Search NASA⌕ Search

SEARCH · Search NASA

Results for “HF”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3

Microstructure of Neutron-Irradiated Al 3 Hf-Al Thermal Neutron Absorber Materials

A thermal neutron-absorbing metal matrix composite (MMC) comprised of Al 3 Hf particles in an aluminum matrix was developed to filter out thermal neutrons and create a fast flux environment for material testing in a mixed-spectrum nuclear reactor. Intermetallic Al 3 Hf particles capture thermal neutrons and are embedded in a highly conductive aluminum matrix that provides conductive cooling of the heat generated due to thermal neutron capture by the hafnium. These Al 3 Hf-Al MMCs were fabricated using powder metallurgy via hot pressing. The specimens were neutron-irradiated to between 1.12 and 5.38 dpa and temperatures ranging from 286 °C to 400 °C. The post-irradiation examination included microstructure characterization using transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy. This study reports the microstructural observations of four irradiated samples and one unirradiated control sample. All the samples showed the presence of oxide at the particle–matrix interface. The irradiated specimens revealed needle-like structures that extended from the surface of the Al 3 Hf particles into the Al matrix. An automated segmentation tool was implemented based on a YOLO11 computer vision-based approach to identify dislocation lines and loops in TEM images of the irradiated Al-Al 3 Hf MMCs. This work provides insight into the microstructural stability of Al 3 Hf-Al MMCs under irradiation, supporting their consideration as a novel neutron absorber that enables advanced spectral tailoring.

36 MATERIALS SCIENCE↗

Lu-Hf total-rock age for the Amitsoq gneisses, West Greenland

Lu-Hf total-rock data for the Amitsoq gneisses of West Greenland yield an age of 3.55 + or - 0.22 billion years, based on the decay constant for Lu-176 of 1.96 x 10 to the -11th/year, and an initial Hf-176/Hf-177 ratio of 0.280482 + or - 33. The result is in good agreement with Rb-Sr total-rock and U-Pb zircon ages. In spite of severe metamorphism of the area at 2.9 billion years, zircons from two of the samples have remained on the total-rock line, and define points close to the initial Hf ratio. The initial Hf-176/Hf-177 lies close to a chondritic Hf isotopic evolution curve from 4.55 billion years to present. This is consistent with the igneous precursors to the Amitsoq gneisses having been derived from the mantle at or shortly before 3.6 billion years. Anomalous relationships between Hf concentration and the Lu-176/Hf-177 ratio may suggest that trace element abundances in the Amitsoq gneisses are partly controlled by processes related to metamorphism.

Pettingill, H. S.↗

Lu-Hf and Sm-Nd evolution in lunar mare basalts

Existing cumulate remelting models for mare basalt genesis are evaluated in light of Lu-Hf, Rb-Sr, Sm-Nd data and overall REE characteristics in order to determine the simplest model that can account for these data. A data base for comparing Lu-Hf evolution in the lunar mantle as inferred from Lu-Hf analyses of oceanic basalts is presented along with a preliminary comparison of Lu-Hf and Sm-Nd evolution betwee mare basalts and terrestrial oceanic basalts. It is found that Lu/Hf characteristics of mare basalts cannot be explained in terms of modal melting of cumulate sources formed from a magma ocean with chondritic Lu/Hf. The data are consistent with a model in which the cumulate sources formed from a light REE + HF-enriched magma ocean. Nonmodal melting of ilmenite in the sources is also required. The Lu-Hf data suggest that even the high-Ti basalt sources contained no more than about 3 percent ilmenite.

