Search NASA⌕ Search

SEARCH · Search NASA

Results for “Ionizing Dose”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3

Total Ionizing Dose Test of Microsemi's Silicon Switching Transistors JANTXV2N2222AUB and 2N2907AUB

Microsemi's silicon switching transistors, JANTXV2N2222AUB and 2N2907AUB, were tested for total ionizing dose (TID) response beginning on July 11, 2016. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

total ionizing dose (TID)↗

Room Temperature Total-Ionizing Dose Testing of Glenn Research Center (GRC) 500 °C Durable 4H-SiC JFET IC Technology

The purpose of this testing was to obtain total ionizing dose (TID) information about custom-built research prototype silicon carbide (SiC) junction field effect transistor (JFET) integrated circuits (ICs) capable of prolonged operation in extremely high-temperature (500 degrees Centigrade) environments. The circuits included ring oscillators and operational amplifiers as well as individual n-channel JFETs. This technology is being considered for use in high temperature, high pressure applications such as Long-Lives Surface System Explorer (LLISSE). These devices were developed at NASA Glenn Research Center (GRC). Testing occurred from July 9th-July 13th, 2018.

Radiation↗

Epidemiological Studies of Low-Dose Ionizing Radiation and Cancer: Rationale and Framework for the Monograph and Overview of Eligible Studies

Abstract Whether low-dose ionizing radiation can cause cancer is a critical and long-debated question in radiation protection. Since the Biological Effects of Ionizing Radiation report by the National Academies in 2006, new publications from large, well-powered epidemiological studies of low doses have reported positive dose-response relationships. It has been suggested, however, that biases could explain these findings. We conducted a systematic review of epidemiological studies with mean doses less than 100 mGy published 2006–2017. We required individualized doses and dose-response estimates with confidence intervals. We identified 26 eligible studies (eight environmental, four medical, and 14 occupational), including 91 000 solid cancers and 13 000 leukemias. Mean doses ranged from 0.1 to 82 mGy. The excess relative risk at 100 mGy was positive for 16 of 22 solid cancer studies and 17 of 20 leukemia studies. The aim of this monograph was to systematically review the potential biases in these studies (including dose uncertainty, confounding, and outcome misclassification) and to assess whether the subset of minimally biased studies provides evidence for cancer risks from low-dose radiation. Here, we describe the framework for the systematic bias review and provide an overview of the eligible studies.

Berrington de Gonzalez, Amy↗

UV–Visible reflectance of common light reflectors and their degradation after an ionization dose up to 100 Mrad

We report light reflectors are widely used to enhance scintillation light collection. Their enhancement level depends on the reflector’s reflectance at the scintillator’s emission wavelength. We report UV–Visible reflectance spectra, relative to BaSO 4 , for several common reflectors. Also reported is their radiation hardness against an ionization dose up to 100 Mrad. The results of this investigation provide a reference for applications of these reflectors in a severe radiation environment.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Total Ionizing Dose Test of Silicon Switching Transistors JANTXV2N2222AUB

Semicoa's silicon switching transistors, JANTXV2N2222AUB was tested for total ionizing dose (TID) response beginning on November 4, 2019. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

Campola, M.↗

Total Ionizing Dose Test of Analog Devices’ AD654 Voltage to Frequency Converter

Analog Devices’ AD654 was tested for total ionizing dose (TID) response beginning on February 13, 2017. This device has the Radiation Effects and Analysis Group Identification (REAG ID) number 16-036. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

B. Freeman↗

New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory

This paper describes a new non-charge-based data storing technique in NAND flash memory called watermark that encodes read-only data in the form of physical properties of flash memory cells. Unlike traditional charge-based data storing method in flash memory, the proposed technique is resistant to total ionizing dose (TID) effects. To evaluate its resistance to irradiation effects, we analyze data stored in several commercial single-level-cell (SLC) flash memory chips from different vendors and technology nodes. These chips are irradiated using a Co-60 gamma-ray source array for up to 100 krad(Si) at Sandia National Laboratories. Experimental evaluation performed on a flash chip from Samsung shows that the intrinsic bit error rate (BER) of watermark increases from 0.8% for TID = 0 krad(Si) to 1% for TID = 100 krad(Si). Conversely, the BER of charge-based data stored on the same chip increases from 0% at TID = 0 krad(Si) to 1.5% at TID = 100 krad(Si). Overall, the results imply that the proposed technique may potentially offer significant improvements in data integrity relative to traditional charge-based data storage for very high radiation (TID > 100 krad(Si)) environments. These gains in data integrity relative to the charge-based data storage are useful in radiation-prone environments, but they come at the cost of increased write times and higher BERs before irradiation.

36 MATERIALS SCIENCE↗

Compendium of Single Event Transient (SET) and Total Ionizing Dose (TID) Test Results for Commonly Used Voltage Comparators

This data compendium reports single event transient (SET) and total ionizing dose (TID) test results for commonly used commercial-off-the-shelf (COTS) and radiation hardened voltage comparators targeted for possible use in space-based missions. Interesting trends in the variability of the radiation performance of these devices due to differences in lot date codes, manufacturers, circuit design, and test conditions are analyzed herein.

Bozovich, Amanda↗

C30665L CD3740 Displacement Damage and Total Ionizing Dose Test Report

The purpose of this testing is to provide preliminary characterization of the displacement damage and total ionizing dose effects via 63 MeV protons on InGaAs PIN photodiodes fabricated and assembled by Excelitas for use in a LIDAR system. The testing is being conducted to determine the susceptibility of the component to the radiation environment that it will be exposed to during mission duration.

Landen D Ryder↗

Total Ionizing Dose Testing of the Analog Devices’ AD648 Dual Precision Operational Amplifier

The Analog Devices (ADI) AD648 was tested for total ionizing dose response at the Goddard Space Flight Center (GSFC) Radiation Effects Facility (REF) beginning 1 June 2011. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

Alvin J Boutte↗

Total Ionizing Dose Test Report Microchip JANTXV2N6284 NPN Darlington Power Si Transistor

This study was undertaken to determine the effects of total ionizing dose (TID) on the JANTXV2N6284 NPN Darlington power bipolar junction transistor (BJT). The device was parametrically characterized prior to, at each incremental dose step, and after irradiation. Testing was at a low-dose rate using the NASA GSFC Radiation Effects Facility (REF).

Kaitlyn L Ryder↗