High temperature optoelectronic devices for power electronics
A high temperature optoelectronic isolator for power electronics operating above 250 degrees Celcius.
Chen, Zhong↗
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Electron Correlation and High-Temperature Superconductivity
Strong electron correlation plays a central role in the high-temperature superconductivity (HTSC) of cuprates. However, to date, research has focused only on its role in spin dynamics and related effects, even though it is becoming increasingly clear that spin alone may not be sufficient to create HTSC. Here, we discuss a possible role of electron correlation in the Bose–Einstein condensation (BEC) of Cooper pairs. Recently, we succeeded in observing dynamic electron correlation via inelastic X-ray scattering through results presented in real space. We discovered that electron correlations are strongly modified in the plasmon, proving that electron dynamics significantly affect electron correlation. Earlier, we found that in 4 He, the atom–atom distance in the BE condensate is 10% longer than that in the non-condensate. These results suggest the possibility that the reduction in electron-repulsion energy upon BEC is driving T c to high values. Thus, electron correlation itself could be the origin of the HTSC phenomenon.
Bose–Einstein condensation↗
Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications
β ‐Ga 2 O 3 ‐based semiconductor devices are expected to have significantly improved high‐power and high‐temperature performance due to its ultrawide bandgap of close to 5 eV. However, the high‐temperature operation of these ultrawide‐bandgap devices is usually limited by the relatively low 1–2 eV built‐in potential at the Schottky barrier with most high‐work‐function metals. Herein, heterojunction p ‐NiO/n‐ β ‐Ga 2 O 3 diodes fabrication and optimization for high‐temperature device applications are reported, demonstrating a current rectification ratio ( I ON / I OFF ) of more than 10 6 at 410 °C. The NiO heterojunction diode can achieve higher turn‐on ( V ON ) voltage and lower reverse leakage current compared to the Ni‐based Schottky diode fabricated on the same single‐crystal β ‐Ga 2 O 3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built‐in potential and additional band offset. These results suggest that heterojunction p–n diodes based on β ‐Ga 2 O 3 can significantly improve high‐temperature electronic device and sensor performance.
Sohel, Shahadat H.↗
Packaging Technology Developed for High-Temperature SiC Sensors and Electronics
A ceramic- and thick-film-materials-based prototype electronic package designed for silicon carbide (SiC) high-temperature sensors and electronics has been successfully tested at 500 C in an oxygen-containing air environment for 500 hours. This package was designed, fabricated, assembled, and electronically evaluated at the NASA Glenn Research Center at Lewis Field with an in-house-fabricated SiC semiconductor test chip. High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as space missions to the inner solar system or the emission control electronics and sensors in aeronautical engines. Single-crystal SiC has such excellent physical and chemical material properties that SiC-based semiconductor electronics can operate at temperatures over 600 C, which is significantly higher than the limit for Si-based semiconductor devices. SiC semiconductor chips were recently demonstrated to be operable at temperatures as high as 600 C, but only in the probe station environment because suitable packaging technology for sensors and electronics at temperatures of 500 C and beyond did not exist. Thus, packaging technology for SiC-based sensors and electronics is immediately needed for both application and commercialization of high-temperature SiC sensors and electronics. In response to this need, researchers at Glenn designed, fabricated, and assembled a prototype electronic package for high-temperature electronics, sensors, and microelectromechanical systems (MEMS) using aluminum nitride (AlN) substrate and gold (Au) thick-film materials. This prototype package successfully survived a soak test at 500 C in air for 500 hours. Packaging components tested included thick-film high-temperature metallization, internal wire bonds, external lead bonds, and a SiC diode chip die-attachment. Each test loop, which was composed of thick-film printed wire, wire bond, and lead bond was subjected to a 50-mA direct current for 250 hours at 500 C.