Unruh, D. M.↗

Partition coefficients of Hf, Zr, and REE between phenocrysts and groundmasses

Partition coefficients of Hf, Zr, and REE between olivine, orthopyroxene, clinopyroxene, plagioclase, garnet, amphibole, ilmenite, phlogopite, and liquid are presented. Samples consist of megacrysts in kimberlite, phenocrysts in alkaline basalts, tholeiitic basalts and andesitic to dacitic rocks, and synthetic garnet and clinopyroxene in Hawaiian tholeiites. The Hf-Lu and Zr-Lu elemental fractionations are as large as the Lu-Sm or Lu-Nd fractionation. The Hf and Zr partition coefficients between mafic phenocrysts and liquids are smaller than the Lu partition coefficients, but are similar to the Nd or Sm partition coefficients. The Hf and Zr partition coefficients between ilmenite, phlogopite, and liquid are larger than the Lu partition coefficients for these minerals and their corresponding liquids. The Hf-Zr elemental fractionation does not occur except for extreme fractionation involving Zr-minerals and extremely low fO2. These data have an important bearing on chronological and petrogenetic tracer studies involving the Lu-Hf isotopic system.

Fujimaki, H.↗

Hf, Zr, and REE partition coefficients between ilmenite and liquid - Implications for lunar petrogenesis

Partition coefficients (D) between ilmenite and coexisting liquid were determined under near-lunar conditions for Hf, Zr, and REE. Through isotope dilution analysis, ilmenite D values of 0.41 and 0.33 were obtained for Hf and Zr respectively, values significantly lower than those of ilmenite from a kimberlite megacryst. Partition coefficients of REE for the synthesized ilmenite are slightly smaller than those of ilmenite from the kimberlite megacryst, and the lunar (Lu) partition coefficient is 0.056. These results suggest that ilmenite was significant in the lunar-Hf evolution of lunar mare basalts. Using lunar and Hf D values for ilmenite, the Lu-Hf evolution of lunar cumulates and the coexisting magma was examined for various crystallization sequences. The Lu-Hf variation trend of most high-Ti mare basalts is explained by a small degree of partial cumulate melting, though a higher degree is required to explain the variation of very low-Ti basalts, green glass, and Apollo 12 low-Ti basalts. Apollo 15 low-Ti basalts may require chromite crystallization as well.

Nakamura, Y.↗

An Improved Hf Vapor Etching Apparatus for Stardust Particle Extraction

Introduction: The NASA Stardust mission captured thousands of particles from the Jupiter-family comet 81P/Wild 2 in a collector composed of aluminum foil and blocks of silica aerogel [1]. To date, most Wild 2 particles available for study are relatively large and coherent particles extracted individually from the ends of hollow, carrot-shaped impact tracks produced during impact into aerogel. However, >65% of the impacting mass can be found in the ‘bulb’ of the track, including nearly all of the <1 μm size fraction [2]. This fraction contains organic-rich material and is likely to include presolar grains, representing a critical opportunity to constrain the organic and presolar inventory of primitive outer solar system materials. However, the small size and susceptibility of this fraction to melting or alteration during capture poses significant analytical challenges. Previous attempts to extract and concentrate fine-grained material from the bulb of Stardust tracks have attempted to develop techniques that efficiently destroy aerogel and leave impactor particles relatively unharmed. The low density and high porosity of silica aerogel makes it more susceptible to attack by etching with hydrofluoric acid (HF) [3] or CF4 plasma ashing [4] than collected cometary silicates. Previous studies of HF vapor etching used HF solutions varying between 5 to 49% and noted that at high concentrations and etch rates, a liquid droplet was produced according to the etching reaction 4HF + SiO2 → SiF4 (g) + 2H2O [3]. SiF4 readily decomposes into HF and silicic acid in water, which has the potential to alter the freed cometary silicates. The plasma ashing technique avoids production of a liquid droplet and minimizes damage to embedded silicates but requires specialized equipment [4]. In this abstract, we present recent improvements to the HF etching procedure with the aim of constructing an etching chamber capable of slowly etching silica aerogel using small quantities of dilute HF. The etching chamber can be assembled using readily available materials.

