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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Characteristics of annealed p/n junctions between GaAs and Si(100)

Electrical characteristics of a GaAs(p)/Si(n) interface were determined from capacitance-voltage, current-voltage, and secondary ion mass spectroscopy (SIMS) measurements and compared to those on GaAs(p) epitaxial layers on GaAs(n) substrates. The comparison was made between the junctions as grown, and after an anneal at 850 C for 20 min in 10 percent forming gas under an As overpressure. For the GaAs/Si junction the ideality factor changed from 2 or larger to 1.5 and the apparent intercept voltage changed from 2.5 to 1.3 V after annealing. For the GaAs homojunction, the intercept voltage increased from 1.1 to 1.3 V. In addition, the excess current in the forward and reverse bias conditions dropped drastically in the heterojunction. No movement of the metallurgical junction was discernible to within the resolution capability of SIMS. The junction properties obtained by annealing suggest an atomic restructuring of the Si(100) interface during growth or annealing. These new results raise the possibility that the GaAs/Si interface can be made into an electrically viable junction and incorporated into active devices.

Unlu, M. S.↗
NASA NTRS1988

Al(0.3)Ga(0.7)As / Al(0.05)Ga(0.95)As light-emitting diodes on GaAs-coated Si substrates grown by liquid phase epitaxy

Al(0.3)Ga(0.7)As/Al(0.05)Ga(0.95)As double-heterostructure light-emitting diodes (LEDs) were successfully grown for the first time by liquid phase epitaxy on a GaAs-coated Si substrate that was prepared by a sequential process of migration-enhanced epitaxy and molecular beam epitaxy. The edge-emitting LEDs had diode ideality factors of 1.54 at a forward-biased voltage higher than 0.9 V and external quantum efficiencies of 0.0033 W/A per facet. This efficiency is 50 times higher than the previously reported value, and is on the same order as that of AlGaAs homojunction LEDs fabricated on the GaAs substrates by liquid phase epitaxy.

Sakai, Shiro↗
NASA NTRS1992

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

Bhapkar, Udayan V.↗
NASA NTRS1994

Calculation of near optimum design of InP/In(0.53)Ga(0.47)As monolithic tandem solar cells

An analysis of InP/GaAs tandem solar cell structure has been undertaken to allow for maximum AMO conversion efficiencies (space applications) while still taking into account both the theoretical and technological limitations. The dependence of intrinsic and extrinsic parameters such as diffusion lengths and generation-recombination (GR) lifetimes on N/P and P/N devices performances are clearly demonstrated. We also report for the first time the improvement attainable through the use of a new patterned tunnel junction as the inter cell ohmic interconnect. Such a design minimizes the light absorption in the interconnect region and leads to a noticeable increase in the cell efficiency. Our computations predict 27 percent AMO efficiency for N/P tandems with ideality factor gamma = 2 (GR lifetimes approximately equal 1 micron), and 36 percent for gamma = 1 (GR lifetimes approximately equals 100 microns). The method of optimization and the values of the physical and optical parameters are discussed.

Renaud, P.↗
NASA NTRS2000

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Das, K.↗
NASA NTRS2001

Study of Electrical Contacts and Devices in Advanced Semiconductors

Research conducted at Tuskegee University concentrates on electrical contacts to GaN films and their characterization with the objective of understanding contact formation and realizing low-resistance metal contacts. Contact properties are known to be strongly related to surface preparation. It appears that the as-received material had a thin oxide film on the surface of the GaN film. Various cleaning treatments were employed in order to render the surface contamination free and removal of the oxide film. Metal films were then deposited by e-beam evaporation. Electrical characteristics of these contacts indicated that the optimal treatment was an organic solvent cleaning followed by etching in buffered oxide solution. Contacts established with Al were observed to be ohmic in nature, whereas Au, Cr, Ti, and Pt exhibit rectifying contacts. Platinum contacts were almost ideal as shown by an ideality factor of 1.02.

