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DOE OSTI2020

Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges

The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes of the community on this class of materials to overcome the existing problems of perovskite-based integrated ferroelectrics. However, both the control of ferroelectricity in doped-HfO2 and the direct characterization at the nanoscale of ferroelectric phenomena, are increasingly difficult to achieve. The main limitations are imposed by the inherent intertwining of ferroelectric and dielectric properties, the role of strain, interfaces and electric field-mediated phase, and polarization changes. In this work, using Si-doped HfO2 as a material system, we performed a correlative study with four scanning probe techniques for the local sensing of intrinsic ferroelectricity on the oxide surface. Putting each technique in perspective, we demonstrated that different origins of spatially resolved contrast can be obtained, thus highlighting possible crosstalk not originated by a genuine ferroelectric response. By leveraging the strength of each method, we showed how intrinsic processes in ultrathin dielectrics, i.e., electronic leakage, existence and generation of energy states, charge trapping (de-trapping) phenomena, and electrochemical effects, can influence the sensed response. We then proceeded to initiate hysteresis loops by means of tip-induced spectroscopic cycling (i.e., “wake-up”), thus observing the onset of oxide degradation processes associated with this step. Finally, direct piezoelectric effects were studied using the high pressure resulting from the probe’s confinement, noticing the absence of a net time-invariant piezo-generated charge. Our results are critical in providing a general framework of interpretation for multiple nanoscale processes impacting ferroelectricity in doped-hafnia and strategies for sensing it.

36 MATERIALS SCIENCE↗

NASA NTRS1994

Evaluation of oxide-coated iridium-rhenium chambers

Iridium-coated rhenium (Ir-Re) provides long life operation of radiation-cooled rockets at temperatures up to 2200 C. Ceramic oxide coatings could be used to increase Ir-Re rocket lifetimes and allow operation in highly oxidizing environments. Ceramic oxide coatings promise to serve as both thermal and diffusion barriers for the iridium layer. Seven ceramic oxide-coated Ir-Re, 22-N rocket chambers were tested with gaseous hydrogen/gaseous oxygen (GHz/G02) propellants. Five chambers had thick (over 10 mils), monolithic coatings of either hafnia (HfO2) or zirconia (ZrO2). Two chambers had coatings with thicknesses less than 5 mils. One of these chambers had a thin-walled coating of ZrO2 infiltrated with sol gel HfO2. The other chamber had a coating composed of an Ir-oxide composite. The purpose of this test program was to assess the ability of the oxide coatings to withstand the thermal shock of combustion initiation, adhere under repeated thermal cycling, and operate in aggressively oxidizing environments. All of the coatings survived the thermal shock of combustion and demonstrated operation at mixture ratios up to 11. Testing the Ir-oxide composite-coated chamber included over 29 min at mixture ratio 16. The thicker walled coatings provided the larger temperature drops across the oxide layer (up to 570 C), but were susceptible to macrocracking and eventual chipping at a stress concentrator. The cracks apparently resealed during firing, under compression of the oxide layer. The thinner walled coatings did not experience the macrocracking and chipping of the chambers that was seen with the thick, monolithic coatings. However, burn-throughs in the throat region did occur in both of the thin-walled chambers at mixture ratios well above stoichiometric. The burn-throughs were probably the result of oxygen diffusion through the oxide coating that allowed the underlying Ir and Re layers to be oxidized. The results of this test program indicated that the thin-walled oxide coatings are better suited for repeated thermal cycling than the thick-walled coating, while thicker coatings may be required for operation in aggressively oxidizing environments.

Reed, Brian D.↗

NASA NTRS1993

Radiation Damage Effects in Far Ultraviolet Filters and Substrates

New advances in VUV thin film filter technology have been made using filter designs with multilayers of materials such as Al2O3, BaF2, CaF2, HfO2, LaF3, MgF2, and SiO2. Our immediate application for these filters will be in an imaging system to be flown on a satellite where a 2 X 9 R(sub E) orbit will expose the instrument to approximately 275 krads of radiation. In view of the fact that no previous studies have been made on potential radiation damage of these materials in the thin film format, we report on such an assessment here. Transmittances and reflectances of BaF2, CaF2, HfO2, LaF3, MgF2, and SiO2 thin films on MgF2 substrates, Al2O3 thin films on fused silica substrates, uncoated fused silica and MgF2, and four multilayer filters made from these materials were measured from 120 nm to 180 nm before and after irradiation by 250 krads from a Co-60 gamma radiation source. No radiation-induced losses in transmittance or reflectance occurred in this wavelength range. Additional postradiation measurements from 160 nm to 300 nm indicated a 3 - 5% radiation-induced absorption near 260 nm in some of the samples with MgF2 substrates. From these measurements it is concluded that far ultraviolet filters made from the materials tested should experience less that 5% change from exposure to up to 250 krads of high energy radiation in space applications.

