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47 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Acceptor dopant mediated electrical property modification in Bi0.5Na0.5TiO3-based piezoceramic

The effect of Mn and Fe dopants on the electromechanical and electrochemical properties of 0.88[Bi 0.5 Na 0.5 ]TiO 3 –0.08[Bi 0.5 K 0.5 ]TiO 3 –0.04[Bi 0.5 Li 0.5 ]TiO 3 piezoceramic is investigated with particular emphasis on complex impedance in the temperature range from 450 to 600 °C. The impedance spectra have been simulated with equivalent circuits in order to extract bulk and grain boundary characteristics and to determine activation energies of conduction. Mn and Fe dopants considerably enhance the mechanical quality factor and decrease the dielectric loss compared to the undoped composition. Mn doping leads to dramatically higher resistivity in the bulk and a modest increase in the bulk activation energy. On the other hand, conductivity increases dramatically via Fe doping with a significant lowering of activation energy in the bulk and corresponding raising of the activation energy at grain boundaries in comparison to Mn-doped and undoped ceramic. The bulk conductivity of Fe-doped piezoceramic reaches as high as 0.01 S cm -1 at 600 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Enhancing the electron mobility in Si-doped (010) β-Ga 2 O 3 films with low-temperature buffer layers

We demonstrate a new substrate cleaning and buffer growth scheme in β-Ga 2 O 3 epitaxial thin films using metal–organic vapor phase epitaxy (MOVPE). For the channel structure, a low-temperature (LT, 600 °C) un-doped Ga 2 O 3 buffer was grown, followed by a transition layer to a high-temperature (HT, 810 °C) Si-doped Ga 2 O 3 channel layers without growth interruption. The (010) Ga 2 O 3 Fe-doped substrate cleaning uses solvent cleaning, followed by additional hydrofluoric acid (49% in water) treatment for 30 min before the epilayer growth. This step is shown to compensate the parasitic Si channel at the epilayer–substrate interface that originates from the substrate polishing process or contamination from the ambient. From secondary ion mass spectroscopy (SIMS) analysis, the Si peak atomic density at the substrate interface is found to be several times lower than the Fe atomic density in the substrate—indicating full compensation. The elimination of the parasitic electron channel at the epi–substrate interface was also verified by electrical (capacitance–voltage profiling) measurements. In the LT-grown (600 °C) buffer layers, it is seen that the Fe forward decay tail from the substrate is very sharp, with a decay rate of ∼9 nm/dec. X-ray off-axis rocking curve ω-scans show very narrow full width at half maximum (FWHM) values, similar to the as-received substrates. These channels show record high electron mobility in the range of 196–85 cm 2 /V⋅s in unintentionally doped and Si-doped films in the doping range of 2 × 10 16 –1 × 10 20 cm −3 . Si delta-doped channels were also grown utilizing this substrate cleaning and the hybrid LT buffers. Record high electron Hall mobility of 110 cm 2 /V⋅s was measured for sheet charge density of 9.2 × 10 12 cm −2 . This substrate cleaning, combined with the LT buffer scheme, shows the potential of designing Si-doped β-Ga 2 O 3 channels with exceptional transport properties for high-performance Ga 2 O 3 -based electron devices.

Bhattacharyya, Arkka↗
DOE OSTI2024

Silicon implantation and annealing in β -Ga 2 O 3 : Role of ambient, temperature, and time