Hall, H. P.↗
NASA NTRS2005

Carbon nanotube Schottky diodes using Ti-Schottky and Pt-ohmic contacts for high frequency applications

We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than 15 V. To decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes, in the range of 10-13 W(square root)xHz.

semiconducting↗
NASA NTRS2007

Carbon Nanotubes for Space Photovoltaic Applications

Carbon nanotubes (CNTs) can be envisioned as an individual graphene sheet rolled into a seamless cylinder (single-walled, SWNT), or concentric sheets as in the case of a multi-walled carbon nanotube (MWNT) (1). The role-up vector will determine the hexagonal arrangement and "chirality" of the graphene sheet, which will establish the nanotube to be metallic or semiconducting. The optoelectronic properties will depend directly on this chiral angle and the diameter of the SWNT, with semiconductor types exhibiting a band gap energy (2). Characteristic of MWNTs are the concentric graphene layers spaced 0.34 nm apart, with diameters from 10-200 nm and lengths up to hundreds of microns (2). In the case of SWNTs, the diameters range from 0.4 - 2 nm and lengths have been reported up to 1.5 cm (3). SWNTs have the distinguishable property of "bundling" together due to van der Waal's attractions to form "ropes." A comparison of these different structural types is shown in Figure 1. The use of SWNTS in space photovoltaic (PV) applications is attractive for a variety of reasons. Carbon nanotubes as a class of materials exhibit unprecedented optical, electrical, mechanical properties, with the added benefit of being nanoscale in size which fosters ideal interaction in nanomaterial-based devices like polymeric solar cells. The optical bandgap of semiconducting SWNTs can be varied from approx. 0.4 - 1.5 eV, with this property being inversely proportional to the nanotube diameter. Recent work at GE Global Research has shown where a single nanotube device can behave as an "ideal" pn diode (5). The SWNT was bridged over a SiO2 channel between Mo contacts and exhibited an ideality factor of 1, based on a fit of the current-voltage data using the diode equation. The measured PV efficiency under a 0.8 eV monochromatic illumination showed a power conversion efficiency of 0.2 %. However, the projected efficiency of these junctions is estimated to be > 5 %, especially when one considers the enhanced absorption (from nanotubes whose bandgap is tailored to illumination) and electromagnetic coupling in a network of nanotubes.

Efstathiadis, Harry↗
NASA NTRS2003

CO2 Acquisition Membrane (CAM)

The objective of CAM is to develop, test, and analyze thin film membrane materials for separation and purification of carbon dioxide (CO2) from mixtures of gases, such as those found in the Martian atmosphere. The membranes are targeted toward In Situ Resource Utilization (ISRU) applications that will operate in extraterrestrial environments and support future unmanned and human space missions. A primary application is the Sabatier Electrolysis process that uses Mars atmosphere CO2 as raw material for producing water, oxygen, and methane for rocket fuel and habitat support. Other applications include use as an inlet filter to collect and concentrate Mars atmospheric argon and nitrogen gases for habitat pressurization, and to remove CO2 from breathing gases in Closed Environment Life Support Systems (CELSS). CAM membrane materials include crystalline faujasite (FAU) zeolite and rubbery polymers such as silicone rubber (PDMS) that have been shown in the literature and via molecular simulation to favor adsorption and permeation of CO2 over nitrogen and argon. Pure gas permeation tests using commercial PDMS membranes have shown that both CO2 permeance and the separation factor relative to other gases increase as the temperature decreases, and low (Delta)P(Sub CO2) favors higher separation factors. The ideal CO2/N2 separation factor increases from 7.5 to 17.5 as temperature decreases from 22 C to -30 C. For gas mixtures containing CO2, N2, and Ar, plasticization decreased the separation factors from 4.5 to 6 over the same temperature range. We currently synthesize and test our own Na(+) FAU zeolite membranes using standard formulations and secondary growth methods on porous alumina. Preliminary tests with a Na(+) FAU membrane at 22 C show a He/SF6 ideal separation factor of 62, exceeding the Knudsen diffusion selectivity by an order of magnitude. This shows that the membrane is relatively free from large defects and associated non-selective (viscous flow) transport mechanisms. The Membrane Test Facility (MTF) has been developed to measure membrane permeance over a wide range of temperature and pressure. The facility uses two volume compartments separated by the membrane that are instrumented to measure temperature, delta pressure across the membrane, and gas composition. A thermal shroud supports and encloses the membrane, and provides temperature control. Methods were developed to determine membrane permeance using the first order decay of the pressure difference between the sealed compartments, using the total pressure for pure gases, and partial pressure of each species in gas mixtures. The technique provides an end-to-end measurement of gas permeance that includes concentration polarization effects. Experiments have shown that in addition to membrane permeance properties, the geometry and design of associated structures play an important role in how membrane systems will function on Mars.

