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NASA NTRS1993

Superconductivity devices: Commercial use of space

The processing and screen printing of the superconducting BSCCO and 123 YBCO materials on substrates is described. The resulting superconducting properties and the use of these materials as possible electrode materials for ferroelectrics at 77 K are evaluated. Also, work performed in the development of solid-state electromechanical actuators is reported. Specific details include the fabrication and processing of high strain PBZT and PLZT electrostrictive materials, the development of PSZT and PMN-based ceramics, and the testing and evaluation of these electrostrictive materials. Finally, the results of studies on a new processing technology for preparing piezoelectric and electrostrictive ceramic materials are summarized. The process involves a high temperature chemical reduction which leads to an internal pre-stressing of the oxide wafer. These reduced and internally biased oxide wafers (RAINBOW) can produce bending-mode actuator devices which possess a factor of ten more displacement and load bearing capacity than present-day benders.

Haertling, Gene↗

NASA NTRS2003

Non-destructive evaluation method employing dielectric electrostatic ultrasonic transducers

An acoustic nonlinearity parameter (.beta.) measurement method and system for Non-Destructive Evaluation (NDE) of materials and structural members novelly employs a loosely mounted dielectric electrostatic ultrasonic transducer (DEUT) to receive and convert ultrasonic energy into an electrical signal which can be analyzed to determine the .beta. of the test material. The dielectric material is ferroelectric with a high dielectric constant .di-elect cons.. A computer-controlled measurement system coupled to the DEUT contains an excitation signal generator section and a measurement and analysis section. As a result, the DEUT measures the absolute particle displacement amplitudes in test material, leading to derivation of the nonlinearity parameter (.beta.) without the costly, low field reliability methods of the prior art.

Yost, William T.↗

NASA NTRS2006

Silicon-Based Optical Modulator with Ferroelectric Layer

According to a proposal, a silicon dioxide layer in a high-speed, low-power, silicon- based electro-optical modulator would be replaced by a layer of lead zirconate titanate or other ferroelectric oxide material. The purpose of this modification is to enhance the power performance and functionality of the modulator. In its unmodified form, the particular silicon- based electro-optical modulator is of an advanced design that overcomes the speed limitation of prior silicon-based electro- optical modulators. Whereas modulation frequencies of such devices had been limited to about 20 MHz, this modulator can operate at modulation frequencies as high as 1 GHz. This modulator can be characterized as a silicon-waveguide-based metal oxide/semiconductor (MOS) capacitor phase shifter in which modulation of the index of refraction in silicon is obtained by exploiting the free-charge-carrier-plasma dispersion effect. As shown in the figure, the modulator includes an n-doped crystalline silicon slab (the silicon layer of a silicon- on-insulator wafer) and a p-doped polycrystalline silicon rib with a gate oxide layer (the aforementioned silicon dioxide layer) sandwiched between them. Under accumulation conditions, the majority charge carriers in the silicon waveguide modify the index of refraction so that a phase shift is induced in the optical mode propagating in the waveguide. The advantage of using an MOS capacitor phase shifter is that it is possible to achieve high modulation speed because there are no slow carrier-generation or -recombination processes involved in the accumulation operation. The main advantage of the proposed substitution of a ferroelectric oxide layer for the silicon dioxide layer would arise from the spontaneous polarization effect of the ferroelectric layer: This spontaneous polarization would maintain accumulation conditions in the absence of applied voltage. Consequently, once the device had been switched to a given optical state, it would remain in that state, even in the absence of applied voltage (in other words, even with power turned off). A secondary advantage is that because the ferroelectric layer would have an index of refraction larger than that of silicon dioxide, there could be some reduction of optical losses attributable to fabrication of the modulator

Sheldon, Douglas↗

NASA NTRS1972

Strain-biased PLZT input devices /page composers/ for holographic memories and optical data processing.

The features of a new class of transparent ferroelectric ceramic materials, called PLZT, are described. PLZT are shown to have very strong electrooptic properties and memory, and are switched through transparent electrodes when mechanically strained. Because of these properties, they can be used to fabricate two-dimensional page composers for coherent optical systems. Techniques for fabricating such devices are outlined along with preliminary test results. Applications in displays are shown to be also feasible.

