Charge storage model for variable threshold FET memory element.
FET memory element charge storage two layer model for thin film dielectrics noting charge/discharge times
Lewis, E. T.↗
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The application of an analog computer for the determination of charge centers in the gate structure of the variable threshold FET
Analog computer application for determination of charge centers in multilayer gate structure of variable threshold FET, deriving equations yielding position of internally stored charge
Lewis, E. T.↗
Development of improved pyroelectric detectors. Measurements of pyroelectric material characteristics and FET characteristics
Research was undertaken to improve the detectivity of the pyroelectric detector with the ultimate goal of operation at or near the temperature-noise limit. Two general areas of investigation were undertaken: (1) to improve responsivity through the use of new materials; and (2) to reduce noise through improved field effect transistor characteristics, and improved electroding of the pyroelectric material. FET's are being obtained from various manufacturers, evaulated, and selected units tested for evaluation of characteristics critical to their use as preamplifiers with pyroelectric detectors.
Weiner, S.↗
A Field-Effect Transistor (FET) model for ASAP
The derivation of the circuitry of a field effect transistor (FET) model, the procedure for adapting the model to automated statistical analysis program (ASAP), and the results of applying ASAP on this model are described.
Ming, L.↗
Development and fabrication of low ON resistance high current vertical VMOS power FETs
The design of a VMOS Power FET exhibiting low ON resistance, high current as well as high breakdown voltage and fast switching speeds is described. The design which is based on a 1st-order device model, features a novel polysilicon-gate structure and fieldplated groove termination to achieve high packing density and high breakdown voltage, respectively. One test chip, named VNTKI, can block 180 V at an ON resistence of 2.5 ohm. A 150 mil x 200 mil (.19 sq cm) experimental chip has demonstrated a breakdown voltage of 200v, an ON resistance of 0.12 ohm, a switching time of less than 100 ns, and a pulse drain - current of 50 A with 10 V gate drive.
Kay, S.↗
A 4-W 56-dB gain microstrip amplifier at 15 GHz utilizing GaAs FET's and IMPATT diodes
Performance results and design considerations are presented for an all solid-state Ku-band power amplifier which is feasible for use in PM communication systems for airborne or spacecraft transmitter applications. A six-stage GaAs FET preamplifier and a driver and balanced power amplifier utilizing GaAs IMPATT diodes operating in the injection locked oscillator mode are discussed. For high power and efficiency Schottky-Read IMPATT's with low-high-low doping profiles are employed. For improved reliability the IMPATT's incorporate a TiW barrier metallization to retard degradation of the IMPATT's. Results of accelerated life testing of the IMPATT devices are also presented.
Sokolov, V.↗
Flip-Chip Carrier Would Match Microwave FET Impedances
Proposed field-effect transistor consists of three cells which make up one complete FET pellet. Pellet is flip-chip mounted on carrier with source grounded gate and drain posts connected directly to impedance-matching transmission-line segments. Impedance transformers are part of mounting and contact strips.
Huang, H. C.↗
GaAs integrated digital-to-analogue convertor for control of power dual-gate FETs
The design, fabrication and performance of a TTL compatible 4-bit GaAs integrated digital-to-analog convertor with an output voltage between -2.8 V and +2.8 V are reported. This circuit has been especially designed to control the gain of power dual-gate FETs by applying a voltage on the capacitively terminated second gate.
Saunier, P.↗
30/20 GHz spacecraft GaAs FET solid state transmitter for trunking and customer-premise-service application
Sixteen 30 dB 0.5 W amplifier modules were combined to satisfy the requirement for a graceful degradation. If one module fails, the output power drops by only 0.43 dB. Also, by incorporating all the gain stages within the combiner the overall combining efficiency is maximized. A 16 way waveguide divider combiner was developed to minimize the insertion loss associated with such a large corporate feed structure. Tests showed that the 16 way insertion loss was less than 0.5 dB. To minimize loss, a direct transition from waveguide to microstrip, using a finline on duroid substrate, was developed. The FETs fabricated on MBE grown material, demonstrated superior performances. For example, a 600 micrometer device was capable of 320 mW output power with 5 dB gain and 26.6% efficiency at 21 GHz. The 16 module amplifier gave 8.95 W saturated output power with 30 dB gain. The overall efficiency was 9%. The 3 dB bandwidth was 2.5 GHz. At 17.7 GHz the amplifier had 5 W output power and at 20.2 GHz it still had 4.4 W.
Saunier, P.↗
A K-band GaAs FET amplifier with 8.2-W output power
An 8.2-W GaAs FET amplifier with 38.6 + or - 0.5-dB gain over a 17.7-19.1-GHz frequency band has been developed. This amplifier combines the outputs of eight multistage amplifier modules utilizing a radial combiner. This state-of-the art power level has been achieved with AM/PM of less than 2 deg/dB. The third-order intermodulation products at 1-dB gain compression were 20 dBc, and variation in group delay over the frequency band was less than + or - 0.25 ns. Tests show that the amplifier is unconditionally stable and follows the graceful-degradation principle.
