Search NASA⌕ Search

SEARCH · Search NASA

Results for “Impurity levels”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

The effects of surface pretreatment and nitrogen tetroxide purification on the corrosion rate of Type 304L stainless steel

Corrosion rates of 304L stainless steel coupons in MON-1 oxidizer have been measured as a function of cleaning procedures employed, surface layer positions, propellant impurity levels, and short-term exposure durations (14 to 90 days). Of special interest was propellant contamination by buildup of soluble iron, which may cause flow decay. Surface treatments employed were combinations of cleaning, pickling, and passivation procedures. Propellants used were MIL-SPEC MON-1 and several types of purified NTO (i.e., low water, low chloride) which may, at a later time, be specified as spacecraft grade. Pretest coupon surface analysis by X-ray photoelectron spectroscopy (XPS-ESCA) has revealed important differences, for the different cleaning procedures, in the make-up of the surface layer, both in composition and state of chemical combination of the elements involved. Comparisons will be made of XPS/ESCA data, for different cleaning procedures, for specimens before and after propellant exposure.

Blue, G. D.↗
NASA NTRS1986

Solar silicon from directional solidification of MG silicon produced via the silicon carbide route

A process of metallurgical grade (MG) silicon production is presented which appears particularly suitable for photovoltaic (PV) applications. The MG silicon is prepared in a 240 KVA, three electrode submerged arc furnace, starting from high grade quartz and high purity silicon carbide. The silicon smelted from the arc furnace was shown to be sufficiently pure to be directionally solidified to 10 to 15 kg. After grinding and acid leaching, had a material yield larger than 90%. With a MG silicon feedstock containing 3 ppmw B, 290 ppmw Fe, 190 ppmw Ti, and 170 ppmw Al, blended with 50% of off grade electronic grade (EG) silicon to reconduct the boron content to a concentration acceptable for solar cell fabrication, the 99% of deep level impurities were concentrated in the last 5% of the ingot. Quite remarkably this material has OCV values higher tham 540 mV and no appreciable shorts due to SiC particles.

Rustioni, M.↗
NASA NTRS1986

Characterization of solar-grade silicon produced by the SiF4-Na process

A process was developed for producing low cost solar grade silicon by the reaction between SiF4 gas and sodium metal. The results of the characterization of the silicon are presented. These results include impurity levels, electronic properties of the silicon after crystal growth, and the performance of solar photovoltaic cells fabricated from wafers of the single crystals. The efficiency of the solar cells fabricated from semiconductor silicon and SiF4-Na silicon was the same.

Sanjurjo, A.↗
NASA NTRS1988

Amorphous silicon carbide coatings for extreme ultraviolet optics

Amorphous silicon carbide films formed by sputtering techniques are shown to have high reflectance in the extreme ultraviolet spectral region. X-ray scattering verifies that the atomic arrangements in these films are amorphous, while Auger electron spectroscopy and Rutherford backscattering spectroscopy show that the films have composition close to stoichiometric SiC, although slightly C-rich, with low impurity levels. Reflectance vs incidence angle measurements from 24 to 1216 A were used to derive optical constants of this material, which are presented here. Additionally, the measured extreme ultraviolet efficiency of a diffraction grating overcoated with sputtered amorphous silicon carbide is presented, demonstrating the feasibility of using these films as coatings for EUV optics.

Kortright, J. B.↗
NASA NTRS1988

Infrared absorption study of neutron-transmutation-doped germanium

Using high-resolution far-infrared Fourier transform absorption spectroscopy and Hall effect measurements, the evolution of the shallow acceptor and donor impurity levels in germanium during and after the neutron transmutation doping process was studied. The results show unambiguously that the gallium acceptor level concentration equals the concentration of transmutated Ge-70 atoms during the whole process indicating that neither recoil during transmutation nor gallium-defect complex formation play significant roles. The arsenic donor levels appear at full concentration only after annealing for 1 h at 450 C. It is shown that this is due to donor-radiation-defect complex formation. Again, recoil does not play a significant role.