Mason, Larry W.↗
DOE OSTI2022

Plant-level performance and degradation of 31 GW DC of utility-scale PV in the United States

In this updated study, which samples 50% more capacity than the original and adds two additional years of operating history, we assess the performance of a fleet of 631 utility-scale PV plants totaling 31.0 GW DC (23.6 GW AC ) of capacity that achieved commercial operations in the United States from 2007-2018 and that have operated for at least two full calendar years. We use detailed information on individual plant characteristics, in conjunction with modeled irradiance data, to model expected or “ideal” capacity factors in each full calendar year of each plant’s operating history. A comparison of ideal versus actual first-year capacity factors finds that this fleet has modestly underperformed initial expectations (as modeled) on average, though perhaps due as much to modeling issues as to actual underperformance. We then analyze fleet-wide performance degradation in subsequent years by employing a “fixed effects” regression model to statistically isolate the impact of age on plant performance. The resulting average fleet-wide degradation rate of -1.2%/year (±0.1%) represents a slight improvement (seemingly driven by the oldest plants in our sample) over the -1.3%/year (±0.2%) found in our original study, yet is still of greater magnitude than is commonly found. We emphasize, however, that these fleet-wide estimates reflect both recoverable and unrecoverable degradation across the entire plant, and so will naturally be of greater magnitude than module- or cell-level studies, and/or studies that focus only on unrecoverable degradation. Moreover, when focusing on a sub-sample of newer and larger plants with higher DC:AC ratios—i.e., plants that more-closely resemble what is being built today—we find a more moderate sample-wide average performance decline of -0.7%/year (±0.4%), which is more in line with other estimates from the recent literature.

14 SOLAR ENERGY↗
NASA NTRS1985

Human factors of intelligent computer aided display design

Design concepts for a decision support system being studied at NASA Langley as an aid to visual display unit (VDU) designers are described. Ideally, human factors should be taken into account by VDU designers. In reality, although the human factors database on VDUs is small, such systems must be constantly developed. Human factors are therefore a secondary consideration. An expert system will thus serve mainly in an advisory capacity. Functions can include facilitating the design process by shortening the time to generate and alter drawings, enhancing the capability of breaking design requirements down into simpler functions, and providing visual displays equivalent to the final product. The VDU system could also discriminate, and display the difference, between designer decisions and machine inferences. The system could also aid in analyzing the effects of designer choices on future options and in ennunciating when there are data available on a design selections.

Hunt, R. M.↗
DOE OSTI2023

Screen printable copper pastes for silicon solar cells

The current work demonstrates the successful metallization of a PERC silicon solar cell with screen-printable copper (Cu) paste that is sintered at elevated temperature in air atmosphere. The existing state of the art in Silicon (Si) solar cell metallization is silver (Ag) paste; Cu cost is 1/100th the cost of Ag and has a comparable conductivity. However, Cu undergoes rapid oxidation at elevated temperatures and the high diffusion of Cu into Si restricts its usage in the metallization of silicon solar cells. In this paper, a Cu paste containing a proprietary mixture of antioxidant additives and diffusion inhibitors was used to make front gridlines on PERC cells. The Cu-printed cells were fired in an IR belt furnace with a peak temperature of 576°C in air atmosphere. The solar cells discussed here reached an efficiency of 19%, which is 88% of the efficiency measured for a commercial Ag-printed cell. The working devices were further characterized using STEM, EDX, ToF-SIMS and long-term suns-V oc studies demonstrating an absence of Cu diffusion. Furthermore, thermally stressing the Cu-printed solar cells yielded a reduction of less than 1.9% of the initial pseudo fill factor (pFF) after 1000 hours at 200°C. Here, the shunt resistance of cells monitored over 3 years remained within 2.5% of its initial value, which demonstrates the effectiveness of the Cu diffusion barrier.