Keffer, Charles E.↗

NASA NTRS1998

Sintering and Creep Behavior of Plasma-Sprayed Zirconia and Hafnia Based Thermal Barrier Coatings

The sintering and creep of plasma-sprayed ceramic thermal barrier coatings under high temperature conditions are complex phenomena. Changes in thermomechanical and thermophysical properties and in the stress response of these coating systems as a result of the sintering and creep processes are detrimental to coating thermal fatigue resistance and performance. In this paper, the sintering characteristics of ZrO2-8wt%y2O3, ZrO2-25wt%CeO2-2.5wt%Y2O3, ZrO2-6w%NiO- 9wt%Y2O3, ZrO2-6wt%Sc2O3-2wt%y2O3 and HfO2-27wt%y2O3 coating materials were investigated using dilatometry. It was found that the HfO2-Y2O3 and baseline ZrO2-Y2O3 exhibited the best sintering resistance, while the NiO-doped ZrO2-Y2O3 showed the highest shrinkage strain rates during the tests. Higher shrinkage strain rates of the coating materials were also observed when the specimens were tested in Ar+5%H2 as compared to in air. This phenomenon was attributed to an enhanced metal cation interstitial diffusion mechanism under the reducing conditions. It is proposed that increased chemical stability of coating materials will improve the material sintering resistance.

Zhu, Dongming↗

NASA NTRS1997

Single Crystal Fibers of Yttria-Stabilized Cubic Zirconia with Ternary Oxide Additions

Single crystal fibers of yttria (Y2O3)-stabilized cubic zirconia, (ZrO2) with ternary oxide additions were grown using the laser float zone fiber processing technique. Ternary additions to the ZrO2-Y2O3 binary system were studied aimed at increasing strength while maintaining the high coefficient of thermal expansion of the binary system. Statistical methods aided in identifying the most promising ternary oxide candidate (Ta2O5, Sc2O3, and HfO2) and optimum composition. The yttria, range investigated was 14 to 24 mol % and the ternary oxide component ranged from 1 to 5 mol %. Hafnium oxide was the most promising ternary oxide component based on 816 C tensile strength results and ease of fabrication. The optimum composition for development was 81 ZrO2-14 Y203-5 HfO2 based upon the same elevated temperature strength tests. Preliminary results indicate process improvements could improve the fiber performance. We also investigated the effect of crystal orientation on strength.

Ritzert, F. J.↗

NASA NTRS2013

Calcium-Magnesium-Aluminosilicate (CMAS) Reactions and Degradation Mechanisms of Advanced Environmental Barrier Coatings

The thermochemical reactions between calcium-magnesium-aluminosilicate- (CMAS-) based road sand and several advanced turbine engine environmental barrier coating (EBC) materials were studied. The phase stability, reaction kinetics and degradation mechanisms of rare earth (RE)-silicates Yb2SiO5, Y2Si2O7, and RE-oxide doped HfO2 and ZrO2 under the CMAS infiltration condition at 1500 C were investigated, and the microstructure and phase characteristics of CMAS-EBC specimens were examined using Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). Experimental results showed that the CMAS dissolved RE-silicates to form crystalline, highly non-stoichiometric apatite phases, and in particular attacking the silicate grain boundaries. Cross-section images show that the CMAS reacted with specimens and deeply penetrated into the EBC grain boundaries and formed extensive low-melting eutectic phases, causing grain boundary recession with increasing testing time in the silicate materials. The preliminary results also showed that CMAS reactions also formed low melting grain boundary phases in the higher concentration RE-oxide doped HfO2 systems. The effect of the test temperature on CMAS reactions of the EBC materials will also be discussed. The faster diffusion exhibited by apatite and RE-doped oxide phases and the formation of extensive grain boundary low-melting phases may limit the CMAS resistance of some of the environmental barrier coatings at high temperatures.

