SEARCH · Search NASA

Results for “Ferroelectric polarization”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3

All sources NASA NTRS DOE OSTI

NASA NTRS2001

Preliminary Results of Field Emission Cathode Tests

Preliminary screening tests of field emission cathodes such as chemical vapor deposited (CVD) diamond, textured pyrolytic graphite, and textured copper were conducted at background pressures typical of electric thruster test facilities to assess cathode performance and stability. Very low power electric thrusters which provide tens to hundreds micronewtons of thrust may need field emission neutralizers that have a capability of tens to hundreds of microamperes. From current voltage characteristics, it was found that the CVD diamond and textured metals cathodes clearly satisfied the Fowler-Nordheim emission relation. The CVD diamond and a textured copper cathode had average current densities of 270 and 380 mA/sq cm, respectively, at the beginning-of-life. After a few hours of operation the cathode emission currents degraded by 40 to 75% at background pressures in the 10(exp -5) Pa to 10(exp -4) Pa range. The textured pyrolytic graphite had a modest current density at beginning-of-life of 84 mA/sq cm, but this cathode was the most stable of all. Extended testing of the most promising cathodes is warranted to determine if current degradation is a burn-in effect or whether it is a long-term degradation process. Preliminary experiments with ferroelectric emission cathodes, which are ceramics with spontaneous electric polarization, were conducted. Peak current densities of 30 to 120 mA/sq cm were obtained for pulse durations of about 500 ns in the 10(exp -4) Pa pressure range.

Sovey, James S.↗

NASA NTRS1993

Noninvasive Optical Probe Of Ferroelectric Films

Thin films of ferroelectric materials probed by near-field, noninvasive mapping of photoresponse from film to obtain high-spatial-resolution information on distribution of polarization domains within film. Photoresponse technique yields data on microscopic structure of electric fields in ferroelectric material, without disturbing structure.

Thakoor, Sarita↗

NASA NTRS1999

Ferroelectric and Piezoelectric Properties of Blends of Poly(Vinylidene-Trifluoroethylene) and Graft Elastomer

A piezoelectric polymeric blend system has been developed. The system contains two components: ferroelectric poly(vinylidene-trifluoroethylene) and graft elastomer. The remanent polarization, Pr, and the piezoelectric strain coefficient, d31, of the blends have been studied as a function of relative composition of the two components, temperature and frequency. Both blended copolymer and graft unit in the elastomer contribute to the total crystallinity of the blend-system, and hence to the remanent polarization and piezoelectricity. The piezoelectric strain coefficient, d31, of the blend systems shows dependence on both the remanent polarization and the mechanical stiffness, which in turn are determined by the fraction of the two components in the blends. This mechanism makes it possible for the piezoelectric strain response of the blend to be tailored by adjusting the relative composition. Although Pr of the copolymer is higher than that of the blends, the blend films containing 75 wt.% copolymer exhibit a higher d31 at room temperature, possibly due to their lower modulus. The blend films containing 50 wt.% copolymer exhibit a constant value of d31, from room temperature to 70 C.

Su, J.↗

NASA NTRS1992

Feasibility of KTa(1-x)Nb(x)O3 as a dielectric or pyroelectric microcalorimeter

We are developing a dielectric microcalorimeter for X-ray spectroscopy. We will present the results of our measurement of the dielectric permittivity, the spontaneous polarization, and the pyroelectric coefficient of the mixed-crystal quantum ferroelectric KTa(1-x)Nb(x)O3 with a doping of x = 0.012, as a function of temperature and bias voltage across the device. The effects of surface layers on the permittivity and the pyroelectric coefficient are discussed. We also show the signal results from infrared LED and alpha-particle radiation.