Park, I. S.↗
NASA NTRS1989

Extrinsic germanium Blocked Impurity Bank (BIB) detectors

Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

Krabach, Timothy N.↗
NASA NTRS1997

Solar Cells for Lunar Application

In this work a preliminary study of the vacuum evaporation of silicon extracted from the lunar regolith has been undertaken. An electron gun vacuum evaporation system has been adapted for this purpose. Following the calibration of the system using ultra high purity silicon deposited on Al coated glass substrates, thin films of lunar Si were evaporated on a variety of crystalline substrates as well as on glass and lightweight 1 mil (25 microns) Al foil. Extremely smooth and featureless films with essentially semiconducting properties were obtained. Optical absorption analysis sets the bandgap (about 1.1 eV) and the refractive index (n=3.5) of the deposited thin films close to that of crystalline silicon. Secondary ion mass spectroscopy and energy dispersive spectroscopy analysis indicated that these films are essentially comparable to high purity silicon and that the evaporation process resulted in a substantial reduction of impurity levels. All layers exhibited a p-type conductivity suggesting the presence of a p-type dopant in the fabricated layers. While the purity of the 'lunar waste material' is below that of the 'microelectronic-grade silicon', the vacuum evaporated material properties seems to be adequate for the fabrication of average performance Si-based devices such as thin film solar cells. Taking into account solar cell thickness requirements (greater than 10 microns) and the small quantities of lunar material available for this study, solar cell fabrication was not possible. However, the high quality of the optical and electronic properties of evaporated thin films was found to be similar to those obtained using ultra-high purity silicon suggest that thin film solar cell production on the lunar surface with in situ resource utilization may be a viable approach for electric power generation on the moon.

Freundlich, Alex↗
NASA NTRS1998

Toward Optimum Scale and TBC Adhesion on Single Crystal Superalloys

Single crystal superalloys exhibit excellent cyclic oxidation resistance if their sulfur content is reduced from typical impurity levels of approximately 5 ppmw to below 0.5 ppmw. Excellent alumina scale adhesion was documented for PWA 1480 and PWA 1484 without yttrium additions. Hydrogen annealing produced effective desulfurization of PWA 1480 to less than 0.2 ppmw and was also used to achieve controlled intermediate levels. The direct relationship between cyclic oxidation behavior and sulfur content was shown. An adhesion criterion was proposed based on the total amount of sulfur available for interfacial segregation, e.g., less than or equal to 0.2 ppmw S will maximize adhesion for a 1 mm thick sample. PWA 1484, melt desulfurized to 0.3 ppmw S, also exhibited excellent cyclic oxidation resistance and encouraging TBC lives (10 mils of 8YSZ, plasma sprayed without a bond coat) in 1100 C cyclic oxidation tests.

Smialek, James L.↗
NASA NTRS1999

Characterization of ZnSe Single Crystals Grown by Physical Vapor Transport

ZnSe bulk crystals were grown by self-seeded physical vapor transport technique in horizontal and vertical configurations. The impurities and defects in the grown crystals were studied by glow discharge mass spectroscopy (GDMS) and low temperature photoluminescence (PL) measurements. The PL results on the starting material and the grown crystals are consistent with the low impurity levels measured by GDMS. The crystalline quality of the grown crystals were examined by synchrotron white beam X-ray topography (SWBXT) and high resolution triple X-ray diffraction (HRTXD). The SWBXT shows that, aside from twins, the overall crystalline quality of the vapor grown ZnSe crystals, especially in the contactless grown region, was quite high. The HRTXD results are in line with the SWBXT findings. The comparison between the HRTXD on a chemical-mechanically polished and a cleaved surface seems to indicate that polishing damage can obscure the true microstructure in the as-grown ZnSe crystals.

Su, Ching-Hua↗
NASA NTRS1998

Efficient 3D 'Atomistic' Simulation Technique for Studying of Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Decanano MOSFETs

A 3D 'atomistic' simulation technique to study random dopant induced threshold voltage lowering and fluctuations in sub 0.1 micron MOSFETs is presented. It allows statistical analysis of random impurity effects down to the individual impurity level. Efficient algorithms based on a single solution of Poisson's equation, followed by the solution of a simplified current continuity equation are used in the simulations.

Asenov, Asen↗
NASA NTRS2001

Photoluminescence Studies of ZnSe Starting Materials and Vapor Grown Bulk Crystals

Low-temperature photoluminescence (PL) spectra were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during PVT process. The impurity levels in one set of starting material/grown crystal were also measured by glow discharge mass spectroscopy (GDMS). The purification effect of pre-growth heat treatments and the PVT process is evidenced from the GDMS results which showed orders of magnitude reduction in the Li and Na concentration and a factor of 3 reduction in the O content after growth. The PL spectra showed that the strong emissions associated with Li (or Na) in one of the starting materials disappeared after growth. The GDMS results also showed increases in the At and Si contents by orders of magnitude after growth. To evaluate the contamination of the crystal during the high temperature growth process, three growth runs were processed using similar growth parameters but different furnace environments. The PL spectra suggest that the At contamination originated from the fused silica ampoule and that the Inconel cartridge might have been the cause of the broad Cu green and Cu red bands observed in one of the grown crystals.

Su, Ching-Hua↗
NASA NTRS2001

Macromolecular Crystal Quality

There are many ways of judging a good crystal. Which we use depends on the qualities we seek. For gemstones size, clarity and impurity levels (color) are paramount. For the semiconductor industry purity is probably the most important quality. For the structural crystallographer the primary desideratum is the somewhat more subtle concept of internal order. In this chapter we discuss the effect of internal order (or the lack of it) on the crystal's diffraction properties.