Ahlborg, Nadia L.↗

NASA NTRS2018

Oxidation Study of an Ultra High Temperature Ceramic Coatings Based on HfSiCN

High temperature fiber-reinforced ceramic matrix composites (CMCs) are important for aerospace applications because of their low density, high strength, and significantly higher-temperature capabilities compared to conventional metallic systems. The use of the SiCf/SiC and Cf/SiC CMCs allows the design of lighter-weight, more fuel efficient aircraft engines and also more advanced spacecraft airframe thermal protection systems. However, CMCs have to be protected with advanced environmental barrier coatings when they are incorporated into components for the harsh environments such as in aircraft engine or spacecraft applications. In this study, high temperature oxidation kinetics of an advanced HfSiCN coating on Cf/SiC CMC substrates were investigated at 1300 C, 1400 C, and 1500 C by using thermogravimetric analysis (TGA). The coating oxidation reaction parabolic rate constant and activation energy were estimated from the experimental results. The oxidation reaction studies showed that the coatings formed the most stable, predominant HfSiO4-HfO2 scales at 1400 C. A peroxidation test at 1400 C then followed by subsequent oxidation tests at various temperatures also showed more adherent scales and slower scale growth because of reduced the initial transient oxidation stage and increased HfSiO4-HfO2 content in the scales formed on the HfSiCN coatings.

Environmental Barrier Coatings↗

NASA NTRS2018

Oxidation Study of an Ultra High Temperature Ceramic Coatings Based on HfSiCN

Ultra High Temperature Ceramics (UHTC)↗

NASA NTRS2018

Oxidation Study of an Ultra High Temperature Ceramic Coatings Based on HfSICN

High temperature fiber-reinforced ceramic matrix composites (CMCs) are important for aerospace applications because of their low density, high strength, and significantly higher-temperature capabilities compared to conventional metallic systems. The use of the SiC(sub f)/SiC and C(sub f)/SiC CMCs allows the design of lighter-weight, more fuel efficient aircraft engines and also more advanced spacecraft airframe thermal protection systems. However, CMCs have to be protected with advanced environmental barrier coatings when they are incorporated into components for the harsh environments such as in aircraft engine or spacecraft applications. In this study, high temperature oxidation kinetics of an advanced HfSiCN coating on C(sub f)/SiC CMC substrates were investigated at 1300 C, 1400 C, and 1500 C by using thermogravimetric analysis (TGA). The coating oxidation reaction parabolic rate constant and activation energy were estimated from the experimental results. The oxidation reaction studies showed that the coatings formed the most stable, predominant HfSiO4-HfO2 scales at 1400 C. A peroxidation test at 1400 C then followed by subsequent oxidation tests at various temperatures also showed more adherent scales and slower scale growth because of reduced the initial transient oxidation stage and increased HfSiO4-HfO2 content in the scales formed on the HfSiCN coatings.

environmental barrier coatings (EBCs)↗

DOE OSTI2020

Domain-Matching Epitaxy of Ferroelectric Hf 0.5 Zr 0.5 O 2 (111) on La 2/3 Sr 1/3 MnO 3 (001)

Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the material and for prototyping emerging devices. Ferroelectric Hf 0.5 Zr 0.5 O 2 (111) films were epitaxially stabilized on La 2/3 Sr 1/3 MnO 3 (001) electrodes. This epitaxy, considering the symmetry dissimilarity and the huge lattice mismatch, is not compatible with conventional mechanisms of epitaxy. In this work, to gain insight into the epitaxy mechanism, scanning transmission electron microscopy characterization of the interface was performed, revealing arrays of dislocations with short periodicities. Additionally, these observed periodicities agree with those expected for domain matching epitaxy, indicating that this unconventional mechanism could be the prevailing factor in the stabilization of ferroelectric Hf0.5Zr0.5O2 with (111) orientation in the epitaxial Hf 0.5 Zr 0.5 O 2 (111)/La 2/3 Sr 1/3 MnO 3 (001)heterostructure.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Local Electric Field Effects on Water Dissociation in Bipolar Membranes Studied Using Core–Shell Catalysts

The local electric field strength is thought to affect the rate of water dissociation (WD) in bipolar membranes (BPMs) at the catalyst–nanoparticle surfaces. Here, we study core–shell nanoparticles, where the core is metallic, semiconducting, or insulating, to understand this effect. The nanoparticle cores were coated with a WD catalyst layer (TiO2 or HfO2) via atomic layer deposition (ALD), and the morphology was imaged with transmission electron microscopy. Irrespective of the core material, these core–shell catalysts displayed comparable WD overpotentials at optimal mass loading, despite the hypothesized differences in the electric field strength across the catalyst particle suggested by continuum electrostatic simulations. Substantial atomic interdiffusion between the core and shell was ruled out by X-ray absorption spectroscopy, X-ray photoelectron spectroscopy, and diffuse reflectance optical measurements. However, the optimal mass loading of catalyst was roughly 1 order of magnitude higher for the conductive and high dielectric core materials than for the low dielectric insulating cores. These findings are consistent with the hypothesis that electric field screening within the core material focuses the electric field drop between particles such that larger film thicknesses can be tolerated. Collectively, these data support the idea that it is the local electric field at the molecular level that controls proton-transfer rates and that the metal core/dielectric-shell constructs introduced here modulate that field. Further materials and synthetic design may enable optimization of the electric field strength across the proton-transfer trajectory at the material surface.