Roberts, H. N.↗

NASA NTRS1974

Solid state electro-optic color filter and iris

The electro-optic properties of lanthanum-modified lead zirconate titanate (PLZT) ferroelectric ceramic material are evaluated when utilized as a variable density and/or spectral filter in conjunction with a television scanning system. Emphasis was placed on the development of techniques and procedures for processing the PLZT disks and for applying efficient electrode structures. A number of samples were processed using different combinations of cleaning, electrode material, and deposition process. Best overall performance resulted from the direct evaporation of gold over chrome electrodes. A ruggedized mounting holder assembly was designed, fabricated, and tested. The assembly provides electrical contacts, high voltage protection, and support for the fragile PLZT disk, and permits mounting and optical alignment of the associated polarizers. Operational measurements of a PLZT sample mounted in the holder assembly were performed in conjunction with a television camera and the associated drive circuits. The data verified achievement of the elimination of the observed white-line effect.

Source record↗

NASA NTRS2004

A Novel Metal-Ferroelectric-Semiconductor Field-Effect Transistor Memory Cell Design

The use of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor (MFSFET) in a resistive-load SRAM memory cell has been investigated A typical two-transistor resistive-load SRAM memory cell architecture is modified by replacing one of the NMOS transistors with an n-channel MFSFET. The gate of the MFSFET is connected to a polling voltage pulse instead of the other NMOS transistor drain. The polling voltage pulses are of sufficient magnitude to saturate the ferroelectric gate material and force the MFSFET into a particular logic state. The memory cell circuit is further modified by the addition of a PMOS transistor and a load resistor in order to improve the retention characteristics of the memory cell. The retention characteristics of both the "1" and "0" logic states are simulated. The simulations show that the MFSFET memory cell design can maintain both the "1" and "0" logic states for a long period of time.

Phillips, Thomas A.↗

NASA NTRS2000

Advanced Layered Composite Polylaminate Electroactive Actuator and Sensor

The present invention relates to the mounting of pre-stressed electroactive material in such a manner that large displacement actuators or sensors result. The invention comprises mounting the pre-stressed electroactive material to a support layer. This combination of a pre-stressed electroactive material and support layer may in turn be attached to a mounting surface. The pre-stressed electroactive material may be a ferroelectric, pyroelectric, piezoelectric, or magnetostrictive material. The size, stiffness, mass, and material of the support layer is selected to result in the electroactive device having dynamic response properties, environmental capability characteristics, and the required resilience optimized for a given application. The capacity to connect the support layer to a surface expands the arenas in which the prestressed electroactive device may be used. Application for which the invention may be used include actuators, sensors, or as a component in a pumps, switches, relays, pressure transducers and acoustic devices.

Fox, Robert L.↗

NASA NTRS1995

Thin Layer Composite Unimorph Ferroelectric Driver and Sensor

A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

Helbaum, Richard F.↗

NASA NTRS1997

Thin Layer Composite Unimorph Ferroelectric Driver and Sensor

A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

Hellbaum, Richard F.↗

NASA NTRS2004

Thin layer composite unimorph ferroelectric driver and sensor

Hellbaum, Richard F.↗

NASA NTRS1990

Pyroelectric detectors

The multi-agency, long-term Global Change programs, and specifically NASA's Earth Observing system, will require some new and advanced photon detector technology which must be specifically tailored for long-term stability, broad spectral range, cooling constraints, and other parameters. Whereas MCT and GaAs alloy based photovoltaic detectors and detector arrays reach most impressive results to wavelengths as long as 12 microns when cooled to below 70 K, other materials, such as ferroelectrics and pyroelectrics, appear to offer special opportunities beyond 12 microns and above 70 K. These materials have found very broad use in a wide variety of room temperature applications. Little is known about these classes of materials at sub-room temperatures and no photon detector results have been reported. From the limited information available, researchers conclude that the room temperature values of D asterisk greater than or equal to 10(exp 9) cm Hz(exp 1/2)/W may be improved by one to two orders of magnitude upon cooling to temperatures around 70 K. Improvements of up to one order of magnitude appear feasible for temperatures achievable by passive cooling. The flat detector response over a wavelength range reaching from the visible to beyond 50 microns, which is an intrinsic advantage of bolometric devices, makes for easy calibration. The fact that these materials have been developed for reduced temperature applications makes ferro- and pyroelectric materials most attractive candidates for serious exploration.

