Research study of structural damage produced in silicon semiconductors by neutron irradiation Final report, Jun. 1969 - Jul. 1970
Characteristics of damage produced in silicon semiconductors by neutron irradiation
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Characteristics of damage produced in silicon semiconductors by neutron irradiation
Electron and proton damage coefficients have been measured for several types of silicon cells of recent manufacture using 1 MeV electrons and protons with energies of 8.3, 17.5 and 40 MeV. LPE (AlGa)As-GaAs cells were also irradiated and pseudodamage coefficients derived under the assumption that the irradiation changes the diffusion length in only one of the n- or p-type layers. After irradiation the cells were annealed isochronally up to 450 C. The damage coefficient and annealing data for silicon cells are in substantial agreement with previous work. The GaAs cells have pseudo-damage coefficients which are dependent on fluence, and have about the same energy dependence as Si damage coefficients.
The RBE of protons has been assumed to be equivalent to that of photons. The objective of this study was to determine whether radiation-induced DNA and chromosome damage, apoptosis, cell killing and cell cycling in organized epithelial cells was influenced by radiation quality. Thyroid-stimulating hormone-dependent Fischer rat thyroid cells, established as follicles, were exposed to gamma rays or proton beams delivered acutely over a range of physical doses. Gamma-irradiated cells were able to repair DNA damage relatively rapidly so that by 1 h postirradiation they had approximately 20% fewer exposed 3' ends than their counterparts that had been irradiated with proton beams. The persistence of free ends of DNA in the samples irradiated with the proton beam implies that either more initial breaks or a quantitatively different type of damage had occurred. These results were further supported by an increased frequency of chromosomal damage as measured by the presence of micronuclei. Proton-beam irradiation induced micronuclei at a rate of 2.4% per gray, which at 12 Gy translated to 40% more micronuclei than in comparable gamma-irradiated cultures. The higher rate of micronucleus formation and the presence of larger micronuclei in proton-irradiated cells was further evidence that a qualitatively more severe class of damage had been induced than was induced by gamma rays. Differences in the type of damage produced were detected in the apoptosis assay, wherein a significant lag in the induction of apoptosis occurred after gamma irradiation that did not occur with protons. The more immediate expression of apoptotic cells in the cultures irradiated with the proton beam suggests that the damage inflicted was more severe. Alternatively, the cell cycle checkpoint mechanisms required for recovery from such damage might not have been invoked. Differences based on radiation quality were also evident in the alpha components of cell survival curves (0.05 Gy(-1) for gamma rays, 0.12 Gy(-1) for protons), which suggests that the higher level of survival of gamma-irradiated cells could be attributed to the persistence of nonlethally irradiated thyrocytes and/or the capacity to repair damage more effectively than cells exposed to equal physical doses of protons. The final assessment in this study was radiation-induced cell cycle phase redistribution. Gamma rays and protons produced a similar dose-dependent redistribution toward a predominantly G(2)-phase population. From our cumulative results, it seems likely that a majority of the proton-irradiated cells would not continue to divide. In conclusion, these findings suggest that there are quantitative and qualitative differences in the biological effects of proton beams and gamma rays. These differences could be due to structured energy deposition from the tracks of primary protons and the associated high-LET secondary particles produced in the targets. The results suggest that a simple dose-equivalent approach to dosimetry may be inadequate to compare the biological responses of cells to photons and protons.
The results of research concerning the effects of nuclear and space radiation are presented. Topics discussed include the basic mechanisms of nuclear and space radiation effects, radiation effects in devices, and radiation effects in microcircuits, including studies of radiation-induced paramagnetic defects in MOS structures, silicon solar cell damage from electrical overstress, radiation-induced charge dynamics in dielectrics, and the enhanced radiation effects on submicron narrow-channel NMOS. Also examined are topics in SGEMP/IEMP phenomena, hardness assurance and testing, energy deposition, desometry, and radiation transport, and single event phenomena. Among others, studies are presented concerning the limits to hardening electronic boxes to IEMP coupling, transient radiation screening of silicon devices using backside laser irradiation, the damage equivalence of electrons, protons, and gamma rays in MOS devices, and the single event upset sensitivity of low power Schottky devices.