Pfafman, T. E.↗

NASA NTRS2006

Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate Switching Time Analysis

Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

Phillips, Thomas A.↗

NASA NTRS1983

Polarization catastrophe model of static electrification and spokes in the B-ring of Saturn

A Clausius-Mossotti polarization catastrophe is presented as the operative charging mechanism in the Saturn B-ring. A review is undertaken of the polarization effect appearing in ice at the crystallization temperature. The ice crystals in the Saturn rings are in the 68-85 K temperature range, close to the ferroelectric transition temperature. An analytical treatment of the interaction of the ice crystals with the Saturn electric discharge field indicates that once polarization is initiated, it propagates toward the direction of the initial polarization. The spokes form in the radial direction, following the radial direction of the Saturn electric field. The polarization is cancelled by free plasma in the planet shadow. The charges are freed and are observed as the Saturn electric discharge phenomena, which has a periodicity which corresponds with the superrotation of the Saturn ionosphere.

Handel, P. H.↗

NASA NTRS2009

Electro-optic imaging Fourier transform spectrometer

An Electro-Optic Imaging Fourier Transform Spectrometer (EOIFTS) for Hyperspectral Imaging is described. The EOIFTS includes an input polarizer, an output polarizer, and a plurality of birefringent phase elements. The relative orientations of the polarizers and birefringent phase elements can be changed mechanically or via a controller, using ferroelectric liquid crystals, to substantially measure the spectral Fourier components of light propagating through the EIOFTS. When achromatic switches are used as an integral part of the birefringent phase elements, the EIOFTS becomes suitable for broadband applications, with over 1 micron infrared bandwidth.

Chao, Tien-Hsin↗

NASA NTRS1996

Photonic Diagnostic Technique For Thin Photoactive Films

Photonic diagnostic technique developed for use in noninvasive, rapid evaluation of thin paraelectric/ferroelectric films. Method proves useful in basic research, on-line monitoring for quality control at any stage of fabrication, and development of novel optoelectronic systems. Used to predict imprint-prone memory cells, and to study time evolution of defects in ferroelectric memories during processing. Plays vital role in enabling high-density ferroelectric memory manufacturing. One potential application lies in use of photoresponse for nondestructive readout of polarization memory states in high-density, high-speed memory devices. In another application, extension of basic concept of method makes possible to develop specially tailored ferrocapacitor to act as programmable detector, wherein remanent polarization used to modulate photoresponse. Large arrays of such detectors useful in optoelectronic processing, computing, and communication.

Thakoor, Sarita↗

NASA NTRS1982

Photovoltaic properties of ferroelectric BaTiO3 thin films RF sputter deposited on silicon

Ferroelectric thin films of BaTiO3 have been successfully deposited on n-type silicon substrates at temperatures above 500 C by RF sputtering in an O2/Ar atmosphere. Analysis by X-ray diffraction patterns show that films deposited at room temperature are amorphous. At temperatures above 500 C, crystalline BaTiO3 films with a tetragonal structure are obtained. The polarization-electric field (P-E) hysteresis loops and a broad peak in the dielectric constant versus temperature curve at Curie point indicate that the RF sputtered BaTiO3 films are ferroelectric. An anomalous photovoltaic effect is observed in these thin films which is related to the remanent polarization of the material. The results on open-circuit and short-circuit measurements provide an important basis for a better understanding of the role of photovoltaic field, photovoltaic current, and the pyroelectric properties in photoferroelectric domain switching.

Dharmadhikari, V. S.↗

NASA NTRS1992

Modified triglycine sulphate (TGS) single crystals for pyroelectric infrared detector applications

Effects of caesium and cerium, L-alanine, and caesium plus L-alanine impurities on ferroelectric and pyroelectric properties of TGS crystals are investigated. Dielectric constant and loss, pyroelectric coefficient, spontaneous polarization, and coercive field measurements of these modified crystals, as a function of temperature, are reported. Caesium and cerium did not affect the electrical properties of TGS crystals significantly, whereas L-alanine- and, especially, Cs + L-alanine-doped TGS crystals exhibited promising improvements in pyroelectric properties, up to 48 C, as compared to pure TGS crystals.