Stardust↗

Materials Data on Hf(MnSn)6 by Materials Project

Hf(MnSn)6 crystallizes in the hexagonal P6/mmm space group. The structure is three-dimensional. Hf is bonded to eight Sn atoms to form distorted edge-sharing HfSn8 hexagonal bipyramids. There are two shorter (2.93 Å) and six longer (3.12 Å) Hf–Sn bond lengths. Mn is bonded in a 12-coordinate geometry to six Sn atoms. There are a spread of Mn–Sn bond distances ranging from 2.71–2.79 Å. There are three inequivalent Sn sites. In the first Sn site, Sn is bonded in a 12-coordinate geometry to three equivalent Hf and six equivalent Mn atoms. In the second Sn site, Sn is bonded in a 6-coordinate geometry to six equivalent Mn atoms. In the third Sn site, Sn is bonded in a 7-coordinate geometry to one Hf and six equivalent Mn atoms.

36 MATERIALS SCIENCE↗

Materials Data on Hf(GaNi4)3 by Materials Project

Hf(Ni4Ga)3 is beta Cu3Ti-derived structured and crystallizes in the tetragonal P4/mmm space group. The structure is three-dimensional. Hf is bonded to twelve Ni atoms to form HfNi12 cuboctahedra that share corners with four equivalent HfNi12 cuboctahedra, corners with eight equivalent GaNi12 cuboctahedra, edges with twenty-four NiHf2Ga2Ni8 cuboctahedra, faces with two equivalent GaNi12 cuboctahedra, faces with four equivalent HfNi12 cuboctahedra, and faces with eight equivalent NiHf2Ga2Ni8 cuboctahedra. There are four shorter (2.57 Å) and eight longer (2.63 Å) Hf–Ni bond lengths. There are five inequivalent Ni sites. In the first Ni site, Ni is bonded in a distorted square co-planar geometry to four equivalent Hf and eight equivalent Ni atoms. All Ni–Ni bond lengths are 2.63 Å. In the second Ni site, Ni is bonded to eight Ni and four equivalent Ga atoms to form NiGa4Ni8 cuboctahedra that share corners with eight NiGa4Ni8 cuboctahedra, edges with four equivalent HfNi12 cuboctahedra, edges with four equivalent GaNi12 cuboctahedra, edges with sixteen NiHf2Ga2Ni8 cuboctahedra, faces with four equivalent GaNi12 cuboctahedra, and faces with thirteen NiGa4Ni8 cuboctahedra. There are four shorter (2.51 Å) and four longer (2.52 Å) Ni–Ni bond lengths. All Ni–Ga bond lengths are 2.57 Å. In the third Ni site, Ni is bonded to eight equivalent Ni and four equivalent Ga atoms to form NiGa4Ni8 cuboctahedra that share corners with twelve NiGa4Ni8 cuboctahedra, edges with eight equivalent GaNi12 cuboctahedra, edges with sixteen equivalent NiGa4Ni8 cuboctahedra, faces with four equivalent GaNi12 cuboctahedra, and faces with fourteen NiGa4Ni8 cuboctahedra. All Ni–Ni bond lengths are 2.52 Å. All Ni–Ga bond lengths are 2.57 Å. In the fourth Ni site, Ni is bonded to two equivalent Hf, eight Ni, and two equivalent Ga atoms to form distorted NiHf2Ga2Ni8 cuboctahedra that share corners with twelve NiHf2Ga2Ni8 cuboctahedra, edges with four equivalent HfNi12 cuboctahedra, edges with four equivalent GaNi12 cuboctahedra, edges with twelve NiGa4Ni8 cuboctahedra, faces with two equivalent HfNi12 cuboctahedra, faces with two equivalent GaNi12 cuboctahedra, and faces with twelve NiGa4Ni8 cuboctahedra. All Ni–Ni bond lengths are 2.57 Å. Both Ni–Ga bond lengths are 2.52 Å. In the fifth Ni site, Ni is bonded to eight Ni and four Ga atoms to form NiGa4Ni8 cuboctahedra that share corners with twelve NiHf2Ga2Ni8 cuboctahedra, edges with eight GaNi12 cuboctahedra, edges with sixteen NiGa4Ni8 cuboctahedra, faces with four GaNi12 cuboctahedra, and faces with fourteen NiGa4Ni8 cuboctahedra. All Ni–Ni bond lengths are 2.57 Å. There are two shorter (2.51 Å) and two longer (2.52 Å) Ni–Ga bond lengths. There are two inequivalent Ga sites. In the first Ga site, Ga is bonded to twelve Ni atoms to form GaNi12 cuboctahedra that share corners with four equivalent HfNi12 cuboctahedra, corners with eight GaNi12 cuboctahedra, edges with twenty NiHf2Ga2Ni8 cuboctahedra, a faceface with one HfNi12 cuboctahedra, faces with five GaNi12 cuboctahedra, and faces with twelve NiGa4Ni8 cuboctahedra. In the second Ga site, Ga is bonded to twelve Ni atoms to form GaNi12 cuboctahedra that share corners with twelve GaNi12 cuboctahedra, edges with twenty-four NiGa4Ni8 cuboctahedra, faces with six GaNi12 cuboctahedra, and faces with twelve NiGa4Ni8 cuboctahedra.