Haller, Eugene E.↗

NASA NTRS2001

A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators

A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

Roeder, Jeffrey F.↗

NASA NTRS2004

A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS

Roeder, Jeffrey F.↗

NASA NTRS2004

Tunable Optical True-Time Delay Devices Would Exploit EIT

Tunable optical true-time delay devices that would exploit electromagnetically induced transparency (EIT) have been proposed. Relative to prior true-time delay devices (for example, devices based on ferroelectric and ferromagnetic materials) and electronically controlled phase shifters, the proposed devices would offer much greater bandwidths. In a typical envisioned application, an optical pulse would be modulated with an ultra-wideband radio-frequency (RF) signal that would convey the information that one seeks to communicate, and it would be required to couple differently delayed replicas of the RF signal to the radiating elements of a phased-array antenna. One or more of the proposed devices would be used to impose the delays and/or generate the delayed replicas of the RF-modulated optical pulse. The beam radiated or received by the antenna would be steered by use of a microprocessor-based control system that would adjust operational parameters of the devices to tune the delays to the required values. EIT is a nonlinear quantum optical interference effect that enables the propagation of light through an initially opaque medium. A suitable medium must have, among other properties, three quantum states (see Figure 1): an excited state (state 3), an upper ground state (state 2), and a lower ground state (state 1). These three states must form a closed system that exhibits no decays to other states in the presence of either or both of two laser beams: (1) a probe beam having the wavelength corresponding to the photon energy equal to the energy difference between states 3 and 1; and (2) a coupling beam having the wavelength corresponding to the photon energy equal to the energy difference between states 3 and 2. The probe beam is the one that is pulsed and modulated with an RF signal.

Kulikov, Igor↗

NASA NTRS2012

Some Aspects of the Failure Mechanisms in BaTiO3-Based Multilayer Ceramic Capacitors

The objective of this presentation is to gain insight into possible failure mechanisms in BaTiO3-based ceramic capacitors that may be associated with the reliability degradation that accompanies a reduction in dielectric thickness, as reported by Intel Corporation in 2010. The volumetric efficiency (microF/cm3) of a multilayer ceramic capacitor (MLCC) has been shown to not increase limitlessly due to the grain size effect on the dielectric constant of ferroelectric ceramic BaTiO3 material. The reliability of an MLCC has been discussed with respect to its structure. The MLCCs with higher numbers of dielectric layers will pose more challenges for the reliability of dielectric material, which is the case for most base-metal-electrode (BME) capacitors. A number of MLCCs manufactured using both precious-metal-electrode (PME) and BME technology, with 25 V rating and various chip sizes and capacitances, were tested at accelerated stress levels. Most of these MLCCs had a failure behavior with two mixed failure modes: the well-known rapid dielectric wearout, and so-called 'early failures." The two failure modes can be distinguished when the testing data were presented and normalized at use-level using a 2-parameter Weibull plot. The early failures had a slope parameter of Beta >1, indicating that the early failures are not infant mortalities. Early failures are triggered due to external electrical overstress and become dominant as dielectric layer thickness decreases, accompanied by a dramatic reduction in reliability. This indicates that early failures are the main cause of the reliability degradation in MLCCs as dielectric layer thickness decreases. All of the early failures are characterized by an avalanche-like breakdown leakage current. The failures have been attributed to the extrinsic minor construction defects introduced during fabrication of the capacitors. A reliability model including dielectric thickness and extrinsic defect feature size is proposed in this presentation. The model can be used to explain the Intel-reported reliability degradation in MLCCs with respect to the reduction of dielectric thickness. It can also be used to estimate the reliability of a MLCC based on its construction and microstructure parameters such as dielectric thickness, average grain size, and number of dielectric layers. Measures for preventing early failures are also discussed in this document.

