Gallium-arsenide electro-optic modulators.
Electro-optic modulators for IR region 0.9 to 16 microns constructed by using large single crystals of high resistivity gallium arsenide
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Diffusion of zinc in gallium arsenide under excess arsenic pressure.
Arsenic pressure effect on zinc diffusion in gallium arsenide, noting ternary phase diagrams
Allen, J. W.↗
Current controlled negative resistance in n-type gallium arsenide.
Negative differential resistance effect producing relaxation type oscillations in n-type gallium arsenide
Hughes, W. E.↗
An on-board spacecraft optical data processing system using paraboloidal mirror segments and a gallium arsenide laser
Onboard spacecraft optical data processing system using paraboloidal mirror segments and gallium arsenide laser
Abidi, A. S. H.↗
The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide
The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.
Littlejohn, M. A.↗
Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation
Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.
Anspaugh, B. E.↗
Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation
Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.
Anspaugh, B. E.↗
Improved performance design of gallium arsenide solar cells for space
An improved design, shallow junction heteroface, n-p, gallium arsenide solar cell for space applications is reported, with a predicted AM0 efficiency in the 21.9 to 23.0 percent range. The optimized n-p structure, while slightly more efficient, has the added advantage of being less susceptible to radiation-induced degradation by virtue of this thin top junction layer. Detailed spectral response curves and an analysis of the loss mechanisms are reported. The details of the design are readily measurable. The optimized designs were reached by quantifying the dominant loss mechanisms and then minimizing them by using computer simulations.
Parekh, R. H.↗
High altitude calibration of thirty-three silicon and gallium arsenide solar cells on a sounding rocket
Twenty-nine n/p silicon and four p/n gallium arsenide solar cells were calibrated on board a high-altitude sounding rocket which provided a stable platform outside the earth's atmosphere. Approximately 75 characteristic current-voltage curves were obtained for each of thirty-two of the cells; the calibration accuracy for both current and voltage was 0.1%. For comparison, the short circuit current, open circuit voltage, and maximum power of the solar cells were also measured under solar simulators (air mass = 0) and on the ground (air mass = 1.2).
Thomas, N. L.↗
Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region
A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.
Source record↗
An Indium Gallium Arsenide Visible/SWIR Focal Plane Array for Low Light Level Imaging
PIN photodiodes fabricated from indium gallium arsenide lattice-matched to indium phosphide substrates (In(.53)Ga(.47)As/InP) exhibit low reverse saturation current densities (JD < 10(exp -8) A/sq cm), and high shunt resistance-area products (RoA > 10(exp 6) omega-sq cm) at T=290K. Backside-illuminated, hybrid-integrated InGaAs FPAs are sensitive from 0.9 micrometers to 1.7 micrometers. 290K detectivities, D(*), greater than 10(exp 14) cm-(square root of Hz/W) are demonstrated. This represents the highest room temperature detectivity of any infrared material. The long wavelength cutoff (1.7 micrometers) makes In(.53)Ga(.47)As an idea match to the available airglow that has major peaks at 1.3 micrometers and 1.6 micrometers. The short wavelength 'cut-on' at 0.9 micrometers is due to absorption in the InP substrate. We will report on new InGaAs FPA epitaxial structures and processing techniques. These have resulted in improved performance in the form of a 10 x increase in detectivity and visible response via removal of the InP substrate. The resulting device features visible and SWIR response with greater than 15% quantum efficiency at 0.5 micrometers while maintaining the long wavelength cutoff. Imaging has been demonstrated under overcast starlight/urban glow conditions with cooling provided by a single stage thermoelectric cooler. Details on the material structure and device fabrication, quantitative characterization of spectral response and detectivity, as well as examples of night vision imagery are presented.
Cohen, Marshall J.↗
Development of gallium arsenide solar cells
The potential of ion implantation as a means to the development of high efficiency gallium arsenide solar cells is investigated. Summaries are included of the results of computer calculations of GaAs cell characteristics, based on a model which includes the effects of surface recombination, junction space-charge region recombination, and built-in fields produced by nonuniform doping in the region; of the fabrication technology developed under the program; and of the results of electrical and optical measurements on the samples produced during the program. It was determined that measured AMO efficiencies were more than a factor of two lower than the calculated values.
Source record↗
Testing of gallium arsenide solar cells on the CRRES vehicle
A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage.
Trumble, T. M.↗
Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems
Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.
Bhasin, K. B.↗
An advanced space photovoltaic concentrator array using Fresnel lenses, gallium arsenide cells, and prismatic cell covers
The current status of a space concentrator array which uses refractive optics, gallium arsenide cells, and prismatic cell covers to achieve excellent performance at a very low array mass is documented. The prismatically covered cells have established records for space cell performance (24.2 percent efficient at 100 AM0 suns and 25 C) and terrestrial single-junction cell performance (29.3 percent efficient at 200 AM1.5 suns and 25 C).
O'Neill, Mark J.↗
Changes in minority-carrier lifetime in silicon and gallium arsenide resulting from irradiation with 22 and 40 MeV protons
Proton irradiation effects on minority carrier lifetime in silicon and gallium arsenide semiconductor materials
Beatty, M. E., III↗
A I-V analysis of irradiated Gallium Arsenide solar cells
A computer program was used to analyze the illuminated I-V characteristics of four sets of gallium arsenide (GaAs) solar cells irradiated with 1-MeV electrons and 10-MeV protons. It was concluded that junction regions (J sub r) dominate nearly all GaAs cells tested, except for irradiated Mitsubishi cells, which appear to have a different doping profile. Irradiation maintains or increases the dominance by J sub r. Proton irradiation increases J sub r more than does electron irradiation. The U.S. cells were optimized for beginning of life (BOL) and the Japanese for end of life (EOL). I-V analysis indicates ways of improving both the BOL and EOL performance of GaAs solar cells.
Heulenberg, A.↗
Analysis of costs of gallium arsenide and silicon solar arrays for space power applications
A parametric analysis was performed to compare the costs of silicon and gallium arsenide arrays for Earth orbital missions. The missions included electric power in low Earth orbit (LEO), electric power in geosynchronous Earth orbit (GEO), and power for electric propulsion of a LEO to GEO orbit transfer mission. Inputs to the analysis for all missions included launch and purchase costs of the array. For the orbit transfer mission, the launch and purchase costs of the electric propulsion system were added. Radiation flux as a function of altitude and rediation tolerance as a function of cell type were used to determine power degradation for each mission. Curves were generated that show the sensitivity of launch-array cost and total mission cost to a variety of input parameters for each mission. These parameters included mission duration, cover glass thickness, array specific cost, array specific mass, and solar cell efficiency. Solar concentration was considered and the sensitivities of cost to concentration ratio, concentrator costs, and concentrator mass were also evaluated. Results indicate that solar cell development should give a high priority to reducing array costs and that the development of low cost, lightweight, solar concentrators should be pursued.
Jefferies, K. S.↗