36 MATERIALS SCIENCE↗

Materials Data on Hf by Materials Project

Hf is Tungsten structured and crystallizes in the cubic Im-3m space group. The structure is three-dimensional. Hf is bonded in a distorted body-centered cubic geometry to eight equivalent Hf atoms. All Hf–Hf bond lengths are 3.07 Å.

36 MATERIALS SCIENCE↗

Materials Data on Hf by Materials Project

Hf is Copper structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. Hf is bonded to twelve equivalent Hf atoms to form a mixture of corner, edge, and face-sharing HfHf12 cuboctahedra. All Hf–Hf bond lengths are 3.17 Å.

36 MATERIALS SCIENCE↗

Thermomechanical Properties of Neutron Irradiated Al 3 Hf-Al Thermal Neutron Absorber Materials

A thermal neutron absorber material composed of Al 3 Hf particles in an aluminum matrix is under development for the Advanced Test Reactor. This metal matrix composite was fabricated via hot pressing of high-purity aluminum and micrometer-size Al 3 Hf powders at volume fractions of 20.0, 28.4, and 36.5%. Room temperature tensile and hardness testing of unirradiated specimens revealed a linear relationship between volume fraction and strength, while the tensile data showed a strong decrease in elongation between the 20 and 36.5% volume fraction materials. Tensile tests conducted at 200 °C on unirradiated material revealed similar trends. Evaluations were then conducted on specimens irradiated at 66 to 75 °C to four dose levels ranging from approximately 1 to 4 dpa. Tensile properties exhibited the typical increase in strength and decrease in ductility with dose that are common for metallic materials irradiated at ≤0.4T m . Hardness also increased with neutron dose. The difference in strength between the three different volume fraction materials was roughly constant as the dose increased. Nanoindentation measurements of Al 3 Hf particles in the 28.4 vol% material showed the expected trend of increased hardness with irradiation dose. Transmission electron microscopy revealed oxygen at the interface between the Al 3 Hf particles and aluminum matrix in the irradiated material. Scanning electron microscopy of the exterior surface of tensile tested specimens revealed that deformation of the material occurs via plastic deformation of the Al matrix, cracking of the Al 3 Hf particles, and to a lesser extent, tearing of the matrix away from the particles. The fracture surface of an irradiated 28.4 vol% specimen showed failure by brittle fracture in the particles and ductile tearing of the aluminum matrix with no loss of cohesion between the particles and matrix. The coefficient of thermal expansion decreased upon irradiation, with a maximum change of –6.3% for the annealed irradiated 36.5 vol% specimen.