Chen, Liang-Yu↗
Mid-Latitude Ionospheric Disturbances Due to Geomagnetic Storms at ISS Altitudes
Spacecraft charging of the International Space Station (ISS) is dominated by interaction of the US high voltage solar arrays with the F2-region ionosphere plasma environment. ISS solar array charging is enhanced in a high electron density environment due to the increased thermal electron currents to the edges of the solar cells. High electron temperature environments suppress charging due to formation of barrier potentials on the charged solar cell cover glass that restrict the charging currents to the cell edge [Mandell et al., 2003]. Environments responsible for strong solar array charging are therefore characterized by high electron densities and low electron temperatures. In support of the ISS space environmental effects engineering community, we are working to understand a number of features of solar array charging and to determine how well future charging behavior can be predicted from in-situ plasma density and temperature measurements. One aspect of this work is a need to characterize the magnitude of electron density and temperature variations that occur at ISS orbital altitudes (approximately 400 km) over time scales of days, the latitudes over which significant variations occur, and the time periods over which the disturbances persist once they start. This presentation provides examples of mid-latitude electron density and temperature disturbances at altitudes relevant to ISS using data sets and tools developed for our ISS plasma environment study. "Mid-latitude" is defined as the extra-tropical region between approx. 30 degrees to approx. 60 degrees magnetic latitude sampled by ISS over its 51.6 degree inclination orbit. We focus on geomagnetic storm periods because storms are well known drivers for disturbances in the ionospheric plasma environment.
Minow, Joseph I.↗
Distributed Control Architecture for Gas Turbine Engine
The transformation of engine control systems from centralized to distributed architecture is both necessary and enabling for future aeropropulsion applications. The continued growth of adaptive control applications and the trend to smaller, light weight cores is a counter influence on the weight and volume of control system hardware. A distributed engine control system using high temperature electronics and open systems communications will reverse the growing trend of control system weight ratio to total engine weight and also be a major factor in decreasing overall cost of ownership for aeropropulsion systems. The implementation of distributed engine control is not without significant challenges. There are the needs for high temperature electronics, development of simple, robust communications, and power supply for the on-board electronics.
Dennis Culley↗
Zephyr: A Landsailing Rover for Venus
With an average temperature of 450C and a corrosive atmosphere at a pressure of 90 bars, the surface of Venus is the most hostile environment of any planetary surface in the solar system. Exploring the surface of Venus would be an exciting goal, since Venus is a planet with significant scientific mysteries, and interesting geology and geophysics. Technology to operate at the environmental conditions of Venus is under development. A rover on the surface of Venus with capability comparable to the rovers that have been sent to Mars would push the limits of technology in high-temperature electronics, robotics, and robust systems. Such a rover would require the ability to traverse the landscape on extremely low power levels. We have analyzed an innovative concept for a planetary rover: a sail-propelled rover to explore the surface of Venus. Such a rover can be implemented with only two moving parts; the sail, and the steering. Although the surface wind speeds are low (under 1 m/s), at Venus atmospheric density even low wind speeds develop significant force. Under funding by the NASA Innovative Advanced Concepts office, a conceptual design for such a rover has been done. Total landed mass of the system is 265 kg, somewhat less than that of the MER rovers, with a 12 square meter rigid sail. The rover folds into a 3.6 meter aeroshell for entry into the Venus atmosphere and subsequent parachute landing on the surface. Conceptual designs for a set of hightemperature scientific instruments and a UHF communication system were done. The mission design lifetime is 50 days, allowing operation during the sunlit portion of one Venus day. Although some technology development is needed to bring the high-temperature electronics to operational readiness, the study showed that such a mobility approach is feasible, and no major difficulties are seen.
rover↗
Interdiffusion and Formation of Intermetallic Compounds in High-Temperature Power Electronics Substrate Joints Fabricated by Transient Liquid Phase Bonding
Power electronics packages typically comprise a dielectric substrate bonded to a metal layer and attached to heat sinks using a low-thermal-conductivity solder. These multiple layers increase the effective thermal resistance of the package and are responsible for package failures under cyclic thermal loads. Bonding the aluminum nitride dielectric layer (AlN) directly to a low coefficient of thermal expansion (CTE) aluminum silicon carbide (AlSiC) cold plate using copper-aluminum (Cu-Al) transient liquid phase (TLP) bonding has been shown to improve the mechanical reliability of the power electronic packages while making the package more compact by bringing the cooling solutions closer to the devices. This study aims to characterize the Cu-Al bonds formed during the TLP bonding of AlSiC with three different power electronics substrates: pure aluminum nitride (AlN), aluminum (DBA), and copper (DBC). The material compositions and microstructures of the bonds were analyzed using scanning electron microscopy (SEM), x-ray spectroscopy (EDS), confocal scanning acoustic microscopy (C-SAM), and x-ray diffraction (XRD). ..alpha..-Al solid compound was identified as the dominant phase in AlN-AlSiC and Al-AlSiC, with a notable presence of SiC particles. In contrast, three intermetallic phases - ..theta..-CuAl2, ..eta..-CuAl, and ..gamma..'- Cu9Al4 - were observed in the Cu-AlSiC bond. A computational solid-state diffusion model was developed to predict the intermetallic compounds (IMCs) formed during Cu-Al TLP bonding in each system, which supported the observation that an initial Cu volume fraction of 20 % in the material layers produced a final bond composition of >95 % Al with minimal IMC growth. However, increased Cu concentrations produced higher concentration gradients, leading to increased growth of IMCs, Kirkendall voids, and interstitial cracks.