14 SOLAR ENERGY↗
DOE OSTI2020

Quantifying Losses and Assessing the Photovoltage Limits in Metal–Insulator–Semiconductor Water Splitting Systems

Metal–insulator–semiconductor (MIS) photo-electrocatalysts offer a pathway to stable and efficient solar water splitting. Initially motivated as a strategy to protect the underlying semiconductor photoabsorber from harsh operating conditions, the thickness of the insulator layer in MIS systems has recently been shown to be a critical design parameter which can be tuned to optimize the photovoltage. Here we analyze the underlying mechanism by which the thickness of the insulator layer impacts the performance of MIS photo-electrocatalysts. A concrete example of an Ir/HfO 2 /n-Si MIS system is investigated for the oxygen evolution reaction. The results of combined experiments and modeling suggest that the insulator thickness affects the photovoltage i) favorably by controlling the flux of charge carriers from the semiconductor to the metal electrocatalyst and ii) adversely by introducing nonidealities such as surface defect states which limit the generated photovoltage. It is important to quantify these different mechanisms and suggest avenues for addressing these nonidealities to enable the rational design of MIS systems that can approach the fundamental photovoltage limits. The analysis described in this contribution as well as the strategy toward optimizing the photovoltage are generalizable to other MIS systems.

36 MATERIALS SCIENCE↗
NASA NTRS1976

Subjective assessment of simulated helicopter blade-slap noise

The effects of several characteristics of helicopter blade slap upon human annoyance are examined. Blade slap noise was simulated by using continuous and impulsive noises characterized by five parameters: The number of sine waves in a single impulse; the frequency of the sine waves; the impulse repetition frequency; the sound pressure level (SPL) of the continuous noise; and the idealized crest factor of the impulses. Ten second samples of noise were synthesized with each of the five parameters at representative levels. The annoyance of each noise was judged by 40 human subjects. Analysis of the subjective data indicated that each of the five parameters had a statistically significant effect upon the annoyance judgments. The impulse crest factor and SPL of the continuous noise had very strong positive relationships with annoyance. The other parameters had smaller, but still significant, effects upon the annoyance judgments.

Lawton, B. W.↗
NASA NTRS1985

Study of winglets applied to biplanes

The possibility of improving the aerodynamic characteristics of a biplane configuration by adding winglets is examined both theoretically and experimentally. Theoretical calculations show good agreement with experiment in predicting inviscid drag due to lift. Theoretical and experimental results indicate that the addition of winglets to an optimized biplane configuration can increase the ideal efficiency factor by up to 13 percent, as well as increasing the lift curve slope and maximum lift coefficient.

Gall, P. D.↗
NASA NTRS1985

Study of winglets applied to biplanes

This paper examines, both theoretically and experimentally, the possibility of improving the aerodynamic characteristics of a biplane configuration by adding winglets. Theoretical calculations show good agreement with experiment in predicting inviscid drag due to lift. Theoretical and experimental results indicate that the addition of winglets to an optimized biplane configuration can increase the ideal efficiency factor by up to 13 percent, as well as increasing the lift-curve slope and maximum lift coefficient. A theoretical analysis comparing the biplane with an optimized winglet to an equivalent monoplane indicates that the biplane has the potential for a 6.4-percent increase in L/D(max), and 13-percent increase in C(L) to the 3/2-power/C(D), the classical endurance parameter.

Gall, P. D.↗
DOE OSTI2023

Power packet networks for wave energy converter arrays

One of the biggest challenges for all renewable energy sources (RES) is that they are variable power generators which will require reactive power or energy storage systems (ESS) to provide reliable power quality (ideally power factor of one) at the power grid generation side. The present invention is directed to a power packet network (PPN) for integrating wave energy converter (WEC) arrays into microgrids. Specifically, an array of WECs can be physically positioned such that the incoming regular waves will produce an output emulating an N-phase AC system such that the PPN output power is constant. ESS requirements are thereby minimized whilst maintaining grid stability with high power quality. This will enable RES integration onto a future smart grid for large-scale adoption and cost reduction while preserving high efficiency, reliability, and resiliency.

Wilson, David G.↗
NASA NTRS1992

Finite grid radius and thickness effects on retarding potential analyzer measured suprathermal electron density and temperature

The effect of finite grid radius and thickness on the electron current measured by planar retarding potential analyzers (RPAs) is analyzed numerically. Depending on the plasma environment, the current is significantly reduced below that which is calculated using a theoretical equation derived for an idealized RPA having grids with infinite radius and vanishingly small thickness. A correction factor to the idealized theoretical equation is derived for the Pioneer Venus (PV) orbiter RPA (ORPA) for electron gasses consisting of one or more components obeying Maxwell statistics. The error in density and temperature of Maxwellian electron distributions previously derived from ORPA data using the theoretical expression for the idealized ORPA is evaluated by comparing the densities and temperatures derived from a sample of PV ORPA data using the theoretical expression with and without the correction factor.

Knudsen, William C.↗