Sarma, Prasad V↗

DOE OSTI2022

Vibrational fingerprints of ferroelectric HfO 2

Hafnia (HfO 2 ) is a promising material for emerging chip applications due to its high-κ dielectric behavior, suitability for negative capacitance heterostructures, scalable ferroelectricity, and silicon compatibility. The lattice dynamics along with phononic properties such as thermal conductivity, contraction, and heat capacity are under-explored, primarily due to the absence of high quality single crystals. Herein, we report the vibrational properties of a series of HfO 2 crystals stabilized with yttrium (chemical formula HfO2: xY, where x = 20, 12, 11, 8, and 0%) and compare our findings with a symmetry analysis and lattice dynamics calculations. We untangle the effects of Y by testing our calculations against the measured Raman and infrared spectra of the cubic, antipolar orthorhombic, and monoclinic phases and then proceed to reveal the signature modes of polar orthorhombic hafnia. This work provides a spectroscopic fingerprint for several different phases of HfO 2 and paves the way for an analysis of mode contributions to high-κ dielectric and ferroelectric properties for chip technologies.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Phase diagrams and polarization reversal in nanosized Hf x Zr 1–x O 2–y

To describe the polar properties of nanosized Hf x Zr 1–x O 2–y , we evolve the “effective” Landau–Ginzburg–Devonshire (LGD) model based on the parametrization of the Landau expansion coefficients for polar and antipolar orderings. We have shown that the effective LGD model can predict the influence of screening conditions and size effects on phase diagrams, polarization reversal, and structural properties of nanosized Hf x Zr 1–x O 2–y of various shapes and sizes. To verify the model, we use the available experimental results for Hf x Zr 1–x O 2 thin films and oxygen-deficient HfO2–y nanoparticles prepared under different annealing conditions. X-ray diffraction, which was used to determine the phase composition of the HfO 2–y nanoparticles, revealed the formation of a ferroelectric orthorhombic phase in them. Micro-Raman spectroscopy was used to explore the correlation of lattice dynamics and structural changes that depend on the oxygen vacancy concentration in the HfO 2–y nanoparticles. Since our approach allows us to determine the conditions (shape, sizes, Zr content, and/or oxygen vacancy amount) for which nanosized Hf x Zr 1–x O 2–y are ferroelectric or antiferroelectric, we hope that the obtained results are useful for creation of next generation Si-compatible ferroelectric gate oxide nanomaterials.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Polarization and domains in wurtzite ferroelectrics: Fundamentals and applications

The 2019 report of ferroelectricity in (Al,Sc)N [Fichtner et al., J. Appl. Phys. 125, 114103 (2019)] broke a long-standing tradition of considering AlN the textbook example of a polar but non-ferroelectric material. Combined with the recent emergence of ferroelectricity in HfO2-based fluorites [Böscke et al., Appl. Phys. Lett. 99, 102903 (2011)], these unexpected discoveries have reinvigorated studies of integrated ferroelectrics, with teams racing to understand the fundamentals and/or deploy these new materials—or, more correctly, attractive new capabilities of old materials—in commercial devices. The five years since the seminal report of ferroelectric (Al,Sc)N [Fichtner et al., J. Appl. Phys. 125, 114103 (2019)] have been particularly exciting, and several aspects of recent advances have already been covered in recent review articles [Jena et al., Jpn. J. Appl. Phys. 58, SC0801 (2019); Wang et al., Appl. Phys. Lett. 124, 150501 (2024); Kim et al., Nat. Nanotechnol. 18, 422–441 (2023); and F. Yang, Adv. Electron. Mater. 11, 2400279 (2024)]. We focus here on how the ferroelectric wurtzites have made the field rethink domain walls and the polarization reversal process—including the very character of spontaneous polarization itself—beyond the classic understanding that was based primarily around perovskite oxides and extended to other chemistries with various caveats. The tetrahedral and highly covalent bonding of AlN along with the correspondingly large bandgap lead to fundamental differences in doping/alloying, defect compensation, and charge distribution when compared to the classic ferroelectric systems; combined with the unipolar symmetry of the wurtzite structure, the result is a class of ferroelectrics that are both familiar and puzzling, with characteristics that seem to be perfectly enabling and simultaneously nonstarters for modern integrated devices. The goal of this review is to (relatively) quickly bring the reader up to speed on the current—at least as of early 2025—understanding of domains and defects in wurtzite ferroelectrics, covering the most relevant work on the fundamental science of these materials as well as some of the most exciting work in early demonstrations of device structures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2020