DIRECT ENERGY CONVERSION↗
Ultrawide Bandgap AlGaN Transistors for High Operating Temperature Electronics
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Klein, Brianna Alexandra↗
In Situ High-Temperature Ultrafast Electron Diffraction through Integrated Furnace and MEMS Platforms
Temperature fundamentally governs phase stability, defect evolution, and transport behavior in materials. Despite its central role, direct measurements of structural evolution at elevated temperatures on ultrafast timescales have remained limited. Here, we report the design, integration, and validation of 2 complementary in situ heating platforms that substantially extend the thermal operating range of ultrafast electron diffraction (UED). A compact furnace-type heating stage enables stable diffraction measurements from room temperature to 800 K with ±0.1 K stability under ultrahigh vacuum, achieved through multi-sensor feedback control, dual air-cooling channels, and a thermally isolated motion stage. In parallel, a microelectromechanical system (MEMS)-based heating platform provides rapid thermal response and access to extreme temperatures ≥1,373 K with ±0.1 K stability over hundreds-micrometer regions while supporting simultaneous electrical biasing for electrothermal coupling studies. Absolute temperature calibration is established using diffraction-based thermometry via aluminum lattice expansion and independently validated through in situ melting of bismuth thin films. UED measurements further reveal pronounced temperature-dependent nonequilibrium lattice dynamics in bismuth, including modifications to electron–phonon coupling and Debye–Waller behavior, as well as enhanced ultrafast diffuse scattering in aluminum at elevated temperatures. Together, these developments establish a practical framework for quantitative, time-resolved studies of temperature-driven kinetics and nonequilibrium structural dynamics under extreme thermal environments.
Bai, Qianqian [Chinese Academy of Sciences (CAS), ↗
YBCO/Metal Oxide/YBCO Edge-Geometry Josephson Device with Equitaxial Insulator Overlayers for High-Temperature Superconductive Electronics
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Superconductor-Normal-Superconductor (SNS)↗
Bonded Interfaces for High-Temperature Power Electronics
Wide-bandgap devices have pushed the operational limit of semiconductor devices in automotive power electronics packages to higher temperatures (>200 degrees C). While a higher efficiency can be achieved through the use of wide-bandgap devices, the entire package must be re-designed with components that can withstand the higher temperature limits. Sintered silver and transient liquid phase bonds are potential candidates as bonded materials for use in higher temperatures however, the underlying mechanics of deformation under thermal loads and the resulting failure mechanisms in these materials are not well understood. Furthermore, thermomechanical modeling plays a key role in understanding the degradation behavior of bonded interface materials and for design optimization of power electronics packages.
ADVANCED PROPULSION SYSTEMS,DIRECT ENERGY CONVERSI↗
In Situ Transmission Electron Microscopy of High-Temperature Inconel-625 Corrosion by Molten Chloride Salts
This paper describes an approach to monitor high temperature molten chloride (MgCl 2 -NaCl-KCl) salt corrosion of Inconel-625 alloy in real time at high spatial resolution. The approach is based on a micro-environmental-cell assembly integrated into a transmission-electron-microscope goniometer to examine in situ the salt-alloy interface during corrosion, employing real time electron diffraction and imaging. It establishes procedures to minimize incorporation of H 2 O or O 2 from atmosphere in the chloride salts during sample fabrication and corrosion, which is critical to understanding the fundamental corrosion mechanisms. A clustering algorithm and a 2D Gaussian fit function are used to determine diffraction spot intensities in in situ diffraction patterns, to quantify alloy corrosion. This facilitates quantitative observation of the evolution of individual grains, in contrast to conventional macroscopic corrosion rate quantification. The isothermal corrosion rate of Inconel-625 in an anhydrous, unoxidized salt-stack is 220 ± 30 μm year -1 at 700 °C and 350 ± 20 μm year -1 at 800 °C. However, the corrosion rate at 700 °C increases five-fold to 1000 ± 170 μm year -1 when the salt stack is air-exposed, indicating the dominant effects of hydrated or oxidized impurities on corrosion acceleration. Furthermore, real time imaging of the microstructure evolution suggests that corrosion is initiated at grain boundaries.