36 MATERIALS SCIENCE↗

Cs absorption capacity and selectivity of crystalline and amorphous Hf and Zr phosphates

Removal of radioactive Cs from sodium-rich solutions is a technical challenge that goes back to post World War II nuclear waste storage and treatment; and interest in this topic was reinvigorated by the Fukushima-Daiichi nuclear power plant disaster, 10 years ago. Since the 1960's there has been considerable focus on layered Zr phosphates as robust inorganic sorbents for separation of radionuclides such as Cs. Here we present synthesis and characterization, and direct comparison of Cs sorption capacity and selectivity of four related materials: 1) crystalline α-Zr phosphate and α-Hf phosphate, and 2) amorphous analogues of these. Powder X-ray diffraction, thermogravimetry, solid-state 31P magic angle spinning nuclear magnetic resonance (MAS-NMR) spectroscopy, and compositional analysis (inductively coupled plasma optical emission spectroscopy and mass spectroscopy, ICP OES and ICP MS) provided formulae; respectively M(HPO4)2∙1H2O and M(HPO4)2∙4H2O (M = Hf, Zr) for crystalline and amorphous analogues. Maximum Cs loading, competitive Cs-Na selectivity and maximum Cs-Na loading followed by the above characterizations plus 133Cs MAS-NMR spectroscopy revealed that amorphous analogues are considerably better Cs-sorbents (based on maximum Cs-loading and selectivity over Na) than the well-studied crystalline Zr-analogue. Additionally, crystalline α-Hf phosphate is better Cs-sorbent than crystalline α-Zr phosphate. All these studies consistently show that Hf phosphate is less crystallize than Zr phosphate, when obtained under similar or identical synthesis conditions. We attribute this to lower solubility of Hf phosphate compared to Zr phosphate, preventing ‘defect healing’ during the synthesis process.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Origin of the enhanced Nb3Sn performance by combined Hf and Ta doping

Abstract In recent years there has been an increasing effort in improving the performance of Nb 3 Sn for high-field applications, in particular for the fabrication of conductors suitable for the realization of the Future Circular Collider (FCC) at CERN. This challenging task has led to the investigation of new routes to advance the high-field pinning properties, the irreversibility and the upper critical fields ( H Irr and H c2 , respectively). The effect of hafnium addition to the standard Nb-4Ta alloy has been recently demonstrated to be particularly promising and, in this paper, we investigate the origins of the observed improvements of the superconducting properties. Electron microscopy, Extended X-ray Absorption Fine Structure Spectroscopy (EXAFS) and Atom Probe Tomography (APT) characterization clearly show that, in presence of oxygen, both fine Nb 3 Sn grains and HfO 2 nanoparticles form. Although EXAFS is unable to detect significant amounts of Hf in the A15 structure, APT does indeed reveal some residual intragrain metallic Hf. To investigate the layer properties in more detail, we created a microbridge from a thin lamella extracted by Focused Ion Beam (FIB) and measured the transport properties of Ta-Hf-doped Nb 3 Sn. H c2 (0) is enhanced to 30.8 T by the introduction of Hf, ~ 1 T higher than those of only Ta-doped Nb 3 Sn, and, even more importantly the position of the pinning force maximum exceeds 6 T, against the typical ~ 4.5–4.7 T of the only Ta-doped material. These results show that the improvements generated by Hf addition can significantly enhance the high-field performance, bringing Nb 3 Sn closer to the requirements necessary for FCC realization.

36 MATERIALS SCIENCE↗

Degenerate doping in B-Ga 2 O 3 Single Crystals through Hf-doping

n-type conductivity of β-Ga 2 O 3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of β-Ga 2 O 3 single crystals using UV–vis-NIR absorption and Hall effect measurements and hybrid functional calculations. Unintentionally-doped and Hf-doped samples with a nominal concentration of 0.5at% were grown from the melt using vertical gradient freeze and Czochralski method in mixed Ar + O 2 atmosphere. We demonstrate Hf dopants, predicted to incorporate on the octahedral GaII site as a shallow donor, achieve degenerate doping in β-Ga 2 O 3 with a measured electron concentration ~2 × 10 19 cm -3 , mobility 80–65 cm 2 V -1 s -1 , and resistivity down to 5 mΩ cm in our samples. The concentration of Hf was measured to be 1.3 × 10 19 atoms cm -3 using glow discharge mass spectroscopy on doped samples, confirming Hf to be the cause of n-type conductivity (electron concentration ~2 × 10 19 cm -3 ).