Banan, M.↗

NASA NTRS1976

High photovoltages in ferroelectric ceramics

The short-circuit currents and photo-emfs were measured for various ceramics including barium titanate, lead metaniobate, and lead titanate. It is suggested that the emfs and currents arise from the presence of photoconductor-insulator sandwiches in the presence of space-charge-produced internal fields. Results are in agreement with the proposed theory and indicate that the ferroelectric ceramics are not only producers of high-voltage photoelectricity but a photo-battery, the polarity and magnitude of which can be switched by application of an electrical signal.

Brody, P. S.↗

NASA NTRS1993

Thin film processing of photorefractive BaTiO3

During the period covered by this report, October 11, 1991 through October 10, 1992, the research has progressed in a number of different areas. The sol-gel technique was initially studied and experimentally evaluated for depositing films of BaTiO3. The difficulties with the precursors and the poor quality of the films deposited lead to the investigation of pulsed laser deposition as an alternative approach. The development of the pulsed laser deposition technique has resulted in continuous improvements to the quality of deposited films of BaTiO3. The initial depositions of BaTiO3 resulted in amorphous films, however, as the pulsed laser deposition technique continued to evolve, films were deposited in the polycrystalline state, then the textured polycrystalline state, and most recently heteroepitaxial films have also been successfully deposited on cubic (100) oriented SrTiO3 substrates. A technique for poling samples at room temperature and in air is also undergoing development with some very preliminary but positive results. The analytical techniques, which include x-ray diffraction, ferroelectric analysis, UV-Vis spectrophotometry, scanning electron microscopy with x-ray compositional analysis, optical and polarized light microscopy, and surface profilometry have been enhanced to allow for more detailed evaluation of the samples. In the area of optical characterization, a pulsed Nd:YAG laser has been incorporated into the experimental configuration. Now data can also be acquired within various temporal domains resulting in more detailed information on the optical response of the samples and on their photorefractive sensitivity. The recent establishment of collaborative efforts with two departments at Johns Hopkins University and the Army Research Lab at Fort Belvoir has also produced preliminary results using the metallo-organic decomposition technique as an alternative method for thin film processing of BaTiO3. RF and DC sputtering is another film deposition approach that should be initiated in the near future. Other techniques for optical characterization, which may even allow for intragrannular (within single grains) investigations, are also being considered.

Schuster, Paul R.↗

NASA NTRS2005

Modeling of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate

Considerable research has been performed by several organizations in the use of the Metal- Ferroelectric-Semiconductor Field-Effect Transistors (MFSFET) in memory circuits. However, research has been limited in expanding the use of the MFSFET to other electronic circuits. This research project investigates the modeling of a NAND gate constructed from MFSFETs. The NAND gate is one of the fundamental building blocks of digital electronic circuits. The first step in forming a NAND gate is to develop an inverter circuit. The inverter circuit was modeled similar to a standard CMOS inverter. A n-channel MFSFET with positive polarization was used for the n-channel transistor, and a n-channel MFSFET with negative polarization was used for the p-channel transistor. The MFSFETs were simulated by using a previously developed current model which utilized a partitioned ferroelectric layer. The inverter voltage transfer curve was obtained over a standard input of zero to five volts. Then a 2-input NAND gate was modeled similar to the inverter circuit. Voltage transfer curves were obtained for the NAND gate for various configurations of input voltages. The resultant data shows that it is feasible to construct a NAND gate with MFSFET transistors.

Phillips, Thomas A.↗

NASA NTRS1994

Optically Addressable, Ferroelectric Memory With NDRO

For readout, memory cells addressed via on-chip semiconductor lasers. Proposed thin-film ferroelectric memory device features nonvolatile storage, optically addressable, nondestructive readout (NDRO) with fast access, and low vulnerability to damage by ionizing radiation. Polarization switched during recording and erasure, but not during readout. As result, readout would not destroy contents of memory, and operating life in specific "read-intensive" applications increased up to estimated 10 to the 16th power cycles.