Optimizing thermal anneals of Si-implanted β-Ga 2 O 3 is critical for low resistance contacts and selective area doping. Here we report the impact of annealing ambient, temperature, and time on the activation of room temperature ion-implanted Si in β-Ga 2 O 3 at concentrations from 5 × 10 18 to 1 × 10 20 cm −3 , demonstrating full activation (>80% activation, mobilities >70 cm 2 /V s) with contact resistances below 0.29 Ω mm. Homoepitaxial β-Ga 2 O 3 films, grown by plasma-assisted molecular beam epitaxy on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5 × 10 18 , 5 × 10 19, and 1 × 10 20 cm −3 . Anneals were performed in an ultra-high vacuum-compatible quartz furnace at 1 bar with well-controlled gas compositions. To maintain β-Ga 2 O 3 stability, p O2 must be greater than 10 −9 bar. Anneals up to p O2 = 1 bar achieve full activation at 5 × 10 18 cm −3, while 5 × 10 19 cm −3 must be annealed with p O2 ≤ 10 −4 bar, and 1 × 10 20 cm −3 requires p O2 < 10 −6 bar. Water vapor prevents activation and must be maintained below 10 −8 bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperatures up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 min with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5 × 10 19 cm −3 and occurs rapidly at 1 × 10 20 cm −3 . Rutherford backscattering spectrometry (channeling) suggests that damage recovery is seeded from remnant aligned β-Ga 2 O 3 that remains after implantation; this conclusion is also supported by scanning transmission electron microscopy showing retention of the β-phase with inclusions that resemble the γ-phase.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Magnetic semiconductors from functionalized Cr 2 ⁢C MXenes

Here, we report an ab initio investigation of functionalized and 3⁢𝑑-electron-doped Cr 2 ⁢C MXenes. Upon functionalization, the Cr 2⁢ C becomes chemically, dynamically, and mechanically stable, and it exhibits magnetic semiconducting behavior. Cr 2 ⁢CF 2 stands out as a wide band gap semiconductor, possessing superexchange interaction mediated by F atoms within the layer; however, the applied strain transforms it from an indirect to a direct band gap semiconductor. Strong spin-phonon coupling found in Cr 2 ⁢CH 2 is supported by the distorted Cr spin density due to the hydrogen environment. Two magnon branches, associated with two sublattice spins, are found in the ferromagnetic Cr 2 ⁢CO 2 and antiferromagnetic Cr 2 ⁢CF 2 . Depending on the types of 3⁢𝑑-electron dopants and functionalization, Cr 2 ⁢C MXenes (except for Cr 2 ⁢CO 2 ) change from an indirect band gap magnetic semiconductor to different states of electronic and magnetic matter, including an exotic direct band gap magnetic bipolar semiconductor. In addition, we reveal a band inversion between the two highest valence bands in the Fe-doped Cr 2 ⁢CCl 2 .

2D materials↗
DOE OSTI2020

Competition of three-dimensional magnetic phases in Ca2Ru1-xFexO4: A structural perspective

The crystalline and magnetic structures of Ca 2 Ru 1 - x Fe x O 4 ( x = 0.02 , 0.05, 0.08, and 0.12) have been studied using neutron and x-ray diffraction. The Fe-doping reduces the Ru-O bond length in both apical and planar directions. The smaller Ru( Fe ) O 6 octahedron leads to its reduced distortion. The P b c a space group is maintained in all the Fe dopings, so is the octahedral flattening. Warming has a similar effect on the lattice to that of the Fe doping in releasing the distorted octahedra but precipitates an abrupt octahedral elongation near the N e ' el temperature. Two competing antiferromagnetic orders, A - and B -centered phases have been observed. The Fe-doping-relaxed crystal structure prefers the latter to the former. As the doping increases, the B -centered phase continuously grows at the cost of the A -centered one and eventually replaces it at x = 0.12 . The absence of the two-dimensional antiferromagnetic critical fluctuations above the magnetic transition temperature and the three-dimensional magnetic correlation below the transition, together with the anomalous lattice response, point to an important role of orbital degree of freedom in driving the magnetic phase competition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Tuning the flat bands of the kagome metal CoSn with Fe, In, or Ni doping