Materials Data on HfGeO2 by Materials Project

HfO2(Ge) crystallizes in the tetragonal I4_1/a space group. The structure is three-dimensional. Hf is bonded to six equivalent O atoms to form distorted edge-sharing HfO6 octahedra. There are a spread of Hf–O bond distances ranging from 2.14–2.26 Å. Ge is bonded in a distorted square co-planar geometry to four equivalent O atoms. There are two shorter (2.48 Å) and two longer (2.58 Å) Ge–O bond lengths. O is bonded in a 5-coordinate geometry to three equivalent Hf and two equivalent Ge atoms.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Exploiting Fixed Charge at Selective Contacts for Silicon Photovoltaics

The goal of this work was to examine and exploit fixed interface charges in ultra-thin (0-3 nm thickness) tunnel dielectric layers sandwiched between silicon and selective contact metal oxides (molybdenum oxide, MoO x , titanium oxide, TiO 2 ). Specifically, the interface fixed charge was varied by changing processing conditions and materials over a wide range and the effect on the current-voltage behavior and the Schottky barrier height was quantified. In budget period 1 (year 1), the objective was to grow aluminum oxide tunnel layers with quantified fixed charge over a range of ~1E12 to ~-2E12 cm -2 and combine these with MoO x and TiO 2 layers on Czochralsi (CZ) mono p- and n-Si, respectively. We sought conditions that maximize fixed charge and minimize Schottky barrier height to MoO x contacts to p-Si. This objective, along with investigating the effects of silicon surface terminations, occupied the majority of the project timeline (Q1-Q8) due to complications with high specific contact resistivity values. In the last two quarters of the project period, the objective was to insert HfO2 layers between Si and aluminum oxide layers to quench the fixed charge for layers with otherwise identical thermal history. Another objective was to lower the barrier height at TiO 2 -based contacts on n-type Si, but that was never investigated completely.

14 SOLAR ENERGY↗

DOE OSTI2025

Status of the Fuel Fragment Dispersal Studies at Oak Ridge National Laboratory

During a loss-of-coolant accident, a nuclear fuel rods undergo balloon and burst. High burnup fuel is known to fragment and pulverize leading to the potential for the fuel to disperse through the burst opening either during the initial burst or following the burst during the reflood event. This milestone summarizes the design and assembly of a system to study dispersal in a postburst event. Surrogate fuel material (HfO2, tungsten, and yttria-stabilized zirconia [YSZ]) dispersing from as-burst loss-of-coolant accident (LOCA) test specimens was extensively investigated, along with dispersal of actual nuclear fuel following a LOCA Severe Accident Test Station (SATS) test. Surrogate material tests spanned a variety of burst geometries, particle types, particle size distributions, and rod oscillation loadings (frequency and amplitude combinations).

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2022

Synthesis and Ultrahigh Pressure Compression of High-Entropy Boride (Hf0.2Mo0.2Nb0.2Ta0.2Zr0.2)B2 to 220 GPa

The high-entropy boride (Hf0.2Mo0.2Nb0.2Ta0.2Zr0.2)B2 material was synthesized under high-pressures and high-temperatures in a large-volume Paris-Edinburgh (PE) press from a ball-milled powder mix of HfO2, MoO3, Nb2O5, Ta2O5, ZrO2, carbon black, and boron carbide. The transformation process was monitored in situ by energy-dispersive x-ray diffraction with conversion starting at 1100 °C and completed by 2000 °C with the formation of a single hexagonal AlB2-type phase. The synthesized sample was recovered, powdered, and mixed with platinum pressure marker and studied under high pressure by angle-dispersive x-ray diffraction in a diamond anvil cell. The hexagonal AlB2-type phase of (Hf0.2Mo0.2Nb0.2Ta0.2Zr0.2)B2 was found to be stable up to the highest pressure of 220 GPa reached in this study (volume compression V/V0 = 0.70). The third order Birch-Murnaghan equation of state fit to the high-pressure data up to 220 GPa results in an ambient pressure unit cell volume V0=28.16±0.04 Å3, bulk modulusKo = 407 ± 6 GPa, pressure derivative of bulk-modulus K0′ = 2.73 ± 0.045 GPa. Our study indicates that this high-entropy boride (Hf0.2Mo0.2Nb0.2Ta0.2Zr0.2)B2 material is stable to ultrahigh pressures and temperatures and exhibit high bulk modulus similar to other incompressible transition metal borides like ReB2 and Os2B3.

36 MATERIALS SCIENCE↗