Thakoor, Sarita↗

NASA NTRS1982

Piezoelectric and pyroelectric coefficients for ferroelectric crystals with polarizable molecules

Expressions for piezoelectric and pyroelectric coefficients for a crystal of polarizable point dipoles are derived. The effect of crystal structure on the local electric field acting to polarize the molecules is included via the Lorentz-factor formalism. The derived expressions for the piezo- and pyroelectric coefficients are found to contain terms dependent on derivatives of the Lorentz factors. These terms reflect the changing of molecular dipole moments in response to the changing local electric field in the strained crystal. Inclusion of this effect results in predictions of coefficients substantially different from those obtained using the Lorentz field approximation.

Purvis, C. K.↗

NASA NTRS1990

The mechanism of high-T(sub c) superconductivity due to bound hole mediators: Relationship to ferroelectricity

The mediation by bound holes creating Cooper pairing in high T(sub c) superconductors has its origin in charge transfer excitations on the multivalence cation (virtual excitions) and in bound excitions or polarizations associated with the oxygen 2p electrons. These phenomena are produced and/or enhanced by a high internal electric field which is itself created by virtue of the unique crystal structures and polyhedral building blocks of high T(sub c) materials. The polarizations which can create oxygen holes (in addition to excitions) may be due to simply the internal electric field or to polaronic and electron-deficient bond behavior. This gives rise to two energy-dependent oxygen bands near the Fermi level. The magnitude and direction of the internal electric fields were calculated for Y1Ba2Cu3O(7-delta) (1-2-3) and show strong z-direction fields at the Cu(2), O2, and O3 sites and an even stronger -z direction field at the O4 site. The field calculations also show why electrical conductivity in the 1-2-3 material is essentially in the base plane of the CuO5 pyramid (the CuO2 plane).

Vezzoli, G. C.↗

NASA NTRS2002

Simulation Model of A Ferroelectric Field Effect Transistor

An electronic simulation model has been developed of a ferroelectric field effect transistor (FFET). This model can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The model uses a previously developed algorithm that incorporates partial polarization as a basis for the design. The model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current has values matching actual FFET's, which were measured experimentally. The input and output resistance in the model is similar to that of the FFET. The model is valid for all frequencies below RF levels. A variety of different ferroelectric material characteristics can be modeled. The model can be used to design circuits using FFET'S with standard electrical simulation packages. The circuit can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The model is a drop in library that integrates seamlessly into a SPICE simulation. A comparison is made between the model and experimental data measured from an actual FFET.

MacLeod, Todd C.↗

NASA NTRSDate not supplied

TPSAS-NF1676L-34417-DND

A boron nitride nanotube (BNNT), an electrically-insulating counterpart of a carbon nanotube (CNT), is a great nanofiller candidate for ferroelectric polymeric nanocomposites due to BNNT?s exceptional properties in piezoelectricity, thermal stability, mechanical strength, and radiation shielding capability. Fast and high-yield polar crystallization of polyvinylidene fluoride (PVDF) was accomplished by incorporating BNNTs as a nucleating agent. As-fabricated BNNT-PVDF nanocomposites were characterized by Fourier-transform infrared spectroscopy (FTIR), wide-angle X-ray diffraction (XRD), and differential scanning calorimetry (DSC) to identify and quantify chain conformations. Besides, piezoelectric constants, d33 of BNNT-PVDF nanocomposites were measured and compared with that of a mechanically drawn beta phase polar PVDF. The polar transformation due to BNNT incorporation has a great advantage over conventional beta or gamma transformation methods that require (1) mechanical drawing often resulting in defects or (2) high-temperature annealing for an extended time. In addition to the fast polar crystallization, BNNTs had a role of reinforcement of the polymer matrix. The improved Young?s modulus and electromechanical coupling coefficient of BNNT-PVDF nanocomposites indicated potential applications in energy harvesting under harsh environments such as large deformation, wide temperature cycles, and high radiation.

Dongwon Lee↗