We report CoSn is a Pauli paramagnet with relatively flat d bands centered about 100 meV below the Fermi energy, E F . Single crystals of CoSn lightly doped with Fe, In, or Ni are investigated using x-ray and neutron scattering, magnetic susceptibility and magnetization, AC susceptibility, specific heat, and resistivity measurements. Within the rigid-band approximation, hole doping with a few percent of Fe or In should move the flat bands closer to E F , whereas electron doping with Ni should move the flat bands further away from E F . We provide evidence that this indeed occurs. Fe and In doping drive CoSn toward magnetism, while Ni doping suppresses CoSn's already weak magnetic response. The resulting ground state is different for Fe versus In doping. For Fe-doped crystals, Co 1-x Fe x Sn, with 0.02< x <0.27, the magnetic and specific-heat data are consistent with the formation of a spin glass, with a glass temperature, T g , ranging from 1 K for x = 0.02 to 10 K for x = 0.27. Powder and single-crystal neutron diffraction found no evidence of long-range magnetic order below T g for samples with x ≈ 0.17. For In-doped crystals, CoSn 1-y In y , both the magnetic susceptibility and the Sommerfeld coefficient, γ, increase substantially relative to pure CoSn, but with no clear indication of a magnetic transition for 0.05< y <0.2. CoSn crystals doped with Ni (Co 0.93 Ni 0.07 Sn) have a significantly smaller magnetic susceptibility and γ than pure CoSn, consistent with flat bands further from E F .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Interfacial magnetic characteristics of nearly compensated gadolinium iron garnet

Reports on spin Hall magnetoresistance, magnonic spin currents from thermal gradients, and spin transfertorque magnetic random-access memory using compensated ferrimagnets largely discuss bulk magnetization but lack consideration of depth profiles or interfacial characteristics. Here, magnetic and structural characterization of profiles and interfaces was performed for nearly compensated gadolinium iron garnet (GdIG) thin films. X-ray diffraction and reciprocal space maps show that sputter deposited GdIG on Si is polycrystalline with the desired cubic garnet phase, and GdIG on gadolinium gallium garnet (GGG) is epitaxial with <0.06% compressive strain. Temperature-dependent magnetometry confirms the compensation temperatures of GGG/GdIG and Si/GdIG to be 285 and 260 K, respectively, both near room temperature. Interestingly, these measurements suggest the presence of unsaturated rare-earth moments, which result in a characteristic hysteresis between heating and cooling sequences in the magnetization-temperature curves at zero field. Depth-profile measurements from polarized neutron reflectometry (PNR) indicate up to 91% volume fraction in GdIG on Si. At the interface, PNR reveals a region containing magnetized Fe-doped GGG, a low-density GdIG at the GGG/GdIG interface, and a thin magnetically dead layer at the Si/GdIG interface. Cross-sectional transmission electron microscopy and energy dispersive x-ray spectroscopy confirm the assessment of PNR. In conclusion, the magnetic characteristics of interfacial regions are attributed to intermixing of Fe-Ga at the GGG/GdIG interface and the presence of amorphous Fe-Si at the Si/GdIG interface.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Co-Free Cathode Materials and Their Novel Architectures

To enable cobalt-free LiNi 0.5 Mn 1.5 O 4 (LNMO) electrode and novel electrolyte formulation for use in next-generation Li-ion batteries (LIB) capable of high energy density, long cycle life and low cost, several methods were developed throughout this project. To enhance the performance of LNMO, Fe-doping on LNMO, laser treatment and atomic layer deposition (ALD) were adopted. Moreover, dry electrode method has successfully helped to fabricate ultra-high loading LNMO with stable performance. The improvement at anode side includes ALD-coating as well as pre-lithiation of graphite anode. In the novel electrolyte development, it was found that all-fluorinated electrolyte with appropriate additives can effectively extend both cycle and calendar life of LNMO full cells at practical loadings. Additional diagnosis of LNMO full cells showed that different types of carbon and porosity of separator play a critical role in the success of LNMO’s high voltage operation. The combined effort throughout the project pushed forward the understanding and commercialization of LNMO at practical level.