Liu, David Donhang↗

NASA NTRS2005

Ferroelectric Devices Emit Charged Particles and Radiation

Devices called solid-state ferroelectric- based sources (SSFBSs) are under development as sources of electrons, ions, ultraviolet light, and x-rays for diverse applications in characterization and processing of materials. Whereas heretofore it has been necessary to use a different device to generate each of the aforementioned species of charged particles or radiation, a single SSFBS can be configured and operated to selectively generate any of the species as needed using a single source. Relative to comparable prior sources based, variously, on field emission, thermionic emission, and gaseous discharge plasmas, SSFBSs demand less power, and are compact and lightweight. An SSFBS exploits the unique physical characteristics of a ferroelectric material in the presence of a high-frequency pulsed electric field. The basic building block of an SSFBS is a ferroelectric cathode -- a ferroelectric wafer with a solid electrode covering its rear face and a grid electrode on its front face (see figure). The application of a voltage pulse -- typically having amplitude of several kilovolts and duration of several nanoseconds -- causes dense surface plasma to form near the grid wires on the front surface.

Bar-Cohen, Yoseph↗

NASA NTRS1997

Using Superconducting Thin Films in Microwave Lines

High temperature superconductors(HTS) and microwaves devices form the ideal partnership. The application of superconductors in microwave devices, components and systems allows the reduction in size, power consumption and insertion loss. The surface resistance of high-Tc superconductors has been found to be two orders of magnitude lower than normal conducting copper materials. The reduction in size and power requirements, which together both lead to a reduction in system mass, coupled with reasonably accessible operating temperatures, suggest that HTS microwave components should find ready application in satellite communications systems. At present, multi- channeling communication networks demand filters with narrow bandwidth in order to allow the available RF frequency spectrum to be partitioned into small frequency bands, -and possible variation of dielectric constant from substrate to substrate is undesirable. Microwave multiplexers demand the fabrication of two identical filters in each channel. Thus, the filter with tuning function is preferable. Tunable filters are the critical component for phased array antennas in order to electronically steer the radiated beam. To fabricate a tunable filter that uses an electric field for operation, one would like a material that provides a large change on dielectric constant for a given electric field, yet has a relatively low tangent in order to minimize the insertion loss of the device. Ferroelectrics have been the materials of choice. Their large dielectric constant sufficiently increases the coupling between microwave resonators and its dependence on electric field provides timability. Development of technology promises to diminish tangent loss. The use of thin ferroelectric films sufficiently decreases insertion losses keeping considerable potential for applications. NASA Lewis Research Center is the one of the leading centers in investigation of superconductors/ferroelectric tunable components for microwave devices. A large number of possible microwave devices were fabricated and tested on the basis of thin film multilayer superconductor-ferroelectric structures. In major cases the systems with edge-coupling scheme were investigated. Dr. Genkin has recently focused on the new potentialities which implements the using of thin ferroelectric films in filters fabricated with end-coupled microstrip lines. Numerical modeling shows that these systems have large potential for application in tunable narrow- and wide-bandpass filters in the frequency range 10-20 GHz. The phase shifter with end-coupled resonant sections was fabricated and tested. Experimental results show large tunability, particular in low voltages. The possible optimization of this structure promises to improve the obtained result and to reach the low level of insertion losses.

Genkin, Varery↗

NASA NTRSDate not supplied

Morphological evolution and transition at nanoscale in BSTO ceramic materials

Considerable efforts have been devoted for the development of low cost ferroelectric and clean energy storage multifunctional materials. Modification in design and production of a low cost material with well proven process provides pathway for high energy density dielectric energy storage. We studied fluorine doped a commercially well-established material system barium strontium titanate with two different concentrations of dopants and studied the morphological transition and its effect on properties. It was observed that sample with higher concentration transitioned much faster into glassy state, followed by growth of fibers which turned into a self-arranged bird nest type shape. The sample with lower concentration changed slowly into glassy state and only few fibers were farmed. Dielectric was highly dependent on processing methods and shows variation with crystallinity of material, temperature and cooling conditions during processing. In the higher concentration range, we observed nano-scale interface breakdown very similar to that of solid-liquid interface breakdown during crystal growth.

dielectric↗