36 MATERIALS SCIENCE↗

Intrinsic electric quadrupole moment of the K π = 8 - isomeric state in Hf 178

The lifetime of the 9 - state in the rotational band based on the 4.0 s, K π = 8 - , isomeric state ( 178 Hf m 1 ) from the decay of the 31-yr isomer ( 178 Hf m 2 ) was determined to be 99(2) ps by means of the fast-timing technique using two LaBr 3 (Ce) scintillators. The δ (E2/M1) mixing ratios of the ΔI = 1 γ rays depopulating levels in this band were deduced from γ-γ angular correlations by using a 178 Hf m 2 radioactive source located at the center of the Gammasphere HPGe detector array. The new results, together with previous spectroscopic information, provide a different way to extract the intrinsic quadrupole moment of Q 0 = 6.45 (14) eb for the 178 Hf m 1 band. A possible explanation for the reduction of the 178 Hf m 1 nuclear charge radius is presented.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Effect of thickness and surface composition on the stability of polarization in ferroelectric Hf x Zr 1 - x O 2 thin films

Using density functional theory, we find that tailoring the surface composition provides a route to stabilize the polar phases of the promising ferroelectric material, Hf x Zr 1-x O 2 . First, we show that for pure Hf O 2 , controlling the positively polarized surface to be relatively oxygen rich adequately screens the ferroelectric surface charges and stabilizes the polar orthorhombic phase. We then demonstrate that the ferroelectric polarization, as measured by the structural polar displacements, increases with decreasing thickness, leading to the emergence of a polar rhombohedral-like phase at the ultrathin limit (1.5 unit cells). Our findings extend to the cases of Hf 0.5 Zr 0.5 O 2 and Zr O 2 , both of which have surface energy landscapes similar to that of Hf O 2 . In conclusion, these findings are consistent with and offer insights into the observed absence of a ferroelectric thickness limit in Hf x Zr 1-x O 2 -based thin films.

36 MATERIALS SCIENCE↗

Examining the Performance of Walsh-DSSS Against FBMC-SS in HF Channels

Abstract—Filter bank multicarrier spread spectrum (FBMCSS) has proven to be a robust and reliable waveform choice for communication over high frequency (HF) skywave links. However, the performance of this waveform has yet to be contextualized against typical robust HF waveforms, such as the Walsh-encoded waveform detailed in the MIL-STD-188-110D, Appendix D document. In this paper, we first outline the advantages of both the Walsh and FBMC-SS waveforms as well as present their developments. Simulation results are then presented for ideal, simulated HF, and HF with interference channel conditions. Lastly, skywave-HF results are presented for these two waveforms both with and without interference.

99 GENERAL AND MISCELLANEOUS↗

Pinning Characteristics of Zr and Hf- Added REBCO Coated Conductors Made by Advanced MOCVD in Low-to-High Magnetic Fields

BaMO 3 (M=Zr, Hf) pinning centers introduced in REBa 2 Cu 3 O 7-x (REBCO and RE = rare earth) coated conductors yield superior performance in high magnetic fields. We present the critical current density J c over a temperature range of 4.2-77 K and magnetic fields of 0-14 T (B || c-axis), of 5-15 mol.% Zr- and Hf-added REBCO 4+ μm thick film tapes fabricated by advanced metal organic chemical vapor deposition (A-MOCVD). The morphology of self-assembled BMO nanorods aligned along c-axis is found to be dependent on the Zr/Hf content. We also observe a correlation between the density of RE 2 O 3 in-plane nano-precipitates and the continuity and concentration of BMO nanorods in films of different Ba content. It is found that the (Ba+M)/Cu (M=Zr, Hf) content in REBa 2 Cu 3 O 7-x affects the shape of pinning force density curves over a wide magnetic field range and temperatures below 20 K. Another remarkable observation is the similarity in the critical current properties of Hf and Zr -added REBCO films as function of (Ba+M)/Cu content at intermediate to high range of (Ba+M)/Cu content. As a result, a quantitative analysis of pinning efficiency and correlation with the microstructure of Zr and Hf- added REBCO coated conductors is discussed.

2G high-temperature superconductor (2G-HTS)↗