25 ENERGY STORAGE↗
DOE OSTI2020

Single-Atom Nanozymes Linked Immunosorbent Assay for Sensitive Detection of A β 1-40: A Biomarker of Alzheimer’s Disease

Single-atom nanozymes (SANs) possess unique features of maximum atomic utilization and present highly assembled enzyme-like structure and remarkable enzyme-like activity. By introducing SANs into immunoassay, limitations of ELISA such as low stability of horseradish peroxidase (HRP) can be well addressed, thereby improving the performance of the immunoassays. In this work, we have developed novel Fe-N-C single-atom nanozymes (Fe-N x SANs) derived from Fe-doped polypyrrole (PPy) nanotube and substituted the enzymes in ELISA kit for enhancing the detection sensitivity of amyloid beta 1-40. Results indicate that the Fe-N x SANs contain high density of single-atom active sites and comparable enzyme-like properties as HRP, owing to the maximized utilization of Fe atoms and their abundant active sites, which could mimic natural metalloproteases structures. Further designed SAN-linked immunosorbent assay (SAN-LISA) demonstrates the ultralow limit of detection (LOD) of 0.88 pg/mL, much more sensitive than that of commercial ELISA (9.98 pg/mL). The results confirm that the Fe-N x SANs can serve as a satisfactory replacement of enzyme labels, which show great potential as an ultrasensitive colorimetric immunoassay.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2024

Moderate active Fe 3+ doping enables improved cationic and anionic redox reactions for wide-voltage-range sodium storage

Layered metal oxides are promising cathode materials for sodium-ion batteries (SIBs) due to their high theoretical specific capacity and wide Na + diffusion channels. However, the irreversible phase transitions and cationic/anionic redoxes cause fast capacity decay. Herein, P2-type Na 0.67 Mg 0.1 Mn 0.8 Fe 0.1 O 2 (NMMF-1) cathode material with moderate active Fe 3+ doping has been designed for sodium storage. Uneven Mn 3+ /Mn 4+ distribution is observed in NMMF-1 and the introduction of Fe 3+ is beneficial for reducing the Mn 3+ contents both at the surface and in the bulk to alleviate the Jahn–Teller effect. The moderate Fe 3+ /Fe 4+ redox can realize the best tradeoff between capacity and cyclability. Therefore, the NMMF-1 demonstrates a high capacity (174.7 mAh g -1 at 20 mA g -1 ) and improved cyclability (78.5% over 100 cycles) in a wide-voltage range of 1.5–4.5 V (vs. Na + /Na). In-situ X-ray diffraction reveals a complete solid-solution reaction with a small volume change of 1.7% during charge/discharge processes and the charge compensation is disclosed in detail. This study will provide new insights into designing high-capacity and stable layered oxide cathode materials for SIBs.

25 ENERGY STORAGE↗
DOE OSTI2024

Evaluation of Fe-βGa 2 O 3 for Photoconductive Semiconductor Switching

We present iron-doped beta gallium oxide (Fe- β Ga2O3) as a candidate for photoconductive semiconductor switches (PCSSs) with sub-bandgap light. From a commercially available Fe- β Ga2O3 wafer, we first did material characterization. This included measurements of absorption coefficient and dopant composition, carrier activation energy up to 200 °C, break down field of planar electrodes (limited from material passivation), and free carrier recombination lifetime, and thermal effects up to 203 °C on photocurrent with a 447 nm light emitting diode (LED) source. Here, we then demonstrated pulsed operation of a Fe- β Ga2O3 PCSS under different sub-bandgap wavelengths (355, 532, and 1064 nm) and sub-ns pulses. Fe- β Ga2O3 is a candidate for high temperature PCSS with 355 nm responsivity of 7×10 -7 A-cm/W-kV at room temperature and up to 5.5×10 -4 A-cm/W-kV at 200 °C. From these investigations, we discuss a simple trap model to describe the illumination process of the PCSS. Fe- β Ga2O3 has a high breakdown field and has moderate responsivity characteristics, but the dark current at high temperature leads to low photo-to-dark current ratio (PDCR). Regardless, we verify its potential as a PCSS material for harsh environment applications.

42 ENGINEERING↗