Radiation can cause as well as cure cancer. The risk of developing radiation-induced cancer has traditionally been estimated from cancer incidence among survivors of the atomic bombs in Hiroshima and Nagasaki. These data provide the best estimate of human cancer risk over the dose range for low linear energy transfer (LET) radiations, such as X- or gamma-rays. The situation of estimating the real biological effects becomes even more difficult in the case of high LET particles encountered in space or as the result of domestic exposure to particles from radon gas emitters or other radioactive emitters like uranium-238. Complex DNA damage, i.e., the signature of high-LET radiations comprises by closely spaced DNA lesions forming a cluster of DNA damage. The two basic groups of complex DNA damage are double strand breaks (DSBs) and non-DSB oxidative clustered DNA lesions (OCDL). Theoretical analysis and experimental evidence suggest there is increased complexity and severity of complex DNA damage with increasing LET (linear energy transfer) and a high mutagenic or carcinogenic potential. Data available on the formation of clustered DNA damage (DSBs and OCDL) by high-LET radiations are often controversial suggesting a variable response to dose and type of radiation. The chemical nature and cellular repair mechanisms of complex DNA damage have been much less characterized than those of isolated DNA lesions like an oxidized base or a single strand break especially in the case of high-LET radiation. This review will focus on the induction of clustered DNA damage by high-LET radiations presenting the earlier and recent relative data.
Damage to silicon and gallium arsenide solar cells from low energy proton irradiations
Rhesus monkeys liver damage after irradiation by penetrating protons
Literature review on proton damage of irradiated silicon solar cells
Si solar cells under low temperature electron irradiation, noting damage rate dependence on measurement temperature
Effects of high energy protons on erythropoietic stem cells and radioprotection by chemicals were investigated in NASA Space Radiation Effects Laboratory. The effects of a parallel beam of 600 MeV protons. The fluence, when converted to dose, were referenced to the synchrocyclotron beam monitors which were then used to administer radiation exposures. Mice were given graded doses to 300 rads to determine dose-response curve. Other mice received saline, AET, or 5-hydroxytryptamine 10 to 15 minutes before exposure.
Study regions of lattice disorder produced in lithium-doped float-zone melted n/p-type silicon solar cells by irradiation with monoenergetic neutrons at doses between 10 to the 10th and 10 to the 13th per cu cm. The defect regions were revealed by chemically etching the surface of the solar cells and by observing carbon replicas in an electron microscope. It was found that the defect density increased with increasing irradiation dose and increased lithium content, whereas the average defect diameter was found to decrease. From thermal annealing experiments it was found that in the lithium-doped material the defect structure was stable at temperatures between 300 and 1200 K. This was found to be in contrast to the undoped material where at the lowest doses considerable annealing was observed to occur. These results are discussed in terms of the theoretical predictions and models of defect clusters proposed by Gossick (1959) and Crawford and Cleland (1959).
The availability of data regarding the radiation behavior of GaAs and silicon solar cells is discussed as well as efforts to provide sufficient information. Other materials are considered too immature for reasonable radiation evaluation. The lack of concern over the possible catastrophic radiation degradation in cascade cells is a potentially serious problem. Lithium counterdoping shows potential for removing damage in irradiated P-type material, although initial efficiencies are not comparable to current state of the art. The possibility of refining the lithium doping method to maintain high initial efficiencies and combining it with radiation tolerant structures such as thin BSF cells or vertical junction cells could provide a substantial improvement in EOL efficiencies. Laser annealing of junctions, either those formed ion implantation or diffusion, may not only improve initial cell performance but might also reduce the radiation degradation rate.
