASA NTRS1986

Distribution system simulator

In a series of tests performed under the Department of Energy auspices, power line carrier propagation was observed to be anomalous under certain circumstances. To investigate the cause, a distribution system simulator was constructed. The simulator was a physical simulator that accurately represented the distribution system from below power frequency to above 50 kHz. Effects such as phase-to-phase coupling and skin effect were modeled. Construction details of the simulator, and experimental results from its use are presented.

Bahrami, K. A.↗
NASA NTRS1988

The generation of proton beams in two-ribbon flares

It is shown that, in the current sheet at the top of the arcade of postflare loops in a two-ribbon solar flare, particle beams are generated by direct electric-field acceleration. The acceleration process is completely collisionless and is limited only by the gyromotion along the component of the magnetic field perpendicular to the sheet. This mechanism is similar to the particle acceleration in the geomagnetic tail. Neutral beams emanate from the sheet with almost zero pitch angle, making protons the main carriers of the beam energy. Approximately 10 to the 35th protons/sec are generated with a typical energy of 200 keV. Their energy distribution is a single power law, with an upper and lower energy cut-off. Such a population is capable of simultaneously generating the observed impulsive-phase hard X-rays and the gamma rays.

Martens, P. C. H.↗
NASA NTRS1990

Direct spectroscopy of electron and hole scattering

A new spectroscopy has been developed for the first direct probe of carrier-carrier scattering in materials. This spectroscopy provides spatial and energy resolution of the scattering process and has been used to investigate transport, scattering phenomena, and hot-carrier creation in two important metal-semiconductor systems. A theoretical treatment of this scattering spectroscopy yields excellent agreement with experimental spectra and provides direct evidence that carrier-carrier scattering is a dominant energy-loss mechanism in hot-carrier transport.

Bell, L. D.↗
NASA NTRS1995

Mixed Carrier Conduction in Modulation-doped Field Effect Transistors

The contribution of more than one carrier to the conductivity in modulation-doped field effect transistors (MODFET) affects the resultant mobility and complicates the characterization of these devices. Mixed conduction arises from the population of several subbands in the two-dimensional electron gas (2DEG), as well as the presence of a parallel path outside the 2DEG. We characterized GaAs/AlGaAs MODFET structures with both delta and continuous doping in the barrier. Based on simultaneous Hall and conductivity analysis we conclude that the parallel conduction is taking place in the AlGaAs barrier, as indicated by the carrier freezeout and activation energy. Thus, simple Hall analysis of these structures may lead to erroneous conclusions, particularly for real-life device structures. The distribution of the 2D electrons between the various confined subbands depends on the doping profile. While for a continuously doped barrier the Shubnikov-de Haas analysis shows superposition of two frequencies for concentrations below 10(exp 12) cm(exp -2), for a delta doped structure the superposition is absent even at 50% larger concentrations. This result is confirmed by self-consistent analysis, which indicates that the concentration of the second subband hardly increases.

Schacham, S. E.↗
NASA NTRS1988

Phase Length Optical Phase-Locked-Loop Sensor

The invention is a device that provides a high resolution measurement of the change in optical phase length from the device optical system source to an optical reflector. The invention consists of a optical phase locked loop that uses a laser beam as a carrier of an intensity modulated energy source. The novelty of the invention appears to lie in the overall combination of elements which provide high resolution without loss of wide dynamic range. The invention does not depend on coherent reflection from a target, and thus can measure targets that do not have special preparation or corner reflectors. The use of carrier modulation achieves high resolution without the problems of high speed pulse duration systems. Thus the invention has the advantages of simplicity, low cost, and small size without sacrificing resolution.

Heyman, Joseph S.↗
NASA NTRS1989

Solution of the hydrodynamic device model using high-order non-oscillatory shock capturing algorithms

A micron n+ - n - n+ silicon diode is simulated via the hydrodynamic model for carrier transport. The numerical algorithms employed are for the non-steady case, and a limiting process is used to reach steady state. The simulation employs shock capturing algorithms, and indeed shocks, or very rapid transition regimes, are observed in the transient case for the coupled system, consisting of the potential equation and the conservation equations describing charge, momentum, and energy transfer for the electron carriers. These algorithms, termed essentially non-oscillatory, were successfully applied in other contexts to model the flow in gas dynamics, magnetohydrodynamics, and other physical situations involving the conservation laws in fluid mechanics. The method here is first order in time, but the use of small time steps allows for good accuracy. Runge-Kutta methods allow one to achieve higher accuracy in time if desired. The spatial accuracy is of high order in regions of smoothness.

Fatemi, Emad↗
NASA NTRS1991

Solution of the hydrodynamic device model using high-order non-oscillatory shock capturing algorithms

A micron n+ - n - n+ silicon diode is simulated via the hydrodynamic model for carrier transport. The numerical algorithms employed are for the non-steady case, and a limiting process is used to reach steady state. The simulation employs shock capturing algorithms, and indeed shocks, or very rapid transition regimes, are observed in the transient case for the coupled system, consisting of the potential equation and the conservation equations describing charge, momentum, and energy transfer for the electron carriers. These algorithms, termed essentially nonoscillatory, were successfully applied in other contexts to model the flow in gas dynamics, magnetohydrodynamics, and other physical situations involving the conservation laws in fluid mechanics. The method here is first order in time, but the use of small time steps allows for good accuracy. Runge-Kutta methods allow one to achieve higher accuracy in time if desired. The spatial accuracy is of high order in regions of smoothness.

Fatemi, Emad↗