Snell, Edward H.↗
NASA NTRS2003

Reduction of Defects in Germanium-Silicon

Crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float-zone processing, detached- Bridgman growth is a promising tool to improve crystal quality, without the limitations of float zoning or the defects introduced by normal Bridgman growth. Goals of this project include the development of the detached Bridgman process to be reproducible and well understood and to quantitatively compare the defect and impurity levels in crystals grown by these three methods. Germanium (Ge) and germanium-silicon (Ge-Si) alloys are being used. At MSFC, we are responsible for the detached Bridgman experiments intended to differentiate among proposed mechanisms of detachment, and to confirm or refine our understanding of detachment. Because the contact angle is critical to determining the conditions for detachment, the sessile drop method was used to measure the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. Etch pit density (EPD) measurements of normal and detached Bridgman-grown Ge samples show a two order of magnitude improvement in the detached-grown samples. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. We have investigated the effects on detachment of ampoule material, pressure difference above and below the melt, and Si concentration; samples that are nearly completely detached can be grown repeatedly in pBN. Current work is concentrated on developing a method to make in situ pressure measurements in the growth ampoules.

Source record↗
NASA NTRS2013

Closeout Report for the Refractory Metal Accelerated Heat Pipe Life Test Activity

With the selection of a gas-cooled reactor, this heat pipe accelerated life test activity was closed out and its resources redirected. The scope of this project was to establish the long-term aging effects on Mo-44.5%Re sodium heat pipes when subjected to space reactor temperature and mass fluences. To date, investigators have demonstrated heat pipe life tests of alkali metal systems up to .50,000 hours. Unfortunately, resources have not been available to examine the effect of temperature, mass fluence, or impurity level on corrosion or to conduct post-test forensic examination of heat pipes. The key objective of this effort was to establish a cost/time effective method to systematically test alkali metal heat pipes with both practical and theoretical benefits. During execution of the project, a heat pipe design was established, a majority of the laboratory test equipment systems specified, and operating and test procedures developed. Procurements for the heat pipe units and all major test components were underway at the time the stop work order was issued. An extremely important outcome was the successful fabrication of an annular wick from Mo-5%Re screen (the single, most difficult component to manufacture) using a hot isostatic pressing technique. This Technical Publication (TP) includes specifics regarding the heat pipe calorimeter water-cooling system, vendor design for the radio frequency heating system, possible alternative calorimeter designs, and progress on the vanadium equilibration technique. The methods provided in this TP and preceding project documentation would serve as a good starting point to rapidly implement an accelerated life test. Relevant test data can become available within months, not years, and destructive examination of the first life test heat pipe might begin within 6 months of test initiation. Final conclusions could be drawn in less than a quarter of the mission duration for a long-lived, fission-powered, deep space probe.

Martin, J.↗
NASA NTRS1979

Analysis of the Effects of Impurities in Silicon

A solar cell fabrication and analysis program to determine the effects on the resultant solar cell efficiency of impurities incorporated into silicon is conducted. Flight quality technologies and quality assurance are employed to assure that variations in cell performance are due to the impurities incorporated in the silicon. The type and level of impurity doping in each test lot is given and the mechanism responsible for the degradation of cell performance is identified and correlated to the doped impurities.

Wohlgemuth, J. H.↗
NASA NTRS1983

Present state of boron-carbon thermoelectric materials

Boron-carbon p-type thermoelectric materials show promise for use in advanced thermal-to-electric space power conversion systems. Here, recent data on the thermoelectric properties of boron-carbon materials, such as B9C, B13C2, B15C2, and B4C, are reviewed. In particular, attention is given to the effect of the compositional homogeneity and residual impurity content on the Seeback coefficient, electrical resistivity, and thermal conductivity of these materials. The effect of carbon content for a given level of impurity and degree of homogeneity is also discussed.

Elsner, N. B.↗
NASA NTRS1985

Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defect

A dominant hole trap has been identified in p-type bulk GaAs employing deep level transient and photocapacitance spectroscopies. The trap is present at a concentration up to about 4 x 10 to the 16th per cu cm, and it has two charge states with energies 0.54 + or - 0.02 and 0.77 + or - 0.02 eV above the top of the valence band (at 77 K). From the upper level the trap can be photoexcited to a persistent metastable state just as the dominant midgap level, EL2. Impurity analysis and the photoionization characteristics rule out association of the trap with impurities Fe, Cu, or Mn. Taking into consideration theoretical results, it appears most likely that the two charge states of the trap are the single and double donor levels of the arsenic antisite As(Ga) defect.

Lagowski, J.↗