Crew members face potential consequences following exposure to the space radiation environment including acute radiation syndrome and cancer. The space radiation environment is ample with protons, and numerous studies have been devoted to the understanding of the health consequences of proton exposures. In this project, C57BL/6 mice underwent whole-body exposure to 250 MeV of protons at doses of 0, 0.1, 0.5, 2 and 6 Gy and the gastrointestinal (GI) tract of each animal was dissected four hours post-irradiation. Standard H&E staining methods to screen for morphologic changes in the tissue showed an increase in apoptotic lesions for even the lowest dose of 0.1 Gy, and the percentage of apoptotic cells increased with increasing dose. Results of gene expression changes showed consistent up- or down- regulation, up to 10 fold, of a number of genes across exposure doses that may play a role in proton-induced oxidative stress including Gpx2. A separate study in C57BL/6 mice using the same four hour time point but whole-body gamma-irradiation showed damage to the small intestine with lesions appearing at the smallest dose of 0.05 Gy and increasing with increasing absorbed dose. Expressions of genes associated with oxidative stress processes were analyzed at four hours and twenty-four hours after exposure to gamma rays. We saw a much greater number of genes with significant up- or down-regulation twenty-four hours post-exposure as compared to the four hour time point. At both four hours and twenty-four hours post-exposure, Duox1 and Mpo underwent up-regulation for the highest dose of 6 Gy. Both protons and gamma rays lead to significant variation in gene expressions and these changes may provide insight into the mechanism of injury seen in the GI tract following radiation exposure. We have also completed experiments using a BALB/c mouse model undergoing whole-body exposure to protons. Doses of 0, 0.1, 1 and 2 Gy were used and results will be compared to the work mentioned above. The most striking result preliminarily is that both strains of mice show a greater number of genes changing at the lowest dose of exposure for their respective pathways.
Alpha particles radiation damage effects in silicon surface barrier detector
The Japan Meteorological Agency started the spectral observation of solar ultraviolet (UV) irradiance on 1 January 1990 at Tateno, Aerological Observatory in Tsukuba (35 deg N, 140 deg E). The observation has been carried out using the Brewer spectrophotometer for the wavelengths from 290 to 325 nm with a 0.5 nm interval every hour from 30 minutes before sunrise to 30 minutes after sunset throughout a year. Because of remarkable similarity within observed spectra, an observed spectrum can be expressed by a simple combination of a reference spectrum and two parameters expressing the deformation of the observed spectrum from the reference. By use of the relation between one of the deformation parameters and the total ozone simultaneously observed with the Dobson spectrophotometer, the possible increase of UV irradiance due to ozone depletion is estimated. For damaging UV, the irradiance possibly increases about 19 percent with the ozone depletion of 10 percent at noon throughout the year in the northern midlatitudes. DUV at noon on the summer solstice possibly increases about 5.6 percent with the ozone depletion of 10 m atm-cm for all latitudes in the Northern Hemisphere.
We report on the measurement of the diffusion length damage coefficient (K(sub L)) and the annealing characteristics of the minority carrier diffusion length (L(sub n)) in Czochralski-grown zinc-doped indium phosphide (InP), with a carrier concentration of 1 x 10(exp l8) cm(exp -3). In measuring K(sub L) irradiations were made with 0.5 MeV protons with fluences ranging from 1 x 10(exp 11) to 3 x 10(exp 13) cm(exp -2). Pre- and post-irradiation electron-beam induced current (EBIC) measurements allowed for the extraction of L(sub n) from which K(sub L) was determined. In studying the annealing characteristics of L(sub n) irradiations were made with 2 MeV protons with fluence of 5 x 10(exp 13) cm(exp -2). Post-irradiation studies of L(sub n) with time at room temperature, and with minority carrier photoinjection and forward-bias injection were carried out. The results showed that recovery under Air Mass Zero (AMO) photoinjection was complete. L(sub n) was also found to recover under forward-bias injection, where recovery was found to depend on the value of the injection current. However, no recovery of L(sub n) after proton irradiation was observed with time at room temperature, in contrast to the behavior of 1 MeV electron-irradiated InP solar cells reported previously.
Proton irradiation of solar cells
Systematic improvements in fabrication yield were obtained by appropriate control of the liquid phase epitaxial growth process, contact fabrication and surface preparation. To improve radiation hardness, the junction depth was decreased while overcoming the penalty in decreased solar cell efficiency which tends to go hand-in-hand with the reduction of junction depth in (AlGa) As-GaAs solar cells. Cells were made with an AMO efficiency of 18% and a junction depth of 0.5 micrometers, as compared to junction depths on the order of 1.0 micrometers. With respect to the damage caused by proton irradiation, the nature of the observed damage was correlated to the energy and penetration depth of the damaging protons.