Goel, J.↗
A new FET-bipolar combinational power semiconductor switch
A novel FET-BJT combinational transistor configuration is proposed and demonstrated using discrete devices. This new transistor features fast switching, very simple drive requirement, elimination of reverse bias second breakdown, and good utilization of semiconductor chip area. Initial results indicate that power hybrid construction of the device is essential to enhance the current rating of the device.
Chen, D. Y.↗
Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10 to the -2nd to 10 to the 8 Hz
Equivalent gate noise voltage spectra of 1-micron gate-length modulation-doped FET's with pseudomorphic InGaAs quantum-well structure have been measured for the frequency range of 0.01 Hz to 100 MHz and commpared with the noise spectra of conventional AlGaAs/GaAs MODFET's and GaAs MESFET's. The prominent generation-recombination (g-r) noise bulge commonly observed in the vicinity of 10 kHz in conventional MODFET's at 300 K does not appear in the case of the new InGaAs quantum-well MODFET. Instead, its noise spectra indicate the presence of low-intensity multiple g-r noise components superimposed on a reduced 1/f noise. The LF noise intensity in the new device appears to be the lowest among those observed in any MODFET or MESFET. The noise spectra at 82 K in the new device represent nearly true 1/f noise. This unusual low-noise behavior of the new structure suggests the effectiveness of electron confinement in the quantum well that significantaly reduces electron trapping in the n-AlGaAs, and thus eliminates the g-r noise bulge observed in conventional MODFET's.
Liu, Shih-Ming J.↗
Pseudomorphic InGaAs/AlGaAs modulation-doped FET's with reduced low-frequency noise and thermally stable performance
A high-performance MODFET structure grown by MBE with the incorporation of a single quantum well In(0.15)Ga(0.85)As layer for the transport of two-dimensional electron gas has been critically examined for its thermal stability at 80 K and low-frequency noise form 0.01 to 10 to the 8th Hz. Experimental results indicate that the behavior of this device in both these respects is much superior when compared with the same behavior of conventional MODFETs. A maximum low-field carrier mobility of 29,000 sq cm/s at 80 K and an average carrier saturation velocity of 2 x 10 to the 7th cm/s at 300 K in a 1-micron gate device clearly indicate that the quality of the pseudomorphic quantum well (InGaAs) layer is either comparable or better than that of the usual GaAs buffer layer. The deep level spectra, obtained through photo-FET measurements, and the low-frequency noise spectra at different temperatures obtained for the new pseudomorphic and conventional MODFET's have clearly indicated that contributions from various deep levels present in the new structure are significantly reduced.
Liu, Shih-Ming↗
30 GHz monolithic balanced mixers using an ion-implanted FET-compatible 3-inch GaAs wafer process technology
An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated and tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.
Bauhahn, P.↗
An electronically tuned, stable 8415-MHz dielectric resonator FET oscillator for space applications
A voltage-controlled 8415 MHz FET oscillator stabilized by a dielectric resonator is described. The oscillator provides a linear electronic tuning range of over 3.2 MHz with a flat power output equal to +1.8 dBm (27 C nominal), a single-sideband noise to carrier ratio of -68 dBc/Hz at 1 kHz off carrier, and a frequency temperature coefficient of 0.54 part per million/C over a -24 to 75 C range. The oscillator withstood 150 krads(Si) of gamma radiation with no significant performance degradation. The overall performance of the oscillator is in many ways far superior to that of an equivalent bipolar oscillator for space applications.
Lakshminarayana, M.↗
HSPICE modelling of a solar array circuit controlled by a fet switch
This paper presents a method of modeling a solar array circuit controlled by a hexfet switch on HSPICE. HSPICE models are developed for the solar array current voltage (IV) characteristic and the IRF150 hexfet. Computer simulations are made to verify rate of current change at the load. The equivalent LC circuit for the same current control is modeled to show savings in weight and power in choosing the fet switch over an LC circuit.
Cox, Deanna D.↗
Millimeter-wave generation and characterization of a GaAs FET by optical mixing
Coherent mixing of optical radiation from a tunable continuous-wave dye laser and a stabilized He-Ne laser was used to generate millimeter-wave signals in GaAs FETs attached to printed-circuit millimeter-wave antennas. The generated signal was further down-converted to a 2-GHz IF by an antenna-coupled millimeter-wave local oscillator at 62 GHz. Detailed characterizations of power and S/N under different bias conditions have been performed. This technique is expected to allow signal generation and frequency-response evaluation of millimeter-wave devices at frequencies as high as 100 GHz.
Ni, David C.↗
High-efficiency high-gain monolithic heterostructure FET amplifier at 31 GHz
A three-stage heterostructure FET monolithic amplifier has achieved a power-added efficiency of 36 percent with 200 mW output and 18 dB gain at 31 GHz. At a higher drain voltage, the output power increases to 280 mW (with 17.5 dB gain and 31 percent PAE) at a power density of 0.7 W/mm. The MMIC chip measures 2.63 x 1.35 sq mm and requires only a single drain bias and a single gate bias.
Tserng, H. Q.↗