14 SOLAR ENERGY↗
Noise reduction of stochastic density functional theory for metals
Density Functional Theory (DFT) has become a cornerstone in the modeling of metals. However, accurately simulating metals, particularly under extreme conditions, presents two significant challenges. First, simulating complex metallic systems at low electron temperatures is difficult due to their highly delocalized density matrix. Second, modeling metallic warm-dense materials at very high electron temperatures is challenging because it requires the computation of a large number of partially occupied orbitals. This study demonstrates that both challenges can be effectively addressed using the latest advances in linear-scaling stochastic DFT methodologies. Despite the inherent introduction of noise into all computed properties by stochastic DFT, this research evaluates the efficacy of various noise reduction techniques under different thermal conditions. Our observations indicate that the effectiveness of noise reduction strategies varies significantly with the electron temperature. Furthermore, we provide evidence that the computational cost of stochastic DFT methods scales linearly with system size for metal systems, regardless of the electron temperature regime.
Chemistry↗
High Temperature Devices for Aerospace Applications
This presentation will overview important new capabilities and benefits that next-generation higher temperature electronics promise for a variety of aerospace systems and missions. Initial aerospace infusions of higher temperature electronics to be discussed include jet engines and the prolonged robotic exploration of the Venus surface. Complete redesign of systems compared to prior conventional electronics practices would yield the most revolutionary benefits. However, the inherent higher risk and expense associated with new technology adoption will likely drive a more evolutionary technology infusion process, especially since flight qualification demands large safety margins and testing that ensures reliable operation for far longer than actual mission duration. SiC pn-junction based devices are inherently capable of the most durable operation at the highest application temperatures compared other transistor technologies, but such integrated circuits (ICs) will never achieve integration levels near today’s silicon ICs. Extreme temperature high-power devices will also be de-rated compared to room-temperature performance. While the high temperature market will always be small compared to the conventional temperature mass-market, compatibility and leveraging of existing foundry manufacturing is vital to the establishment of a sustainable high temperature electronics ecosystem sufficient to significantly improve aerospace systems.
High Temperature↗
Thermal and Nonthermal Electron-ion Bremsstrahlung Spectrum from High-Temperature Plasmas
Electron-ion bremsstrahlung radiation from high-temperature plasmas is investigated. The first- and second-order Coulomb corrections in the nonrelativistic bremsstrahlung radiation power are obtained by the Elwert-Sommerfeld factor. In this paper, two cases of the electron distributions, the thermal and nonthermal power-law distributions, are considered. The inclusion of Coulomb corrections is necessary in deducing correctly the electron distribution function from radiation data. These results provide the correct information of electron distributions in high-temperature plasmas, such as in inertial confinement fusion plasmas and in the astrophysical hot thermal and nonthermal x-ray sources.
Jung, Young-Dae↗
Ultrafast multi-cycle terahertz measurements of the electrical conductivity in strongly excited solids
Key insights in materials at extreme temperatures and pressures can be gained by accurate measurements that determine the electrical conductivity. Free-electron laser pulses can ionize and excite matter out of equilibrium on femtosecond time scales, modifying the electronic and ionic structures and enhancing electronic scattering properties. The transient evolution of the conductivity manifests the energy coupling from high temperature electrons to low temperature ions. Here we combine accelerator-based, high-brightness multi-cycle terahertz radiation with a single-shot electro-optic sampling technique to probe the evolution of DC electrical conductivity using terahertz transmission measurements on sub-picosecond time scales with a multi-undulator free electron laser. Our results allow the direct determination of the electron-electron and electron-ion scattering frequencies that are the major contributors of the electrical resistivity.
36 MATERIALS SCIENCE↗